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Jan M. Rabaey Introduction

Introduction Chapter 1 Introduction - LTH · Slide 1.17. Power: The Dominant Design Constraint ... T. Sakurai,“Perspectives on power-aware electronics,” Digest of Technical Papers

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Chapter 1

Introduction

Jan M. Rabaey

Introduction

Slide 1.1

Why Worry About Power?

Total energy of Milky Way galaxy: 1059 J

Minimum switching energy for digital gate (1 electron@100mV): 1.6 × 10–20J (limited by thermal noise)

Upper bound on number of digital operations: 6 × 1078

Operations/year performed by 1 billion 100 MOPS computers: 3 × 1024

Entire energy might be consumed in 180 years, assuming a doublingof computational requirements every year (Moore’s Law).

The Tongue-in-Cheek Answer

Slide 1.2

Power: The Dominant Design Constraint (1)

Cost of large data centers solely determined by power bill …

Google Data Center, The Dalles, OregonGoogle Data Center, The Dalles, Oregon

Columbia River

8,000100,000

450,000

NY Times, June 06

400 Millions of Personal Computers worldwide (Year 2000)

-Assumed to consume 0.16 Tera (1012) kWh per year-Equivalent to 26 nuclear power plants

Over 1 Giga kWh per year just for cooling-Including manufacturing electricity

[Ref: Bar-Cohen et al., 2000]

Slide 1.3

Power: The Dominant Design Constraint

[Ref: R. Schmidt, ACEED’03]

Slide 1.4

[Ref: R. Yung, ESSCIRC’02]

Chip Architecture and Power Density

Integration of diverse functionality on SoC causes major variations in activity(and hence power density)

The past: temperature uniformity

Today: steep gradients

Temperature variations cause performance degradation –higher temperature means slower clock speed

Slide 1.5

Temperature Gradients (and Performance)

IBM PowerPC 4 temperature map

Hot spot:138 W/cm2

(3.6 x chip avg flux)

Glass ceramic substrate

SiC spreader (chip underneath spreader)

Copper hat (heat sink on top not shown)

[Ref: R. Schmidt, ACEED’03]

Slide 1.6

Power consumption and battery capacity trends[Ref: Y. Nuevo, ISSCC’04]

Power : The Dominant Design Constraint (2)

© IEEE 2004

Slide 1.7

[Ref: F. Snijders, Ambient Intelligence’05]

Slide 1.8

Battery Storage a Limiting Factor

Basic technology has evolved little– store energy using a chemical reaction

Battery capacity increases between 3% and 7% per year (doubled during the 1990s, relatively flat before that)

Energy density/size and safe handling are limiting factors

Energy density of material

kWh/kg

Gasoline 14

Lead-acid 0.04

Li polymer 0.15

For extensive information on energy density of various materials, check http://en.wikipedia.org/wiki/Energy_density

Slide 1.9

Battery Evolution

020406080

100120140160

1940 1950 1960 1970 1980 1990 2000 2010

First Commercial Use

Energy Density(Wh/kg)

Trend Line

Accelerated since the 1990s, but slower than IC power growth.

Li-ion

Slide 1.10

Battery Technology Saturating

Battery capacity naturally plateaus as systems develop

[Courtesy: M. Doyle, Dupont]

Slide 1.11

Need Higher Energy Density

Fuel cells may increase stored energy bymore than an order of magnitudeExample: Methanol = 5 kWh/kg

Ano

de

Ele

ctro

lyte

Cat

hode

+ ions

Load

e–

+–

Fue

l

2H2

4H+

+ 4

e–

Oxi

dant

O2

+ 4

H+

+ 4

e–2H

2O

H O

[Ref: R. Nowak, SECA’01]

Slide 1.12

Fuel CellsMethanol fuel cellsfor portable PCs and MP3 players

Fuel cell for PC (12 W avg – 24% effiency)

Fuel cell for portable MP3 player(300 mW from 10 mlreservoir)

Dur

atio

n [h

]

[Ref: Toshiba, 2003-2004]

Slide 1.13

Micro batteries: When Size Is an Issue

Battery printed on wireless sensor node

Using micro-electronics or thin-film manufacturing techniques to create integrated miniature (backup) batteries on chip or on board

Stencil press for printing patterns

[Courtesy: P. Wright, D. Steingart, UCB]

Slide 1.14

How Much Energy Storage in 1 cm3?

