28
MODAL INTERACTIONS IN MUSHROOM- TYPE METAMATERIALS WITH THIN METAL/GRAPHENE P ATCHES A. B. Yakovlev and G. W. Hanson SESSION: CARBON AND QUANTUM METAMATERIALS 2 THURSDAY , OCTOBER 13, 2011 Metamaterials 2011: The Fifth International Congress on Advanced Electromagnetic Materials in Microwaves and Optics Barcelona, SPAIN October 10-15, 2011

M INTERACTIONS IN MUSHROOM T METAMATERIALS WITH …yakovlev/...MODAL INTERACTIONS IN MUSHROOM- TYPE METAMATERIALS WITH THIN METAL/GRAPHENE PATCHES A. B. Yakovlev and G. W. Hanson SESSION:

  • Upload
    others

  • View
    3

  • Download
    0

Embed Size (px)

Citation preview

  • MODAL INTERACTIONS IN MUSHROOM-

    TYPE METAMATERIALS WITH THIN

    METAL/GRAPHENE PATCHES

    A. B. Yakovlev and G. W. Hanson

    SESSION: CARBON AND QUANTUM METAMATERIALS 2

    THURSDAY, OCTOBER 13, 2011

    Metamaterials 2011: The Fifth International Congress on

    Advanced Electromagnetic Materials

    in Microwaves and Optics

    Barcelona, SPAIN

    October 10-15, 2011

  • 2

    Introduction

    Nonlocal Homogenization Model for Mushroom

    Surfaces with Thin Metal/Graphene Patches Generalized Additional Boundary Condition

    Natural Waves in the Transition of Mushroom Surface

    to Wire-Medium Slab Modal Interaction Phenomena

    Complex Frequency-Plane Branch Points

    Conclusion

    Outline

  • x

    z

    a

    a

    g

    2r0

    Ground plane (PEC) z

    a k

    r

    g

    L

    Lk

    La

    r0

    1

    y

    E

    H

    y = 0

    3

    0)(

    0

    Ly

    ydy

    ydI

    000

    Ly

    y

    xz

    y

    rdy

    dHk

    dy

    dE

    In terms of “macroscopic” field components:

    y = L

    In mushroom-type HIS structures with short vias, the presence of patches significantly

    reduces the spatial dispersion in the wire-medium slab resulting in the uniform current

    along the vias

    Introduction – Mushroom-Type HIS

    Additional boundary condition for the “microscopic” current at the via-ground plane

    connection ( ) and via-patch connection ( ): Ly 0y

    A. Demetriadou et.al., J. Phys.: Condens. Matter, 20, 295222, 2008

    O. Luukkonen et.al., IEEE Trans. Microwave Theory Tech., 57, Nov. 2009

    A. B. Yakovlev et.al., IEEE Trans. Microwave Theory Tech., 57, Nov. 2009

    M. Silveirinha et al., New J. Phys., 10, 2008

  • A. B. Yakovlev et.al., IEEE Trans. Microwave Theory Tech., 57, Nov. 2009

    The results of natural modes [surface waves and leaky waves] based on non-local

    (SD+ABC) and local (ENG) homogenization models are in excellent agreement

    Nonlocal and Local Homogenization Models PEC patches

    TMz Period: 2 mm

    Gap: 0.2 mm

    Radius of vias: 0.05 mm

    Slab thickness: 1 mm

    Dielectric permittivity: 10.2

    4

    SD+ABC ENG

  • 5

    8 9 10 11 12 13 14 15 16 17 18-30

    -25

    -20

    -15

    -10

    -5

    0

    Frequency (GHz)

    |R|, d

    B

    ABC - PEC

    HFSS

    PEC

    x

    z

    a

    a

    g

    2r0

    L y

    z

    x

    Metal patches

    Metal Thickness: 1nm

    y

    E

    H

    k

    Mushroom HIS – Thin Metal Patch

    A. B. Yakovlev et.al., IEEE Trans. Microwave Theory Tech., 59, Mar. 2011

    7

    3 5.8 10 (S/m)D

    TM polarization: 30˚

  • 6

    Generalized Additional Boundary Condition (GABC)

