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    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-1

    CMOS Analog Circuit Design P.E. Allen - 2010

    LECTURE 360 CHARACTERIZATION OF ADCS AND SAMPL

    AND HOLD CIRCUITS

    LECTURE ORGANIZATION

    Outline

    Introduction to ADCs

    Static characterization of ADCs

    Dynamic characteristics of ADCs

    Sample and hold circuits

    Design of a sample and hold

    Summary

    CMOS Analog Circuit Design,2nd Edition Reference

    Pages 652-665

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-2

    CMOS Analog Circuit Design P.E. Allen - 2010

    INTRODUCTIONGeneral Block Diagram of an Analog-Digital Converter

    Digital

    Processor

    Prefilter Sample/Hold Quantizer Encoder

    x(t) y(kTN)

    Fig.10.5-1

    Prefilter - Avoids the aliasing of high frequency signals back into the baseband of the

    ADC Sample-and-hold - Maintains the input analog signal constant during conversion

    Quantizer - Finds the subrange that corresponds to the sampled analog input

    Encoder - Encoding of the digital bits corresponding to the subrange

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    Nyquist Frequency Analog-Digital Converters

    The sampled nature of the ADC places a practical limit on the bandwidth of the inputsignal. If the sampling frequency isfS, andfB is the bandwidth of the input signal, then

    fB < 0.5fSwhich is simply theNyquistrelationship which states thatto avoid aliasing, the

    sampling frequency must begreater than twice thehighest signal frequency.

    fB-fB 0

    fB-fB 0 fSfS-fB fS+fB 2fS2fS-fB 2fS+fB

    -fB 0 fS 2fS

    AntialiasingFilter

    fS2

    fB-fB 0

    fS2

    fS2

    fS

    fS

    Continuous time frequency response of the analog input signal.

    Sampled data equivalent frequency response wherefB < 0.5fS.

    Case wherefB> 0.5fScausing aliasing.

    Use of an antialiasing filter to avoid aliasing.

    Fig. 10.5-

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-4

    CMOS Analog Circuit Design P.E. Allen - 2010

    Classification of Analog-Digital ConvertersAnalog-digital converters can be classified by the relationship offB and 0.5fSand by their

    conversion rate.

    Nyquist ADCs - ADCs that havefB as close to 0.5fSas possible.

    Oversampling ADCs - ADCs that havefB much less than 0.5fS.

    Classification of Analog-to-Digital Converter Architectures

    ConversionRate

    Nyquist ADCs Oversampled ADCs

    Slow Integrating (Serial) Very high resolution

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    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-5

    CMOS Analog Circuit Design P.E. Allen - 2010

    STATIC CHARACTERIZATION OF ANALOG-TO-DIGITAL CONVERTERS

    Digital Output Codes

    Digital Output Codes used for ADCs

    Decimal Binary Thermometer Gray TwosComplement

    0 000 0000000 000 0001 001 0000001 001 1112 010 0000011 011 1103 011 0000111 010 1014 100 0001111 110 1005 101 0011111 111 0116 110 0111111 101 0107 111 1111111 100 001

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-6

    CMOS Analog Circuit Design P.E. Allen - 2010

    Input-Output Characteristics

    Ideal input-output characteristics of a 3-bit ADC

    Analog Input Value Normalized to VREF

    000

    001

    010

    011

    100

    101

    110

    111

    DigitalOutputCode

    Ideal 3-bit

    Characteristic

    Figure 10.5-3 Ideal input-output characteristics of a 3-bit ADC.

    Infinite Resolution

    Characteristic

    1 LSB

    18

    28

    38

    48

    58

    68

    08

    78

    1 LSB

    vinVREF

    0.5

    1.0

    0.0

    -0.5Quantization

    NoiseLSBs

    88

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    Definitions

    The dynamic range, signal-to-noise ratio (SNR), and the effective number of bits(ENOB) of the ADC are the same as for the DAC

    Resolution of the ADC is the smallest analog change that distinguishable by an ADC.

