KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R ... · effective design in either a flyback converter or a forward converter Internal Block Diagram #3 VCC 32V 5µA 9V 2.5R 1R 1mA

©2002 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Rev.1.0.5

Features• Precision Fixed Operating Frequency (100/67/50kHz)• Low Start-up Current(Typ. 100uA)• Pulse by Pulse Current Limiting• Over Current Protection• Over Voltage Protection (Min. 25V)• Internal Thermal Shutdown Function• Under Voltage Lockout• Internal High Voltage Sense FET• Auto-Restart Mode

Applications• SMPS for VCR, SVR, STB, DVD & DVCD• SMPS for Printer, Facsimile & Scanner• Adaptor for Camcorder

DescriptionThe Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter

Internal Block Diagram

#3 VCC32V

5µA9V

2.5R1R

1mA

0.1V+

−

OVER VOLTAGE S/D

+

−

7.5V

27V

Thermal S/D

S

RQ

Power on reset

+

−L.E.B

S

RQ

OSC

5VVref

Internalbias

Goodlogic

SFET#2 DRAIN

#1 GND

#4 FB

(*#3 VCC)

(*#4 FB)

(*#1.6.7.8 DRAIN)

(*#2 GND)

*Asterisk - KA5M0365RN, KA5L0365RN

KA5x03xx-SERIESKA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN, KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS)

TO-220F-4L

1. GND 2. Drain 3. VCC 4. FB1

8-DIP

1.6.7.8 Drain2. GND3. VCC4. FB 5. NC

KA5X03XX-SERIES

2

Absolute Maximum Ratings(Ta=25°C, unless otherwise specified)

Note:1. Repetitive rating: Pulse width limited by maximum junction temperature2. L = 51mH, starting Tj = 25°C3. L = 13µH, starting Tj = 25°C

Characteristic Symbol Value UnitKA5H0365R, KA5M0365R, KA5L0365RMaximum Drain Voltage VD,MAX 650 VDrain-Gate Voltage (RGS=1MΩ) VDGR 650 VGate-Source (GND) Voltage VGS ±30 VDrain Current Pulsed (1) IDM 12.0 ADCContinuous Drain Current (TC=25°C) ID 3.0 ADCContinuous Drain Current (TC=100°C) ID 2.4 ADCSingle Pulsed Avalanche Energy (2) EAS 358 mJMaximum Supply Voltage VCC,MAX 30 VAnalog Input Voltage Range VFB -0.3 to VSD V

Total Power DissipationPD 75 W

Derating 0.6 W/°COperating Junction Temperature. TJ +160 °COperating Ambient Temperature. TA -25 to +85 °CStorage Temperature Range. TSTG -55 to +150 °C

KA5H0380R, KA5M0380R, KA5L0380RMaximum Drain Voltage VD,MAX 800 VDrain-Gate Voltage (RGS=1MΩ) VDGR 800 VGate-Source (GND) Voltage VGS ±30 VDrain Current Pulsed (1) IDM 12.0 ADCContinuous Drain Current (TC=25°C) ID 3.0 ADCContinuous Drain Current (TC=100°C) ID 2.1 ADCSingle Pulsed Avalanche Energy (2) EAS 95 mJMaximum Supply Voltage VCC,MAX 30 VAnalog Input Voltage Range VFB -0.3 to VSD V

Total Power DissipationPD 75 W


KA5X03XX-SERIES

3

Absolute Maximum Ratings(Ta=25°C, unless otherwise specified)

Note:1. Repetitive rating: Pulse width limited by maximum junction temperature2. L = 51mH, starting Tj = 25°C3. L = 13µH, starting Tj = 25°C

Characteristic Symbol Value UnitKA5M0365RN, KA5L0365RNMaximum Drain Voltage VD,MAX 650 VDrain-Gate Voltage (RGS=1MΩ) VDGR 650 VGate-Source (GND) Voltage VGS ±30 VDrain Current Pulsed (1) IDM 12.0 ADCContinuous Drain Current (Ta=25°C) ID 0.42 ADCContinuous Drain Current (Ta=100°C) ID 0.28 ADCSingle Pulsed Avalanche Energy (2) EAS 127 mJMaximum Supply Voltage VCC,MAX 30 VAnalog Input Voltage Range VFB -0.3 to VSD V

Total Power DissipationPD 1.56 W


KA5X03XX-SERIES

4

Electrical Characteristics (SenseFET Part)(Ta = 25°C unless otherwise specified)

Note:1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%2.

