M. Hücker

Manipulating Competing Order with High Pressure

Neutron Scattering Group (CMPMS)

Correlated Electron Systems(Superconductivity, Magnetism, Electronic Order)

High Temperature Superconductors Transition Metal Oxides Ferroelectrics Heavy Fermion Systems Multiferroics

La2-xBaxCuO4

Charge & Spin Stripes

LBCO

CGO

1 mm

Single-Crystal XRD at Low Temperature

36

0° X

-ray w

ind

ow

Intensity ~10-6 off strongest Bragg Peak Powder XRD not possible E=100keV, 2•1011 photons/sec/mm2

BW5-HASYLAB

High Pressure Beamline at NSLS-II

Single Crystal XRD 4-Circle Diffractometer Point Detector (2D Detector optional) Low Temperature Flux >1011–1012 photons/sec on Sample DAC (MAC,Toroid) Sample Centering

M. v. Zimmermann, HASYLAB J. M. Tranquada, G. Xu, Neutron Scattering Group Y. J. Kim, University of Toronto B. Wells, University of Connecticut D. J. Buttrey, University of Delaware C. C. Kao, Z. Zhong, NSLS

NSLS II

Paris Edinburgh Cell

100 mm3

30 GPa 25 kglow T not so easy

Diamond Anvil Cell

0.0001 mm3

100 GPasmall beamsample positionpressure inhomogeneous

ISIS

Yamada et al. JSSC 1989

Bozovic et al. PRL 2002

LSCO thin filmLSCO bulk

Gao et al. PRB 1994

Hg-1223 bulk

Pressure and Superconductivity

Pressure: affects crystal structure and electronic band structure

buckled

flat

Competing order in LBCO

150

200

250

300

350

La2-xBa

xCuO

4

LTO

HTT

Tem

pera

ture

(K

)

0.100 0.125 0.1500

10

20

30

40

50

60

70LTO

++LTT

Pccn

TCO

Tc

TSO

TLT

LTO

Pccn

LTT

Tem

pera

ture

(K

)

hole doping (x)

single-crystalHXRD

Charge Stripes under Pressure

LTT structure

Charge Stripes

Do stripes survive in flat planes when x=1/8?

Hole Crystallization in 2-Leg Ladder

Blumberg et al. Science 2002

Rusydi et al.

Sr14Cu24O41Abbamonte et al.

RSXSoxygen-K edge

XRD: Zimmermann et al. PRB 2006

3 GPa 4 GPa

7 GPa

NSLS/HASYLAB/NSLSII100keV

Large Volume Pressure Cells for Single-Crystal X-ray Diffraction

100keV

Mini Toroid Cell

1 cm

pressure cell: scattering/absorptionpressure cell: scattering/absorption

pressure cell absorption: factor 10

pressure sensor: CuGeO3pressure sensor: CuGeO3

structural distortion at the spin Peierls transition at 14 K

100 keV beamline BW5 at HASYLAB, Hamburg

E-range:60-200 keV

Crystal type:Si/TaSi2 (100”)Si1-xGex (15”–70”)Our Exp: 35”

E-resolution:600eV at 100keV

Flux(photons/s):2e11/mm2 @ 100keV(100mA, 4.5GeV)

Spot size:0.5mm x 0.5mm to6mm x 6mm

Detector:N2 cooled Ge det.

Wiggler:2Tesla, 17 periods

Competing Order

Lattice density (pressure)

Charge density (doping)

CePd2Si2