K2796

8/22/2019 K2796

1/10

2SK2796(L), 2SK2796(S)

Silicon N Channel MOS FETHigh Speed Power Switching

ADE-208-534C (Z)4th. Edition

Jun 1998

Features

Low on-resistance

RDS(on) = 0.12 typ.

4V gate drive devices.

High speed switching

Outline

12

3

4 4

12

3

1. Gate

2. Drain

3. Source

4. Drain

DPAK |1

D

G

S

8/22/2019 K2796

2/10

2SK2796(L), 2SK2796(S)

2

Absolute Maximum Ratings (Ta = 25C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 60 V

Gate to source voltage VGSS 20 V

Drain current ID 5 A

Drain peak current ID(pulse)Note1 20 A

Body-drain diode reverse drain current IDR 5 A

Avalanche current IAPNote3 5 A

Avalanche energy EARNote3 2.14 mJ

Channel dissipation Pch Note2 20 W

Channel temperature Tch 150 C

Storage temperature Tstg 55 to +150 CNote: 1. PW 10s, duty cycle 1 %

2. Value at Tc = 25C

3. Value at Tch = 25C, Rg 50

8/22/2019 K2796

3/10

2SK2796(L), 2SK2796(S)

3

Electrical Characteristics (Ta = 25C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V(BR)DSS 60 V ID = 10mA, VGS = 0

Gate to source breakdown voltage V(BR)GSS 20 V IG = 100A, VDS = 0

Zero gate voltege drain current IDSS 10 A VDS = 60 V, VGS = 0

Gate to source leak current IGSS 10 A VGS = 16V, VDS = 0

Gate to source cutoff voltage VGS(off) 1.0 2.0 V ID = 1mA, VDS = 10V

Static drain to source on state

resistance

RDS(on) 0.12 0.16 ID = 3 A, VGS = 10VNote4

Static drain to source on state

resistance

RDS(on) 0.16 0.25 ID = 3A, VGS = 4VNote4

Forward transfer admittance |yfs| 2.5 4.0 S ID = 3A, VDS = 10VNote4

Input capacitance Ciss 180 pF VDS = 10V

Output capacitance Coss 90 pF VGS = 0

Reverse transfer capacitance Crss 30 pF f = 1MHz

Turn-on delay time td(on) 9 ns VGS = 10V, ID = 3A

Rise time tr 25 ns RL = 10

Turn-off delay time td(off) 35 ns

Fall time t f 55 ns

Bodydrain diode forward voltage VDF 1.0 V IF = 5A, VGS = 0

Bodydrain diode reverse

recovery time

trr 40 ns IF = 5A, VGS = 0

diF/ dt =50A/s

Note: 4. Pulse test

8/22/2019 K2796

4/10

2SK2796(L), 2SK2796(S)

4

Main Characteristics

0.2 0.5 1 2 10 20 100

5

4

3

2

1

0 2 4 6 8 10

5

4

3

2

1

0 2 4 6 8 10

D

10 V 6 V

40

30

20

10

0 50 100 150 200

100

30

10

3

1

0.3

0.1

3.5 V

4 V

5 V

V = 2 VGS

2.5 V

3 VTc = 75C

25C

25C

ChannelDissipation

Pch(W)

Ambient Temperature Ta (C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)DS

DrainCurrent

I

(A)

D

Maximum Safe Operation Area


Dr

ainCurrent

I

(A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)GS

DrainCurrent

I

(A)

Typical Transfer Characteristics

V = 10 V

Pulse TestDS

5 50

Ta = 25C

1ms

PW=10m

s(1shot)

DCOperation(Tc=25C)

Operation inthis area islimited by R DS(on)

100s

10s

Pulse Test

8/22/2019 K2796

5/10

2SK2796(L), 2SK2796(S)

5

2.0

1.6

1.2

0.8

0.4

0 2 4 6 8 10 0.1 3 1000.3 30

5

2

1

0.2

0.5

0.1

0.05

0.5

0.4

0.3

0.2

0.1

40 0 40 80 120 1600

0.1 0.2 0.5 1 2 5 10

10

5

1

2

0.2

0.5

0.1

101

I = 5 AD

V = 4 VGS

10 V

1, 2 A

I = 5 AD

2 A

1 A

V = 4 VGS

10 V

1 A2 A

5 A

25 C

Tc = 25 C

75 C

Gate to Source Voltage V (V)GS

Drain to Source Saturation Voltage vs.Gate to Source Voltage

V

(V)

DS(on)

DraintoSourceSaturationVoltage

Drain Current I (A)D

DraintoSourceOnStateRe

sistance

R

(

)W

DS(o

n)

Static Drain to Source on State Resistancevs. Drain Current

Case Temperature Tc (C)

R

(

)

DS(on)

StaticDraintoSourceonStateResistance

W

Static Drain to Source on State Resistancevs. Temperature


F

orwardTransferAdmittance

|y

|(S)

fs

Forward Transfer Admittance vs.Drain Current

Pulse Test

Pulse Test Pulse Test

V = 10 V

Pulse TestDS

8/22/2019 K2796

6/10

2SK2796(L), 2SK2796(S)

