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    UNIVERSITY OF CINCINNATI

    Date: ___________________

    I, _________________________________________________________,

    hereby submit this work as part of the requirements for the degree of:

    in:

    It is entitled :

    This work and its defense approved by:

    Chair: _______________________________ _______________________________

    _______________________________ _______________________________ _______________________________

    August 5, 2005

    Mohit Jain

    Masters of Science

    Electrical Engineering

    Design Procedures for Sigma Delta Modulators

    Dr. Joseph H. Nevin

    Dr. Carla Purdy

    Dr. Fred R. Beyette

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    Design Procedures for Sigma Delta Modulators

    A thesis submitted to the

    Division of Research and Advanced Studies,University of Cincinnati

    in partial fulfillment of the requirements for the degree of

    MASTER OF SCIENCE(Electrical Engineering)

    in the

    Department of Electrical and Computer Engineering and Computer Science,College of Engineering, University of Cincinnati

    August 2005

    by

    Mohit JainB.E (Electronics and Instrumentation),

    Institute of Engineering & Technology, Devi Ahilya University, Indore, India,

    June 2002

    Thesis Advisor and Committee Chair: Dr Joseph H. Nevin

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    Abstract

    With the emergence of complex, non-linear mixed signal systems it becomes important to devisestrategies to model them accurately at the system level. Though advanced CAD tools are

    available for digital design, analog design is still a kind of empirical art which mainly involves

    selection of architecture, determining specifications for individual analog blocks and

    implementation of the system with minimization of non-idealities.

    For a long time, most of the building block specifications and non-idealities were explored at the

    transistor level which involved a lot of time for each run and multiple runs to achieve the

    required specifications. To explore a new method for modeling of a mixed signal circuit is the

    main point of investigation of this thesis. In order to explore the new method of modeling, a

    Sigma-Delta A/D converter is considered. These converters are gaining popularity as they are

    insensitive to circuit imperfections and component mismatch. Design of Switched-Capacitor

    (SC) Sigma-Delta modulators requiring optimization of a large set of parameters has been

    explored and a top-down method for design of such systems is presented. The research work

    deals in detail with the modeling of the converter, choosing the appropriate analog blocks at the

    transistor level and various trade offs in implementation of the same.

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    Dedicated to My Parents

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    Acknowledgements

    I would like to extend my heartfelt gratitude to my thesis advisor Dr. Joseph H. Nevin for his

    continuous guidance and encouragement in getting the best out of this research work. It would

    not have been possible to move ahead without his brilliant insight in analog circuit design always

    stayed as my source of motivation to delve deeper in to the subject.

    I would also like to thank Dr. Carla Purdy and Dr. Fred R. Beyette Jr. for being on the technical

    committee for my thesis defense and for providing critical suggestions to make this document

    better. I am very thankful to my lab mates Sanjith, Lakshminarayanan and Ravikanth, for their

    constant inputs to problems encountered during this work.

    I am very thankful to my friends in Cincinnati especially Aditya, Kalyan, Hetal, Pranay, Pratima,

    Rajasundaram, Rashmi, Ratan, Vasant, Vishal and Vishesh for their support all through the

    Masters program and making my stay at Cincinnati a memorable one.

    Last but not the least; I would like to thank my parents and my sister for their love, constant

    support and encouragement. I am very grateful to my parents who have been a source of

    inspiration for me and without their sacrifices and efforts this work would have been impossible.

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    TABLE OF CONTENTS

    1. Introduction............................................................................................................................. 11.1. Introduction..................................................................................................................... 11.2. Research Motivation and Objective ................................................................................ 21.3. Thesis Outline ................................................................................................................. 3

    2. Fundamentals of Sigma-Delta Data Converters ..................................................................... 42.1. Introduction..................................................................................................................... 42.2. Quantitative analysis of Analog to Digital Conversion.................................................. 42.3. Limitations of Nyquist-rate ADC ................................................................................... 52.4. Oversampling as Compared to Nyquist rate sampling ................................................... 62.5. Sigma Delta Modulators and Noise Shaping.................................................................. 7

    2.5.1. First and Second order Sigma Delta Modulator ..................................................... 92.6. Architectures of Sigma Delta Modulators .................................................................... 12

    2.6.1. Single loop (Low and High order) Modulators..................................................... 122.6.2. Multi-stage (Cascaded) Modulators...................................................................... 132.6.3. Multi-bit Modulators............................................................................................. 14

    2.7. Non idealities in SDM .................................................................................................. 152.7.1. Circuit Noise ......................................................................................................... 162.7.2. Operational Amplifier Non- idealities ................................................................... 17

    2.7.2.1. Limited DC Gain........................................................................................... 172.7.2.2. Limited Bandwidth and Slew Rate ............................................................... 182.7.2.3. Saturation...................................................................................................... 18

    2.7.3. Comparator Offset and Hysteresis ........................................................................ 183. System Level (Behavioral) Modeling of ? ? Modulator ...................................................... 20

    3.1. Introduction................................................................................................................... 203.2. Modeling Approaches................................................................................................... 213.3. Design Methodology..................................................................................................... 23

    3.3.1. Topology Selection: .............................................................................................. 233.3.2. Signal Scaling ....................................................................................................... 263.3.3. Model for switching noise .................................................................................... 273.3.4. Model for op-amp noise ........................................................................................ 293.3.5. Model for limited DC gain.................................................................................... 303.3.6. Model for limited BW and SR.............................................................................. 31

    4. Circuit Design and Details .................................................................................................... 324.1. Introduction................................................................................................................... 324.2. Topology selection........................................................................................................ 324.3. Integrator design ........................................................................................................... 35

    4.3.1. Clock generator..................................................................................................... 384.3.2. Fully Differential Folded-Cascode Op Amp......................................................... 39

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    4.3.3. Bias circuit ............................................................................................................ 414.3.4. Common-Mode Feedback Circuit......................................................................... 44

    4.4. Regenerative Track and Latch Comparator design....................................................... 454.5. Simulation..................................................................................................................... 47

    5. Conclusion ............................................................................................................................ 51

    APPENDIX A........................................................................................................................... 53APPENDIX B........................................................................................................................... 55BIBLIOGRAPHY......................................................................................................................... 57

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    LIST OF TABLES

    Table 3.1: Comparison of several modeling techniques............................................................... 22Table 4.1: Transistor sizes for Folded Cascode Op Amp ............................................................. 40Table 4.2: Transistor W/L ratios for Bias Circuit (R B = 3k) ........................................................ 43

