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8/3/2019 Lecture3 Inverter Metrics 2up
http://slidepdf.com/reader/full/lecture3-inverter-metrics-2up 1/15
EE141
1
EECS141 1Lecture #3
EE141EE141- - Fall 2010 Fall 2010 Digital Integrated Digital Integrated Circuits Circuits
Lecture 3Lecture 3Switches, Inverters,Switches, Inverters,
and Design Metricsand Design Metrics
EE141
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EECS141 2Lecture #3
Administrative Stuff Administrative Stuff Discussions start tomorrow (Fri.)
(Next Mon. is Labor Day – may shift Mon.discussion to Fri. afternoon)
Labs start next weekEveryone should have an EECSinstructional account
Homework #1 is due todayHomework #2 due next Thursday
8/3/2019 Lecture3 Inverter Metrics 2up
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EE141
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EECS141 3Lecture #3
Class Material Class Material
Last lectureBasics of IC manufacturing, cost
Today’s lectureTransistor as switchesBuilding an inverter Design metrics
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EECS141 4Lecture #3
What is a Transistor? What is a Transistor?
|V GS |
An MOS Transistor
|V GS | ≥ |VT |
S DR on
A Switch!
S D
G
8/3/2019 Lecture3 Inverter Metrics 2up
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EECS141 5Lecture #3
Switch Model of MOS Transistor Switch Model of MOS Transistor
|VGS |
S D
G
|V GS | < | V T| |V GS | > | V T |
R on
S D S D
GG
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EECS141 6Lecture #3
NMOS and PMOS NMOS and PMOS
V GS > 0
S D
G
V GS < 0
S D
G
NMOS Transistor PMOS Transistor
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EECS141 7Lecture #3
Building a CMOS inverter Building a CMOS inverter
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EECS141 8Lecture #3
Design Metrics Design Metrics
How to evaluate performance of adigital circuit (gate, block, …)?
CostReliabilitySpeed/Performance (delay, frequency)Power
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EECS141 9Lecture #3
Reliability Reliability The real world is analog
All physical quantities you deal with as a circuitdesigner are actually continuous
Thus, even a “digital” signal can be noisy:
i (t )
Inductive coupling Capacitive coupling Power and groundnoise
v(t ) V DD
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EECS141 10Lecture #3
Noise and Digital Systems Noise and Digital Systems Circuit needs to works despite “analog” noise
Digital gates can reject noiseThis is actually how digital systems are defined
Digital system is one where:Discrete values mapped to analog levels and backAll the elements (gates) can reject noise – For “small” amounts of noise, output noise is less than
input noiseThus, for sufficiently “small” noise, the system actsas if it was noiseless
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EECS141 11Lecture #3
Noise Rejection Noise Rejection
Gain = ∞
V in
V out
V DD /2 V DD
V DD
Gain = 0
Gain = 0
To see if a gate rejects noiseLook at its DC voltage transfer characteristic (VTC)See what happens when input is not exactly 1 or 0
Ideal digital gate:Noise needs to belarger than V DD/2to have any effecton gate output
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EECS141 12Lecture #3
More Realistic VTC More Realistic VTC
V(in)
V(out)
VOH
VOL
VM
VOHVOL
f V(out)=V(in)
Switching Threshold
Nominal Voltage Levels
VOH = f (VOL)VOL = f (VOH)VM = f (VM)
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EECS141 13Lecture #3
Voltage Mapping Voltage Mapping
V IL V IH V in
Slope = -1
Slope = -1
V OL
V OH
V out
“ 0” V OL
V IL
V IH
V OH
UndefinedRegion
“ 1”
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EECS141 14Lecture #3
Definition of Noise Margins Definition of Noise Margins
UndefinedRegion
Noise margin high:NMH = VOH – V IH
Noise margin low:NML = V IL – V OL
GateOutput
GateInput
NML
NMH
“0”
“1”
V OL
V OH
V IL
V IH
(Stage M) (Stage M+1)
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EECS141 15Lecture #3
Digital Gate Noise Reduction: Digital Gate Noise Reduction: Regenerative Property Regenerative Property