6

0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50

1000

200

500

100

10

20

50

100

80

60

40

20

0

20

16

12

8

4

2 4 6 8 10

0

100

50

10

20

2

5

1

500

200

50

100

10

20

5

di / dt = 50 A / s

V = 0, Ta = 25 CGS

V = 0

f = 1 MHz

GS

Ciss

Coss

Crss

I = 5 AD

VGS

VDS

V = 50 V25 V

10 V

DD

V = 10 V25 V50 V

DD

0.1 0.2 0.5 1 2 5 10

V = 10 V, V = 30 V

PW = 5 s, duty < 1 %

GS DD

t frt

d(on)t

d(off)t

Reverse Drain Current I (A)DR

ReverseRecoveryTime

tr

r(ns)

BodyDrain Diode ReverseRecovery Time

Capacitance

C

(p

F)


Typical Capacitance vs.Drain to Source Voltage

Gate Charge Qg (nc)

DraintoSourceVoltage

V

(V)

DS

GatetoSourceVoltage

V

(V)

GS

Dynamic Input Characteristics


SwitchingTime

t(ns)

Switching Characteristics

8/22/2019 K2796

7/10

2SK2796(L), 2SK2796(S)

7

10

8

6

4

2

0 0.4 0.8 1.2 1.6 2.0

V = 0, 5 VGS

10 V

5 V

Source to Drain Voltage V (V)SD

ReverseDrainCurrent

I

(A)

DR

Reverse Drain Current vs.Source to Drain Voltage

Pulse Test

2.5

2.0

1.5

1.0

0.5

25 50 75 100 125 1500

Channel Temperature Tch (C)

RepetitiveAvalancheEnergy

E

(mJ)

AR

Maximun Avalanche Energy vs.Channel Temperature Derating

D. U. TRg

IMonitor

AP

VMonitor

DS

VDD

50WVin15 V

0

I D

VDS

I AP

V(BR)DSS

L

VDD

E = L I 2

1 V

V VAR APDSS

DSS DD

2

Avalanche Test Circuit Avalanche Waveform

I = 5 A

V = 25 V

duty < 0.1 %Rg > 50

AP

DD

W

8/22/2019 K2796

8/10

2SK2796(L), 2SK2796(S)

8

Vin Monitor

D.U.T.

Vin10 V

R L

V= 30 V

DD

trtd(on)

Vin

90% 90%

10%

10%Vout

td(off)

VoutMonitor

50W

90%

10%

t f

Switching Time Test Circuit Waveform

3

1

0.3

0.1

0.03

0.0110 100 1 m 10 m 100 m 1 10

DMP

PW

T

D =PW

T

ch c(t) = s (t) ch c

ch c = 6.25 C/W, Tc = 25 C

q g q

q

D = 1

0.5

0.2

0.01

0.02

0.1

0.05

1shotPu

lse

Tc = 25C

Pulse Width PW (S)

Norm

alizedTransientThermalImpe

dance

s

(t)

g

Normalized Transient Thermal Impedance vs. Pulse Width

8/22/2019 K2796

9/10

2SK2796(L), 2SK2796(S)

9

Package Dimensions

Unit: mm

Hitachi Code

EIAJ ( L type)

EIAJ ( S type)

JEDEC

DPAK

SC63

SC64

6.5 0.5

5.4 0.5

1.15 0.1

0.8 0.1

2.3 0.5

0.55 0.1

2.29 0.50.55 0.1 1.5 Max

1.70.5

5.50.5

3.10.5

7.2

16.20.5

2.29 0.5

typeL

6.5 0.55.4 0.5

1.15 0.1

0.8 0.1

2.3 0.50.55 0.1

1.70.5

5.50.5

9.50.5

2.50.5

2.29 0.5 2.29 0.5

1.2Max

0.55 0.1

0 ~ 0.25

S

type

8/22/2019 K2796

10/10

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,

copyright, trademark, or other intellectual property rights for information contained in this document.

Hitachi bears no responsibility for problems that may arise with third partys rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachis sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlyfor maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanTel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533

URL NorthAmerica : http:semiconductor.hitachi.com/Europe : http://www.hitachi-eu.com/hel/ecgAsia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htmAsia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htmAsia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htmJapan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167,Tun-Hwa North Road, Taipei (105)Tel: (2) 2718-3666Fax: (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong KongTel: (2) 735 9218Fax: (2) 730 0281Telex: 40815 HITEC HXHitachi Europe Ltd.

Electronic Components Group.Whitebrook ParkLower Cookham RoadMaidenheadBerkshire SL6 8YA, United KingdomTel: (1628) 585000Fax: (1628) 778322

Hitachi Europe GmbHElectronic components GroupDornacher Strae 3D-85622 Feldkirchen, MunichGermanyTel: (89) 9 9180-0Fax: (89) 9 29 30 00

Hitachi Semiconductor(America) Inc.179 East Tasman Drive,San Jose,CA 95134Tel: (408) 433-1990Fax: (408) 433-0223

For further information write to:

Documents

K2796