J/cm3 μW/cm3/year

Micro fuel cell 3500 110

Primary battery

2880 90

Secondary battery

1080 34

Ultracapacitor 100 3.2

Ultracapacitor

Micro fuel cell

Ultracapacitor

Slide 1.15

Power: The Dominant Design Constraint (3)

Exciting emerging applications requiring “zero-power”

Example: Computation/communication nodes

[Ref: J. Rabaey, ISSCC’01]

for wireless sensor networks

Meso-scale low-cost wireless transceivers for ubiquitous wireless data acquisition that• are fully integrated

– size smaller than 1 cm3

• are dirt cheap–at or below 1$

• minimize power/energy dissipation– limiting power dissipation to 100 μW

enables energy scavenging, and

• form self-configuring, robust, ad hoc networks containing 100s to 1000s of nodes

Slide 1.16

How to Make Electronics Truly Disappear?

From 10s of cm3 and 10s to 100s of mW

To 10s of mm3 and 10s of μW

Slide 1.17

Power: The Dominant Design Constraint

Exciting emerging applications requiring “zero-power”

Real-time Health Monitoring

Smart Surfaces

Artificial Skin

Philips Sand module

UCB mm3 radio

UCB PicoCube

Still at least one order of magnitude away

Slide 1.18

How Much Energy Can One Scavenge in 1 cm3?

Thermal

Air Flow

Solar

Vibrations

Slide 1.19

A Side Note: What Can One Do with 1 cm3?

Reference case: the human brain

Pavg(brain): 20 W (20% of the total dissipation, 2% of the weight)

Power density: ~15 mW/cm3

Nerve cells only 4% of brain volume Nerve cells only 4% of brain volume Average neuron density: 70 million/cmAverage neuron density: 70 million/cm33

Slide 1.20

Power Versus Energy

� Power in high-performance systems– Heat removal– Peak power and its impact on power delivery networks

� Energy in portable systems– Battery life

� Energy/power in “zero-power systems”– Energy-scavenging and storage capabilites

� Dynamic (energy) vs. static (power) consumption– Determined by operation modes

Slide 1.21

Power Evolution over Technology Generations

Introduction of CMOS over bipolar bought the industry 10 years(example: IBM mainframe processors)

[Ref: R. Chu, JEP’04]

Year of Announcement1950 1960 1970 1980 1990 2000 2010

Mod

ule

Hea

t Flu

x(w

/cm

2 )

0

2

4

6

8

10

12

14

Bipolar

CMOS

VacuumIBM 360

IBM 370IBM 3033

IBM ES9000

Fujitsu VP2000

IBM 3090S

NTT

Fujitsu M-780

IBM 3090

CDC Cyber 205IBM 4381

IBM 3081Fujitsu M380

IBM RY5

IBM GP

IBM RY6

Apache

Pulsar

Merced

IBM RY7

IBM RY4

Pentium II(DSIP)

T-Rex

Squadrons

Pentium 4

Mckinley

Start ofWater Cooling

Prescott

Jayhawk(dual)

©ASME 2004

Slide 1.22

Power Trends for ProcessorsP

ower

per

chi

p [W

]

1980 1985 1990 1995 20000.01

0.1

1

10

100

1000

Year[Ref: T. Sakurai, ISSCC’03]

MPU

x4 / 3

year

s

DSP

x1.4 / 3 years© IEEE 2003

Slide 1.23

PDYNAMIC k0.7

Proportional V scaling and short-channel devices

PDYNAMIC k0kk .7

Proportional V scaling andshort-channel devices

Power Density Trend for Processors

P = PDYNAMIC (+ PLEAK)

Scaling the Prime Reason!