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    LIST OF FIGURES

    Figure 2.1: Quantization noise PSD for Nyquist rate and Oversampled converters ...................... 7Figure 2.2: Block diagram of Sigma Delta Modulator ................................................................... 8Figure 2.3: Linearized model of a Sigma Delta Modulator ............................................................ 8Figure 2.4: First order Sigma Delta Modulator .............................................................................. 9Figure 2.5: Second order Sigma Delta Modulator ........................................................................ 10Figure 2.6: Magnitude vs Frequency plot for first, and higher order ? ? modulators .................. 11Figure 2.7: Multi-stage (Cascaded) ? ? modulator ....................................................................... 14Figure 3.1: Theoretical SNR of a (1 z -1 )n modulator ................................................................. 24

    Figure 3.2: Maximum SNR achievable by modulators of order n with coincident zeroes........... 25Figure 3.3: Second order sigma-delta modulator using Simulink ................................................ 25Figure 3.4: Effect of scaling on integrator outputs ....................................................................... 26Figure 3.5: Simulink model of Switching Noise .......................................................................... 28Figure 3.6: Effect of kT/C Noise on PSD of ideal sign wave ....................................................... 29Figure 3.7: Model for op-amp noise ............................................................................................. 29Figure 3.8; Model for limited op-amp gain .................................................................................. 30Figure 3.9: Effect of gain factor on SNR...................................................................................... 30Figure 3.10: Op-Amp flow chart .................................................................................................. 31Figure 4.1: Modified second order modulator architecture .......................................................... 33Figure 4.2: Variation of SNR with a1 and a2 ............................................................................... 34

    Figure 4.3: Output density at Integrator 1 and 2 for a1 = 0.5 and a2 varying from 0.1 to 0.9...... 34Figure 4.4: Output density at Integrator 1 and 2 for a1 = 0.4 and a2 varying from 0.1 to 0.9...... 35Figure 4.5: Parasitic insensitive switched-capacitor integrator ................................................. 36Figure 4.6: Two phase non-overlapping clocking scheme ........................................................... 37Figure 4.7: Fully differential implementation of switched capacitor integrator........................... 38Figure 4.8: Schematic for non-overlapping clock generation....................................................... 38Figure 4.9: Fully differential folded-cascode Op Amp................................................................. 40Figure 4.10: Conventional cascode mirror and Wide-swing cascode current mirror ................... 42Figure 4.11: Bias Circuit............................................................................................................... 43Figure 4.12: Switched capacitor common-mode feedback (CMFB) circuit................................. 45Figure 4.13: Regenerative feedback comparator .......................................................................... 47

    Figure 4.14: AC analysis of folded cascode Op Amp showing gain and phase margin............... 49Figure 4.15: Comparator Output .................................................................................................. 49Figure 4.16: FFT (2 14 ) magnitude plot for sigma-delta modulator output.................................... 50Figure 4.17: PSD plot for sigma-delta modulator output ............................................................. 50

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    1. Introduction

    1.1. Introduction

    The emergence of powerful digital signal processing for telecommunication and multimedia

    applications implemented in CMOS VLSI technology creates the need for high- resolution

    analog-to-digital converters that can be integrated in fabrication technologies optimized for

    digital circuits and systems. However, the same scaling of VLSI technology that makes possible

    the continuing dramatic improvements in digital signal processor performance also severely

    constrains the dynamic range available for implementing the interfaces between the digital and

    analog representation of signals.

    Conventional converters are becoming increasingly difficult to implement as they need precise

    analog components in the ir filters and conversion circuits and such conversion circuits can be

    very vulnerable to noise and interference. Oversampling converters on the other hand make

    extensive use of digital signal processing, with the fact that fine- line VLSI is better suited for

    providing fast digital circuits than for providing precise analog circuits.

    Oversampled A/D converters based on delta-sigma modulation combine sampling at rates well

    above the Nyquist rate with negative feedback and digital filtering in order to exchange

    resolution in time for that in amplitude. These converters are especially insensitive to circuit

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    imperfections and component mismatch, and therefore provide a means of exploiting the

    enhanced density and speed of scaled digital VLSI circuits so as to avoid the difficulty of

    implementing complex analog circuit functions within a limited analog dynamic range.

    1.2. Research Motivation and Objective

    Choosing the specifications for an analog circuit for given design objectives is potentially a very

    complicated and time consuming process. This task is further made difficult by the fact that the

    number of specifications to deal with is usually very large, and varies over wide ranges from one

    application to another.

    Design of an analog system primarily consists of three obstacles: [1]

    Selection of architecture.

    Determining the specifications of the analog building blocks necessary to implement the

    chosen architecture.

    Minimization of the effects of circuit non- idealities.

    For a long time, most of the building block specifications and non-idealities were explored at the

    transistor level. This required simulation over the full range of these variations which took

    multiple simulations even for single architectures. With this method, the entire procedure must

    be carried out for each of the architectures selected, which accounts for a lot of time too.

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    With the constant changes in technology, it is more amenable to consider a design process that is

    independent of technology. In present day System-on Chip design there is an increasing demand

    for systematic top-down design methodology. This methodology enables the designer to choose

    the right parameters for the individual building blocks constituting the system, starting from the

    system specifications.

    In the design of high-resolution Switched-Capacitor (SC) Sigma-Delta modulators we typically

    have to optimize a large set of parameters, including the performance of the building blocks, in

    order to achieve the desired signal-to-noise ratio. This work aims to suggest a designmethodology which the designer can use to tackle these large parameters.

    1.3. Thesis Outline

    Chapter 2 discusses the concepts and architecture of Sigma-Delta modulators long with a brief

    introduction to other conversion methods. This chapter further explores various noise sources

    that are encountered in practical implementation of the Sigma-Delta modulators and their effect

    on the performance. Chapter 3 deals with various design methodologies that currently exist and

    proposes Simulink models for modeling of electronic systems. The chapter then extends to

    derive the Simulink models for sigma-delta modulators. Chapter 4 presents circuit design issues

    of various building blocks for these modulators and aims at designing a sigma-delta modulator

    for prescribed performance using the methodology developed in previous chapters. A conclusion

    chapter gives some discussion on the future work.

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    2. Fundamentals of Sigma-Delta Data Converters

    2.1. Introduction

    Analog-to-digital interfaces are becoming increasingly important as translators between the real

    analog world and efficient digital processing systems. A/D converters have existed for along

    time and a number of implementation techniques for them have been developed, but in the recent

    times sigma-delta modulators have gained popularity. This chapter examines what makes sigma-

    delta modulators different from other conversion techniques. Merits and de-merits of the

    different topologies and techniques used for high performance sigma-delta modulators are also

    discussed. The chapter ends with a discussion of various non-idealities encountered in practical

    implementation of the modulator which degrade the modulator performance.