    Quantization Noise is the 0.5LSB uncertainty between the infinite resolutioncharacteristic and the actual characteristic.

    Offset Error is the difference between the ideal finite resolution characteristic andactual finite resolution characteristic

    Gain Error is thedifference betweenthe ideal finiteresolution charact-eristic and actualfinite resolutioncharacteristicmeasured at full-scale input. Thisdifference is

    proportionalto theanalog inputvoltage.

    000

    001

    010

    011

    100

    101

    110

    111

    vinVREF

    DigitalOutputCode

    Offset = 1.5LSBs

    000

    001

    010

    011

    100

    101

    110

    111

    08

    18

    28

    38

    48

    58

    68

    78

    88

    vinVREF

    DigitalOutputCode

    Gain Error = 1.5LSBs

    (a.) (b.)Figure 10.5-4 - (a.) Example of offset error for a 3-bit ADC. (b.) Example of gain

    error for a 3-bit ADC.

    Ideal

    Characteristic

    Ideal

    Characteristic

    08

    18

    28

    38

    48

    58

    68

    78

    88

    Actual

    Characteristic

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-8

    CMOS Analog Circuit Design P.E. Allen - 2010

    Integral and Differential NonlinearityThe integral and differential nonlinearity of the ADC are referenced to the vertical(digital) axis of the transfer characteristic.

    Integral Nonlinearity (INL) is the maximum difference between the actual finiteresolution characteristic and the ideal finite resolution characteristic measured verticall(% orLSB)

    Differential Nonlinearity (DNL) is a measure of the separation between adjacent levelsmeasured at each vertical step (% orLSB).

    DNL = (Dcx - 1)LSBs

    whereDcx is the size of the actual vertical step inLSBs.

    Note thatINL andDNL of an analog-digital converter will be in terms of integers incontrast to theINL andDNL of the digital-analog converter. As the resolution of theADC increases, this restriction becomes insignificant.

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    Example ofINL and DNL

    000

    001

    010

    011

    100

    101

    110

    111

    08

    18

    28

    38

    48

    58

    68

    78

    88

    vinVREF

    DigitalOutputCode

    Example ofINL andDNL for a 3-bit ADC.) Fig.10.5-5

    Ideal

    Characteristic

    ActualCharacteristic

    INL =

    +1LSB

    INL =

    -1LSB

    DNL =

    +1LSB

    DNL =

    0LSB

    Note that the DNL and INL errors can be specified over some range of the analog input.

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-10

    CMOS Analog Circuit Design P.E. Allen - 2010

    MonotonicityA monotonic ADC has all vertical jumps positive. Note that monotonicity can only bedetected byDNL.

    Example of a nonmonotonic ADC:

    000

    001

    010

    011

    100

    101

    110

    111

    08

    18

    28

    38

    48

    58

    68

    78

    88

    vinVREF

    DigitalO

    utputCode

    DNL =

    -2LSB

    Actual

    Characteristic

    Ideal

    Characteristic

    Fig. 10.5-6L

    If a vertical jump is 2LSB or greater, missing output codes may result.

    If a vertical jump is -1LSB or less, the ADC is not monotonic.

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    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-11

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    Example 360-1 - INLandDNLof a 3-bit ADC

    Find theINL andDNL for the 3-bit ADC shown on the previous slide.

    Solution

    With respect to the digital axis:

    1.) The largest value ofINL for this 3-bit ADC occurs between 3/16 to 5/16 or 7/16 t9/16 and is 1LSB.

    2.) The smallest value ofINL occursbetween 11/16 to 12/16 and is-2LSB.

    3.) The largest value ofDNL occurs at3/16 or 6/8 and is +1LSB.

    4.) The smallest value ofDNL occursat 9/16 and is -2LSB which iswhere the converter becomesnonmonotonic.