Pow

er d

ensi

ty :

p [W

/cm

2 ]

0.1

1

10

100

1000

1 10

Design rule [µm]0.11

Scaling variable: k

k3

10000

k0.7

MPU DSP

Constant-voltage scalingand long-channel devices

PDYNAMIC k 3

Proportional-voltage scalingand short-channel devicest

P

© IEEE 2003

DYNAMIC k 0.7∝

→→

[Ref: T. Sakurai, ISSCC’03]

Slide 1.24

Evolution of Supply Voltages in the Past

Minimum Feature Size (μm)10–11

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Sup

ply

Vol

tage

(V

)

Supply voltage scaling only from the 1990s

Slide 1.25

Sub-threshold Leakage as an Extra Complication

[Ref: T. Sakurai, ISSCC’03]

2002 ’04 ’06 ’08 ’10 ’12 ’14 ’160

1

2

Year

PDYNAMIC

P LEAK

Po

wer

W /

gat

e]

Subthreshold leak(Active leakage)

Year2002’04 ’06 ’08 ’10 ’12 ’14 ’160

0.2

0.4

0.6

0.8

1

1.2

0

20

40

60

80

100

120

Tec

hn

olo

gy

no

de[

nm

]

Vo

ltag

e [V

]

VTH

VDD

Technologynode

©IEEE 2003

Slide 1.26

Static Power (Leakage) May Ruin Moore’s Law

Pow

er p

er c

hip

[W

]

1980 1985 1990 1995 20000.01

0.1

1

10

100

1000

Year

MPU

x4 / 3

year

s

DSP

x1.4 / 3 years

Processors published in ISSCC

2005 2010 2015

x1.1 / 3 years

ITRS requirement

10000

Dynamic

[Ref: T. Sakurai, ISSCC’03]

Leakage

1/100© IEEE 2003

Slide 1.27

Power Density Increases

4004

20102000199019801970

8008

80808085

8086

286386

486Pentium® proc

P6

1

10

100

1000

10000

Year

Po

wer

Den

sity

(W

/cm

2 )

Hot Plate

Nuclear Reactor

Rocket Nozzle

Sun’s Surface

UpperBound?

Unsustainable in the long term

[Courtesy: S. Borkar, Intel]

Slide 1.28

Projecting into the Future

1

10

100

1000

2006 20082004 20162014 20202018 202220122010

Active power density: k

1.9

Leakage power density: k

2.7

Computing density: k

3

FD-SOI Dual Gate

Power density (active and static) accelerating anewTechnology innovations help, but impact limited

Slide 1.29

Complicating the Issue: The Diversity of SoCs

Power budgets of leading general purpose (MPU) and specialpurpose (ASSP) processors

[Ref: many combined sources]

Slide 1.30

Supply and Threshold Voltage Trends

VDD

VT

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

VDD /

VTH = 2

Voltage reduction projected to saturateOptimistic scenario – some claims exist that VDD may get stuck around 1 V

[Ref: ITRS 05, Low power scenario]

2006 20082004 20162014 20202018 202220122010

Slide 1.31

A 20 nm Scenario

Assume VDD = 1.2 VFO4 delay < 5 psAssuming no architectural changes, digital circuits couldbe run at 30 GHz Leading to power density of 20 kW/cm2 (??)

FO4 delay 10 ps

Reduce VDD to 0.6 V~~

The clock frequency is lowered to 10 GHzPower density reduces to

[Ref: S. Borkar, Intel]

5 kW/cm2 (still way too high)

Slide 1.32

A 20 nm Scenario (contd)

Assume optimistically that we can design FETs(Dual-Gate, FinFet, or whatever) that operate at 1 kW/cm2 for FO4 = 10 psand VDD = 0.6 V [Frank, Proc. IEEE, 3/01]

For a 2cm x 2cm high-performance microprocessor die,this means 4 kW power dissipation.If die power has to be limited to 200 W, only 5% of thesedevices can be switching at any time,assuming that nothingelse dissipates power.

