61
1 Introduction to CMOS VLSI Design Lecture 21: Scaling and Economics David Harris Harvey Mudd College Spring 2004

Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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Page 1: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

1

Introduction toCMOS VLSI

Design

Lecture 21: Scaling and Economics

David Harris

Harvey Mudd CollegeSpring 2004

Page 2: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

2

21: Scaling and Economics Slide 2CMOS VLSI Design

OutlineScaling– Transistors– Interconnect– Future Challenges

VLSI Economics

Page 3: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

3

21: Scaling and Economics Slide 3CMOS VLSI Design

Moore’s LawIn 1965, Gordon Moore predicted the exponential growth of the number of transistors on an ICTransistor count doubledevery year since inventionPredicted > 65,000transistors by 1975!Growth limited by power

[Moore65]

Page 4: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

4

21: Scaling and Economics Slide 4CMOS VLSI Design

More MooreTransistor counts have doubled every 26 months for the past three decades.

Year

Transistors

40048008

8080

8086

80286Intel386

Intel486Pentium

Pentium ProPentium II

Pentium IIIPentium 4

1,000

10,000

100,000

1,000,000

10,000,000

100,000,000

1,000,000,000

1970 1975 1980 1985 1990 1995 2000

Page 5: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

5

21: Scaling and Economics Slide 5CMOS VLSI Design

Speed ImprovementClock frequencies have also increased exponentially– A corollary of Moore’s Law

Year

1

10

100

1,000

10,000

1970 1975 1980 1985 1990 1995 2000 2005

4004

8008

8080

8086

80286

Intel386

Intel486

Pentium

Pentium Pro/II/III

Pentium 4

Clock S

peed (MH

z)

Page 6: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

6

21: Scaling and Economics Slide 6CMOS VLSI Design

Why?Why more transistors per IC?

Why faster computers?

Page 7: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

7

21: Scaling and Economics Slide 7CMOS VLSI Design

Why?Why more transistors per IC?– Smaller transistors– Larger dice

Why faster computers?

Page 8: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

8

21: Scaling and Economics Slide 8CMOS VLSI Design

Why?Why more transistors per IC?– Smaller transistors– Larger dice

Why faster computers?– Smaller, faster transistors– Better microarchitecture (more IPC)– Fewer gate delays per cycle

Page 9: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

9

21: Scaling and Economics Slide 9CMOS VLSI Design

ScalingThe only constant in VLSI is constant changeFeature size shrinks by 30% every 2-3 years– Transistors become cheaper– Transistors become faster– Wires do not improve

(and may get worse)Scale factor S– Typically – Technology nodes

Year

0.1

1

10

1965 1970 1975 1980 1985 1990 1995 2000 2005

Feat

ure

Siz

e (μ

m)

10

6

3

1.51

0.80.6

0.350.25

0.180.13

0.09

2S =

Page 10: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

10

21: Scaling and Economics Slide 10CMOS VLSI Design

Scaling AssumptionsWhat changes between technology nodes?Constant Field Scaling– All dimensions (x, y, z => W, L, tox)– Voltage (VDD)– Doping levels

Lateral Scaling– Only gate length L – Often done as a quick gate shrink (S = 1.05)

Page 11: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 11CMOS VLSI Design

Device Scaling

Page 12: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 12CMOS VLSI Design

Device Scaling

Page 13: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 13CMOS VLSI Design

Device Scaling

Page 14: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

14

21: Scaling and Economics Slide 14CMOS VLSI Design

Device Scaling

Page 15: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 15CMOS VLSI Design

Device Scaling

Page 16: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

16

21: Scaling and Economics Slide 16CMOS VLSI Design

Device Scaling

Page 17: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

17

21: Scaling and Economics Slide 17CMOS VLSI Design

Device Scaling

Page 18: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

18

21: Scaling and Economics Slide 18CMOS VLSI Design

Device Scaling

Page 19: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

19

21: Scaling and Economics Slide 19CMOS VLSI Design

Device Scaling

Page 20: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

20

21: Scaling and Economics Slide 20CMOS VLSI Design

Device Scaling

Page 21: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

21

21: Scaling and Economics Slide 21CMOS VLSI Design

Device Scaling

Page 22: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

22

21: Scaling and Economics Slide 22CMOS VLSI Design

Device Scaling

Page 23: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 23CMOS VLSI Design

ObservationsGate capacitance per micron is nearly independent of processBut ON resistance * micron improves with process

Gates get faster with scaling (good)Dynamic power goes down with scaling (good)Current density goes up with scaling (bad)

Velocity saturation makes lateral scaling unsustainable

Page 24: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 24CMOS VLSI Design

ExampleGate capacitance is typically about 2 fF/μmThe FO4 inverter delay in the TT corner for a process of feature size f (in nm) is about 0.5f psEstimate the ON resistance of a unit (4/2 λ) transistor.

