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1a

Figure1.4. (a)Diamondlattice.(b)Zincblende lattice.

Figure1.7. (a)Atetrahedronbond.(b)Schematictwodimensionalrepresentationofatetrahedronbond.

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5a

Figure. EnergybandstructuresofSiandGaAs.Circles()electronsintheconductionbands.

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10a

Figure1.20. Measuredionizationenergies(ineV)forvariousimpuritiesinSiandGaAs.Thelevelsbelowthegapcenteraremeasure romt etopo t eva ence an an areacceptorlevelsunlessindicatedbyDfordonorlevel.Thelevelsabove

thegapcenteraremeasuredfromthebottomoftheconductionbandandaredonorlevelsunlessindicatedbyA

8 .

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10b

Figure1.16. FermidistributionfunctionF(E)versus(E EF)for

various temperaturesvarioustemperatures.

Figure1.17. Intrinsicsemiconductor.. .

(c)Fermidistributionfunction.(d)Carrierconcentration.

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12a

Figure1.18. IntrinsiccarrierdensitiesinSiandGaAs asafunction

of

the

reciprocal

of

temperature.

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13a

Figure1.24. FermilevelforSiandGaAs asafunctionoftemperatureandimpurityconcentration.

Thedependenceofthebandgap ontemperatureisshown.9p g p p

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13b

Figure1.25. ElectrondensityasafunctionoftemperatureforaSisamplewithadonorconcentrationof1015 cm3.

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16b

Figure 3 1 Schematic path of an electron in a semicond ctorFigure.1. Schematicpathofanelectroninasemiconductor.

(a)Randomthermalmotion.(b)Combinedmotionduetorandomthermalmotionandanappliedelectricfield.

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23

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17a

Figure.2. DriftvelocityversuselectricfieldinSi.8

Figure 3.22. Drift velocity versus electric field in Si and GaAs NoteFigure.2. DriftvelocityversuselectricfieldinSiandGaAs.NotethatforntypeGaAs,thereisaregionofnegativedifferential

mobility.8,9

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17b

Figure 3.23. Electron distributions under various conditions ofFigure.2. Electrondistributionsundervariousconditionsofelectricfieldsforatwovalleysemiconductor.

Figure2.25. Onepossiblevelocityfieldcharacteristicofatwovalleysemiconductor.

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18a

Figure2.2. Electronmobilityinsiliconversustemperatureforvariousdonorconcentrations.Insertshowsthetheoretical

temperaturedependenceofelectronmobility.3

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18b

Figure2.3. Mobilities anddiffusivitiesinSiandGaAs at300Kasafunction of im urit concentration.3

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18d

Figure2.4. Conductionprocessinanntypesemiconductor(a)atthermalequilibriumand(b)underabiasingcondition.

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19a

Figure2.6. Measurementofresistivityusingafourpointprobe.3

Figure2.7. Resistivityversusimpurityconcentration3 forSiandGaAs.

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