Parameter Symbol Condition Min. Typ. Max. UnitKA5H0365R, KA5M0365R, KA5L0365RDrain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 650 - - V

Zero Gate Voltage Drain Current IDSSVDS=Max. Rating, VGS=0V - - 50 µAVDS=0.8Max. Rating,VGS=0V, TC=125°C - - 200 µA

Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 ΩForward Transconductance (Note) gfs VDS=50V, ID=0.5A 2.0 - - SInput Capacitance Ciss

VGS=0V, VDS=25V,f=1MHz

- 720 -pFOutput Capacitance Coss - 40 -

Reverse Transfer Capacitance Crss - 40 -Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A

(MOSFET switchingtime is essentiallyindependent ofoperating temperature)

- 150 -

nSRise Time tr - 100 -Turn Off Delay Time td(off) - 150 -Fall Time tf - 42 -Total Gate Charge(Gate-Source+Gate-Drain) Qg VGS=10V, ID=1.0A,

VDS=0.5BVDSS (MOSFET switching time is essentially independent ofoperating temperature)

- - 34

nCGate-Source Charge Qgs - 7.3 -

Gate-Drain (Miller) Charge Qgd - 13.3 -

KA5H0380R, KA5M0380R, KA5L0380RDrain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 800 - - V


Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0 Ω

Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 1.5 2.5 - SInput Capacitance Ciss


- 779 -pFOutput Capacitance Coss - 75.6 -

Reverse Transfer Capacitance Crss - 24.9 -Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A


- 40 -

nSRise Time tr - 95 -Turn Off Delay Time td(off) - 150 -Fall Time tf - 60 -Total Gate Charge(Gate-Source+Gate-Drain) Qg VGS=10V, ID=1.0A,


- - 34

nCGate-Source Charge Qgs - 7.2 -Gate-Drain (Miller) Charge Qgd - 12.1 -

S 1R----=

KA5X03XX-SERIES

5

Electrical Characteristics (SenseFET Part)(Ta = 25°C unless otherwise specified)

Note:1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%2.

Parameter Symbol Condition Min. Typ. Max. UnitKA5M0365RN, KA5L0365RNDrain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 650 - - V


Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 ΩForward Transconductance (Note) gfs VDS=50V, ID=0.5A 2.0 - - SInput Capacitance Ciss


- 314.9 -pFOutput Capacitance Coss - 47 -

Reverse Transfer Capacitance Crss - 9 -Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A


- 11.2 -

nSRise Time tr - 34 -Turn Off Delay Time td(off) - 28.2 -Fall Time tf - 32 -Total Gate Charge(Gate-Source+Gate-Drain) Qg VGS=10V, ID=1.0A,


11.93

nCGate-Source Charge Qgs - 1.95 -

Gate-Drain (Miller) Charge Qgd 6.85

S 1R----=

KA5X03XX-SERIES

6

Electrical Characteristics (Control Part) (Continued)

(Ta = 25°C unless otherwise specified)

Note:1. These parameters, although guaranteed, are not 100% tested in production2. These parameters, although guaranteed, are tested in EDS(water test) process

Characteristic Symbol Test condition Min. Typ. Max. UnitUVLO SECTIONStart Threshold Voltage VSTART VFB=GND 14 15 16 VStop Threshold Voltage VSTOP VFB=GND 8.4 9 9.6 VOSCILLATOR SECTION

Initial Accuracy FOSCKA5H0365RKA5H0380R 90 100 110 kHz

Initial Accuracy FOSCKA5M0365RKA5M0365RNKA5M0380R

61 67 73 kHz

Initial Accuracy FOSCKA5L0365RKA5L0365RNKA5L0380R

45 50 55 kHz

Frequency Change With Temperature (2) - -25°C≤Ta≤+85°C - ±5 ±10 %

Maximum Duty Cycle Dmax KA5H0365RKA5H0380R 62 67 72 %

Maximum Duty Cycle Dmax

KA5M0365RKA5M0365RNKA5M0380RKA5L0365RKA5L0365RNKA5L0380R

72 77 82 %

FEEDBACK SECTIONFeedback Source Current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mAShutdown Feedback Voltage VSD Vfb>6.5V 6.9 7.5 8.1 VShutdown Delay Current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µAREFERENCE SECTIONOutput Voltage (1) Vref Ta=25°C 4.80 5.00 5.20 VTemperature Stability (1)(2) Vref/∆T -25°C≤Ta≤+85°C - 0.3 0.6 mV/°CCURRENT LIMIT(SELF-PROTECTION)SECTIONPeak Current Limit IOVER Max. inductor current 1.89 2.15 2.41 APROTECTION SECTIONOver Voltage Protection VOVP VCC>24V 25 27 29 VThermal Shutdown Temperature (Tj) (1) TSD - 140 160 - °CTOTAL STANDBY CURRENT SECTIONStart-up Current ISTART VCC=14V - 100 170 µAOperating Supply Current(Control Part Only) IOP VCC<28 - 7 12 mA