    000

    001

    010

    011

    100

    101

    110

    111

    08

    18

    28

    38

    48

    58

    68

    78

    88

    vinVREF

    DigitalOutputCode

    DNL =

    -2LSB

    Actual

    Characteristic

    Ideal

    Characteristic

    Fig. 10.5-6DL

    INL =

    +1LSB

    INL =

    -2LSB

    DNL =

    +1LSB

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-12

    CMOS Analog Circuit Design P.E. Allen - 2010

    DYNAMIC CHARACTERISTICS OF ADCsWhat are the Important Dynamic Characteristics for ADCs?

    The dynamic characteristics of ADCs are influenced by:

    Comparators

    - Linear response

    - Slew response

    Sample-hold circuits

    Circuit parasitics

    Logic propagation delay

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    CMOS Analog Circuit Design P.E. Allen - 2010

    Comparator

    The comparator is the quantizing unit of ADCs.

    Open-loop model:

    +

    -

    Av(s)ViVi

    VOS

    Ri

    RoVo

    V1

    V2Comparator

    Fig.10.5-7

    Nonideal aspects:

    Input offset voltage, VOS(a static characteristic)

    Propagation time delay

    - Bandwidth (linear)

    Av(s) =Av(0)

    sc+1

    =Av(0)

    sc+1- Slew rate (nonlinear)

    T =CV

    I (Iconstant) =V

    SlewRate

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-14

    CMOS Analog Circuit Design P.E. Allen - 2010

    SAMPLE AND HOLD CIRCUITSRequirements of a Sample and Hold Circuit

    The objective of the sample and hold circuit is to sample the unknown analog signal andhold that sample while the ADC decodes the digital equivalent output.

    The sample and hold circuit must:

    1.) Have the accuracy required for the ADC resolution, i.e. accuracy =100%

    2N

    2.) The sample and hold circuit must be fast enough to work in a two-phase clock. For aADC with a 100 Megasample/second sample rate, this means that the sample and holdmust perform its function within 5 nanoseconds.

    3.) Precisely sample the analog signal at the same time for each clock. An advantage ofthe sample and hold circuit is that it removes the precise timing requirements from theADC itself.

    4.) The power dissipation of the sample and hold circuit must be small. Unfortunately,the above requirements for accuracy and speed will mean that the power must beincreased as the bits are increased and/or the clock period reduced.

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    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-15

    CMOS Analog Circuit Design P.E. Allen - 2010

    Sample-and-Hold Circuit

    Waveforms of a sample-and-holdcircuit:

    Definitions:

    Acquisition time (ta) = time required

    to acquire the analog voltage

    Settling time (ts) = time required tosettle to the final held voltage to withinan accuracy tolerance

    Tsample = ta + ts Maximum sample rate =fsample(max) =1

    Tsample

    Other consideratons:

    Aperture time= the time required for the sampling switch to open after the S/Hcommand is initiated

    Aperture jitter = variation in the aperture time due to clock variations and noise

    Types of S/H circuits:

    No feedback - faster, less accurate

    Feedback - slower, more accurate

    ta ts

    Hold Sample Hold

    S/H Command

    vin*(t)

    vin*(t)

    vin(t) vin(t)

    Time

    Amplitude

    Fig.10.5-9

    Output of S/H

    valid for ADC

    conversion

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-16

    CMOS Analog Circuit Design P.E. Allen - 2010

    Open-Loop, Buffered S/H CircuitCircuit:

    +

    -

    vin(t)vout(t)

    CHSwitchClosed

    (sample)

    SwitchOpen(hold)

    SwitchClosed

    (sample)

    vin(t)

    vout(t)vin(t), vout(t)

    vin(t), vout(t)

    Time

    Amplitude

    Fig.10.5-10

    Attributes:

    Fast, open-loop

    Requires current from the input to charge CH

    DC voltage offset of the op amp and the charge feedthrough of the switch will create dcerrors

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    CMOS Analog Circuit Design P.E. Allen - 2010

    Settling Time

    Assume the op amp has a dominant pole at -a and a second pole at -GB.