    2.2. Quantitative analysis of Analog to Digital Conversion

    Analog to Digital conversion of a signal requires two operations, namely Sampling and

    Quantization. In the sampling process a continuous time signal is sampled at uniformly spaced

    times intervals (T s). The signal can be reconstructed back to the continuous time provided the

    sampling frequency (f s) is at least twice the bandwidth of the signal (f b) as per Nyquist sampling

    theorem.

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    Quantization refers to the process of mapping an infinite number of input amplitude values to a

    finite number of output amplitude values. Thus Quantization error refers to the difference

    between the original analog amplitude and the quantized digital amplitude. The quantizer in any

    ADC is a non- linear system. To make its analysis tractable we can linearize it by modeling it as a

    noise source e[n] which is added to sampled signal x[n], to produce the quantized output signal

    y[n], i.e.

    y[n] = x[n] + e[n] Equation 2-1

    If x[n] is active, e[n] can be approximated as an independent random number uniformly

    distributed between ?/2[2]. The quantization noise may be treated as white noise with power:

    121 22 /

    2 /

    2 == +

    deePe Equation 2-2

    This is independent of frequency, f s. Also the spectral density of e is white (i.e. a constant over

    frequency) and all of its power folds into the frequency band f s / 2. Then the spectral density of

    sampled noise is given by

    ss

    e

    f f P

    f E 1

    12)(

    == Equation 2-3

    2.3. Limitations of Nyquist-rate ADC

    Performance of Nyquist rate converters is limited by the technology in which they are fabricated

    as the resolutions of these converters rely on the matching between the components. For an N-bit

    ADC, the matching should be at least 1/2 N. However, matching of components to greater than 10

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    bits is difficult in any normal CMOS process technology. Hence, high resolution data converters

    are extremely difficult to attain without the use of techniques such as trimming of components or

    calibration.

    The case where f s=2f b is known as Nyquist rate sampling and the anti-aliasing filter before the

    ADC should have a very sharp cut-off. This is a huge drawback especially if these ADCs are

    used in receiver chains as the design and integration of such analog filters is no n-trivial.

    2.4. Oversampling as Compared to Nyquist rate sampling

    Oversampled conversion is a technique that improves the resolution obtained from

    straightforward Nyquist rate conversion. Oversampling refers to acquiring signals from the

    analog waveform at a rate significantly higher than the Nyquist rate. Each of these samples is

    quantized by an N bit ADC. Since quantization is described by equation 2-1, the total amount of

    noise power injected into the sampled signal, x[n] is given by equation 2-2. This is the same

    noise power produced by a Nyquist rate converter but its frequency distribution is different

    because of the higher sampling rate. In the oversampled case the noise power is uniformly

    distributed between f s /2 to f s /2 .

    As shown in Figure 2.1 the noise power in the oversampled case has been spread over a

    bandwidth equal to sampling frequency f s which is much greater than the signal bandwidth. Only

    a relatively small fraction of noise power falls in the band [ -f b f b], and the noise power outside

    signal band can be greatly attenuated with a digital low-pass filter following the ADC. After the

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    low-pass filtering has been performed, the signal can be downsampled to the Nyquist rate

    without affecting the signal to noise ratio. The collective operation of low-pass filtering and

    down-sampling is known as decimation.

    IEIE IVIV

    1 \ TXLVW5 DWH&RQYHUVLRQ

    2 YHUVDPSOHG&RQYHUVLRQ

    3 H I

    Figure 2.1: Quantization noise PSD for Nyquist rate and Oversampled converters

    We define the oversampling ratio, OSR, as

    b

    s

    f

    f OSR

    2= . Then the quantization noise power in-

    band is reduced to [3, Chapter 14]

    =OSR

    Pe1

    12

    2

    Thus every doubling of OSR decreases the quantization noise power by one-half, or equivalently

    3 dB.

    2.5. Sigma Delta Modulators and Noise Shaping

    As seen in the section above, the in-band noise can be substantially reduced by oversampling.

    Sigma-delta converters go a step ahead and use feedback in addition to oversampling to further

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    suppress in-band quantization noise. This can be accomplished by what is termed as Noise

    Shaping, wherein the noise transfer function is made to have a high-pass filter characteristic.

    This decreases the in-band quantization noise but amplifies the noise outside the signal

    bandwidth. The noise power outside the bandwidth can then be removed by the digital

    decimation filter.

    Figure 2.2 shows a block diagram of sigma-delta modulator and the linearized model of the same

    are shown in Figure 2.3. The input to the circuit feeds to the quantizer via an integrator, and the

    quantized output feeds back to subtract from the input signal. The feedback forces the averagevalue of the quantized signal to track the average input. Any persistent difference between them

    accumulates in the integrator and eventually corrects itself. The integrator is modeled as a

    function H(z) and quantizer as a noise source e(n).

    Figure 2.2: Block diagram of Sigma Delta Modulator

    Figure 2.3: Linearized model of a Sigma Delta Modulator

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    From the linear model in the figure above we can derive output

    )(.)(1

    1)(.

    )(1)(

    )( z E z H

    z X z H

    z H zY

    ++

    +=

    Thus the signal experiences a different transfer function than the error.

    2.5.1. First and Second order Sigma Delta Modulator

    To realize a first order noise shaping, we make1

    1)(

    =

    z z H , Giving us a signal transfer function

    STF (z) = z-1 and Noise transfer function N TF (z) = 1- z -1 . Thus the input appears without any

    change at the output (but with a delay) and noise goes through a high-pass filter. A block

    diagram of such a choice is shown in Figure 2.4.

    Figure 2.4: First order Sigma Delta Modulator

    For this configuration, the in-band noise power can be calculated as [3, chapter 14]

    32' 1

    3

    OSR

    PP ee

    And corresponding SNR as

    SNR max = 6.02N + 1.76 5.17 + 30log (OSR)

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    Where N refers to the number of bit the quantizer has. Here we see that doubling the OSR gives

    an SNR improvement of 9dB as compared to 3dB for oversampling without noise shaping.

    Though easy to implement, the quantization noise from a first-order modulator is highly

    correlated [4] and the oversampling ratio needed to achieve resolution greater than 12 bits is

    prohibitively large.

    The second order sigma-delta modulator is a widely used one. This modulator has a noise

    transfer function which is a second-order high pass function. For this modulator the signaltransfer function S TF (z) = z -1 and the noise transfer function is given by NTF(z) = (1 z -1 )2. The

    block diagram implementing these functions is shown in Figure 2.5.

    Figure 2.5: Second order Sigma Delta Modulator

    In a way similar to above, it can be shown that in-band noise power and SNR are,

    54' 1

    5

    OSR

    PP ee

    SNR max = 6.02N + 1.76 12.9 + 50log (OSR)

    Thus, we see here that doubling the OSR improves the SNR for a second-order modulator by

    15dB.