KA5X03XX-SERIES

7

Typical Performance Characteristics(SenseFET part)(KA5H0365R, KA5M0365R, KA5L0365R)

1 100.1

1

10

@Notes: 1. 300 µs Pulse Test 2. TC = 25 oC

VGSTop : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0VBottom:4.5V

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]2 4 6 8 10

0.1

1

10

@Notes: 1. VDS = 30V 2. 300 µs Pulse Test

-25oC25 oC

150 oC

I D, D

rain

Cur

rent

[A]

VGS, Gate-Source Voltage [V]

0 1 2 3 4 50

1

2

3

4

5

6

7

@ Note : Tj=25

Vgs=10V

Vgs=20V

R DS(

on) ,

[Ω]

Drai

n-So

urce

On-

Resi

stanc

e

ID,Drain Current [A]0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

@Notes : 1. VGS = 0 V 2. 300 µs Pulse Test

25 oC150 oC

I DR, R

ever

se D

rain

Cur

rent

[A]

VSD, Source-Drain Voltage [V]

100 1010

100

200

300

400

500

600

700

Crss

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

Capa

cita

nce

[pF]

VDS, Drain-Source Voltage [V]0 5 10 15 20 25

0

2

4

6

8

10

VDS=520V

VDS=320V

VDS=130V

@ Note : ID=3.0A

V GS,G

ate-

Sour

ce V

olta

ge[V

]

QG,Total Gate Charge [nC]

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

8

Typical Performance Characteristics (Continued)

-50 0 50 100 1500.8

0.9

1.0

1.1

1.2

@ Notes : 1. VGS = 0V 2. ID = 250µA

TJ, Junction Temperature [oC]

BVDS

S, (N

orm

aliz

ed)

Drai

n-So

urce

Bre

akdo

wn V

olta

ge

-50 0 50 100 1500.0

0.5

1.0

1.5

2.0

2.5

@ Notes: 1. VGS = 10V 2. ID = 1.5 A


R DS(o

n), (N

orm

aliz

ed)

Drai

n-So

urce

On-

Resis

tanc

e

100 101 102 10310-2

10-1

100

101

102

10 µs

DC

100 µs1 ms

10 ms

@ Notes : 1. TC = 25

oC

2. TJ = 150 oC

3. Single Pulse

Operation in This Area is Limited by R DS(on)

I D , Drain Current [A]

VDS , Drain-Source Voltage [V]25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

3.0I D,

Dra

in C

urre

nt [A

]

TC, Case Temperature [oC]

10-5 10-4 10-3 10-2 10-1 100 10110-2

10-1

100

single pulse

0.2

0.1

0.010.02

0.05

D=0.5

@ Notes : 1. Z

θJC(t)=1.25 oC/W Max.

2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*ZθJC(t)

Z θJC(t) , Thermal Response

t1 , Square Wave Pulse Duration [sec]

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature

Figure 11. Thermal Response

KA5X03XX-SERIES

9


(KA5H0380R, KA5M0380R, KA5L0380R)

100 10110-1

100

101

@Notes: 1. 300µs Pulse Test 2. TC = 25 oC

VGSTop : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0VBottom:4.5V

I D, Dr

ain

Curre

nt [A

]


10-1

100

101

@ Notes: 1. VDS = 30 V 2. 300 µs Pulse Test

-25 oC25 oC

150 oC

I D, D

rain

Cur

rent

[A]

VGS, Gate-Source Voltage [V]

0.4 0.6 0.8 1.00.1

1

10

@ Notes: 1. VGS = 0V 2. 300 µs Pulse Test

25 oC150 oC

I DR, R

ever

se D

rain

Cur

rent

[A]

VSD, Source-Drain Voltage [V]

100 1010

100

200

300

400

500

600

700

800

900

1000

Crss

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

Capa

citan

ce [p

F]