[Ref: S. Borkar, Intel]

Slide 1.33

An Era of Power-Limited Technology Scaling

Technology innovations offer some reliefDevices that perform better at low voltage without leaking toomuch

But also are adding major griefImpact of increasing process variations and various failuremechanisms more pronounced in low-power design regime

Most plausible scenarioCircuit- and system-level solutions essential to keeppower/energy dissipation in check Slow down growth in computational density and use theobtained slack to control power density increaseIntroduce design techniques to operate circuits atnominal, not worst-case, conditions

Slide 1.34

Some Useful References …Selected Keynote Presentations

F. Boekhorst,“Ambient intelligence, the next paradigm for consumer electronics: How will it affect Silicon?,” Digest of Technical Papers ISSCC, pp.28–31, Feb. 2002. T.A.C.M. Claasen, “High speed: Not the only way to exploit the intrinsic computational power of silicon,” Digest of Technical Papers ISSCC , pp.22–25, Feb.1999.H. DeMan, “Ambient intelligence: Gigascale dreams and nanoscale realities,” Digest of Technical Papers ISSCC, pp.29–35, Feb. 2005. P.P. Gelsinger, “Microprocessors for the new millennium: Challenges, opportunities, and new frontiers,” Digest of Technical Papers ISSCC, pp.22–25, Feb. 2001. G.E. Moore, “No exponential is forever: But "Forever" can be delayed!,” Digest of Technical Papers ISSCC, pp.20–23, Feb. 2003. Y. Neuvo,“Cellular phones as embedded systems,” Digest of Technical Papers ISSCC, pp.32–37, Feb. 2004.T. Sakurai,“Perspectives on power-aware electronics,” Digest of Technical Papers ISSCC, pp.26–29, Feb. 2003.R. Yung, S.Rusu and K.Shoemaker, “Future trend of microprocessor design,” Proceedings ESSCIRC, Sep. 2002.

Books and Book ChaptersS. Roundy, P. Wright and J.M. Rabaey, “Energy scavenging for wireless sensor networks,” KluwerAcademic Publishers, 2003.F. Snijders, “Ambient Intelligence Technology: An Overview,” In Ambient Intelligence, Ed. W. Weberet al., pp. 255–269, Springer, 2005. T. Starner and J. Paradiso, “Human-Generated Power for Mobile Electronics,” In Low-Power Electronics, Ed.C. Piguet, pp. 45–1-35, CRC Press 05.

Slide 1.35

Some Useful References (cntd)

PublicationsA. Bar-Cohen, S. Prstic, K. Yazawa and M. Iyengar. “Design and Optimization of Forced Convection Heat Sinks for Sustainable Development”, Euro Conference – New and Renewable Technologies for Sustainable Development, 2000.S. Borkar, numerous presentations over the past decade.R. Chu, “The challenges of electronic cooling: Past, current and future,”Journal of Electronic Packaging, 126, p. 491, Dec. 2004. D. Frank, R. Dennard, E. Nowak, P. Solomon, Y. Taur, and P. Wong, “Device scaling limits of SiMOSFETs and their application dependencies,” Proceedings of the IEEE, Vol 89 (3),pp. 259 –288, Mar. 2001.International Technology Roadmap for Semiconductors, http://www.itrs.net/J. Markoff and S. Hansell, “Hiding in Plain Sight, Google Seeks More Power”, NY Times, http://www.nytimes.com/2006/06/14/technology/14search.html? r=1&oref=slogin, June 2006..R. Nowak, “A DARPA Perspective on Small Fuel Cells for the Military,” presented at Solid State Energy Conversion Alliance (SECA) Workshop, Arlington, Mar. 2001.J. Rabaey et al. "PicoRadios for wireless sensor networks: the next challenge in ultra-low power design,”Proc. 2002 IEEE ISSCC Conference, pp. 200–201, San Francisco, Feb. 2002.R. Schmidt, “Power Trends in the Electronics Industry –Thermal Impacts,” ACEED03, IBM Austin Conference on Energy-Efficient Design, 2003.Toshiba, “Toshiba Announces World's Smallest Direct Methanol Fuel Cell With Energy Output of 100 Milliwatts,” http://www.toshiba.co.jp/about/press/2004_06/pr2401.htm, June 2004.

Slide 1.36