Page 25: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 25CMOS VLSI Design

SolutionGate capacitance is typically about 2 fF/μmThe FO4 inverter delay in the TT corner for a process of feature size f (in nm) is about 0.5f psEstimate the ON resistance of a unit (4/2 λ) transistor.

FO4 = 5 τ = 15 RCRC = (0.5f) / 15 = (f/30) ps/nmIf W = 2f, R = 8.33 kΩ– Unit resistance is roughly independent of f

Page 26: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 26CMOS VLSI Design

Scaling AssumptionsWire thickness– Hold constant vs. reduce in thickness

Wire length– Local / scaled interconnect– Global interconnect

• Die size scaled by Dc ≈ 1.1

Page 27: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 27CMOS VLSI Design

Interconnect Scaling

Page 28: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

28

21: Scaling and Economics Slide 28CMOS VLSI Design

Interconnect Scaling

Page 29: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 29CMOS VLSI Design

Interconnect Scaling

Page 30: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 30CMOS VLSI Design

Interconnect Scaling

Page 31: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 31CMOS VLSI Design

Interconnect Scaling

Page 32: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 32CMOS VLSI Design

Interconnect Scaling

Page 33: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 33CMOS VLSI Design

Interconnect Scaling

Page 34: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 34CMOS VLSI Design

Interconnect Scaling

Page 35: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 35CMOS VLSI Design

Interconnect Scaling

Page 36: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 36CMOS VLSI Design

Interconnect Delay

Page 37: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 37CMOS VLSI Design

Interconnect Delay

Page 38: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

38

21: Scaling and Economics Slide 38CMOS VLSI Design

Interconnect Delay

Page 39: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

39

21: Scaling and Economics Slide 39CMOS VLSI Design

Interconnect Delay

Page 40: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

40

21: Scaling and Economics Slide 40CMOS VLSI Design

Interconnect Delay

Page 41: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 41CMOS VLSI Design

Interconnect Delay

Page 42: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

42

21: Scaling and Economics Slide 42CMOS VLSI Design

Interconnect Delay

Page 43: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 43CMOS VLSI Design

ObservationsCapacitance per micron is remaining constant– About 0.2 fF/μm– Roughly 1/10 of gate capacitance

Local wires are getting faster– Not quite tracking transistor improvement– But not a major problem

Global wires are getting slower– No longer possible to cross chip in one cycle

Page 44: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 44CMOS VLSI Design

ITRSSemiconductor Industry Association forecast– Intl. Technology Roadmap for Semiconductors

Page 45: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 45CMOS VLSI Design

Scaling ImplicationsImproved PerformanceImproved CostInterconnect WoesPower WoesProductivity ChallengesPhysical Limits

Page 46: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 46CMOS VLSI Design

Cost ImprovementIn 2003, $0.01 bought you 100,000 transistors– Moore’s Law is still going strong

[Moore03]

Page 47: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

47

21: Scaling and Economics Slide 47CMOS VLSI Design

Interconnect WoesSIA made a gloomy forecast in 1997– Delay would reach minimum at 250 – 180 nm,

then get worse because of wiresBut…

[SIA97]

Page 48: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

48

21: Scaling and Economics Slide 48CMOS VLSI Design

Interconnect WoesSIA made a gloomy forecast in 1997– Delay would reach minimum at 250 – 180 nm,

then get worse because of wiresBut…– Misleading scale– Global wires

100 kgate blocks ok

Page 49: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 49CMOS VLSI Design

Reachable RadiusWe can’t send a signal across a large fast chip in one cycle anymoreBut the microarchitect can plan around this– Just as off-chip memory latencies were tolerated

Chip size

Scaling ofreachable radius

Page 50: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 50CMOS VLSI Design

Dynamic PowerIntel VP Patrick Gelsinger (ISSCC 2001)– If scaling continues at present pace, by 2005,

high speed processors would have power density of nuclear reactor, by 2010, a rocket nozzle, and by 2015, surface of sun.

