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    2746 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010

    A Fully-Integrated 77-GHz FMCW Radar Transceiverin 65-nm CMOS Technology

    Jri Lee, Member, IEEE, Yi-An Li, Meng-Hsiung Hung, and Shih-Jou Huang

    AbstractA fully-integrated FMCW radar system for automo-tive applications operating at 77 GHz has been proposed. Utilizinga fractional- synthesizer as the FMCW generator, the trans-mitter linearly modulates the carrier frequency across a rangeof 700 MHz. The receiver together with an external basebandprocessor detects the distance and relative speed by conductingan FFT-based algorithm. Millimeter-wave PA and LNA areincorporated on chip, providing sufficient gain, bandwidth, andsensitivity. Fabricated in 65-nm CMOS technology, this prototypeprovides a maximum detectable distance of 106 meters for amid-size car while consuming 243 mW from a 1.2-V supply.

    Index Terms77 GHz, fast Fourier transform (FFT), frac-

    tional- synthesizer, frequency modulated continuous-wave(FMCW) radar, low-noise amplifier (LNA), power amplifier (PA).

    I. INTRODUCTION

    THE emerging automotive radar systems have been devel-

    oped over the past years to create a more secure and more

    comfortable driving environment. Up to now, quite a few stan-

    dards have been established for different applications (Fig. 1).

    For example, short-range ( m) radars are adopted to pro-

    vide parking assistance or to prevent side-crash, which utilizes

    pulse-based modulation with a wide bandwidth of 7 GHz. Be-

    cause of the short distance, it must provide a wide azimuthangle and a fine resolution ( cm) [1]. Used in the

    Stop-and-Go system,1 the mid-range radars usually operate at

    24-GHz band to cover a distance of 1040 m with an angle of

    30 60 [2], [3]. The 77-GHz band, on the other hand, has been

    dedicated to long-range radars, e.g., the adaptive cruise control

    (ACC) system, which basically detects the distance and the rela-

    tive speed of the vehicles in front so as to perform a real-time re-

    sponse by means of the braking system or other protective mech-

    anism. It must cover a range up to 100150 meters [4]. At the

    speed of 110 km/h, saving one second response time is equiva-

    lent to extending over 30 meters for braking. With proper oper-

    ation, such an anti-collision system can reduce a great amount

    of casualties in traffic accident.

    The 77-GHz radar presents significant advantages over

    microwave (e.g., 24-GHz) radars. The more compact size

    Manuscript received April 06, 2010; revised June 29, 2010; accepted August12, 2010. Date of publication October 28, 2010; date of current version De-cember 03, 2010. This paper was approved by Guest Editor Ranjit Gharpurey.

    The authors are with the Electrical Engineering Department, National TaiwanUniversity, Taipei, Taiwan (e-mail: [email protected]).

    Color versions of one or more of the figures in this paper are available onlineat http://ieeexplore.ieee.org.

    Digital Object Identifier 10.1109/JSSC.2010.2075250

    1A cruise control system that could maintain a safe driving distance from the

    vehicle ahead while in heavy traffic.

    (especially in antenna design) makes it suitable for further

    integration. The associated narrow-beamwidth requirement

    fits in with long-distance applications. For example, high-gain

    narrow-beamwidth antennas such as horn or dish can be used.

    Also, as compared with the laser radar, which is subject to

    disturbance by rain or mist, millimeter wave reveals better

    environmental resistance. However, even with modern tech-

    nology, 77-GHz radar systems are still very expensive and can

    only be applied to luxury cars. It is because in conventional

    approaches, engineers need to collect individual mm-wave

    circuits and put them together as a module, rather than real-

    izing a fully-integrated circuit in one chip. It inevitably suffersfrom high cost and low yield. Today, the trend to popularize

    this high-end technique puts more pressure on cost reduction.

    Research on 77-GHz automotive radars has been extensively

    conducted over the past years. For example, [5] and [6] pro-

    vide single-chip transceivers and transceiver arrays in SiGe

    BiCMOS technology, respectively, and 77-GHz transceivers are

    also demonstrated in CMOS [7], [8]. Even so, highly-integrated

    77-GHz radar transceivers have never been realized in CMOS

    before. Unlike compound technologies, CMOS manifests itself

    in its low cost, high yield, and potential of highly integration,

    and it is of course desirable to implement long range radar

    transceivers in CMOS. In this paper, we propose a solutionthat integrates the whole transceiver in single chip, which

    along with antennas and baseband processor forms a complete

    system. It substantially reduces the cost and increases the

    reliability. Note that [9] only accomplishes the transmit part

    . Whole-system

    assembly requires much more effort than building up blocks.

