IREAP

Studies of HPM Effects in Electronic Systems

J. Rodgers, M. Holloway (DEPS Scholar), T. Firestone andV. L. Granatstein,

Institute for Research in Electronics and Applied PhysicsUniversity of Maryland

College Park, MD 20742

rodgers@umd.edu

IREAP

Outline

• The basic electronics of HPM effects

• Summary of 2008 work– Began testing of mixed-signal systems– Studied HPM susceptibility of sensors (ARL)– Development of systems modeling capability

• Wideband multi-frequency test source (AFOSR-Plasma Physics)

• Proposed 2009 Effort

IREAP Scope of Work

HPM Source

EM Coupling

Cavity Fields

Circuit Response

HPM Effects Models

Test

Validate

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Large-signal (LS) Semiconductor Electronics

Typical LS current-voltage characteristics

Input Pad

Cross section of a planar semiconductor

QM

NL

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Semiconductor junctions + package/trace reactance Nonlinear resonances NL Frequency products

0

10

0 2000

Frequency

Am

pli

tud

eBaseband

RF

Both frequency bands can produce effects.

HPM

HPM-driven instability in circuits

Typical RF Voltage @ IC Input

0

1

2

3

4

5

0 10 20 30Time (msec)

Vo

ltag

e

Circuit Response

The Effects “Spectrum”

0

2

4

6

8

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Resonant Frequency (GHz)

Qu

ali

ty F

ac

tor

0

0.5

1

1.5

2

2.5

0 1000 2000 3000 4000

Frequency (MHz)

RF

-to

-BB

Vo

lta

ge

Tra

ns

fer

0.13 Micron Processor

High-speed_CMOS

CD 4000

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HPM Effects in Sensors & DetectorsApplications: Communications, Imaging, Ranging, Detection, Encoding

0

200

400

600

1 1.1 1.2 1.3 1.4 1.5

Frequency (GHz)

Eff

ec

t (V

/ k

W*m

^2

)

0

20

40

60

80

100

1 1.1 1.2 1.3 1.4 1.5

Frequency (GHz)

Eff

ec

t (V

/ k

W*m

^2

)

•IR PIN Photo Detector

•Hall Effect Sensor

Soft effects could be fatal to a system

Over-Current: PMOS and NMOS conduct at

the same time!

Cascaded Gain Effects

0

0.5

1

1.5

2

2.5

3

3.5

0 0.2 0.4 0.6 0.8 1

RF Amplitude (V)

Vo

ut (

V)

I ds

(mA

)

-2

0

2

4

6

0 0.2 0.4 0.6 0.8 1

RF Amplitude (V)

RF

Gai

n (d

Bv)

0

0.5

1

1.5

2

2.5

Out

put

RF

(V

)

Gain

RF Out

3-10 times normal current

IREAP

HPM “Over-Current” Effect in CMOS

0

100

200

300

400

500

0 0.5 1 1.5 2

V g (V)

I ds (m A

)

1500 MHz

800 MHz

400 MHz

100 MHz

DC

PMOS

NMOS

Ids

Vg

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Can existing codes (e.g. Agilent ADS) be used to model HPM effects?

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RF Model Libraries for Standard IC Packages

HPM

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The EM characteristics of electrically small (d<) features (IC packaging leads, bonding wires, etc.) can

be extracted and modeled as lumped elements.

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Parasitic elements are then coupled to nonlinear circuit models

Bond wire and package model

Nonlinear IC model

Models agree well at the device level.

0

100

200

300

400

0 1 2 3

V g (V)I d

s (m

A)

•Model parameters extracted from process technology files.

•Some modification required to account for NQS and HF device operation.

•Use nonlinear device and harmonic balance simulation mode (s>3).

Comparison of measured & simulated over-current effect in AMI 0.5m CMOS

CMOS

ESD

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AGILENT ADS Design Flow

HPM

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Development of Novel Wideband HPM Test Sources

High-Power RF Coupler

High-Current Plasma Cathode

E-BeamPlasma

DirectionalCoupler

Traveling-waveDevice

Variable Atten.Delay Line

High-power Output

Dynamic Control

IREAP

Sw Frequency (MHz / 10)

Tim

e (m

s)

Loop Gain = 15 dB

Sw Frequency (MHz / 10)

Loop Gain = 5 dB

Tim

e (m

s)

HPM source with chirp-hop output frequency

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Collaborations• NSWC to conduct effects tests on vehicles

using UMD source.• ARL: performing basic effects tests on

various sensors (e.g. IR) of interest.• AFRL: EMERD• NRL• Sandia: new basic research program in

progress.

IREAP

Research Personnel• PhD:

– Todd Firestone, graduated December 2008– Mike Holloway, DEPS Scholarship, projected to

graduate fall 2009

• Postdoctoral:– Dr. Zeynep Dilli: QM device physics and

modeling, joined group Jan. 2009

• Undergraduates:– Collin Kennedy & Mark Strother (juniors physics)