Absolute Maximum Ratings (Per Die)Parameter N-Channel P-Channel Units

ID @ VGS =± 10V, TC = 25°C Continuous Drain Current 0.68 -0.68

ID @ VGS =± 10V, TC = 100°C Continuous Drain Current 0.4 -0.4

IDM Pulsed Drain Current ➀ 2.72➀ -2.72➄

PD @ TC = 25°C Max. Power Dissipation 14 14 W

Linear Derating Factor 0.011 0.011 W/°C

VGS Gate-to-Source Voltage ±20 ±20 V

EAS Single Pulse Avalanche Energy 64➁ 110➅ mJ

IAR Avalanche Current ➀ — — A

EAR Repetitive Avalanche Energy ➀ — — mJ

dv/dt Peak Diode Recovery dv/dt 20➂ 27⑦ V/nsTJ Operating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300 (0.63 in./1.6 mm from case for 10s)Weight 1.3 (Typical) g

Pre-Irradiation

oC

A

04/17/02

www.irf.com 1

Product Summary Part Number RDS(on) ID CHANNEL IRFG5210 1.6Ω 0.68A N IRFG5210 1.6Ω -0.68A P

For footnotes refer to the last page

MO-036AB

IRFG5210200V, Combination 2N-2P-CHANNEL

HEXFET® MOSFET TECHNOLOGY

PD - 91664B

POWER MOSFETTHRU-HOLE (MO-036AB)

HEXFET® MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state resis-tance combined with high transconductance. HEXFET tran-sistors also feature all of the well-established advantagesof MOSFETs, such as voltage control, very fast switching,ease of paralleling and electrical parameter temperaturestability. They are well-suited for applications such as switch-ing power supplies, motor controls, inverters, choppers,audio amplifiers, high energy pulse circuits, and virtuallyany application where high reliability is required. TheHEXFET transistor’s totally isolated package eliminates theneed for additional isolating material between the deviceand the heatsink. This improves thermal efficiency andreduces drain capacitance.

Features:

Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight

2 www.irf.com

IRFG5210

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics (Per Die)Parameter Min Typ Max Units Test Conditions

IS Continuous Source Current (Body Diode) — — 0.63ISM Pulse Source Current (Body Diode) ➀ — — 2.5VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 0.68A, VGS = 0V ➃trr Reverse Recovery Time — — 110 nS Tj = 25°C, IF = 0.68A, di/dt ≤ 100A/µsQRR Reverse Recovery Charge — — 310 nC VDD ≤ 50V ➃

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test ConditionsBVDSS Drain-to-Source Breakdown Voltage 200 — V VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.27 — V/°C Reference to 25°C, ID = 1.0mAVoltage

RDS(on) Static Drain-to-Source On-State — — 1.6 VGS = 10V, ID = 0.4AResistance — — 1.83 VGS = 10V, ID = 0.68A

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 0.25mAgfs Forward Transconductance 0.54 — S ( ) VDS > 15V, IDS = 0.4A ➃IDSS Zero Gate Voltage Drain Current — — 25 VDS= 160V, VGS= 0V

— — 250 VDS = 160V,VGS = 0V, TJ =125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20VIGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20VQg Total Gate Charge — — 9.5 VGS =10V, ID = 0.68A,Qgs Gate-to-Source Charge — — 1.4 nC VDS = 100VQgd Gate-to-Drain (‘Miller’) Charge — — 4.3td(on) Turn-On Delay Time — — 8.7 VDD = 100V, ID = 0.68A,tr Rise Time — — 2.4 VGS =10V, RG = 7.5Ωtd(off) Turn-Off Delay Time — — 19tf Fall Time — — 24LS + LD Total Inductance — 10 — .

Ciss Input Capacitance — 140 — VGS = 0V, VDS = 25V Coss Output Capacitance — 56 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 14 —

nA

Ω

➃

nH

ns

µA

Ω

Thermal Resistance (Per Die)Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 17RthJA Junction-to-Ambient — — 90 Typical socket mount

°C/W

—

—

Note: Corresponding Spice and Saber models are available on the G&S Website.

Measured from drain lead (6mm/0.25in. from package) to sourcelead (6mm/0.25in. from package)

www.irf.com 3

IRFG5210

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics (Per Die)Parameter Min Typ Max Units Test Conditions

IS Continuous Source Current (Body Diode) — — -0.61ISM Pulse Source Current (Body Diode) ➀ — — -2.4VSD Diode Forward Voltage — — -4.8 V Tj = 25°C, IS = -0.68A, VGS = 0V ➃trr Reverse Recovery Time — — 120 nS Tj = 25°C, IF = -0.68A, di/dt ≤ -100A/µsQRR Reverse Recovery Charge — — 420 nC VDD ≤ -50V ➃

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Thermal Resistance (Per Die)Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 17RthJA Junction-to-Ambient — — 90 Typical socket mount