    Before looking at design details, we need to evaluate the chal-

    lenges of realizing such a high-frequency system. It is well-

    known that the returned power loss of a radar system is given

    by

    (1)

    where denote the transmitted and received power,

    the gain of antennas, the radar cross section, the wave-

    length, and the distance [10]. At 77 GHz, the reflected wave

    would be attenuated by approximately 150 dB at a distance of

    100 meters. Here, the radar cross section is defined as

    (2)

    where denotes the incident power density measured at the

    target, and the scattered power density seen at a distance

    0018-9200/$26.00 2010 IEEE

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    LEEet al.: A FULLY-INTEGRATED 77-GHz FMCW RADAR TRANSCEIVER IN 65-nm CMOS TECHNOLOGY 2747

    Fig. 1. Classification of automotive radar systems.

    away from the target. For a mid-size automotive,

    m [11]. In the receive side, the lowest detectable power level

    can be expressed as [10]

    (3)

    where denotes the overall receiver noise figure and

    the fast Fourier transform (FFT) resolution band-

    width. Here we assume the intermediate frequency (IF) of the

    FMCW radar is calculated by doing FFT. In radar systems, a

    detectable signal needs to present a signal-to-noise ratio (SNR)

    higher than 16 dB [10]. Considering 1-kHz FFT bandwidth,

    and approximately 28-dB total noise figure ( , obtained

    from simulation), we can calculate the minimum detectable

    power level as around dBm. Compared with standard

    2.4-GHz transceivers (e.g., Bluetooth [12], which have RF

    input sensitivity of dBm), the receiver here must deal witheven weaker signals. Meanwhile, to reach a longer distance, it

    is desirable to suppress as much as possible, which in

    turn requires a high-gain low-noise amplifier (LNA).

    To estimate the minimum required output power in the

    transmit side , we have

    (4)

    where represents the receiver (Rx) sensitivity, the

    antenna gain. Suppose each antenna contributes 20-dBi gain, we

    obtain that the power amplifier (PA) in the transmitter (Tx) mustdeliver at least 10 dBm of power for a 100-m ranging distance. In

    other words, high output power PA and high-gain antennas are

    essential. The 20-dBi antenna gain can be achieved by some spe-

    cific structures. So far, horn and dish antennas still prove to be

    the most suitable structures because they concentrate radiation

    energy efficiently. As will be discussed in Section VI, planar an-

    tennas such as patch arrays may achieve similar performance as

    well. The interconnection between chip and antenna is another

    issue, since the signal at 77 GHz can get attenuated significantly

    by travelling through only a small piece of wire. In our proto-

    type, the lengths of the bonding wires are minimized to about

    250300 m.

    In advanced CMOS technologies, the millimeter-wave (mm-wave) PA and LNA designs become applicable. However, the

    Fig. 2. Performance analysis of CMOS mm-wave circuits: (a)

    of PAs, (b)power gain and (c) noise figure of LNAs.

    design margins are still quite small. To be more specific, we

    can analyze the performance of state-of-the-art PAs and LNAs,

    and predict their output saturation power ( , for PAs) and

    power gain (for LNAs) at 77 GHz by regression. As illustrated

    in Fig. 2(a) and (b), they are approximately 7.5 dBm and 11 dB.

    For the radar to function properly, we need a PA with of at

    least 10 dBm and an LNA with -dB gain and -dB NF.

    Thus, it is necessary to adopt modern mm-wave circuit designs

    so as to achieve the required performance. Block optimization

    and integration technique are equally important. Similarly, thenoise figure of LNAs must be kept below 10 dB as the intersec-

    tion point is about 7.5 dB [Fig. 2(c)]. Note that the down-conver-

    sion mixer and IF amplifier contribute significant noise figure as

    well.

    In architecture level, conventional structures tend to use an

    integer- phase-locked loop (PLL) with a programmable di-

    rect digital frequency synthesizer (DDFS) as the reference input

    [27]. The frequency modulation is accomplished by changing

    the input reference . This approach, however, suffers from

    severe power and area penalties, primarily because the DDFS

    may need high-resolution digital-to-analog converters (DACs)

    and large read-only memory (ROM) tables to achieve fine fre-quency tuning. The linearity of modulated frequency is deter-

    mined by that of the DDFS, which may undergo inaccuracy

    of frequency chirping. In our design, we remove the DDFS

    entirely and incorporate a fractional- PLL instead. The fre-

    quency modulation is therefore achieved by changing the di-

    vide modulus. We integrate the FMCW generator and the radio

    frequency (RF) front-end in one chip, and have it co-designed

    with the interconnection to antennas. Together with signal pro-

    cessor realized in a field programmable gate array (FPGA), the

    FMCW radar system is capable of detecting multiple objects

    and exhibiting their positions and speeds in real time.

    This paper is organized as follows. Section II briefly describes

    the FMCW radar theory. Section III presents the transceiverarchitecture, revealing system level considerations. Section IV

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    2748 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010

    Fig. 3. FMCW radar operation for (a) general case, (b) longest distance, (c) highest speed.

    Fig. 4. (a) FMCW radar system architecture, (b) triangular frequency modula-tion, (c) loop bandwidth selection.

    discusses building block designs, and a complete testing result is

    summarized in Section V. Consideration for future work is dis-

    cussed in Section VI. Finally, Section VII concludes this work.

    II. FMCW RADARAn FMCW radar transmits a continuous wave, which is trian-

    gularly modulated in frequency, and receives the wave reflected

    from objects. As can be illustrated in Fig. 3(a), for a moving

    target, the received frequency would be shifted (i.e., Doppler

    shift), resulting in two different offset frequencies and

    for the falling and rising ramps. Denoting the modulation range

    and period as and , respectively, wecan derivethedistance

    and the relative velocity as

    (5)

    (6)

    where represents the center frequency and the speed of light.In this design, we have MHz, and msec,

    leading to a ranging resolution of approximately

    21.4 cm. Here, we assume and are obtained by counting

    their cycles, which must be integers in each period. Since

    the detectable offset frequencies need to be counted at least once

    in each ramp, we conclude that the minimum (and ) is

    equal to . By the same token, the lowest difference be-

    tween the two offsetfrequencies isequal to

    kHz. It translates t o a speed resolution of , w hich

    is equal to 4.7 km/h. For automotive application, these resolu-

    tions are sufficient in most cases.