VDS, Drain-Source Voltage [V]0 5 10 15 20 25 30

0

2

4

6

8

10

@ Note : ID=3.0A

VDS=640V

VDS=400V

VDS=160V

V GS,G

ate-

Sour

ce V

olta

ge[V

]

QG,Total Gate Charge [nC]

0 1 2 3 40

1

2

3

4

5

6

7

8

Vgs=10V

Vgs=20V

@ Note : Tj=25

Fig3. On-Resistance vs. Drain Current

R DS(o

n) ,

[Ω]

Dra

in-S

ourc

e On

-Res

ista

nce

ID,Drain Current

Figure 1. Output Characteristics Figure 2. Thansfer Characteristics



KA5X03XX-SERIES

10


(KA5H0380R, KA5M0380R, KA5L0380R)

10-5 10-4 10-3 10-2 10-1 100 10110-2

10-1

100

single pulse

0.2

0.1

0.010.02

0.05

D=0.5

@ Notes : 1. ZθJC(t)=1.25

oC/W Max.

2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*ZθJC(t)

Z θJC(t) , Thermal Response

t1 , Square Wave Pulse Duration [sec]

-50 0 50 100 1500.8

0.9

1.0

1.1

1.2

@ Notes : 1. VGS = 0V 2. ID = 250µA


BVDS

S, (N

orm

aliz

ed)

Drai

n-So

urce

Bre

akdo

wn V

olta

ge

-50 0 50 100 1500.0

0.5

1.0

1.5

2.0

2.5

R DS(o

n), (N

orm

aliz

ed)

Drai

n-So

urce

On-

Resis

tanc

e


@ Notes: 1. VGS = 10V 2. ID = 1.5 A

101 102 10310-2

10-1

100

101

102

100 µs

DC

10 µs

1 ms

10 ms

@ Notes : 1. TC = 25

oC

2. TJ = 150 oC

3. Single Pulse


I D , Drain Current [A]

VDS , Drain-Source Voltage [V]40 60 80 100 120 140

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5I D,

Dra

in C

urre

nt [A

]

TC, Case Temperature [oC]




KA5X03XX-SERIES

11

Typical Performance Characteristics(SenseFET part) (Continued)

(KA5M0365RN, KA5L0365RN)

100 101

10-1

100

101

VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V

※ Note : 1. 250μ s Pulse Test 2. TC = 25

I D, D

rain

Curre

nt [A

]


10-1

100

101

※ Note 1. VDS = 50V 2. 250μ s Pulse Test

-55150

25

I D , D

rain

Cur

rent

[A]

VGS , Gate-Source Voltage [V]

0 1 2 3 4 5 6 72.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

VGS

= 20V

VGS = 10V

※ Note : TJ = 25

RDS

(ON)

[Ω],

Drain

-Sou

rce

On-R

esist

ance

ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

101

25150

※ Note : 1. VGS = 0V 2. 250μ s Pulse TestI DR

, Re

vers

e Dr

ain

Curre

nt [

A]

VSD

, Source-Drain Voltage [V]

10-1 100 101

100

200

300

400

500

600

700Ciss = Cgs + Cgd (Cds = shorted)C

oss = C

ds + C

gdCrss = Cgd

※ Note ; 1. V

GS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nces

[pF]

VDS, Drain-Source Voltage [V]0 2 4 6 8 10 12

0

2

4

6

8

10

12

VDS

= 325V

VDS = 130V

VDS = 520V

※ Note : ID = 3.0 A

V GS, G

ate-

Sou

rce

Vol

tage

[V]

QG, Total Gate Charge [nC]

Figure 1. Output Characteristics Figure 2. Transfer Characteristics



KA5X03XX-SERIES

12


( KA5M0365RN, KA5L0365RN)

-50 0 50 100 150

0.90

0.95

1.00

1.05

1.10

1.15

※ Note : 1. V

GS = 0 V

2. ID = 250 μ A

BVD

SS, (

Nor

mal

ized)

Drai

n-So

urce

Bre

akdo

wn V

olta

ge


-50 0 50 100 150

0.5

1.0

1.5

2.0

2.5

※ Note : 1. V

GS = 10 V

2. ID = 1.5 A

RD

S(O

N),

(Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce





100 101 10210-3

10-2

10-1

100

101

DC10 s

1 s100 ms

10 ms1 ms

100 µs10 µs


I D, D

rain

Curre

nt [A

]

VDS, Drain-Source Voltage [V]25 50 75 100 125 150

0.0

0.1

0.2

0.3

0.4

0.5

I D, D

rain

Curre

nt [A

]

TC, Case Temperature [? ]

1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000

0.1

1

10

0.05

0.020.01

single pulse

0.2

0.1

D=0.5

? Notes : 1. Z

? JC(t) = 80 ? /W Max.