    The unity-gain response can be approximated as, A(s)GB2

    s2+GBs+GB2

    The resulting step response is, vout(t) = 1 -

    43e

    -0.5GBt sin

    34GBt+

    Defining the error as the difference between the final normalized value and vout

    (t), gives,

    Error(t) = = 1 - vout(t) =43e

    -0.5GBt

    In most ADCs, the error is equal to 0.5LSB. Since the voltage is normalized,

    1

    2N+1 =43e

    -0.5GBts e-0.5GBts = 43

    2N

    Solving for the time, ts, required to settle with 0.5LSB from the above equation gives

    ts =2

    GBln

    4

    32N =

    1GB [1.3863N+ 1.6740]

    Thus as the resolution of the ADC increases, the settling time for any unity-gain buffer

    amplifiers will increase. For example, if we are using the open-loop, buffered S/H circuitin a 10 bit ADC, the amount of time required for the unity-gain buffer with a GB of 1MHzto settle to within 10 bit accuracy is 2.473s.

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-18

    CMOS Analog Circuit Design P.E. Allen - 2010

    Open-Loop, Switched-Capacitor S/H Circuit

    Circuit:

    +

    -

    1d

    1

    2

    vin(t) vout(t)C

    +

    -

    1d

    1

    2

    vin(t) vout(t)

    C

    +

    -

    C

    2 1

    1d

    +

    -

    +

    -

    Fig.10.5-11

    Switched capacitor S/H circuit. Differential switched-capacitor S/H

    Delayed clock used to remove input dependent feedthrough.

    Differential version has lower PSRR, cancellation of even harmonics, and reduction ofcharge injection and clock feedthrough

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    CMOS Analog Circuit Design P.E. Allen - 2010

    Open-Loop, Diode Bridge S/H Circuit

    Diode bridge S/H circuit:VDD

    060927-01

    vIN(t) vOUT(t)

    CH

    IBClock

    IBClock

    vIN(t) vOUT(t)

    CH

    rd rd

    rd rd

    RON= rd

    Sample phase - diodes

    forward biased.

    vIN(t) vOUT(t)

    CH

    ROFF=

    Hold phase - diodes

    reversed biased.

    D1 D2

    D3 D4

    Blowthru Capacitor

    MOS diode bridge S/H circuit:VDD

    060927-02

    vIN(t) vOUT(t)

    CH

    IBClock

    IBClock

    vIN(t) vOUT(t)

    CH

    gm

    RON= 1/gm

    Sample phase - MOS

    diodes forward biased.

    vIN(t) vOUT(t)

    CH

    ROFF=

    Hold phase - MOS

    diodes reversed biased.

    1gm1

    gm1 gm1

    M1 M2

    M3 M4

    Blowthru Capacitor

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-20

    CMOS Analog Circuit Design P.E. Allen - 2010

    Practical Implementation of the Diode Bridge S/H Circuit

    060927-03

    IB IB

    VDD

    VSS

    CH

    vout(t)vin(t)

    D1 D2

    D3 D4 +

    -

    2IB

    D5

    D6SampleHold

    M1 M2

    Practical implementation of the diode bridge

    sample and hold (sample mode).

    IB IB

    VDD

    VSS

    CH

    vout(t)vin(t)

    D1 D2

    D3 D4 +

    -

    2IB

    D5

    D6SampleHold

    M1 M2

    2IB

    IB

    IB

    Hold mode.

    IB2

    IB2

    During the hold mode, the diodes D5 and D6 become forward biased and clamp the uppeand lower nodes of the sampling bridge to the sampled voltage.