    It is also interesting to look into the maximum ranging limits

    of such an FMCW radar. For a stationary object standing veryfar away from the detector, the two sawtooth waveforms become

    apart from each other. This extreme case is shown in Fig. 3(b),

    where . Such a condition corresponds to a dis-

    tance of km, given that the very unstable

    and (only appear for a very short period of time) can

    be obtained. Similarly, the maximum detectable speed can be

    calculated as illustrated in Fig. 3(c). Here, one of the offset fre-

    quencies drops to zero under this circumstance. The maximum

    detectable speed is therefore given by , which is

    a function of distance . For m, the highest detectable

    speed is about 2182 km/h. Since we are looking at distance and

    speed 23 orders less than the extreme cases, the FMCW oper-ation here is quite robust.

    III. TRANSCEIVERARCHITECTURE

    The transceiver architecture is illustrated in Fig. 4(a). It con-

    tains an RF front-end (PA, LNA, and mixer), two high-gain an-

    tennas, an FMCW generator (basically a fractional- synthe-

    sizer), and an FPGA-based signal processor. By tuning the di-

    vide modulus, the full-rate VCO delivers FMCW carrier signal

    around 77 GHz directly to the PA, the mixer, and the first di-

    vider. One important advantage of this structure is that it re-

    quires no frequency doublers or triplers, simplifying the circuit

    design by eliminating lots of mm-wave blocks. The referenceclock is set to about 700 MHz, created by an external

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    LEEet al.: A FULLY-INTEGRATED 77-GHz FMCW RADAR TRANSCEIVER IN 65-nm CMOS TECHNOLOGY 2749

    PLL with a crystal oscillator (50 MHz) for simple implementa-

    tion. If necessary, this low-speed PLL can be further integrated

    into the transceiver. A 16-bit - modulator produces a 3-bit

    modulation signal for the divider, which follows the

    2nd divider. Note that the power consumption of this architec-

    ture is at least 2 orders less than that of the DDFS version. The

    full-rate clock is amplified by the PA and coupled to the antennadirectly.

    In the receiver path, another antenna captures the reflected

    signal. After the LNA and mixer, we obtain the IF signal and

    have it digitized by means of an external analog-to-digital con-

    verter (ADC) before sending it to the digital signal processor

    (DSP). The ADC provides 12-bit output with sampling rate of

    3 MSample/s. Again, if necessary, it can be easily included in

    the main chip. Since the IF is quite low, the ADC power con-

    sumption can be kept less than 1 mW [28]. An FFT algorithm is

    implemented in the FPGA to calculate the distance and speed,

    which can track up to 5 objects simultaneously. In order to

    achieve the best frequency resolution, the FFT sampling time

    should be as large as to fully utilize the information forIF frequency estimation at each and interval. However,

    since the number of FFT points are usually a power of 2, the

    FFT sampling time here may be slightly smaller than

    if the sample rate is pre-selected. In this design, we choose a

    2048-point FFT with 3-MSample/s sampling rate, leading to an

    FFT sampling time as

    (7)

    Equation (7) corresponds to 1.46-kHz frequency resolution.

    It is also important to look at the modulation mechanism. Asshown in Fig. 4(b), the ramp is composed of 8192 steps with

    stepping rate of about 10.9 MHz . Note that

    the stepping isaccomplished byusing the output, which

    facilitates the synchronization between DSP (in FPGA) and the

    modulation logics (on chip). The - resolution is thus given

    by

    (8)

    In other words, each step corresponds to 2 LSBs. The loop band-

    width of the frequency synthesizer is of great concern as well. In

    order to achieve a linear triangular profile with steep turn-around

    points, the bandwidth must be much greater than the modulation

    frequency, which is 0.67 kHz, and less than the stepping rate,

    which is 10.9 MHz [Fig. 4(c)]. In this design, the loop band-

    width is set to be 1 MHz as an optimal value.

    Other issues may affect the transceiver performance and need

    to be considered carefully. For example, to extract and

    correctly, the logics on the board and the chip must be synchro-

    nized by the same reset and clock signals. Adaptability is impor-

    tant as well. Parameters such as and had better be madeprogrammable to meet different standards.

    Fig. 5. (a) VCO and its tuning range, (b) 1st frequency divider stage.

    Fig. 6. 38.5-GHz frequency divider.

    IV. BUILDINGBLOCKS

    In this section, we introduce circuit details of building blocks

    and their design considerations.

    A. VCO and Frequency Dividers

    Fig. 5(a) depicts the 77-GHz VCO design. It is implemented

    as a standard tank structure with thick-oxide (5.6-nm) varac-

    tors to suppress the leakage. Simulation suggests a tuning range

    of about 1 GHz. To drive a large loading of 66 fF for the divider,the PA, and the mixer at 77 GHz, we employ a pseudo-differen-

    tial tuned amplifier pair - as a buffer. It is also possible

    to incorporate a cascode structure to further isolate the VCO.