2. Duty Factor, D=t1/t2 3. T

JM - T

C = P

DM * Z

? JC(t)

Z ?JC(t)

, The

rmal

Res

pons

e

t1, Square Wave Pulse Duration [sec]

KA5X03XX-SERIES

13

Typical Performance Characteristics (Control Part) (Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.1 Operating Frequency

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Fosc

Fig.2 Feedback Source Current

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Ifb

Fig.3 Operating Current

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Iop

Fig.4 Max Inductor Current

0.80.85

0.90.95

1

1.051.1

-25 0 25 50 75 100 125 150

Ipeak

Fig.5 Start up Current

0.5

0.7

0.9

1.1

1.3

1.5

-25 0 25 50 75 100 125 150

Istart

Fig.6 Start Threshold Voltage

0.850.9

0.95

11.051.1

1.15

-25 0 25 50 75 100 125 150

Vstart

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

Figure 5. Start up Current Figure 6. Start Threshold Voltage

Iover

KA5X03XX-SERIES

14



Fig.7 Stop Threshold Voltage

0.850.9

0.951

1.051.1

1.15

-25 0 25 50 75 100 125 150

Vstop

Fig.8 Maximum Duty Cycle

0.850.9

0.951

1.051.1

1.15

-25 0 25 50 75 100 125 150

Dmax

Fig.9 Vcc Zener Voltage

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Vz

Fig.10 Shutdown Feedback Voltage

0.850.9

0.95

11.051.1

1.15

-25 0 25 50 75 100 125 150

Vsd

Fig.11 Shutdown Delay Current

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Idelay

Fig.12 Over Voltage Protection

0.850.9

0.951

1.051.1

1.15

-25 0 25 50 75 100 125 150

Vovp

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

KA5X03XX-SERIES

15



Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance

Fig.13 Soft Start Voltage

0.850.9

0.951

1.051.1

1.15

-25 0 25 50 75 100 125 150

Vss

Fig.14 Drain Source Turn-onResistance

00.5

1

1.52

2.5

-25 0 25 50 75 100 125 150

Rdson

( )

KA5X03XX-SERIES

16

Package Dimensions

TO-220F-4L

KA5X03XX-SERIES

17

Package Dimensions (Continued)

TO-220F-4L(Forming)

KA5X03XX-SERIES

18

Package Dimensions (Continued)

8-DIP

KA5X03XX-SERIES

19

Ordering Information

TU :Non Forming TypeYDTU : Forming type

Product Number Package Marking Code BVDSS FOSC RDS(on)KA5H0365RTU TO-220F-4L

5H0365R 650V 100kHz 3.6ΩKA5H0365RYDTU TO-220F-4L(Forming)

KA5M0365RTU TO-220F-4L5M0365R 650V 67kHz 3.6Ω

KA5M0365RYDTU TO-220F-4L(Forming)

KA5L0365RTU TO-220F-4L5L0365R 650V 50kHz 3.6Ω

KA5L0365RYDTU TO-220F-4L(Forming)

KA5M0365RN 8-DIP 5M0365R 650V 67kHz 3.6Ω

KA5L0365RN 8-DIP 5L0365R 650V 50kHz 3.6Ω

Product Number Package Marking Code BVDSS FOSC RDS(on)KA5H0380RTU TO-220F-4L

5H0380R 800V 100kHz 4.6ΩKA5H0380RYDTU TO-220F-4L(Forming)

KA5M0380RTU TO-220F-4L5M0380R 800V 67kHz 4.6Ω

KA5M0380RYDTU TO-220F-4L(Forming)

KA5L0380RTU TO-220F-4L5L0380R 800V 50kHz 4.6Ω

KA5L0380RYDTU TO-220F-4L(Forming)

KA5X03XX-SERIES

12/12/02 0.0m 001Stock#DSxxxxxxxx

2002 Fairchild Semiconductor Corporation

LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

www.fairchildsemi.com

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

Documents

KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R ... · effective design in either a flyback converter or a forward converter Internal Block Diagram #3 VCC 32V 5µA 9V 2.5R 1R 1mA