    Thin Metal/Graphene Patch

    z

    y

    y

    E

    H

    PEC

    rL

    t

    cJ

    Leontovitch Boundary Condition:

    c

    metalr

    t JE

    ,

    0

    Good conductor

    c

    D

    t JE

    2

    1

    Thin metal tDD 32

    1ln2

    Γ22

    2intra

    2

    Tk

    B

    cBD

    BceTkj

    Tkej

    Surface Conductivity of Graphene

    0

    3, 1

    Dmetalr j

    G. W. Hanson, J. Appl. Phys., 103, 2008

    -e: charge of an electron

    kB: Boltzmann’s constant

    μc: chemical potential (electrostatic bias)

    Γ : electron scattering rate (1012 Hz)

    T : temperature (300 K)

    ћ : modified Planck’s constant

    S. A. Tretyakov, Analytical Modeling in Applied Electromagnetics,

    Artech House: Norwood, MA, 2003

  • 7

    j

    Jcss

    Principle of Conservation of Surface Charge

    0)()(

    0

    2

    Lyc

    c

    r

    D yJdy

    ydJ

    j

    Generalized Additional Boundary Condition (GABC) at the via-thin

    metal/graphene connection, : Ly

    dy

    ydJ

    jc

    s

    )(1

    Enrs

    ˆ0

    Surface charge density for thin metal/graphene

    at the connection point, : Ly

    c

    D

    rs J

    2

    0

    Thin wires

    z

    y

    y

    E

    H

    PEC

    rL

    t

    cJ

    Generalized Additional Boundary Condition (GABC)

    Thin Metal/Graphene Patch

    A. B. Yakovlev et.al., IEEE Trans. Microwave Theory Tech., 59, Mar. 2011

  • 2

    2 21

    p

    xx

    r xk

    /

    r r

    c

    8

    Nonlocal Model – SD + ABC

    • Wire medium slab as uniaxial continuous material characterized by

    tensor effective permittivity

    • Spatial dispersion

    0 ˆˆ ˆˆ ˆˆeff r xxxx yy zz 2

    2

    0

    2 /

    ln 0.52752

    p

    a

    a

    r

    is the plasma wavenumber p

    M. Silveirinha et al., IEEE Trans. Antennas Propagat., 56, Feb. 2008

    Mushroom Array with Thin Metal/Graphene Patches

    TMz

  • | | | |z z g y yx L x L x L x LE E Z H H

    9

    SD + ABC Model

    • Magnetic field of TMz natural modes:

    0

    cos cosh

    z

    z

    x jk z

    y

    jk z

    y TEM r TM TM

    H Ae e

    H B x B x e

    air region

    wire medium slab

    • Two-sided impedance boundary condition at :

    In terms of field components:

    In terms of field components:

    x L

    2

    0

    ( )( ) 0cD c x L

    r

    dJ xJ x

    j dx

    2 0 00

    0yxD

    r z r x z y x Lr

    dHdEk E k H

    j dx dx

    0

    ( )0c

    x

    dJ x

    dx

    0 00

    yxr z x

    dHdEk

    dx dx

    • Generalized additional boundary condition at the via-thin metal/graphene patch

    connection, : x L

    •Additional boundary condition at the via-ground plane connection, : 0x

  • a

    g

    g

    a

    z

    y

    22

    eff

    D

    g jga

    aZ

    a

    gakeff

    2cscln

    10

    S. A. Tretyakov, Analytical Modeling in Applied Electromagnetics, Artech House: Norwood, MA, 2003

    O. Luukkonen et al., IEEE Trans. Microwave Theory Tech., 57, Nov. 2009

    Grid Impedance of Thin Metal/Graphene Patches

    eff

    eff

    0 effeff kk 0

    2

    1 reff

    TMz

  • 00 0

    1( , ) coth cot 0z TM r

    g

    H k K L L jZ k

    2 2 2

    TM p z rk

    11

    • TMz natural modes

    2 2

    0 zk

    Dispersion Equation

    where

    2

    2 21

    pTM

    xx

    z pk

    In the limiting case (transparent patches) it turns to wire-medium slab:

    M. Silveirinha et al., IEEE Trans. Antennas Propagat., 56, Feb. 2008

    In the limiting case (PEC patches) it turns to mushroom HIS:

    2 2

    0 0

    2 2

    0 0

    11 tanh 1 1 tan

    11 coth cot

    D TM D rTM rTM

    xx r r

    r D TM TM D rTM rTM

    r xx r r r

    L Lj j

    K

    L Lj j

    02 D

    D2

    A. B. Yakovlev et.al., IEEE Trans. Microwave Theory Tech., 57, Nov. 2009

  • 12

    Mushroom Surface with Metallic Patches

    tDD 32

    7

    3 5.8 10 (S/m)D

    TMz

    Period: 2 mm

    Gap: 0.2 mm

    Radius of vias: 0.05 mm

    Slab thickness: 1 mm

    Dielectric permittivity: 10.2

    TMz natural modes

    0 3, 2 / Dt

  • 13

    Mushroom HIS – PEC Patches

    Transition from proper to improper complex leaky waves:

    from backward to forward radiation

    A. B. Yakovlev et.al., IEEE Trans. Microwave Theory Tech., 57, Nov. 2009

  • 14

    Transition of Mushroom HIS to WM Slab

    Phase constant

    solid lines: proper complex

    dashed lines: improper complex

    Wire-medium slab

    Leaky Waves

    16 18 20 22 24 26 28 30-2

    -1

    0

    1

    2

    3

    4

    5

    6

    Frequency (GHz)

    Re

    al(

    k z/k

    0)

    a = 1 mm

    a = 2 mm

    a = 3 mm

    A. B. Yakovlev et.al., IEEE Trans. Microwave Theory Tech., 57, Nov. 2009

    Physical leaky waves of the mushroom HIS structure in the transition to

    the wire-medium slab continue to physical leaky waves of wire-medium slab

    7

    3 5.8 10 (S/m)D tDD 32

    10 15 20 25 30-3

    -2

    -1

    0

    1

    2

    3

    Frequency (GHz)

    Re

    (kz/

    k0)

    2d

    = 0.0058 S

    2d

    = 5.810-4

    S

    2d

    = 0.0029 S

    2d

    = 5.810-6

    S

    2d = 0.058 S

    2d

    = 5.8 S

  • 15

    Transition of Mushroom HIS to WM Slab

    Attenuation constant

    solid lines: proper complex

    dashed lines: improper complex

    Wire-medium slab

    Leaky Waves

    A. B. Yakovlev et.al., IEEE Trans. Microwave Theory Tech., 57, Nov. 2009

    Physical leaky waves of the mushroom HIS structure in the transition to

    the wire-medium slab continue to physical leaky waves of wire-medium slab

    16 18 20 22 24 26 28 30-6

    -4

    -2

    0

    2

    4

    6

    Frequency (GHz)

    Ima

    g(k

    z/k

    0)

    a = 1 mm

    a = 2 mm

    a = 3 mm

    7

    3 5.8 10 (S/m)D tDD 32

    10 15 20 25 300

    1

    2

    3

    4

    5

    6

    Frequency (GHz)

    Im(k

    z/k

    0)

    2d

    = 0.058 S

    2d

    = 5.8 S

    2d

    = 0.0058 S

    2d

    = 0.0029 S

    2d

    = 5.810-4

    S

    2d

    = 5.810-6

    S

  • 16

    Mushroom HIS – Thin Metallic Patches

    Surface conductivity:

    Proper complex and improper complex solutions

    of mushroom HIS parameterized by metal thickness

    solid lines: proper complex

    dashed lines: improper complex

    8 10 12 14 16 18 200

    0.5

    1

    1.5

    2

    2.5

    3

    Frequency (GHz)

    Re

    (kz/

    k0)

    8 10 12 14 16 18 20-0.6

    -0.5

    -0.4

    -0.3

    -0.2

    -0.1

    0

    0.1

    0.2

    0.3

    Frequency (GHz)

    Im(k

    z/k

    0)

    2 5.8 SD

  • 17

    Mushroom HIS – Thin Metallic Patches

    Proper complex and improper complex solutions

    of mushroom HIS parameterized by metal thickness

    solid lines: proper complex

    dashed lines: improper complex

    8 10 12 14 16 18 200

    0.5

    1

    1.5

    2

    2.5

    3

    Frequency (GHz)

    Re

    (kz/

    k0)

    8 10 12 14 16 18 20-0.6

    -0.5

    -0.4

    -0.3

    -0.2

    -0.1

    0

    0.1

    0.2

    0.3

    Frequency (GHz)

