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ESE319 Introduction to Microelectronics
12008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Common Base BJT AmplifierCommon Collector BJT Amplifier
Common Collector (Emitter Follower) Configuration Common Base Configuration Small Signal Analysis Design Example Amplifier Input and Output Impedances
ESE319 Introduction to Microelectronics
22008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Basic Single BJT Amplifier Features
CE Amplifier CC Amplifier CB AmplifierVoltage Gain (AV) moderate (-RC/RE) low (about 1) high
Current Gain (AI) moderate ( ) moderate ( ) low (about 1)
Input Resistance high high low
Output Resistance high low high
1
CE BJT amplifier => CS MOS amplifierCC BJT amplifier => CD MOS amplifierCB BJT amplifier => CG MOS amplifier
ESE319 Introduction to Microelectronics
32008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Common Collector ( Emitter Follower) Amplifier
In the emitter follower, the output voltage is taken be-tween emitter and ground. The voltage gain of this ampli-fier is nearly one the output follows the input - hence the name: emitter follower.
vout
ESE319 Introduction to Microelectronics
42008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Split bias voltage drops aboutequally across the transistorV
CE (or V
CB) and VRe (or VB).
For simplicity,choose:
R1=R2
For an assumed = 100:
RB=R1R2=R12=1
RE1010 RE
R1=R2=20 REVB=VCC
2
RE=VEI E
=VCC /20.7
I E
Then, choose/specified IE, and the rest of the design follows:
Vb
iB
iC
iE
vout
As with CE bias design, stable op. pt. => RB1RE , i.e.
Emitter Follower Biasing
ESE319 Introduction to Microelectronics
52008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Typical DesignChoose: I E=1mA
VCC=12VAnd the rest of the designfollows immediately:
RE=VEI E
=12 /20.7103
=5.3k
Use standard sizes!
R1=R2=100 k
RE=5.1k
vout
Vb
iB
iC
iE
ESE319 Introduction to Microelectronics
62008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Equivalent Circuits
vout
vout
VCC
/2
Rb
RB=R1R2
ESE319 Introduction to Microelectronics
72008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Multisim Bias Check
Identical results as expected!
Rb
+
-VRb
V Rb= I B RB=I E
1RB=0.495V
iB
Rbvout vout
ESE319 Introduction to Microelectronics
82008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Small signal mid-band circuit - where CB has negligible reactance(above min). Thevenin circuit consisting of RS and RB shows effect of RB negligible, since it is much larger than RS.
Emitter Follower Small Signal Circuit
Mid-band equivalent circuit:
vsig '=RB
RBRSvsig=
5050.05
vsigvsig
RTH=RSRB=50
50.05RSRS
Rb
vout
ESE319 Introduction to Microelectronics
92008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Follower Small Signal Analysis - Voltage GainCircuit analysis:
ib=vsig
RSr1RE
vout=RE 1vsig
RSr1RE
AV=voutvsig
=RE vsig
RSr 1
RE
1
vsig=RSr1RE ib
vout
ib
ie
Solving for ib
ESE319 Introduction to Microelectronics
102008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Small Signal Analysis Voltage Gain - cont.voutvsig
=RE
RSr 1
RE
Since, typically:
RSr1
RE
AV=voutvsig
RERE
=1
Note: AV is non-inverting
vout
ESE319 Introduction to Microelectronics
112008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
ib=vbg
r1RE
Use the base current expression:
To obtain the base to ground resistance of the transistor:This transistor input resistance is in parallel with the 50 k RB, forming the total amplifier input resistance:
Ri n=RSRBr bgRBr bg=515
5155050 k=45.6 k
vbg=r ibRE iE=r1 ibvbg
+
-
Rin r bg=
vbgib
=r1RE1RE=1015.1 k=515k
Rb
RB=50 kRSRS=50
Blocking Capacitor - CB - Selection
ib
ESE319 Introduction to Microelectronics
122008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
CB Selection cont.
Ri n46 k=100
min=220125=1.25102
Assume the lowest frequencyis 20 Hz:
C B10107
1.250.461.73 F
Choose CB such that its reactance is 1/10 of Rin at min:
C B10
min Ri n
1C B
=Ri n10
Pick CB = 2 F (two 1 F caps in parallel), the nearest standard value in the RCA Lab. We could be (unnecessarily) more preciseand include Rs as part of the total resistance in the loop. It is verysmall compared to Rin.
ESE319 Introduction to Microelectronics
132008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Final Design
2.0 uF
vout
ESE319 Introduction to Microelectronics
142008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Multisim Simulation Results
20 Hz. Data
1 Khz. Data
ESE319 Introduction to Microelectronics
152008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Of What value is a Unity Gain Amplifier?
To answer this question,we must examine theoutput impedance of theamplifier and its powergain.
vout
ib
ie
ESE319 Introduction to Microelectronics
162008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Emitter Follower Output Resistance
vx
ix
Rout
0ib
i x=ib ib=1 ib ib=ix1
vx=ibRsr=RSr1
i x
Rout=vxi x=
RSr1
r
1
Assume:I C=1 mA r=
VTI B
=VTI C
=2500
=100 RS=50
Rout2550100
=25.5
vout
RB=50 kRSR
out is the Thevenin resistance looking
into the open-circuit output.