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    CMOS Analog Circuit Design P.E. Allen - 2010

    Closed-Loop S/H Circuit

    Circuit:

    +

    -

    +

    -

    1

    1

    2

    CH

    vout(t)

    vin(t)

    +

    - +

    -

    1

    2

    CH

    vout(t)vin(t)

    Fig.10.5-13

    Closed-loop S/H circuit. 1 is the sample

    phase and 2 is the hold phase.

    An improved version.

    Attributes:

    Accurate

    First circuit has signal-dependent feedthrough

    Slower because of the op amp feedback loop

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-22

    CMOS Analog Circuit Design P.E. Allen - 2010

    Closed-Loop, Switched Capacitor S/H CircuitsCircuit:

    +

    -vout(t)vin(t)

    1d1

    2

    CH+

    -

    2

    1 2d1d

    2 1d

    2d

    1d

    2d

    1d 2

    1

    21

    CH

    CH

    CH

    CH

    CH

    CH

    vout(t)vin(t)

    +

    -

    +

    -

    1 2d

    -

    +

    070616-02

    Switched capacitor S/H circuit

    which autozeroes the op amp

    input offset voltage.A differential version that avoids

    large changes at the op amp output

    New charge (2)

    Old charge (2)

    New charge (2)

    Old charge (2)

    Attributes:

    Accurate

    Signal-dependent feedthrough eliminated by a delayed clock

    Differential circuit keeps the output of the op amps constant during the1 phase

    avoiding slew rate limits

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    CMOS Analog Circuit Design P.E. Allen - 2010

    Current-Mode S/H Circuit

    Circuit:

    VDD

    IB

    CH

    11

    2

    iin iout

    Fig.10.5-15

    Attributes:

    Fast

    Requires current in and out

    Good for low voltage implementations

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-24

    CMOS Analog Circuit Design P.E. Allen - 2010

    Aperature Jitter in S/H Circuits

    Illustration:

    If we assume that vin(t) =Vpsint, then themaximum slope is equal toVp.

    Therefore, the value ofVis given as

    V=

    dvin

    dt t= Vpt.

    The rms value of this noise is given as

    V(rms) =

    dvin

    dt t=Vpt 2 .

    The aperature jitter can lead to a limitation in the desired dynamic range of an ADC. Forexample, if the aperature jitter of the clock is 100ps, and the input signal is a full scalepeak-to-peak sinusoid at 1MHz, the rms value of noise due to this aperature jitter is111V(rms) if the value ofVREF= 1V.

    Analog-Digital

    Converter

    Clock

    Analog

    InputDigital

    Output V

    vin

    Aperature Jitter = t

    Figure10.5-14 - Illustration of aperature jitter in an ADC.

    vin(to)

    to

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    CMOS Analog Circuit Design P.E. Allen - 2010

    DESIGN OF A SAMPLE AND HOLD AMPLIFIER

    Specifications

    Accuracy = 10 bits

    Clock frequency is 10 MHz

    Power dissipation 1mW

    Signal level is from 0 to 1V

    Slew rate 100V/s with CL

    = 1pF

    Use 0.25m CMOS

    Technology Parameters (Cox = 60.6x10-4 F/m2):

    Typical Parameter ValueParameterSymbol

    Parameter DescriptionN-Channel P-Channel

    Units

    VT0Threshold Voltage(VBS = 0)

    0.5 0.15 -0.5 0.15 V

    K' Transconductance Para-meter (insaturation)

    120.0 10% 25.0 10% A/V2

    Bulk thresholdparameter

    0.4 0.6 (V)1/2

    Channel lengthmodulation parameter

    0.32 (L=Lmin)

    0.06 (L 2Lmin

    )

    0.56 (L=Lmin)

    0.08 (L 2Lmin

    )(V)-1

    2|F|Surface potential at strong inversion 0.7 0.8 V

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-26

    CMOS Analog Circuit Design P.E. Allen - 2010

    Op Amp DesignGain:

    Gain error =1

    1+LoopGain 0.5 LSB =1

    211

    Therefore, the op amp gain 211 = 2048 V/V

    Choose the op amp gain as 5000 V/V

    Gainbandwidth:

    For a dominant pole op amp with unity-gain feedback, the relationship between thegain-bandwidth (GB), accuracy (N) and speed (ts) is

    ts =

    N+1

    GB ln(2) = 0.693

    N+1

    GB Therefore, ifts 0.5 Tclock= 50 ns (choose ts = 10 ns). ForN= 10, the gain-bandwidth

    is

    GB = 0.762x109 = 120 MHz

    Dominant pole is 24 kHz and with an output capacitance of 1pF this means the outputresistance of the op amp must be 6.6 M.

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    CMOS Analog Circuit Design P.E. Allen - 2010

    Op Amp Design Continued

    The previous specifications suggest aself-compensated op amp. The gain andoutput resistance should be easy to achievewith a cascaded output. A folded-cascodeop amp is proposed for the design. Inorder to have the 0-1V signal range, ap-

    channel, differential input is selected. Thiswill give the input 0-1V range. The outputwill effectively be 0-1V with the unity gainfeedback around the op amp.

    Bias Currents:

    The 100V/s slew rate requiresI3 = 100A. SettingI4 = I5 = 125A gives a power

    dissipation of 0.875mW with VDD = 2.5V.

    061021-01

    VNB1

    M4 M5

    I6

    VPB2

    I4 I5

    VDD= 2.5V

    I7M6 M7

    VNB2

    M8 M9

    M10 M11

    +

    vIN vOUT

    VPB1

    I1 I2

    M1 M2

    M3

    I3

    CL

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-28

    CMOS Analog Circuit Design P.E. Allen - 2010

    Op Amp Design ContinuedTransistor sizes:

    Design M4-M7 to give a saturation voltage of 0.1V with 125A.

    W4L4

    =W5L5

    =W6L6

    =W7L7

    =2ID

    Kn'VDS(sat)2 =

    21251200.01 200

    Since the upper swing is not as important, choose a saturation voltage of 0.25 for M8 M11.

    W8L8

    =W9L9

    =W10L10

    =W11L11

    =2ID

    Kp'VDS(sat)2 =

    2125250.0625 = 160

    To get the GB of 120 MHz, this implies the gm of M1 and M2 isgm = GBCL = (120x10

    62)(10-12) = 762 S

    W1L1

    =W2L2

    =gm

    2

    2IDKp'=

    76276222550 = 232

    Let the upper input common mode voltage be 1.5V which gives the W/L of M3 as,

    1V = VSG1 + VSD3 = 0.631 + VSD3 VSD3 = 0.369V W3L3 60

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    CMOS Analog Circuit Design P.E. Allen - 2010

    Op Amp Design Continued

    We now need to check the output resistance and the gain to make sure the specificationsare satisfied. Let us choose twice minimum channel length to keep the capacitiveparasitics minimized and not have the output resistance too small. Therefore at quiescentconditions,

    rds5 = 133k, rds7 = 222k, gm7 = 1.935mS and rds2 = 250k

    Routdown (rds5||rds2)gm7rds7 = 37.29M

    rds9 =rds11 = 167k, and gm11 = 1.697mS

    Routuprds11gm9rds9 = 47.33M

    Rout 20.86M

    The low frequency gain is,

    Avgm1Rout= 762S20.86M = 15,886 V/V

    The frequency response will be as shown:

    061023-02

    log10f

    15,886

    Gain

    5,000

    24kHz 120MHz

    7.55kHz1

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-30

    CMOS Analog Circuit Design P.E. Allen - 2010

    Op Amp Bias VoltagesWe also need to design the bias voltages VNB1, VNB2, VPB1 and VPB2. This can be done

    using the following circuit:

    Note, the W/L of M3, M4 and M7 will be 6 so thata current of 10A gives 100A in M3 of the opamp. Also, W/L of M1 and M5 will be 16 so acurrent of 10A gives 125A in M4 and M5 of theop amp.