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    In order to achieve high resolution by pushing more quantization noise outside the signal band,

    higher order NTFs have to be implemented. shows a magnitude vs. frequency plot for first-order

    to fourth-order NTF. As can be observed the in-band error decreases but the out-of-band error is

    amplified. The next section deals with various architectures that can be used to implement higher

    order NTFs.

    Figure 2.6: Magnitude vs Frequency plot for first, and higher order ? ? modulators

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    2.6. Architectures of Sigma Delta Modulators

    With the foregoing discussion we can conclude that sigma-delta modulators give us 3 degrees of

    freedom, namely, the quantization level (N), the OSR and the order of the modulator. Based on

    these degrees of freedom, different modulator topologies can be obtained. Sigma-delta

    modulators can be classified into two broad groups: single-loop and multi-loop cascaded

    modulators.

    2.6.1.

    Single loop (Low and High order) Modulators

    Low order sigma-delta modulators, the first and second order discussed above, offer advantage

    of having guaranteed stability, have a simple loop filter design and simple circuit. But these

    modulators have low SNR and very high oversampling ratios are required for achieving high

    SNR, at the same time they are more prone to idling tones. Idle tones are stable sequences output

    by a nonlinear network in the prolonged absence of input; they are manifested as multiple high-

    amplitude single-frequency components in the output of the converter.

    In principle, arbitrary higher-order loop filters can be configured by connecting more integrators.

    The high-order modulator is expected to have a high SNR even for modest oversampling ratios,

    provide better immunity to idling tones and, as they involve simply expanding the configuration,

    they have a simple circuit design. However the stability of these loops becomes precarious for

    loop filters of order greater than 2. Linearized analysis, which results in N TF(z) = (1 z -1 )L, is not

    a reliable predictor of the stability, since the 1-bit quantizer is a grossly nonlinear element whose

    equivalent gain varies abruptly with the value of its input. It is shown [5, chapter 3] that for

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    guaranteed stability the equivalent quantizer gain must be high. Thus, with the fixed output

    amplitude, this will be achieved only if the quantizer input is small. To ensure this, the maximum

    amplitude of input must be restricted to fairly low values, so as to inversely decrease the

    dynamic range. In practice, the loop filter need to be carefully designed and the stability may be

    signal dependent.

    2.6.2. Multi-stage (Cascaded) Modulators

    The multi-stage sigma-delta modulator consist of first and/or second order modulators stages in

    cascade as shown in Figure 2.7. The input to the first stage is the signal to be modulated. The

    consecutive stages modulate the quantization error of the previous ones. The outputs of the

    stages are suitably combined so that at the output of the modulator only the input signal and

    signal-independent noise shaped by (1-z -1 )L are present. This design gives very high SNR and is

    free of stability problems associated with the higher-order single stage converters as multi-stage

    modulators inherit the excellent stability properties of their low-order stages.

    As there are no stability constraints in their design, any increase of their order by cascading more

    stages results to an increase of the SNR. The limit to this increase is the matching of the digital

    and analog parts which requires complex switched-capacitor circuits. The component of the

    output noise due to leakage of the lower-order shaped noise becomes relatively larger compared

    to the increasingly higher-order shaped noise term of the final stage.

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    1

    1

    1

    z z

    1

    1

    1

    z z

    1

    1

    1

    z

    z

    Figure 2.7: Multi-stage (Cascaded) ? ? modulator

    Y1 = z-1X + (1 - z -1 ) E1

    Y2 = z-1 (-E1) + (1 - z -1 ) E2

    Y3 = z-1 (-E2) + (1 - z -1 ) E3

    Y = z -2Y1 + z -1 (1- z -1 ) Y2 + (1- z -1 )2 Y3

    Y = z -3X + (1 - z -1 )3E3

    2.6.3. Multi-bit Modulators

    The above mentioned configurations can be implemented using multi-bit quantizers; employing

    a multi-bit quantizer can increase SNR by 6 dB for every doubling in the number of quantizer

    levels. Thus, a multi-bit modulator can achieve resolution comparable to that of a single-bit

    modulator at a lower sample rate, which is a significant advantage in applications requiring high

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    bandwidth such as digital video. Furthermore, if multi-bit quantizers are used in single-loop

    structures, the system is more stable as the hard non-linearity of the quantizer is less pronounced

    in this case. The extra quantization levels allow for large dither signals at the quantizer input,

    hence eliminating idling tones.

    There are some limitations to the applicability of multi-level quantization within sigma-delta

    modulators. The primary limitation is that a multi-bit DAC needs to be incorporated along with

    an ADC. While a single-bit feedback DAC is linear, the multi-bit DAC is limited by component

    matching of its individual elements. Further, the error generated due to the DAC non- linearity isonly shaped by STF and hence will not be suppressed by the modulator noise-shaping.

    Consequently the DAC linearity should be as high as the desired modulator resolution. This

    becomes difficult to achieve without element trimming. Another limitation stems from the fact

    that the digital decimation filter hardware following the multi-bit quantizer must allow for multi-

    bit inputs. Different techniques have been presented that alleviate the linearity problem

    encountered in multi-bit quantizer. These include like digital correlation [6], dynamic element

    matching [7] and mismatch shaping [8] to suppress the nonlinear DAC noise.

    2.7. Non idealities in SDM

    The implementation of various sigma-delta modulators above assumed the use of ideal

    components, which is not true in practice. There are several non-idealities which generate

    additional noise in the practical sigma-delta modulator, on top of the quantization noise. This

    section discusses various non idealities and how they limit the performance of a sigma-delta

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    modulator. The proper modeling of these non-idealities can help predict the performance of the

    modulator at the early stages of design. Here we only discuss the non-idealities and their

    modeling is discussed in next chapter.

    2.7.1. Circuit Noise

    Intrinsic noise refers to noise that is generated in the device itself, as opposed to noise that

    couples in from an external interfering source, Intrinsic noise cannot be eliminated by shielding,

    filtering, or circuit layout, since it is a property of the device, but its value can be altered by

    choice of circuit topology and component size. The two major sources of noise in sigma-delta

    modulators are the thermal noise of the switches and the op-amp noise.

    Thermal noise is caused by random fluctuation of carriers due to thermal energy and is present

    even at equilibrium. Because of this, it needs to be taken into account for both the switches and

    op-amps in a switched-capacitor circuit. Thermal noise has a white spectrum and a wide band,

    limited only by the time constants of the switched capacitors or the bandwidths of the op-amps.

    As shown in [5, chapter 11] for a sampled circuit with a resistor R and capacitor C, the noise can

    be found by modeling the resistor as having a noise source in series with a power source equa l to

    the Johnson noise 4kTR? f. The total noise power can be found by evaluating the integral

    ( ) C

    kT df

    fRC

    kTRe T

    =+

    =0

    22

    21

    4

    Where k is the Boltzmanns constant and T the absolute temperature. Thus we see that the

    thermal noise is generated in the resistor, the total noise power depends only on the capacitor.