°C/W

Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test ConditionsBVDSS Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.22 — V/°C Reference to 25°C, ID = -1.0mAVoltage

RDS(on) Static Drain-to-Source On-State — — 1.6 VGS = -10V, ID = -0.4AResistance — — 1.83 VGS = -10V, ID =- 0.68A

VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -0.25mAgfs Forward Transconductance 0.64 — — S ( ) VDS > -15V, IDS = -0.4A ➃IDSS Zero Gate Voltage Drain Current — — -25 VDS= -160V, VGS= 0V

— — -250 VDS = -160V,VGS = 0V, TJ =125°C

IGSS Gate-to-Source Leakage Forward — — -100 VGS = - 20VIGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20VQg Total Gate Charge — — 18 VGS = -10V, ID = -0.68A,Qgs Gate-to-Source Charge — — 2.8 nC VDS = -100VQgd Gate-to-Drain (‘Miller’) Charge — — 8.4td(on) Turn-On Delay Time — — 15 VDD = -100V, ID = -0.68A,tr Rise Time — — 11 VGS = -10V, RG = 7.5Ωtd(off) Turn-Off Delay Time — — 36tf Fall Time — — 43LS + LD Total Inductance — 10 —

Ciss Input Capacitance — 320 — VGS = 0V, VDS = -25V Coss Output Capacitance — 110 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 20 —

nA

Ω

➃

nH

ns

µA

Ω

Measured from drain lead (6mm/0.25in. from package) to sourcelead (6mm/0.25in. from package)

4 www.irf.com

IRFG5210

Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

N-Channel Q1,Q3

0.1

1

10

0.1 1 10 100

20µs PULSE WIDTHT = 25 CJ °

TOP

BOTTOM

VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V

V , Drain-to-Source Voltage (V)

I

, D

rain

-to-

Sou

rce

Cur

rent

(A

)

DS

D

4.5V

0.1

1

10

0.1 1 10 100

20µs PULSE WIDTHT = 150 CJ °

TOP

BOTTOM

VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V

V , Drain-to-Source Voltage (V)

I

, D

rain

-to-

Sou

rce

Cur

rent

(A

)

DS

D

4.5V

0.1

1

10

4 5 6 7

V = 50V20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I

, D

rain

-to-

Sou

rce

Cur

rent

(A

)

GS

D

T = 150 CJ °

T = 25 CJ °

-60 -40 -20 0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R

,

Dra

in-t

o-S

ourc

e O

n R

esis

tanc

e(N

orm

aliz

ed)

J

DS

(on)

°

V =

I =

GS

D

12V

0.68A

10V

www.irf.com 5

IRFG5210

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

N-Channel Q1,Q3

1 10 1000

60

120

180

240

300

V , Drain-to-Source Voltage (V)

C,

Cap

acita

nce

(pF

)

DS

VCCC

====

0V,CCC

f = 1MHz+ C

+ C

C SHORTEDGSiss gs gd , dsrss gdoss ds gd

Ciss

Coss

Crss

0 2 4 6 8 100

4

8

12

16

20

Q , Total Gate Charge (nC)

V

,

Gat

e-to

-Sou

rce

Vol

tage

(V

)

G

GS

FOR TEST CIRCUITSEE FIGURE

I =D

16

0.68A

V = 40VDS

V = 100VDS

V = 160VDS

0.1

1

10

0.4 0.6 0.8 1.0 1.2

V ,Source-to-Drain Voltage (V)

I

,

Rev

erse

Dra

in C

urre

nt (

A)

SD

SD

V = 0 V GS

T = 25 CJ °

T = 150 CJ °

0.1

1

10

0.1 1 10 100 1000

OPERATION IN THIS AREA LIMITEDBY RDS(on)

Single Pulse T T

= 150 C= 25 C°

°JC

V , Drain-to-Source Voltage (V)

I

, D

rain

Cur

rent

(A

)I

,

Dra

in C

urre

nt (

A)

DS

D

100us

1ms

10ms

13a & b

6 www.irf.com

IRFG5210

Fig 10a. Switching Time Test Circuit

VDS

90%

10%VGS

td(on) tr td(off) tf

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µsDuty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

+-VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.Case Temperature

N-Channel Q1,Q3

VGS

0.1

1

10

100

0.001 0.01 0.1 1 10 100 1000

Notes:1. Duty factor D = t / t2. Peak T = P x Z + T

1 2

J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

The

rmal

Res

pons

e(Z

)

1

thJA

0.010.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

25 50 75 100 125 1500.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

T , Case Temperature ( C)

I

, D

rain

Cur

rent

(A

)

°C

D

www.irf.com 7

IRFG5210

QG

QGS QGD

VG

Charge

D.U.T.VDS

IDIG

3mA

VGS

.3µF

50KΩ

.2µF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-10 V

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V (B R )D S S

IA S

R G

IA S

0 .01Ωtp

D .U .T

LV D S

+- VD D

DR IVE R

A

15V

20V

N-Channel Q1,Q3

.