    If M2 is 4 times larger than M1, which gives a W/Lof 64 for M2. Under these conditions,

    I2 =I1 =

    1

    21R2 R =

    106

    21201610 = 5.1k

    The extra 40A brings the power dissipation to

    0.975mW which is still in specification.

    The W/L of M6 and M8 are designed as follows:

    VGS8 = VT+ 2VON VGS8 - VT= 0.2V = 210120(W8/L8) W8L8

    = 4.167

    VSG6 = |VT| + 2VONVSG6 - |VT| = 0.5V = 21025(W6/L6) W6L6

    = 3.20

    061021-02

    VDD

    VPB1

    VPB2

    VNB2

    VNB1

    M1 M2

    M3 M4

    M5

    M6

    M7

    M8

    R

    10A 10A

    10A

    10A

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    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-31

    CMOS Analog Circuit Design P.E. Allen - 2010

    Switch and Hold Capacitor Design

    Switch:

    Since the signal amplitude is from 0 to 1V, a single NMOS switch should besatisfactory. The resistance of a minimum size NMOS switch is,

    RON(worst case) 1Kn'(W/L)(VGS-VT) = 10

    6

    120(1)(1.5-0.5) = 8.33kFor a CH= 1pf, the time constant is 8 ns. This is too close to the 50 ns so let us increasethe switch size to 0.5m/0.25m which gives a time constant of 4ns.

    Therefore, the W/L ratio of the NMOS switch is 0.5m/0.25m and the hold capacitor is1pf.

    Check the error due to channel injection and clock feedthrough-

    If we assume the clock that rises and falls in 1ns, then a 0.5m/0.25m switch works inthe fast transition region. The channel/clock error can be calculated as:

    Verror= -

    WCGDO+Cchannel

    2CL

    VHT-V

    3HT

    6UCL-

    WCGDOCL

    (VS+2VT -VL)

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-32

    CMOS Analog Circuit Design P.E. Allen - 2010

    Switch and Hold Capacitor Design ContinuedAssuming CGDO is 200x10-12 F/m we can calculate VHTas 0.8131V. Thus,

    Verror =

    -

    100x10-18+0.5(7.57x10-16)

    1x10-12

    0.8131-0.105x10-3

    15x10-3-

    100x10-18

    1x10-12(1+1-0) = -0.586mV

    For a 1volt signal with 10 bit accuracy, the error must be less than 1LSB which is0.967mV. The channel/clock error is close to this value and one may have to considerusing a CMOS switch or a dummy switch to reduce the error.

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    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-33

    CMOS Analog Circuit Design P.E. Allen - 2010

    Design Summary

    At this point, the analog designer understands the weaknesses and strengths of thedesign. The next steps will not be done but are listed below:

    1.) Simulation to confirm and explore the hand-calculated performance

    2.) Layout of the op amp, hold capacitor and switch.

    3.) Verification of the layout

    4.) Extraction of the parasitics from the layout5.) Resimulation of the design.

    6.) Check for sensitivity to ESD and latchup.

    7.) Select package and include package parasitics in simulation.

    Lecture 360 Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-34

    SUMMARY

    An ADC is by nature a sampled data circuit (cannot continuously convert analog intodigital)

    Two basic types of ADCs are:

    - Nyquist analog bandwidth is as close to the Nyquist frequency as possible

    - Oversampled analog bandwidth is much smaller than the Nyquist frequency

    The active components in an ADC are the comparator and the sample and hold circuit

    A sample and hold circuit must have at least the accuracy of 100%/2N

    Sample and hold circuits are divided into two types:

    - Open loop which are fast but not as accurate

    - Close loop which are slower but more accurate

    An example of designing a sample and hold amplifier was given to illustrate theelectrical design process for CMOS analog circuits