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The DRAM market remains volatile due tounbalanced supply and
demand anddifficulty in making a technologicaltransition. DRAM
revenue increased from$73billion in 2017 to $100 billion in 2018due
to high shipment growth and strongpricing. But in 2019 low pricing
and lowshipment volumes reduced DRAMmanufacturer revenues in Q1
2019.
New era smartphones demand devicesthat have lower power
consumption.Memory manufacturers are thereforechallenged to produce
devices with lowerpower consumption, smaller packageshigh
performances and low cost.
As scaling progresses the complexity ofcreating DRAM capacitors
drasticallyincreases. As the technology processshrinks, it has to
use the multiplepatterning lithography technique. Thisincreases
manufacturing process cost.
We present a technological andeconomical comparison of common
LowPower Mobile DRAM found in smartphones. These are 1y Samsung
LPDDR4X,1x Micron LPDDR4 and 1x SK HynixLPDDR4.
Our analysis is based on full teardowns ofthe packages and
LPDDR4 dies to unveilthe technology and process employed byeach
manufacturer, the supply chain andthe cost of the memory wafers,
dies andthe packages.
This report contains detailed die studies,die cross sections and
processes involvedin manufacturing. It details the
physicalanalysis, highlighting the physicalstructures that include
the memorycapacitors and bit line. It matches theprocess
description and physicalstructures with the
applicablemanufacturers’ patents. The report alsoincludes the
manufacturing cost analysisand estimation of the
manufacturers’gross margin.
Finally, the report features an exhaustivecomparison of DRAM
physical structures.It highlights the similarities anddifferences
and their impact on the waferand die cost.
COMPLETE TEARDOWN WITH
• Detailed optical and SEM photos
• Precise measurements
• Material EDX analysis
• Supply chain evaluation
• Manufacturing cost analysis
• Estimated selling price
• Technology and Cost comparison
Mainstream low power mobile DRAM physical analysis and cost
comparison.
REVERSE COSTING® – STRUCTURE, PROCESS & COST REPORT
Title: LPDDR4 Comparison 2019
Pages: 170
Date: November 2019
Format: PDF & Excel file
Price: EUR 6,490
LPDDR4 Memory Comparison 2019
IC – LED – RF – MEMS – IMAGING – PACKAGING – SYSTEM – POWER -
MEMORY - DISPLAY
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TABLE OF CONTENTS
Overview/Introduction
• Executive Summary
• Reverse Costing Methodology
Company Profile
• Samsung
• SK Hynix
• Micron
Technology and Market
• DRAM’s main players Roadmap
• DRAM’s main playersRevenue
Physical Analysis
• Samsung
Overview
Die design
Cross-section
Patents
• SK Hynix
Overview
Die design
Cross-section
Patents
AUTHORS
• Micron
Overview
Die design
Cross-section
Patents
Manufacturing Process Flow
• Overview
• Wafer Fabrication Unit
• Front-End Process
Cost Analysis
• Overview of the cost analysis Yield
Yields explanations and hypotheses
DRAM wafer and die cost
Front-end cost
Component cost
Technology and Cost Analysis Comparison
Estimated Price and Gross Margin Analysis
LPDDR4 MEMORY COMPARISON 2019
RELATED REPORTS
Belinda Dube is working for SystemPlus Consulting as Analyst
inSemiconductor Memories andIntegrated Circuits. She holds aMasters
degree in Nano Scienceand Nanotechnologies from EcoleCentral Lyon
and INSA Lyon.
Véronique Le Troadec has joinedSystem Plus Consulting as
alaboratory engineer. Coming fromAtmel Nantes, she has
extensiveknowledge in failure analysis ofcomponents and in
deprocessing ofintegrated circuits.
Leading-edge 3D NAND Memory Comparison 2018A deep technology
analysis and cost comparison report on cutting edge 3D NAND memory
chips from Toshiba/SanDisk, Samsung, SK Hynix and
Intel/Micron.December 2018 - EUR 4,990*
Toshiba SanDisk 64 Layers 3D NAND MemoryThe latest 3D NAND Flash
memory produced by Toshiba and SanDisk for the IPhone X.November
2018 - EUR 3,990*
Samsung 3D V-NAND 92-Layer MemoryFifth generation 3D NAND memory
chip reveals Samsung’s latest memory technology and fabrication
methods.September 2019 - EUR 3,990*
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COSTING TOOLS
REVERSE COSTING® – STRUCTURE, PROCESS & COST REPORT
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WHAT IS A REVERSE COSTING®?
Reverse Costing® is the process of disassembling a device (or
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LPDDR4 MEMORY COMPARISON 2019
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