    However, in such a low-supply design, the buffers output swing

    would be somewhat degraded, if another deck of devices were

    added. The parasitic capacitance introduced at internal nodes

    would cause significant loss as well.

    The first divider stage is realized as a direct injection-locked

    topology [Fig. 5(b)], where the injection signal is ac-coupled to

    the gate of the switch . The bias voltage affects the lock

    range significantly. Higher produces a larger lock range by

    degrading the tank , which in turn decreases the output swing.

    As can be clearly shown in Fig. 5(b), with input swing of 800mV , the divider fails for V, where the equivalent

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    2750 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010

    Fig. 7. (a) Prescaler design, (b) 4 cell, (c) CML-to-CMOS converter.

    tank loss exceeds . Here, we choose V to

    arrive at a lock range of 4 GHz with sufficient design margin.

    Note that injection-locked dividers present much less kickback

    than their static counterparts.

    The second divider is implemented as a static topology with

    current-mode logic (CML) structure, class-AB biasing, and in-

    ductive peaking (Fig. 6) [29]. Simulation shows that for input

    swing of 260 mV ( dBm, single-endedly), the lock range

    is approximately equal to 26 GHz. The peaking inductors only

    give a mild bandwidth boost and contribute negligible influence

    on the static dividers behavior. The prescaler is illus-trated in Fig. 7(a), which follows the design in [30]. Four

    cells are placed in cascade. This structure provides a simple yet

    robust operation. With the 4th control bit set to 1, the division

    range is given by .

    Different types of latches2 are employed to minimize its power

    consumption while achieving high speed. Here, we map the

    3-bit - output to the control bits so as to tune the

    divide modulus from 24 to 31 (the average divide ratio is about

    27.5). For completeness, we plot the cell in Fig. 7(b).

    Once again, class-AB biasing technique [29] is applied to the

    first cell to help driving large loading at higher speed (19.25

    GHz). A differential CML-to-CMOS converter is required be-tween the 2nd and the 3rd cells, which is illustrated in Fig. 7(c).

    Note that we take advantage of the available differential clocks

    to relax the heavy loading. That is, both of the pseudo-differen-

    tialinputs and inthe 3rdcellare usedtodrive two latches

    for each. In 65-nm CMOS technology, the converter presents a

    -dB bandwidth of 10.5 GHz while consuming only 2.2 mW

    of power.

    B. LNA and PA

    The LNA is realized as three identical gain stages [Fig. 8(a)].

    Here, each stage contains a cascode structure, and conjugate

    matching networks are placed between stages. The on-chip2CML and true-single-phase clock (TSPC).

    Fig. 8. (a) Low-noise amplifier, (b) improvement of double-shield ground.

    transmission line design is not trivial at such a high frequency.

    For example, coppers skin depth is equal to 0.25 m at 77

    GHz, whereas the thickness of M1 in 65-nm CMOS is only

    0.18 m. To prevent significant leakage to the substrate, we

    put two layers of metal as the ground plane. Here, M1 and

    M2 are shunt through vias to form a thicker ground plane

    with no penetrating slot [31]. As demonstrated in Fig. 8(b),

    the LNA gain and noise figure are improved by at least 2 to4 dB by using this double-layered ground. Also, and

    are laid out with shared junction [32] to minimize the parasitic

    capacitance of the internal node. The layout for and is

    illustrated in Fig. 8(a) as well. Note that if source degeneration

    were used, the gain would be degraded by 23 dB. Since the

    receivers noise figure is primarily determined by the mixer and

    IF amplifier, it is good to keep the LNA in high gain region.

    The PA design is depicted in Fig. 9(a). It is a 5-stage structure

    in cascade with conjugate matching in between. Each stage is

    made of a single-stage class-A amplifier. Here, to improve sta-

    bility, it is desirable to add local bypass, e.g., a capacitor, to the

    supply. However, this bypass capacitor can never be large (usu-

    ally 12 pF) since it has to accommodate limited space betweenstages. As a result, the bypass impedance raises up to a higher

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    LEEet al.: A FULLY-INTEGRATED 77-GHz FMCW RADAR TRANSCEIVER IN 65-nm CMOS TECHNOLOGY 2751

    Fig. 9. (a) Power amplifier, (b) impedance and of bypass network as afunction of frequency with parasitics considered.

    value at low frequencies, possibly introducing more noise cou-

    pling or even oscillation.

    To reduce the impedance and quality factor at low frequen-

    cies, we can introduce an additional - branch [33]. The

    overall impedance seen looking into the - - network

    is now given by

    (9)

    In our design, pF, pF, and ,

    arriving at a zero at 1.6 GHz and two poles at dc and 8.2 GHz,

    respectively. Similarly, the equivalent of this bypass network

    is defined as

    (10)

    which must be low enough for any frequency. However, (9) and

    (10) are over simplified as they contain no parasitics. Fig. 9(b)

    reveals the simulated results with parasitic inductance and resis-

    tance taken into account. Note that we can not use - solely,

    otherwise the PAs gain will be degraded significantly (owing to

    ). Simulation suggests that this PA presents a gain higher than

    13 dB. The degeneration transmission lines are used here to im-

    prove stability and wideband matching.