VGS

25 50 75 100 125 1500

30

60

90

120

150

Starting T , Junction Temperature ( C)

E

,

Sin

gle

Pul

se A

vala

nche

Ene

rgy

(mJ)

J

AS

°

IDTOP

BOTTOM

0.30A 0.43A 0.68A

10V

8 www.irf.com

IRFG5210

Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

P-Channel Q2,Q4

0.1

1

10

0.1 1 10 100

20µs PULSE WIDTHT = 150 CJ °

TOP

BOTTOM

VGS-15V-10V-8.0V-7.0V-6.0V-5.5V-5.0V-4.5V

-V , Drain-to-Source Voltage (V)

-I

,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

DS

D

-4.5V

0.1

1

10

4 5 6 7

V = -50V20µs PULSE WIDTH

DS

-V , Gate-to-Source Voltage (V)

-I

,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

GS

D

T = 25 CJ °

T = 150 CJ °

-60 -40 -20 0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature( C)

R

,

Dra

in-t

o-S

ourc

e O

n R

esis

tanc

e(N

orm

aliz

ed)

J

DS

(on)

°

V =

I =

GS

D

-12V

-0.68A

10V

www.irf.com 9

IRFG5210

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

P-Channel Q2,Q4

1 10 1000

100

200

300

400

500

600

V , Drain-to-Source Voltage (V)

C,

Cap

acita

nce

(pF

)

DS

VCCC

====

0V,CCC

f = 1MHz+ C

+ C

C SHORTEDGSiss gs gd , dsrss gdoss ds gd

Ciss

Coss

Crss

0 4 8 12 16 200

4

8

12

16

20

Q , Total Gate Charge (nC)

-V

,

Gat

e-to

-Sou

rce

Vol

tage

(V

)

G

GS

FOR TEST CIRCUITSEE FIGURE

I =D

13

-0.68A

V =-40VDS

V =-100VDS

V =-160VDS

0.1

1

10

1.0 2.0 3.0 4.0

-V ,Source-to-Drain Voltage (V)

-I

,

Rev

erse

Dra

in C

urre

nt (

A)

SD

SD

V = 0 V GS

T = 25 CJ °

T = 150 CJ °

0.1

1

10

1 10 100 1000

OPERATION IN THIS AREA LIMITEDBY RDS(on)

Single Pulse T T

= 150 C= 25 C°

°JC

-V , Drain-to-Source Voltage (V)

-I

, D

rain

Cur

rent

(A

)I

,

Dra

in C

urre

nt (

A)

DS

D

100us

1ms

10ms

10 www.irf.com

IRFG5210

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.Case Temperature

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µsDuty Factor ≤ 0.1 %

RD

VGS

VDD

RG

D.U.T.

+-

VDS

90%

10%

VGS

td(on) tr td(off) tf

P-Channel Q2,Q4

VGS

0.1

1

10

100

0.001 0.01 0.1 1 10 100 1000

Notes:1. Duty factor D = t / t2. Peak T = P x Z + T

1 2

J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

The

rmal

Res

pons

e(Z

)

1

thJA

0.010.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

25 50 75 100 125 1500.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

T , Case Temperature ( C)

-I

, Dra

in C

urre

nt (

A)

°C

D

www.irf.com 11

IRFG5210

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V (BR)DSS

I A S

R G

IA S

0.01Ωtp

D .U .T

LVD S

VD D

D R IVE RA

15V

-20V

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

QG

QGS QGD

VG

Charge

-10V

D.U.T.VDS

IDIG

-3mA

VGS

.3µF

50KΩ

.2µF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

-10V

P-Channel Q2,Q4

.

VGS

25 50 75 100 125 1500

60

120

180

240

300

Starting T , Junction Temperature ( C)

E

,

Sin

gle

Pul

se A

vala

nche

Ene

rgy

(mJ)

J

AS

°

IDTOP

BOTTOM

-0.30A -0.43A -0.68A

12 www.irf.com

IRFG5210

➄ Repetitive Rating; Pulse width limited bymaximum junction temperature.

➅ VDD = - 50V, starting TJ = 25°C, L= 475mH,Peak IL = - 0.68A, VGS = -10V

⑦ ISD ≤ - 0.68A, di/dt ≤ - 290A/µs,VDD ≤ -200V, TJ ≤ 150°C

➀ Repetitive Rating; Pulse width limited bymaximum junction temperature.

➁ VDD = 50V, starting TJ = 25°C, L= 276mH,Peak IL = 0.68A, VGS = 10V

➂ ISD ≤ 0.68A, di/dt ≤ 290A/µs,VDD ≤ 200V, TJ ≤ 150°C

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions — MO-036AB

Footnotes:

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02