JEOL JBX-8100FS E-Beam Writer

Refer to the  page for information on materials compatible with this tool.Material and Process CompatibilityEquipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See   for more info.Problem Reporting Guide

Status UP

Issue Date and Description

Estimated Fix Date and Comment

2, 10, 30, and 100 nA calibrations complete on . 100 nA allowable distortion is set higher than normal to avoid error, this 23 Nov 2021may lead to slightly larger stitching errors (~<100 nm?) than normal. Will work with JEOL next week to resolve. Any high current writes where stitching is critical (<100 nm) should use 30 nA instead in the meantime.

Responding Staff

iLab Name JEOL JBX-8100FS E-Beam Writer

iLab Kiosk BRK Lithography Core

FIC Shared

Owner  Bill Rowe and Justin Wirth ( , )Email Chat

Location BRK 2100P

Max. Wafer 6"/150 mm

Info Links |   | SOP Internal Staff

1 Overview1.1 General Description

1.1.1 Main Features1.2 Specifications

1.2.1 Write Modes Specifications1.2.2 Features

2 Sample Requirements and Preparation3 Standard Operating Procedure4 Process Library

4.1 8100calculator.xlsx5 References

5.1 BNC Staff Presentations - Internal Resources5.2 Purdue's JBX-8100FS, from JEOL - Internal Resources5.3 JEOL Manuals - Internal Resources5.4 General References5.5 Relevant Literature5.6 Partnership Opportunities - Alternate EBL Resists/Processes

Overview

General DescriptionThe new JEOL JBX-8100FS series spot beam lithography system is designed for higher throughput and lower operating costs. The JBX-8100FS writes ultrafine patterns at a faster rate of speed while minimizing idle time, especially during the exposure process, thus increasing throughput. This new, high precision compact e-beam tool is suitable for a wide range of applications from research to production, while its small footprint and low power consumption reduce cost of ownership.

Main Features

Small footprintThe area required for the standard system is 4.9 m (W) x 3.7 m (D) x 2.6 m (H), much smaller than the conventional systems.Low power consumptionPower needed for normal operation is approximately 3 kVA, reduced to 1/3 of the conventional systems.High throughputThe system has two exposure modes, high resolution and high throughput modes, supporting different types of patterning from ultra fine processing to small to mid size production. It has minimized the idle time during exposure while increasing the maximum scanning speed by 1.25 to 2.5 times to 125 MHz (the world’s highest level) for high speed writing.VersionThe JBX-8100FS is available in 2 versions: G1 (entry model) and G2 (full option model). Optional accessories can be added to the G1 model as needed.New FunctionsAn optional optical microscope is available to enable examination of patterns on the sample without exposing resist to light. A signal tower is provided as standard for visual monitoring of system operation.Laser positioning resolutionStage positions are measured and controlled in 0.6 nm steps as standard, and in 0.15 nm steps with an optional upgrade.System controlVersatile Linux® operating system combined with a new graphic user interface provides ease in operation. The data preparation program supports both Linux® and Windows®.

SpecificationsThe JBX-8100FS is an electron-beam lithography system designed to write nanometer to submicron sized patterns using a spot beam.

Write Modes Specifications

Note: High Throughput will be almost exclusively used, contact  if you think you need HR mode. Bill Rowe

High Throughput(HT/4th Lens/EOS 3)

High Resolution(HR/5th Lens/EOS 6)

Max. Main Field Size 1000 m x 1000 m 100 m x 100 m

Max. Sub Field Size 8 m x 8 m 0.8 m x 0.8 m

Min. Beam Step Size 0.5 nm 0.05 nm

Min. Shape Placement Step 1 nm 0.1 nm

Overlay Accuracy ±20 nm ±9 nm

Field Stitching Accuracy ±20 nm ±9 nm

Min. Beam Diameter 5.1 nm 1.8 nm

Min. Line Width (Field Center) <12 nm <8 nm

Available Currents (at BNC) 2, 10, 30, 100 nA (200 nA available as a test file) 0.5 nA