    C. Mixer, IF Amplifier, and - Modulator

    The mixer design is shown in Fig. 10(a). In order to conform

    to the 1.2-V supply and ensure abrupt switching on and

    , we separate the gain and switching stages [34], i.e., a tuned

    amplifier couples its output to the common-source node of the

    switching pair - . A single-balanced structure is used to

    reduce the LO port loading. Since IF is less than LO frequency

    by approximately 5 orders of magnitude, the LO feedthrough

    can easily be eliminated. Note that if a double-balanced mixer

    were used, the LO port would present capacitive loading twiceas large to the VCO and its buffer. Most RF current flows into

    Fig. 10. (a) Mixer, (b) IF amplifier, (c) 16-bit 6 -1 modulator.

    Fig. 11. (a) Die photograph, (b) testing setup.

    the switching pair - rather than the tail current , since

    the latter presents an output impedance much greater than the

    impedance seen upwards. Parasitic capacitance associated with

    node is absorbed as part of the matching network. The mixer

    gain is estimated to be 5 dB.

    The down-converted IF signal needs to be enlarged to at least

    5 mV before it can be processed by the ADC. The IF amplifier

    is composed of 3 differential pairs and an offset compensation

    unit loaded to the first stage, which could neutralize any possible

    offset up to 300 mV [Fig. 10(b)]. Although the offset cancella-

    tion in this prototype is designed for manual tuning,3 it could be

    easily modified as an automatic calibration scheme [35], [36].The IF amplifier is capable of providing 16-dB gain.

    The 16-bit - modulator is illustrated in Fig. 10(c).

    Adopting standard MASH 1-1-1 structure [37], this modulator

    is inherently stable. All the blocks are operated in pure digital

    mode. The 3-bit output (averagely equal to ) is pro-

    duced by the -times carry overflow of the first accumulator

    in every cycles. Note that the carries of the second and the

    third accumulators do not affect the output average value due

    to the differentiators . Integrated with modulation

    control logics, the adders, delay cells, and other digital blocks

    are synthesized by Design Compiler and are placed-and-routed

    3In real measurement, the observed offset is very small and we do not needto tune it out manually.

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    2752 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010

    Fig. 12. Spectra of 77-GHz synthesizer: (a) integer- , (b) fractional- op-eration. (c) Phase noise plots under integer- operation, (d) spread spectrumunder frequency modulation.

    by Astro [38]. Guard rings made of n-well and p diffusion

    layer are placed around the - modulator to isolate the

    created digital noise.

    V. EXPERIMENTALRESULTS

    The transceiver chip has been fabricated in 65-nm CMOS

    technology. Fig. 11(a) shows the die photo, which measures

    0.95 1.1 mm . The circuit (FPGA not included) consumes a

    total power of 243 mW, of which 73 mW dissipates in the fre-

    quency synthesizer, 115 mW in PA, 30 mW in LNA, and 25mW in the mixer and buffers. The testing setup is also shown

    in Fig. 11(b). An external PLL (CDCE62002) [39] provides the

    700 MHz reference clock, and an ADC (ADS7882) [39] digi-

    tizes the IF signal. Both of them can be further merged into the

    transceiver in future design. A low-cost FPGA evaluation board

    (Altera DE0 Board) [40] has been used for FFT calculation. The

    radar transceiver as well as individual building blocks are tested

    on a probe station. A fully-assembled module has also been im-

    plemented, whose link budget is degraded by about 12 dB due

    to bonding wire loss and mismatch loss especially at transmitter

    output. We here summarize the measurement results obtained

    from probing as follows.Fig. 12(a) and (b) reveal the output spectra of the 77-GHz

    synthesizer under integer- and fractional- operation, sug-

    gesting phase noise of and dBc/Hz at 1-MHz

    offset, respectively. The reference spurs are dBc and the

    fractional spurs dBc. Note that these spikes have little in-

    fluence on the radar performance, because the fractional spurs

    vary all the time due to the modulated carrier frequency. In other

    words, after averaging no stationary spur can be created to cause

    false alarm. Phase noise plots are also depicted in Fig. 12(c).

    Here, the phase noise of the full-rate clock is not directly avail-

    able due to our limited equipment [29]. We instead plot the

    phase noise of the divided-by-4 output along with that of the

    700-MHz reference. The 19-GHz output reveals phase noise ofdBc/Hz at 1-MHz offset, demonstrating that the first two

    Fig. 13. FMCW modulation profile and accuracy.

    Fig. 14. LNA measurement: (a) S-parameters, (b) noise figure.

    Fig. 15. PA measurement: (a) S-parameters, (b) large signal performance.

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    LEEet al.: A FULLY-INTEGRATED 77-GHz FMCW RADAR TRANSCEIVER IN 65-nm CMOS TECHNOLOGY 2753

    Fig. 16. (a) IF spectrum while detecting an object 102-m away, (b) link budget.

    TABLE IPERFORMANCESUMMARY

    divider stages contribute negligible noise. It also follows the ref-

    erence profile tightly until 100 kHz offset. The integrated jitter

    from 100 Hz to 1 GHz is equal to 293 fs. The output spec-trum under modulation is shown in Fig. 12(d), which presents a

    spreading range of 700 MHz.