– “Business as usual will not work in the future.”Intel stock dropped 8%on the next dayBut attention to power isincreasing

[Moore03]

Page 51: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

51

21: Scaling and Economics Slide 51CMOS VLSI Design

Static PowerVDD decreases– Save dynamic power– Protect thin gate oxides and short channels– No point in high value because of velocity sat.

Vt must decrease to maintain device performanceBut this causes exponential increase in OFF leakageMajor future challenge

Static

Dynamic

[Moore03]

Page 52: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 52CMOS VLSI Design

ProductivityTransistor count is increasing faster than designer productivity (gates / week)– Bigger design teams

• Up to 500 for a high-end microprocessor– More expensive design cost– Pressure to raise productivity

• Rely on synthesis, IP blocks– Need for good engineering managers

Page 53: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

53

21: Scaling and Economics Slide 53CMOS VLSI Design

Physical LimitsWill Moore’s Law run out of steam?– Can’t build transistors smaller than an atom…

Many reasons have been predicted for end of scaling– Dynamic power– Subthreshold leakage, tunneling– Short channel effects– Fabrication costs– Electromigration– Interconnect delay

Rumors of demise have been exaggerated

Page 54: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 54CMOS VLSI Design

VLSI EconomicsSelling price Stotal

– Stotal = Ctotal / (1-m)m = profit marginCtotal = total cost– Nonrecurring engineering cost (NRE)– Recurring cost– Fixed cost

Page 55: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 55CMOS VLSI Design

NREEngineering cost– Depends on size of design team– Include benefits, training, computers– CAD tools:

• Digital front end: $10K• Analog front end: $100K• Digital back end: $1M

Prototype manufacturing– Mask costs: $500k – 1M in 130 nm process– Test fixture and package tooling

Page 56: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 56CMOS VLSI Design

Recurring CostsFabrication– Wafer cost / (Dice per wafer * Yield)– Wafer cost: $500 - $3000– Dice per wafer:

– Yield: Y = e-AD

• For small A, Y ≈ 1, cost proportional to area• For large A, Y → 0, cost increases exponentially

PackagingTest

2 22

r rNA A

π⎡ ⎤

= −⎢ ⎥⎣ ⎦

Page 57: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 57CMOS VLSI Design

Fixed CostsData sheets and application notesMarketing and advertisingYield analysis

Page 58: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 58CMOS VLSI Design

ExampleYou want to start a company to build a wireless communications chip. How much venture capital must you raise?

Because you are smarter than everyone else, you can get away with a small team in just two years:– Seven digital designers– Three analog designers– Five support personnel

Page 59: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 59CMOS VLSI Design

SolutionDigital designers:– salary– overhead– computer– CAD tools– Total:

Analog designers– salary– overhead– computer– CAD tools– Total:

Support staff– salary– overhead– computer– Total:

Fabrication– Back-end tools: – Masks: – Total:

Summary

Page 60: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 60CMOS VLSI Design

SolutionDigital designers:– $70k salary– $30k overhead– $10k computer– $10k CAD tools– Total: $120k * 7 = $840k

Analog designers– $100k salary– $30k overhead– $10k computer– $100k CAD tools– Total: $240k * 3 = $720k

Support staff– $45k salary– $20k overhead– $5k computer– Total: $70k * 5 = $350k

Fabrication– Back-end tools: $1M– Masks: $1M– Total: $2M / year

Summary– 2 years @ $3.91M / year– $8M design & prototype

Page 61: Lecture 21: Scaling and Economics - University of Pittsburgh · 21: Scaling and Economics Slide 24CMOS VLSI Design Example Gate capacitance is typically about 2 fF/μm The FO4 inverter

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21: Scaling and Economics Slide 61CMOS VLSI Design

Cost BreakdownNew chip design is fairly capital-intensiveMaybe you can do it for less?

salary

overhead

computer

entry tools

backend tools

fab

25%

25%

26%

9% 4%11%