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    The integrators of a switched capacitor modulator may include more than one input branch

    (typically two, input and feedback), each contributing to the total noise power.

    2.7.2. Operational Amplifier Non-idealities

    A major component of a switched capacitor sigma-delta modulator is the integrator made using

    an Op-Amp. An ideal integrator has infinite dc gain, infinite bandwidth, no slew rate limitation

    and no saturation limits.

    2.7.2.1. Limited DC Gain

    The ideal integrator with infinite dc gain has the transfer function

    1

    1

    1)(

    =

    z

    z z H

    But the dc is limited by the circuit constraints and hence causes integrator leak. The

    consequence of this integrator leak is that only a fraction of P 0 of the previous output of the

    integrator is added to each new input sample. The integrator transfer function in this case

    becomes

    10

    10

    1)(

    = zP zg

    z H

    And the dc gain is H 0 = g0 /(1-P 0). The limited gain at low frequency reduces the attenuation of

    the quantization noise in the baseband and consequently results in an increase of the in-band

    quantization noise.

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    2.7.2.2. Limited Bandwidth and Slew Rate

    The integrators constructed from amplifiers with a single dominant pole are observed to have an

    exponential impulse response. The time constant of the response, t, can be nearly as large as the

    sampling period T. This constraint is considerably less stringent than requiring the integrator to

    settle to within the accuracy of the A/D converter. Simulation results indicate that for values of t

    larger than the sampling period, the modulator becomes unstable.

    In typical sampled-data analog filters, the UGB of the operational amplifier must be at least an

    order of magnitude greater than the sampling rate. However, simulations show that for sigma-

    delta modulators implementation of the integrator using operational amplifiers with UGB

    considerably lower than this, and with correspondingly inaccurate settling, will not impair the

    sigma-delta modulator performance, provided that the settling process is linear.

    2.7.2.3. Saturation

    The limited output swing of Op-Amps is a major concern with decreasing bias voltages. This

    requires use of modified architectures to make sure that the signal swing at the output of the

    integrators is within the limits. This is further discussed in the next chapter.

    2.7.3. Comparator Offset and Hysteresis

    The impact of comparator non- idealities is much lower than those of the integrator due to the

    position of the comparator in the modulator loop. The imperfection in the comparator can be

    considered as another noise source which adds to e[n], the quantization error. However, this

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    noise from the extra source is subjected to noise shaping by the modulator and so its affect on

    SNR degradation is not significant.

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    3. System Level (Behavioral) Modeling of ? ? Modulator

    3.1. Introduction

    Choosing specifications for an analog circuit is potentially a very complicated and time

    consuming process. Thus, in a design it is better to perform analysis at the system architectural

    level before starting transistor level design; this reduces the number of design iterations and

    helps exploring the design options better. The ultimate goal being the low level circuit

    parameters dictated by the selected architecture and desired performance.

    Sigma-Delta Modulators being mixed-signal nonlinear circuits pose significant problem in

    estimation of their performance. Hence in order to achieve the performance objectives, it is

    required that various parameters describing the circuit performance be optimized carefully prior

    to and during modulator design. For a systematic design of Sigma-Delta Modulator we can

    enumerate the following tasks

    Topology and accompanying topology parameter selection

    Analysis of the impact of circuit non-idealities on the system performance and specificationof the resulting building block performances.

    Design, optimization and simulation of the building blocks and the system followed by

    performance evaluation.

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    3.2. Modeling Approaches

    Various approaches have been used for accurate modeling of Sigma-Delta Modulation which

    includes device models, circuit macro-models, time-domain macromodels, finite-difference

    equations, table-lookup models, harmonic balance methods and behavioral models [5, chapter

    14].

    Device models are small and large signal models of active devices used in a circuit simulation

    such as SPICE, though accurate, they take extremely long simulation time. Circuit macromodels

    as discussed in [9] are models of circuits made up of several active and passive components; it is

    less complex that the original circuit and uses circuit specifications as model parameters. Though

    this approach provides a good accuracy, the speed improvement with respect to device models is

    poor. Time domain macromodels [10, 11] are based on a set of time-domain equations derived

    for a specific circuit and use circuit specifications as control parameters but are designed strictly

    for transient analysis and are generally not used with a circuit simulator.

    Finite-difference equations are based on the z-transform function of sampled-data circuits. Using

    difference equations results in small and efficient simulation programs, such as MIDAS [12] for

    oversampled converters and SWITCHCAP2 for switched-capacitor circuits. They provide

    quickest simulation of all methods but are poor in non- idealities modeling capabilities. Table-

    lookup models use a two-step approach to modeling. The first step is to extract a table of input

    and output points for the original circuit with the use of a high accuracy simulator followed by

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    using the stored table of points instead of the original circuit for further transient simulations

    [13]. This method seems limit the simulated performance of oversampled converters to 80 dB [5,

    chapter 14].

    Envelope following or harmonic distortion balance method [14], simulates clocked circuits in

    which the waveform is similar from cycle to cycle. However, the states of an oversampled

    converter can change significantly from cycle to cycle and the states are not periodic. Hence, the

    simulation of oversampled converters is an inappropriate target for the harmonic balance

    method. Table 13.1 gives comparison of various models [5, chapter 14]

    Model Advantages Disadvantages

    Device Models Based on device physics Too slow for discrete-time

    systems

    Circuit-based macromodels Can add model features that

    approach device model accuracy

    Only a factor of 10 speed

    improvement over device

    models

    Time-domain macromodels Produces quick simulations; can

    model dynamic errors

    Not reusable because

    equations depend on load and

    feedback configuration

    Difference equations Simulates the quickest of all Custom implementations not

    directly reusable; cannot

    model dynamic errors

    Table-lookup models Acceptable speedup over device

    models; can achieve accurate

    modeling of static errors

    Unclear how to optimize table

    building; only model static

    errors; size of table increases

    with the square of the circuit

    states; tables are not reusable

    Table 3.1: Comparison of several modeling techniques

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    Thus a simulation strategy that provides good speed of simulation, modeling capabilities and

    reusability is needed. A way to do this is behavioral modeling where the circuit is split with

    multiple nonlinearities into a set of linear circuits that are solved explicitly before simulations [5,

    chapter 14]. During simulation, the program determines the correct linear circuit to use and

    applies the pre-solved equation to calculate the next piece of the transient response.