    By using a standalone synthesizer, we can even record the tri-

    angular frequency profile as shown in Fig. 13. The root-mean-

    square (rms) frequency error including the turn-around points

    is less than 300 kHz, which is superior to that of conventional

    DDFS-based transceivers by at least 1 order [27]. Note that

    the standalone synthesizer provides slightly lower modulation

    range , which is approximately 500 MHz.

    To verify the performance of each block, we have also tested

    the LNA and PA individually. Here, both small- and large-signal

    measurements are conducted. The LNA achieves 17.5-dB gain,

    7.4-dB NF, -dBm , and -dBm at 77 GHz.Fig. 14 depicts the LNA S-parameter and NF around the band

    of interest. The PA reveals a peak gain of 13.7 dB, with a -dB

    bandwidth of 21.5 GHz, of 6.7 dBm, of 10.5 dBm

    and maximum PAE of 8.4% (Fig. 15).Fig. 16(a) shows the IF spectrum while detecting an object

    about 0.4 0.6 m at 102 meters away. We can see an IF line of

    dBm at about 635 kHz. Note that the undesired spur caused

    by stepping does not appear, since we choose a low IF and a

    high modulating resolution. It serves as another advantage as

    compared with other FMCW designs [27]. The link budget is il-

    lustrated in Fig. 16(b). For a mid-size car, the longest detectable

    distance is about 110 meters, which matches our measurement

    closely.Furthermore, the noise floorat the IF isabout dBm,

    which implies that the total NF of the receiver is about 30 dB.

    We have also verified the accuracy of this radar system, and

    shown in Fig. 17(a) and (b) are the results for distance and

    speed. A picture of this out-door measurement is also shownin Fig. 17(c). A mid-size car with cross-section area of 30 m

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    2754 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010

    Fig. 17. Accuracy for (a) distance, (b) velocity measurements, (c) picture ofmeasurement setup.

    Fig. 18. (a) 8 2 8 patch array antenna, (b) its gain and bandwidth, (c) radiationpattern E- and H-planes.

    serves as a target, and accurate speed meters as well as long-

    range measuring tapes are used. The maximum detectable is

    106 meters. Note that the rms error is less than the resolution inboth cases here, demonstrating the accuracy of this work. Table I

    summarizes the overall performance, and compares this work

    with some other FMCW radar transceivers and front-ends pre-

    viously published. Other 77-GHz circuits such as [42] and [43]

    can also be found in the literature.

    VI. FUTUREWORK

    The antenna is of great importance in a radar system and is

    worthy of further modification. As discussed in Section I, in

    order to reach a long distance, we need high-gain antennas such

    as horn or dish to concentrate the radiation energy. In such cases,

    signal at 77 GHz must be transformed from coplanar wave-guide to rectangular waveguide mode, and vice versa. All of the

    Fig. 19. Photos of the 77-GHz radar system with integrated transceiver (chip)and on-board antennas.

    mm-wave components (antennas, adaptors, etc) are very costly

    because they require delicate manufacture techniques and pre-

    cise mechanical placement.

    A low-cost solution may be found if we use a patch antenna

    array. It is well known that a large antenna array could get a

    high gain by focusing the radiation energy. As demonstrated

    in Fig. 18, we design an 8 8 patch array on a commer-

    cially-available PC board, RO4003C [41], which occupies an

    area of approximately 2.3 2.5 cm on a board with .

    Tree-structure corporate feeding paths guarantee that the overall

    radiation is constructive. Using 8 8 elements, we can achieve

    -dBi gain and -GHz bandwidth [Fig. 18(b)], quite

    close to the requirement of automotive FMCW radar systems.

    The radiation patterns for E- and H-planes are also shown in

    Fig. 18(c), revealing beamwidth of 10 and 9 , respectively. A

    radar module incorporates 8 8 patch antenna arrays has been

    demonstrated in Fig. 19, which achieves a ranging distance of

    at least 40 meters in preliminary test. It is absolutely possible

    to extend this distance to over 100 meters by modifying the RF

    front-ends as well as the DSP baseband.

    VII. CONCLUSION

    A fully-integrated 77-GHz FMCW radar transceiver has beenproposed in this paper. Utilizing fractional- synthesizer as an

    FMCW engine, we substantially reduce the complexity of the

    circuit and board designs. Significant power and area can be

    saved by this architecture, leading to a low-cost solution. Mil-

    limeter-wave front-end realized in CMOS technology has been

    demonstrated as well. With baseband processors and high-gain

    antennas included, this work provides a complete realization ex-

    ample, which reveals promising potential for future automotive

    applications.

    ACKNOWLEDGMENT

    The authors thank the TSMC University Shuttle Program forchip fabrication.

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    LEEet al.: A FULLY-INTEGRATED 77-GHz FMCW RADAR TRANSCEIVER IN 65-nm CMOS TECHNOLOGY 2755

    REFERENCES

    [1] V. Jain et al., A 2229-GHz UWB pulse-radar receiver front-endin 0.18- m CMOS, IEEE Trans. Microw. Theory Tech. , vol. 57, pp.19031914, Aug. 2009.

    [2] R. Kulke et al., 24 GHz radar sensor integrates patch antenna and

    frontend module in single multilayer LTCC substrate, in Proc. Eur.Microelectronics and Packaging Con f., Jun. 2005, pp. 239242.