A chain of inverters
v0 v1 v2 v3 v4 v5 v6
2
V ( V o
l t )
4
v0
v1v2
t (nsec)0
2 1
1
3
5
6 8 10Simulated response
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EECS141 16Lecture #3
Regenerative Property (Another View)Regenerative Property (Another View)
v0
v1
v3
fin v(v)
f (v)
v3
out
v 2 in
Regenerative Non-Regenerativev2
v1
f (v)
fin v(v)
v3
out
v0 in
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EECS141 17Lecture #3
Fan Fan - - in and Fan in and Fan - - out out
N
Fan-out N Fan-in M
M
There is a modified definition of fan-out for CMOS logic
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EECS141 18Lecture #3
Key Reliability Properties Key Reliability Properties Absolute noise margin values are not the only thingsthat matter
e.g., floating (high impedance) nodes are moreeasily disturbed than low impedance nodes (interms of voltage)
Noise immunity (i.e., how well the gate suppressesnoise sources) needs to be considered too
Summary of some key reliability metrics:Noise transfer functions & margin (ideal: gain = ∞ , margin =Vdd /2)Output impedance (ideal: R o = 0)Input impedance (ideal: R i = ∞ )
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EECS141 19Lecture #3
Example: An Old Example: An Old - - time Inverter time Inverter
NM H
V in (V)
V
o u t
( V )
NM L
V M
0.0
1.0
2.0
3.0
4.0
5.0
1.0 2.0 3.0 4.0 5.0
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EECS141 20Lecture #3
Example: An Old Example: An Old - - time Inverter time Inverter
V OH = 3.6VV OL = 0.4VV IL = 0.6VV IH = 2.3VNM H = V OH – V IH = 1.3VNM L = V IL – V OL = 0.2V
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EECS141 21Lecture #3
Performance: Delay Definitions Performance: Delay Definitions
V out
t f
t pHL t pLH
t r
t
V in
t
90%
10%
50%
50%
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EECS141 22Lecture #3
Fanout Fanout of Four (FO4) Delay of Four (FO4) Delay
tFO4
Want a way to characterize the delay of a circuit(roughly) independent of technology
Most common metric:Delay of an inverter driving four copies of itself (t FO4 )
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EECS141 23Lecture #3
A First A First - - Order RC Network Order RC Network
v out
v in C
R
tp = ln (2) τ = 0.69 RC
Important model – matches delay of an inverter
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EECS141 24Lecture #3
Power Dissipation Power Dissipation
Instantaneous power:p(t) = v(t)i(t) = Vsupplyi(t)
Peak power:Ppeak = Vsupplyipeak
Average power:
( )∫ ∫ + +
==T t
t
T t
t supplysupply
ave dt t iT
V dt t p
T P )(
1
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EECS141 25Lecture #3
“ “ Power Power - - Delay Delay ” ” and Energy and Energy - - Delay Delay Want low power and low delay, so how aboutoptimizing the product of the two?
So-called “Power-Delay Product”
Power·Delay is by definition EnergyOptimizing this pushes you to go as slow aspossible
Alternative gate metric: Energy-Delay ProductEDP = (P av ·tp)·tp = E·t p
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EECS141 26Lecture #3
Energy in CMOS Energy in CMOS v out
v in C L
R
The voltage on C L eventually settles to V DD
Thus, charge stored on the capacitor is C LVDDThis charge has to flow out of the power supply
So, energy is just Q·V DD = (C LVDD)·VDD
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EE141
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EECS141 27Lecture #3
Energy (the harder way)Energy (the harder way)
v out
v in C L
R
( ) ( ) ∫ ∫ ∫ ====→
DD V
DD Lout LDD
T T
DD DD DD V C dv C V dt t i V dt t P E 0
2
0 010
( ) ( ) ∫ ∫ ∫ ====
DD V
DD Lout out L
T T
Lout C C V C dv v C dt t i v dt t P E 0
2
0 021
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EECS141 28Lecture #3
Summary Summary Understanding the design metrics thatgovern digital design is crucial
CostRobustnessPerformance/speedPower and energy dissipation
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EECS141 29Lecture #3
Next Lecture Next Lecture
Detailed CMOS switch modelBuilding gates with switchesDesign rules