    Im(k

    z/k

    0)

    Surface conductivity: 2 0.58 SD

  • 18

    Mushroom HIS – Thin Metallic Patches

    Phase constant

    solid lines: proper complex

    dashed lines: improper complex

    8 10 12 14 16 18 200

    0.5

    1

    1.5

    2

    2.5

    3

    Frequency (GHz)

    Re

    (kz/

    k0)

    8 10 12 14 16 18 200

    0.5

    1

    1.5

    2

    2.5

    3

    Frequency (GHz)

    Re

    (kz/

    k0)

    Surface conductivity: 2 0.116 SD Surface conductivity: 2 0.058 SD

  • 19

    Mushroom HIS – Thin Metallic Patches

    Attenuation constant

    solid lines: proper complex

    dashed lines: improper complex

    8 10 12 14 16 18 20-0.4

    -0.3

    -0.2

    -0.1

    0

    0.1

    0.2

    0.3

    0.4

    Frequency (GHz)

    Im(k

    z/k

    0)

    8 10 12 14 16 18 20-0.4

    -0.3

    -0.2

    -0.1

    0

    0.1

    0.2

    0.3

    0.4

    Frequency (GHz)

    Im(k

    z/k

    0)

    Surface conductivity: 2 0.116 SD Surface conductivity: 2 0.058 SD

  • 20

    Mushroom HIS – Modal Interaction (1)

    Modal Interchange

    solid lines: proper complex

    dashed lines: improper complex

    8 9 10 11 12 13 14 15 16 170

    0.2

    0.4

    0.6

    0.8

    1

    1.2

    1.4

    1.6

    1.8

    2

    Frequency (GHz)

    Re

    (kz/

    k0)

    Surface conductivity: 2 0.06264 SD Surface conductivity: 2 0.06206 SD

    Phase constant

    8 9 10 11 12 13 14 15 16 170

    0.2

    0.4

    0.6

    0.8

    1

    1.2

    1.4

    1.6

    1.8

    2

    Frequency (GHz)

    Re

    (kz/

    k0)

  • 21

    Mushroom HIS – Modal Interaction (1)

    Modal Interchange

    solid lines: proper complex

    dashed lines: improper complex

    8 9 10 11 12 13 14 15 16 17-0.4

    -0.3

    -0.2

    -0.1

    0

    0.1

    0.2

    0.3

    0.4

    Frequency (GHz)

    Im(k

    z/k

    0)

    Surface conductivity: 2 0.06264 SD Surface conductivity: 2 0.06206 SD

    Attenuation constant

    8 9 10 11 12 13 14 15 16 17-0.4

    -0.3

    -0.2

    -0.1

    0

    0.1

    0.2

    0.3

    0.4

    Frequency (GHz)

    Im(k

    z/k

    0)

  • 22

    Mushroom HIS – Modal Interaction (1)

    Pole dynamics

    solid lines: proper complex

    dashed lines: improper complex

    0.4 0.6 0.8 1 1.2 1.4-0.3

    -0.2

    -0.1

    0

    0.1

    0.2

    0.3

    Re(kz/k

    0)

    Im(k

    z/k

    0)

    0.4 0.6 0.8 1 1.2 1.4-0.3

    -0.2

    -0.1

    0

    0.1

    0.2

    0.3

    Re(kz/k

    0)

    Im(k

    z/k

    0)

    Modal interaction (modal exchange) occurs with varying metal thickness

    (surface conductivity)

    Surface conductivity: 2 0.06264 SD Surface conductivity: 2 0.06206 SD

  • 23

    Mushroom HIS – Modal Interaction (2)

    Pole dynamics

    solid lines: proper complex

    dashed lines: improper complex

    Modal interaction (modal exchange) occurs with varying metal thickness

    (surface conductivity)

    0.4 0.6 0.8 1 1.2 1.4-0.4

    -0.3

    -0.2

    -0.1

    0

    0.1

    0.2

    0.3

    0.4

    0.5

    0.6

    Re(kz/k

    0)

    Im(k

    z/k

    0)

    0.4 0.6 0.8 1 1.2 1.4-0.4

    -0.3

    -0.2

    -0.1

    0

    0.1

    0.2

    0.3

    0.4

    0.5

    0.6

    Re(kz/k

    0)