    [3] T. H. Hoet al., A compact 24 GHz radar sensor for vehicle sideway-looking applications, in Proc. Eur. Microwave Conf., Oct. 2005, pp.351354.

    [4] M. Schneider, Automotive radarStatus andtrends, in Proc. GermanMicrowave Conf., Apr. 2005, pp. 144147.

    [5] J. Haschet al., 77 GHz radar transceiver with dual integrated antennaelements, in Proc. German Microwave Conf., Dec. 2010,pp. 280283.

    [6] H. P. Forstner etal., A 77 GHz 4-channelautomotive radartransceiverin SiGe, in RFIC Symp. Digest, Jun. 2008, pp. 233236.

    [7] Y. Kawanoet al., A 77 GHz transceiver in 90 nm CMOS, in IEEEInt. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2009,pp. 310311.

    [8] E. Laskin et al., Nanoscale CMOS transceiver design in the90170-GHz range, IEEE Trans. Microw. Theory Tech., vol. 57, pp.34773490, Dec. 2009.

    [9] D. Salleet al., A fully integrated 77 GHz FMCW radar transmitterusing a fractional-N frequency synthesizer, in Proc. Eur. Radar Conf.(EuRAD), Sept. 2009, pp. 149152.

    [10] M. I. Skolnik, Introduction to Radar Systems. New York: McGrawHill, 2001.

    [11] S. T. Nicolson et al., Single-chip W-band SiGe HBT transceiversand receivers for doppler radar and millimeter-wave imaging, IEEE

    J. Solid-State Circuits, vol. 43, pp. 22062217, Oct. 2008.[12] Bluetooth [Online]. Available: http://www.bluetooth.com/Eng-

    lish/Pages/default.aspx[13] D. Chowdhuryet al., A single-chip highly linear 2.4 GHz 30 dBm

    power amplifier in 90 nm CMOS, in IEEE Int. Solid-State CircuitsConf. (ISSCC) Dig. Tech. Papers, Feb. 2009, pp. 378379.

    [14] P. Haldiet al., A 5.8 GHz 1 V linear power amplifier using a novelon-chip transformer power combiner in standard 90 nm CMOS,IEEE

    J. Solid-State Circuits, vol. 43, no. 5, pp. 10541063, May 2008.

    [15] A. Komijani et al., A 24-GHz,

    -dBm fully-integrated poweramplifier in 0.18 m CMOS,IEEE J. Solid-State Circuits, vol. 40,no. 9, pp. 19011908, Sep. 2005.

    [16] H. Shigematsuet al., Millimeter-wave CMOS circuit design, IEEETrans. Microw. Theory Tech., vol. 53, pp. 472477, Feb. 2005.

    [17] T. LaRoccaet al., 60 GHz CMOS amplifiers using transformer-cou-pling and artificial dielectric differential transmission linesfor compactdesign, IEEE J. Solid-State Circuits, vol. 44, no. 5, pp. 14251435,May 2009.

    [18] T. Yao etal., Algorithmicdesignof CMOS LNAs andPAs for60-GHzradio,IEEE J. Solid-State Circuits, vol. 42,no. 5, pp. 10441057, May2007.

    [19] T. Suzukiet al., 60 and 77 GHz power amplifiers in standard 90 nmCMOS, in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech.Papers, Feb. 2008, pp. 562563.

    [20] M. Seoet al., A 1.1 V 150 GHz amplifier with 8 dB gain and dBmsaturated output power in standard digital 65 nm CMOS using dummy-

    prefilled microstriplines, inInt.Solid-State Circuits Conf. Digest, Feb.2009, pp. 484485.

    [21] D. K. Shaefferet al., A 1.5-V, 1.5-GHz CMOS low noise amplifier,IEEE J. Solid-State Circuits, vol. 32, no. 5, pp. 745759, May 1997.

    [22] A. Ismail et al., A 310-GHz low-noise amplifier with widebandLC-ladder matching network, IEEE J. Solid-State Circuits, vol. 39,no. 12, pp. 22692277, Dec. 2004.

    [23] E. Adabiet al., 30 GHz CMOS low noise amplifier, in RFIC Symp.Dig., Jun. 2007, pp. 625628.

    [24] M. A. T. Sanduleanu et al., 3134 GHz low noise amplifier withon-chip microstrip lines and inter-stage matching in 90-nm baselineCMOS, inRFIC Symp. Dig., Jun. 2006, pp. 143146.

    [25] C. H. Doanet al., Millimeter-wave CMOS design, IEEE J. Solid-State Circuits, vol. 40, no. 1, pp. 144155, Jan. 2005.

    [26] A. Tomkinset al., A passive W-band imager in 65 nm bulk CMOS,inIEEE CSICS Digest, Oct. 2009, pp. 9194.

    [27] T. Mitomo et al., A 77 GHz 90 nm CMOS transceiver for FMCWradar applications, in Symp. VLSI Circuits Dig. Tech. Papers, Jun.2009, pp. 246247.