    This chapter proposes a top down design methodology for design of Sigma-Delta Modulators

    which involves choosing the initial topology followed by behavioral modeling to selectappropriate circuit parameters. The program Simulink has emerged as a powerful tool for

    mathematical analysis in recent times, but its use to simulate electronic circuits has been very

    limited. The method used here uses Simulink for behavioral modeling of electronic components

    and overcomes the disadvantages of the other methods by providing an accurate, fast and flexible

    method with good user interface for simulating non- linear mixed signal like Sigma-Delta

    Modulators.

    3.3. Design Methodology

    3.3.1. Topology Selection:

    The following formula gives a relationship among SNR, OSR and Modulator order for a SDM

    with a one-bit quantizer, assuming an input amplitude equal to the modulator output amplitude

    and a perfect differential noise transfer function of (1 z -1 )2 [3].

    SNR =

    + +12

    2 .12

    .23

    10log10 L L M L

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    It can be used to as a first step in order to determine the OSR and Modulator order that will be

    required to obtain a particular SNR. Figure 3.1 shows the theoretical maximum SNR that could

    be achieved using higher order modulators for various OSR; following it is Figure 3.2 which

    shows the maximum SNR that can be achieved practically. The SNR can be improved a little by

    spreading the NTF zeros across the band of interest in a manner that minimizes the in-band

    noise. [5, chapter 4]

    This formula needs to be used with a caution though as it gives a good indication for low OSR

    values but with increase in OSR the validity of the formula decreases. Figure 3.1 suggests that aSNR of 160 dB would result from a 5 th order NTF at an oversampling ratio of 64, but Figure 3.2

    shows that due to the limitation imposed by stability, the achievable SNR is 60 dB lower.

    Figure 3.1: Theoretical SNR of a (1 z -1 )n modulator

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    Figure 3.2: Maximum SNR achievable by modulators of order n with coincident zeroes

    The next step is estimation of the maximum SNR for a given order and topology using

    behavioral simulations. As mentioned earlier, Simulink has been used here to perform behavioral

    simulations (Figure 3.3). This diagram clearly shows the advantage of this approach over others.

    As could be seen the implementation is easy and all basic buildings are provided in the library.

    The integrator has been implemented using a discrete filter block and comparator using the block

    sign (output =1 for input > 0 else output = -1).

    Figure 3.3: Second order sigma -delta modulator using Simulink

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    3.3.2. Signal Scaling

    Signal scaling refers to selection of gain factors in front of each integrator. It is necessary to

    place an appropriate attenuation factor to avoid clipping at the integrator outputs for large input

    signals. The goal of signal scaling is to maximize the dynamic range by using all of the available

    swing without clipping [15]. Figure 3.4 shows the simulated output waveforms for a second

    order modulator with and without scaling. As could be seen the outputs at integrators can grow

    very large (which is impossible to achieve with the implementation) if scaling is not done.

    Figure 3.4: Effect of scaling on integrator outputs

    A one-bit quantizer has the property that the signal gain that comes before it is unimportant, as it

    only detects the polarity. Improper scaling will have a tremendous impact on the dynamic range

    of the modulator. It is shown [16] that if the input to the quantizer is distributed between Vqi

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    and the output is 1, then the power of the quantization error is 1-Vqi+V 2qi and the distribution is

    not uniform for Vqi ?1. This shows that pre-quantization gain affects the quantization error.

    Different approaches have been proposed to solve this problem [17, 18, 19]. One pragmatic

    approach is to consider a linearized quantizer model and adjust the quantizer gain such that the

    total gain around the outermost feedback loop is unity. This empirical technique has little

    rigorous justification but simply produces analytical results that agree with simulation.

    Following are the criteria that should be kept in mind while deciding upon the gain coefficients:

    All of the output swing of the integrators should be used without signal clipping.

    The number of unitary capacitors used should be minimal.

    The digital scaling should be easily implementable (applies for multistage and multibit

    modulator).

    Once the order and topology is determined, various non- idealities (both intrinsic and extrinsic)

    that would be encountered in the implementation of the system can be incorporated to analyze

    their effect on the performance.

    3.3.3. Model for switching noise

    The switch thermal noise is superimposed to the input voltage x(t) leading to

    )(.4

    )()( t nCsKT

    t xt y +=

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    The factor of 4 accounts for the two path through which noise is sampled (during F1 and F2)

    and the fully differential structure of the circuit. The n(t) denotes a Gaussian random process

    with unity standard deviation. If there are two input branches (to incorporate two different

    coefficients, one for the signal and one for the feedback), each branch has to be modeled with a

    separate kT/C noise.

    The switching noise is modeled as shown in Figure 3.5 and is incorporated as an addition to the

    input to the modulator.

    Figure 3.5: Simulink model of Switching Noise

    The effect of kT/C noise on the output PSD is shown in Figure 3.6. As could be seen the

    introduction of this noise raises the output noise floor and as predicted by the equation the

    increase of capacitance reduces the noise.

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    Figure 3.6: Effect of kT/C Noise on PSD of ideal sign wave

    3.3.4. Model for op-amp noise

    The model shown in Figure 3.7 is used to simulate the effect of the operational amplifier noise.

    Then V n represents the total RMS noise voltage of the operational amplifier referred to the input.

    The effect of this noise on the output PSD is similar to the above shown kT/C noise.

    Figure 3.7: Model for op-amp noise

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    3.3.5. Model for limited DC gain

    The following model in Figure 3.8 shows the implementation of practical a Op-Amp with limited

    DC gain a. Figure 3.9 shows the effect of limited gain on the SNR for a second order modulator.

    1

    1

    1)(

    =

    z

    z z H

    Figure 3.8; Model for limited op-amp gain

    Figure 3.9: Effect of gain factor on SNR

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    3.3.6. Model for limited BW and SR

    The behavioral model of limited bandwidth and slew rate is implemented using the MATLAB

    function which calculates output y depending on the input x and value of UGB and SR. The

    following flow chart shows the algorithm for the same.

    =1

    2 UGB

    t x

    SR1 =

    Ts t

    ( ) y x x x SR t eTs t

    =

    sgn( ). . 11

    ( ) y x e Ts= 1 / y x SR Ts= sgn( ). .

    Figure 3.10: Op-Amp flow char t

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    4. Circuit Design and Details

    4.1. Introduction

    The previous chapter discussed the new design methodology using Simulink and how the

    required circuit performance matrices could be determined using the same. This chapter focuses

    on the circuit design of the building blocks needed to implement the sigma-delta modulator.

    These include switched-capacitor integrators, operational amplifiers, comparators and the clock

    generation circuitry.

    An experimental prototype sigma-delta modulator is designed for audio frequency range of 20

    kHz to achieve a SNR of 80 dB [15] in a TSMC035 process with a single power supply of 3.3 V.