ESE319 Introduction to Microelectronics
172008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Multisim Verification of Rout
Multisim short circuit check( = 100, vout = vsig):
Rout=voci sc
=AV vsig rms
isc rms= 1
0.0396=25.25
Thevenin equivalent for the short-circuited emitter follower. If was 200, as for most good NPN transistors, Rout would be lower - close to 12 .
Rout
Av*vsigAV = 1
i sc=i x
i sc=i x
Rin
i x=1i xvsig=RS ibr ib
Rout=AV vsig
i x=
RSr1Rin=RSr1RERL1RL
+
-voc=AV vsig
ESE319 Introduction to Microelectronics
182008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Equivalent Circuits with Load RL
vout
ib
ie
RL
+-
RL||Revload+
-
Rout=vsig rms i sc rms
= 10.0396
=25.25
RinZin=
vsigie
'
Rin=RSr1RERL1RL
Rout
Av*vsig
ESE319 Introduction to Microelectronics
192008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Emitter Follower Power GainConsider the case where a R
L = 50 load is connected through an infinite
capacitor to the emitter of the follower we designed. Using its Thevenin equivalent:
vload=RL AV vsigRLRout
=5075
vsig=23
vsig
i load=AV vsig
RoutRL=
vsig75
pload=vload i load=2
225vsig
2
i sig=ib=vsigRin
vsig1RERL
vsig
10150
psig=vsig isig1
5000vsig
2
+-
vload
-vth=G vsig
Rout25
RL50+
50 load is in parallel with 5.1k RE and dominates:
C=
AV1iloadRinvsig Av*vsig
G pwr=ploadpsig
= 25000225
=44.41
isig
ESE319 Introduction to Microelectronics
202008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
The Common Base Amplifier
Voltage Bias Design Current Bias Design
vout vout
ESE319 Introduction to Microelectronics
212008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Common Base ConfigurationBoth voltage and current biasing follow the same rules asthose applied to the common emitter amplifier.
As before, insert a blocking capacitor in the input signal pathto avoid disturbing the dc bias.
The common base amplifier uses a bypass capacitor or adirect connection from base to ground to hold the base atground for the signal only!
The common emitter amplifier (except for intentional REfeedback) holds the emitter at signal ground, while the commoncollector circuit does the same for the collector.
ESE319 Introduction to Microelectronics
222008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
We keep the same bias that we established for the gain of 10 common emitter amplifier.All that we need to do is pick the capacitor values and calculate the circuit gain.
vout
470 Ohm
4.7 k Ohm47k Ohm
5.1k Ohm
Voltage Bias Common Base Design
ESE319 Introduction to Microelectronics
232008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Common Base Small Signal Analysis - C INDetermine C
IN:
Find a equivalent impedance for the input circuit, RS, CIN, and RE2:
i'b
I'ci'e
isig
Zin
4.7 k Ohm
470 Ohm
ideally for min
1minC IN
RSRE2r e1
minC IN=
RSr e10
C IN=10
minRSr e
vRe2=RE2r e
RE2r eRS1
jC IN
vsig
vRe2=RE2r e
RE2r eRSvsig
(let ) C B=
ib
ic
ie
r e=r
1
re
ESE319 Introduction to Microelectronics
242008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Determine C IN cont.
minC IN RSr e1C IN10
2minRSr e=
1022075
F
A suitable value for CIN for a 20 Hz lower frequency:
C IN=10
125.6751062F ! Not too practical!
Must choose smaller value of CIN.1. Choose: minC IN RSr e=1
or2. Choose larger min
ESE319 Introduction to Microelectronics
252008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Small-signal Analysis - C Bi'b i'c
i'e
Note the reference currentreversals (due to v
sig polarity)!
vsig=RS ie'r 1jC B ib'
vsig=RS ie'r 1jC B ie
'
1
ie' =
1
1RSr 1
jC B
vsigZin=vsigie
'
ic
ie
ib
Determine
Zin
Determine CB: (let )C IN=
RE2
>> RS
ib'
ESE319 Introduction to Microelectronics
262008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Determine CBi'b i'c
i'e
ie' =
1
1RSr 1
jC B
vsig
ie' =
vsig
RS11 r 1jC B
Z in=vsigie
' =RS11 r 1jC B
ideally Z inRSr 1
1C B
1RSr for min
Zin
RE2
>> RS
ib'
ESE319 Introduction to Microelectronics
272008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Determine - C B cont.i'b i'c
i'e Choose:
C B10
min 1RSr F
vout
Z inRSr 1
1C B
1RSr
For min
C B10
220 1001502500 =10.5 F
i.e.
RE2
>> RS
ib'
ESE319 Introduction to Microelectronics
282008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Small-signal Analysis Voltage Gain
ie'
1
RSr 1
vsig=1
RSr e vsig
vout=RC ic' =RC ie
' =1
RCRSr e
vsig
AV=voutvsig
=1
RCRSr e
=100101
51005025
67
Assume: C B=C IN=
RE2
>> RS
ib'
ESE319 Introduction to Microelectronics
292008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Multisim Simulation
1062 uF
ESE319 Introduction to Microelectronics
302008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL
Multisim Frequency Response
20 Hz. response
1 KHZ. Response