    [28] M. Yoshiokaet al., A 10 b 50 MS/s 820 W SAR ADC with on-chipdigital calibration, in IEEE Int. Solid-State Circuits Conf. (ISSCC)

    Dig. Tech. Papers, Feb. 2010, pp. 384385.[29] J. Leeet al., A 75-GHz phase-locked loop in 90-nm CMOS tech-

    nique,IEEE J. Solid-State Circuits, vol. 43,pp. 14141426, Jun. 2008.[30] C. Vaucher etal., A wide-bandtuningsystem for fullyintegrated satel-

    lite receivers,IEEE J. Solid-State Circuits, vol. 33,no. 7, pp.987998,Jul. 1998.

    [31] A. M. Manganet al., De-embedding transmission line measurementsfor accurate modelling of IC designs,IEEE Trans. Electron. Dev., vol.53, pp. 235241, Jan. 2006.

    [32] B. Heydariet al., A 60-GHz 90-nm CMOS cascode amplifier with in-terstage matching, in Proc. Eur. Microwave Integrated Circuit Conf.,Oct. 2007, pp. 8891.

    [33] A. Komijani and A. Hajimiri, A wideband 77 GHz, 17.5 dBm poweramplifier in silicon, IEEE J. Solid-State Circuits, vol. 41, no. 8, pp.17491756, Aug. 2006.

    [34] B. Razavi, A millimeter-wave CMOS heterodyne receiver withon-chip LO and divider, IEEE J. Solid-State Circuits, vol. 43, no. 2,pp. 477485, Feb. 2008.

    [35] S. Galalet al., 10-Gb/s limiting amplifier and laser/modulator driverin 0.18 m CMOS technology,IEEE J. Solid-State Circuits, vol. 38,no. 12, pp. 21382146, Dec. 2003.

    [36] B. Afsharet al., A robust 24 mW 60 GHz receiver in 90 nm standardCMOS, in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech.

    Papers, Feb. 2008, pp. 182183.[37] B. Miller and R. Conley, A multiple modulator fractional divider, in

    Proc. 44th Annu. Frequency Control Symp., May 1990, pp. 559568.[38] Synopsys [Online]. Available: http://www.synopsys.com[39] Texas Instruments [Online]. Available: http://www.TI.com[40] Altera [Online]. Available: http://www.altera.com[41] Rogers RO4003C [Online]. Available: http://www.rogerscorp.com/

    acm/products/16/RO4000-Series-High-Frequency-Circuit-Mate-rials-Woven-glass-reinforced-ceramic-filled-thermoset.aspx

    [42] A. Babakhaniet al., A 77-GHz phased-array transceiver with on-chipantennas in silicon: Receiver and antennas, IEEE J. Solid-State Cir-cuits, pp. 27952806, Dec. 2006.

    [43] A. Natarajanet al., A 77-GHz phased-array transceiver with on-chipantennas in silicon: Transmitter and local LO-path phase shifting,

    IEEE J. Solid-State Circuits, pp. 28072819, Dec. 2006.

    Jri Lee (S03M04) received the B.Sc. degree inelectrical engineering from National Taiwan Univer-sity (NTU),Taipei, Taiwan,in 1995,and theM.S.andPh.D. degrees in electrical engineering from the Uni-versity of California, Los Angeles (UCLA), both in2003.

    After two years of military service (19951997),

    he was with Academia Sinica, Taipei, Taiwan from1997 to 1998, and subsequently Intel Corporationfrom 2000 to 2002. He joined National TaiwanUniversity (NTU) since 2004, where he is currently

    an Associate Professor of electrical engineering. His current research interestsinclude high-speed wireless and wireline transceivers, phase-locked loops, anddata converters.

    Prof. Lee received the Beatrice Winner Award for Editorial Excellence at the2007 ISSCC, the Takuo Sugano Award for Outstanding Far-East Paper at the2008 ISSCC, the best technical paper award from Y. Z. Hsu memorial foun-dation in 2008, the T. Y. Wu memorial award from national science council(NSC), Taiwan in 2008, the Young Scientist Research Award from AcademiaSinica in 2009, and the Outstanding Young Electrical Engineer award in 2009.He has also received NTU outstanding teaching award in 2007, 2008, and 2009.He has served as a Guest Editor of the IEEE Journal of Solid-State Circuits in2008 and a tutorial Lecturer at the 2009 ISSCC. He is now serving in the Tech-

    nical Program Committees of the International Solid-State Circuits Conference(ISSCC), Symposium on VLSI Circuits, and Asian Solid-State Circuits Confer-ence (A-SSCC).

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    2756 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 12, DECEMBER 2010

    Yi-An Liwas born in Taichung, Taiwan, in 1986. Hereceived the B.S. and M.S. degrees in electrical en-gineering from National Taiwan University, Taipei,Taiwan, in 2008 and 2010, respectively.

    His research interests include phase-locked loopsand frequency synthesizers.

    Meng-Hsiung Hung was born in Tainan, Taiwan,in 1986. He received the B.S. degree in electricalengineering from National Tsing-Hua University,Hsinchu, Taiwan, in 2008, and the M.S. degreein electrical engineering from National TaiwanUniversity, Taipei, Taiwan, in 2010.

    His research interests focus on millimeter-wavefront-end circuits including antenna.

    Shih-Jou Huang was born in Tainan, Taiwan, in1986. He received the B.S. degree in electricalengineering from National Tsing-Hua University,Hsinchu, Taiwan, in 2008. He is currently workingtoward the Ph.D. degree at National Taiwan Univer-sity.

    His research interests focus on millimeter-wavewireless transceivers.