Features

ZrO/W emitter 4-stage electron-beam focusing system

Accelerating voltage: 100 kVWriting: Vector scan (within a subfield) and Step-and-repeat (electronically between subfields and physically between fields).Beam scanning speed: 125 MHzScan speed modulation: 256 rank / 0.05 nsec resolutionMainfield/Positioning DAC: 20-bitSubfield/Scanning DAC: 14-bitFocus range: ±100 mMax wafer size: 200 mmMax writing area: 150 mm x 150 mmMovable area: 190 mm x 170 mmStage positioning resolution: /1024 (~0.6 nm)Beam current stability: 0.2% pp/hrBeam position stability: 60 nm pp/hr (HT) / 10 nm pp/hr (HR)Substrate thickness compatibility: 225 m to 1.3 mmDeflection amplitude correction and objective-lens focus correction, using the substrate height detectorSmallest features size: 4.2 nm (demonstrated by JEOL in ).Development of the JBX-8100FS Electron Beam Lithography System

The JBX-8100FS is mounted on a   with   antivibration supports. Transmission is minimized at high frequencies, and TMC Quiet Island STACIS IIIunlike older anti-vibration supports, is reduced at low (<10 Hz) frequencies as well.

Sample Requirements and PreparationSamples need to be free of outgassing contaminants, and PR must be properly baked to avoid contamination of the column

Standard Operating ProcedureLogin to Confluence to view the SOP, or email  if you are external to Purdue and interested:jcwirth@purdue.edu

SOP - JEOL JBX-8100FS E-Beam Writer

Process LibraryCurrently empty, please contribute your processes here.

8100calculator.xlsx

Use this Excel file to assist with picking currents, shot pitches, ensuring you're within the clock headroom (<125 MHz, >8ns), to roughly estimate your write time based on the current/dose/pattern area, and track alignment mark locations.

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8100calculator.xlsx

iLab Kiosk eLog: Submit eLog: View/Edit Report Problem

References

BNC Staff Presentations - Internal Resources

J. C. Wirth, "Introduction to the JEOL JBX-8100FS", BNC Faculty Seminar, 2/08/2018 (Updated 10/25/2018).

Purdue's JBX-8100FS, from JEOL - Internal ResourcesJBX-8100FS Performance Test Report - Purdue

Training for JBX-8100FS - Purdue

STACIS III Anti-vibration Platform for JBX-8100FS IOC report - Purdue

Beam Diameter of JBX-8100FS - Purdue

BEAMER Manual

JEOL Manuals - Internal Resources

General ReferencesJEOL

JEOL USA Semiconductor Equipment Documents - Electron Beam Lithography

Yukinori Aida, "Development of the JBX-8100FS Electron Beam Lithography System", JEOL News 53(1), 59 (2018).

( )Web Version

Georgia Tech

100 kV Electron Beam Lithography System: JBX-9300FS

"JEOL JBX-9300FS Electron Beam Lithography System Training", Georgia Tech

Yale

YINQE EBL - Manuals and Documentation

YINQE EBL - Software Downloads

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YINQE EBL - Electron-Beam Lithography Training

University of Washington

Run Time Estimator

Schedule File Compiling

Cornell

JEOL 6300

JEOL 9500

JEOL Alignment Marks

Shot Pitch and Write Time Calculator - XLS

University of Michigan

JEOL JBX-6300FS

University of Minnesota

Vistec EBPG5000 (with good process resources)

Electron Properties

Accelerating Voltage Calculator

Properties of Electrons

Electron Beam properties

Relevant Literature"Quality control of JEOL JBX-9500FSZ e-beam lithography system in a multi-user laboratory", T. Greibe et al, Microelectronic Engineering 155, 25-28 (2016).

"5-nm-Order Electron-Beam Lithography for Nanodevice Fabrication," K. Yamazaki and H. Namatsu, japanese Journal of Applied Physics 43, 3767 (2004).This paper explains why the measured beam size on the knife edge mark (AE mark) is so much larger than the actual beam size. It further discusses some ultrasmall patterns in HSQ

Partnership Opportunities - Alternate EBL Resists/ProcessesContact Justin Wirth if you are interested in partnering with BNC to evaluate these resists and develop standard processes of broad usefulness to the BNC research community. 

AZ nLOF 2000

AllResist

AR-P 6200 and AR-N 7520 are of particular interest:

FAQ: E-Beam Resists

AR-P 6200:

Nanostructures

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