    4.2. Topology selection

    Using MATLAB simulation, we can conclude that a second order modulator with an OSR of 128

    should be sufficient for obtaining the result. As mentioned above, for a conventional sigma-delta

    modulator, the signal range required at the outputs of the two integrators is several times the full

    scale analog input range; thus a modified modulator architecture which reduces the signal range

    at the outputs of the integrator considerably is used. The modified architecture which is a slight

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    variation of the classical model is shown in Figure 4.1. It is advantageous from the circuit

    simplicity, noise and power dissipation to make the two gains of the first integrator equal so that

    sampling network can be shared between the input signal and the feedback signal. Thus keeping

    a1 = b1, we can derive other parameters from the MATLAB simulation as described below.

    Figure 4.1: Modified second order modulator architecture

    The variation of SNR with a1 and a2 is shown below in Figure 4.2. As can be seen a1 = 0.5

    gives us the maximum SNR, along with Figure 4.3 showing the output density at integrator 1 and

    as could be seen output goes farther than 1.1 which is difficult to achieve in a low voltage design.

    Hence a1 = 0.4 was chosen which compromises a little of the SNR. Also there is no effect of a2

    on the value of SNR (which is predictable as it is only the gain before the quantizer). The output

    density at Integrator 2 is used to determine the value of a2. Figure 4.4 shows integrator 2 output

    density as function of various integrator gains for a1 = 0.4. As could be seen for a2 = 0.4 the

    output goes a little farther than 1.1 which is acceptable [4]. In the similar way a3 is varied and

    there is not a huge advantage obtained by making a3 different than a2, hence a3 is made same as

    a2 which simplifies the circuit.

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    Figure 4.2: Variation of SNR with a1 and a2

    Figure 4.3: Output density at Integrator 1 and 2 for a1 = 0.5 and a2 varying from 0.1 to 0.9

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    Figure 4.4: Output density at Integrator 1 and 2 for a1 = 0.4 and a2 varying from 0.1 to 0.9

    A fully differential architecture has been used in this design as it has superior power supply

    rejection ratio along with providing twice the output swing for a given supply voltage. In

    addition, the symmetry of a fully differential circuit provides for cancellation of even order

    distortion components, regardless of their cause.

    4.3. Integrator design

    The most important component of a sigma-delta modulator is the integrator, the design of which

    is discussed below. Figure 4.5 shows a simple realization of a parasitic- insensitive single ended

    integrator [3, Chapter 10] which consists of an op-amp, a sampling capacitor C s, a feedback

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    capacitor C f and four switches S1 to S4. In the sampling mode S1 and S4 are on and S2 and S4

    are off, allowing the voltage across C s to track V in while the op amp and C f holds the previous

    value. In the transition to the integration mode, S4 turns off first, S1 turn off next and

    subsequently S2 and S3 are turned on. The charge stored on C s is therefore transferred to C f

    through the virtual node.

    Figure 4.5: Parasitic insensitive switched-capacitor integrator

    To reduce charge- injection effects in SC circuits, a two phase clocking scheme as shown in

    Figure 4.6 is used, the clocks are arranged so as to turn off S2 and S4, which are near the virtual

    ground node of the op-amp, slightly ahead of their counterparts. Another factor which needs to

    be considered during the layout of the integrator is the connection of the bottom plate of the

    capacitor across the op-amp. Integrated capacitors are not generally symmetrical and there is a

    larger parasitic capacitance to the substrate from the bottom plate than from the top plate. The

    capacitors should be connected such that the common plate is driven either directly or through a

    switch by a voltage source or the output of the op-amp. This arrangement causes the parasitic

    capacitance to have the least effect on the operation of the circuit. Also, substrate noise coupling

    is reduced by this arrangement.

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    W

    W

    W

    W

    6

    6

    6

    6

    Figure 4.6: Two phase non-overlapping clocking scheme

    All the switches S1 S4 are realized using minimum sized NMOS so as to minimize parasitics,

    while maintaining good conduction for low enough analog common mode voltage. However

    transmission gates are used for the switches coupled to the input signal, since they must conduct

    over a wide range of voltage.

    Figure 4.7 shows a fully differential implementation of the integrator which is similar to the

    above mentioned integrator except the difference of the feedback voltage V ref The operation of

    the integrator is similar to the one discussed above except that the voltage transferred to the

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    output is the difference between input voltage Vi and the feedback voltage V ref when the

    switches S2 and S3 are turned on.

    Figure 4.7: Fully differential implementation of switched capacitor integrator

    4.3.1. Clock generator

    A simple schematic [20] is used to generate such a two-phase non-overlapping clock as shown in

    Figure 4.8. The outputs C1 and C2 are a pair of non-overlapping clocks, while the outputs C1A

    and C2A refer to slightly advanced version of C1 and C2 respectively. Similarly, the outputs

    C1N and C2N are complementary parts of C1 and C2.

    Figure 4.8: Schematic for non -overlapping clock generation

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    4.3.2. Fully Differential Folded-Cascode Op Amp

    The operational amplifier used in the integrators is the most critical element of the modulator.

    The design of proper op-amp involves a great amount of theoretical calculations and empirical

    simulations to achieve fast speed and sufficient gain.

    Different op-amp topologies were considered and the feasibility to this design was analyzed. A

    single stage telescopic cascode op-amp could have offered a high gain and a good bandwidth but

    it also has lowest output signal swing (important criteria for low-voltage designs). A two-stage

    amplifier can meet the gain and output swing requirements but is slower as compared to the one

    stage amplifiers. Thus folded-cascode op-amp as shown in Figure 4.9 is a good choice providing

    a good combination of swing and bandwidth with a disadvantage of being somewhat noisier than

    other topologies. The basic idea of folded-cascode Op Amp is to apply cascode transistors to the

    input differential pair but using transistors opposite in type from those used in input stage.

    The following design equations can be used to choose various parameters for the device size in

    the Op Amp [21].

    Unity Gain Frequency L

    mt

    C

    g 1=

    Phase Margin ( )1

    6tan Lt

    m

    C

    gPM

    =

    Slew Rate L

    SS

    C

    I SR

    .2=

    Cascode Bias Current += o Lt casc V PM C I )tan(1

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    Figure 4.9: Fully differential folded-cascode Op Amp

    Transistor W/L

    M1, M2 160 / 1.5

    M3 114 / 1.0

    M4, M5 210 / 1.5

    M6, M7 62.5/1.2

    M8, M9 37.0 / 1.2

    M10, M11 37 .0/ 1. 0

    Table 4.1: Transistor sizes for Folded Cascode Op Amp

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    From MATLAB behavioral simulation we obtain that the Op Amp should have gain of at least

    60 dB, a UGB of 60 MHz and SR of 150V/s .