    Im(k

    z/k

    0)

    Surface conductivity: 2 0.03944 SD Surface conductivity: 2 0.0377 SD

  • (0)nw

    (1)nw

    (2)/ 2n nw

    • Type 0 branch points

    - positive and negative solutions of dispersion equation

    meet forming a second-order zero

    • Type 1 branch points

    - separate branches of complex-conjugate solutions of

    dispersion equation (leaky-wave cutoff)

    • Type 2 branch points

    - connect n and n+2 different modes within a given class (TE or TM)

    , , 0z z

    z zk kH k H kw w w

    , , 0z

    z zkH k H kw w

    Complex frequency-plane branch points:

    Hanson and Yakovlev, Radio Sci., 34, Nov.-Dec. 1999

    Hanson et al., IEEE Trans. Antennas Propag., 51, Feb. 2003

    Yakovlev and Hanson, IEEE Trans. Antennas Propag., 51,

    Apr. 2003

    A complete rotation about in the complex frequency plane results in the smooth interchange of the n and n+2 TM (TE) modes of the metamaterial structure

    (2)/ 2n nw

    Complex Frequency-Plane Branch Points

    24

  • 25

    Evolution of Branch Points

    The branch points control the modal interaction and the position of the branch points

    (below, above, and on the real frequency axis) corresponds to different modal behavior

    Complex Frequency-Plane Branch Points

    13.135 13.14 13.145 13.15 13.155 13.16 13.165 13.17 13.175-0.15

    -0.1

    -0.05

    0

    0.05

    0.1

    0.15

    0.2

    Re{f} (GHz)

    Im{f

    } (G

    Hz)

    2d

    = 0.0754 S

    2d

    = 0.06438 S

    2d

    = 0.06257336554 S

    2d

    = 0.0609 S

    2d

    = 0.0522 S

  • 26

    Mushroom HIS – Modal Interaction

    Modal Exchange and Modal Degeneracy

    solid lines: proper complex

    dashed lines: improper complex

    Modal interaction (modal exchange) and modal degeneracy occur due to presence of

    branch points in the complex frequency plane

    13 13.05 13.1 13.15 13.2 13.25 13.30.76

    0.78

    0.8

    0.82

    0.84

    0.86

    0.88

    0.9

    0.92

    Frequency (GHz)

    Re(k

    z/k

    0)

    2d

    = 0.06438 S

    2d

    = 0.06257336554 S

    2d

    = 0.06438 S

    2d

    = 0.0609 S

    13 13.05 13.1 13.15 13.2 13.25 13.3-0.14

    -0.12

    -0.1

    -0.08

    -0.06

    -0.04

    -0.02

    0

    0.02

    0.04

    Frequency (GHz)

    Im(k

    z/k

    0)

    2d

    = 0.06257336554 S

    2d = 0.06438 S

    2d

    = 0.0609 S

    2d

    = 0.0609 S

  • 27

    Perturbed Wire-Medium Slab

    Wire-medium slab

    solid lines: proper complex

    dashed lines: improper complex

    Phase constant

    0 5 10 15 20 25 30 350

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    Frequency (GHz)

    Re

    al(k z

    /k0)

    TEM

    SD+ABC

    improper real

    HFSS.....

    proper real

    A. B. Yakovlev et.al., IEEE Trans. Microwave Theory Tech., 57, Nov. 2009

    Proper complex solution of mushroom HIS with thin metallic patches in the

    limiting case (transparent patches) continues to a proper real (bound) mode

    of the wire-medium slab

    7

    3 5.8 10 (S/m)D tDD 32

    15 17.5 20 22.5 25 27.5 300

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    Frequency (GHz)

    Re

    (kz/

    k0)

    2d = 5.810

    -4 S

    2d

    = 5.810-6

    S

  • 28

    Conclusions

    A Nonlocal (SD+ABC) homogenization model with generalized ABC is proposed for the analysis of TM natural waves of mushroom structures with thin metal/graphene patches

    It is observed that for some values of surface conductivity (metal thickness) modal interactions (modal exchange) occur, which can be explained by the evolution of complex frequency-plane branch-point singularities across the real frequency axis

    Modal propagation of leaky waves and surface waves is studied in the

    transition of mushroom-type surface to bed-of-nails-type wire media