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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD649 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V (BR)CEO = 100V(Min) ·High DC Current Gain : h FE = 750(Min) @I C = 3A ·Low Saturation Voltage ·Complement to Type BD650 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T a =25) SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base Voltage 120 V V CEO Collector-Emitter Voltage 100 V V EBO Emitter-Base Voltage 5 V I C Collector Current-Continuous 8 A I CP Collector Current-Peak 12 A I B B Base Current-Continuous 0.3 A Collector Power Dissipation @ T a =252 P C Collector Power Dissipation @ T C =2562.5 W T J Junction Temperature 150 T stg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance,Junction to Case 2 /W R th j-a Thermal Resistance,Junction to Ambient 62.5 /W isc Websitewww.iscsemi.cn

isc Silicon NPN Darlington Power Transistor BD649cdn-reichelt.de/documents/datenblatt/A100/BD649-ISC.pdf · INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington

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Page 1: isc Silicon NPN Darlington Power Transistor BD649cdn-reichelt.de/documents/datenblatt/A100/BD649-ISC.pdf · INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington

INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Darlington Power Transistor BD649

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD650 APPLICATIONS ·Designed for use as complementary AF push-pull output

stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 120 V

VCEO Collector-Emitter Voltage 100 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 8 A

ICP Collector Current-Peak 12 A

IBB Base Current-Continuous 0.3 A

Collector Power Dissipation @ Ta=25℃ 2

PCCollector Power Dissipation @ TC=25℃ 62.5

W

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 2 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W

isc Website:www.iscsemi.cn

Page 2: isc Silicon NPN Darlington Power Transistor BD649cdn-reichelt.de/documents/datenblatt/A100/BD649-ISC.pdf · INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington

INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Darlington Power Transistor BD649 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 100 V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA B 2.0 V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA B 2.5 V

VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA B 3.0 V

VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V

VCB= 100V; IE= 0 0.2

ICBO Collector Cutoff Current

VCB= 60V; IE= 0; TC= 150℃

2.0

mA

ICEO Collector Cutoff Current VCE= 50V; IB= 0 B 0.5 mA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA

hFE DC Current Gain IC= 3A ; VCE= 3V 750

isc Website:www.iscsemi.cn 2