    Assuming a load capacitance of 5pF, the slew rate requirement gives us the bias current equal to

    1.5 mA. Overdrive voltages of 500 mV, 400 mV, 300 mV were chosen for transistor pairs M4-5,

    M6-7, and M8-11 respectively giving us the W/L ratios as given in the table. Using these ratios

    as a preliminary step and after a few iterations, the Op Amp was made to give the required gain,

    bandwidth and slew rate.

    4.3.3. Bias circuit

    This work utilizes a constant-transconductance bias circuit using wide swing cascode current

    mirrors [3, Chapter 6] for generation of reference voltages. A conventional cascode current

    mirror is shown in Figure 4.10 (a).Although its output impedance is increased to rds1(rds2gm1),

    a cascode current mirror reduces the maximum output-signal swing so that the minimum allowed

    voltage for V out is V tn greater than 2V eff , where V eff is the minimum drain-source voltage needed

    to keep a transistor working in the saturation region. This loss of signal swing is a serious

    disadvantage for modern VLSI technologies.

    An alternative circuit shown in Figure 4.10 (b) that does not reduce the signal swing so much

    while keeping high output impendence, called a wide-swing cascode current mirror, can be used.

    The basic idea of this is to bias the transistors at the edge of the triode region. Thus the minimum

    allowable voltage just needs to be greater that (n+1)V eff . If n is unity (keeping I bias = Iin), this

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    mirror can guarantee that all of the transistors are in the saturation region even when V out drops

    to small values.

    2

    / n

    LW 2 /

    n LW

    LW / LW /

    ( )21 /

    +n

    LW

    Figure 4.10: Conventional cascode mirror and Wide -swing cascode current mirror

    The advantages of the wide-swing current mirror is coupled with a constant-transconductance

    bias circuit wherein the transistor transconductances are stabilized using resistor R B and setting

    (W/L) 2 = 4(W/L) 3. This configuration causes the transconductance of M3 to be stabilized to

    Bm

    Rg

    13 =

    Since all transistor currents are derived from the same biasing network and the ratios of current

    are mainly dependent on the geometry, the transconductance of all n-channel transistors is

    stabilized to 333) / (

    ) / (m

    D

    Diimi g I LW

    I LW g =

    and for all p-channel transistors 333) / () / (

    m D

    Dii

    n

    p

    mi g I LW

    I LW

    g =

    The transistors M15 M18 have been added to act as start-up circuitry by injecting currents into

    the bias loop in case all the currents in the loop are zero. Once the currents are set up, the start-up

    circuit is disabled by M15 and M16 turning off.

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    Figure 4.11: Bias Circui t

    Transistor W/L (m/ m)

    M1, M 4 15.0 /3. 2

    M2 60.0 / 2.0

    M3, M12 15.0 / 2.0

    M5 3.5/ 3.2

    M6, M9, M10 45.0 /3. 2

    M7, M8, M11 45.0 / 3.2

    M14 15.0 /3. 2

    M13, M15, M16, M17 20.0/2.0

    M18 4 / 60

    Table 4.2: Transistor W/L ratios for Bias Circuit (R B = 3k)

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    4.3.4. Common-Mode Feedback Circuit

    One requirement of using fully differential Op Amps is that a common-mode feedback (CMFB)

    circuit must be added to establish the common-mode output voltage. This is due to the fact that

    while using fully differential Op Amps in feedback applications, the feedback determines the

    differential signal voltages but the common mode voltage is not affected. Thus it is necessary to

    have a circuit to determine the output common mode voltage and to control it to some specified

    voltage. The CMFB ideally will keep this common-mode voltage immovable, preferably close to

    halfway between the power-supply voltages, even when large differential signals are present.

    Without it, the common-mode voltage is left to drift, since the common-mode loop gain is not

    typically large enough to control its value. The performance requirements on the CMFB circuitry

    are not nearly as stringent as for the main op amp, because the signal of interest is the difference

    between the main op amp outputs.

    There are two typical approaches to design of CMFB circuits namely, continuous time and

    switched-capacitor approach. The later is popular with the switched-capacitor circuits since it

    introduces clock-feedthrough glitches in continuous-time applications. Figure 4.12 shows a

    CMFB circuit used in my work. It may be seen that capacitors C C form a voltage divider to

    generate the average of the op amp output voltages, which is used to generate control voltage for

    the Op Amp current sources. CMOS transmission gates are used to realize the switches

    connected to the outputs of the op amp, in order to accommodate a wider signal swing. The

    switched capacitors C S (20 fF) are set to about one quarter to one tenth the sizes of the non-

    switched capacitors C C (100 fF) so as to avoid common-mode offset voltages and op amp

    overload [3, chapter 6]. All the switches are implemented using minimum sized n-channel

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    transistors except for the switches connected to the outputs which are implemented using

    transmission gates.

    Figure 4.12: Switched capacitor common-mode feedback (CMFB) circuit

    4.4. Regenerative Track and Latch Comparator design

    The second major building block in a sigma-delta modulator is the comparator which quantizes a

    signal in the loop and provides the output of the modulator. The principle design parameters of

    this comparator are speed, which must be adequate to achieve the desired sampling rate, input

    offset, input-referred noise and hysteresis. Since the comparator appears after the loop gain block

    and before the output terminal, non-idealities associated with it are shaped by the loop in the

    same way that the quant ization noise it produces is shaped. Therefore, the performance of the

    modulator is relatively insensitive to offset and hysteresis (i.e. the tendency that a comparator

    might have to stay in the previous direction when it should toggle to another direction) in the

    first-stage comparator.

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    A fast regenerative latch [22] without pre-amplification and offset cancellation, as shown in

    Figure 4.13, has been used to implement the comparator. It consists of discharge transistors, an

    n-channel flip flop with a pair of n-channel transfer gates for strobing, p-channel flip flop, and p-

    channel pre-charge transistors.

    In this latch, the cross-coupled devices M2A M2B and M3A M3B are strobed at their drains,

    rather than sources. Advantages for a flip-flop strobed at drain node over a flip-flop strobed at

    source node exist in regard to regeneration speed and offset. Since carrier mobility is nearly

    twice faster at zero substrate bias than at a few volt substrate bias conditions, regeneration speed

    for the flip-flop is faster for the drain strobing scheme. In addition, since strobing transistors

    isolate the flip-flop, load capacitance becomes only the gate capacitance of the flip-flop itself.

    Offset voltage caused by a channel length fluctuation, which is estimated as the main source of

    total offset voltage, is much lower at zero volt substrate bias. Therefore, transistor channel

    lengths can be decreased and the flip-flop speed can be made faster as a result. An inverting

    buffer is connected to both the output nodes of the p-channel flip-flop to give the same loading

    effect to the flip-flop. Since the analysis is in discrete time, a latch is needed for holding the

    output during the feedback. Hence, we can use a SR latch with NOR gates.

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