Infrared LEDs · W or pulsed operation—MHz to D Nanosecond to seconds repetition rate urrent and voltage monitor powered from US (

Infrared LEDs

Centered at 1.9 to 7 m

Some notes about our IR LEDs.docx

Boston Electronics Corporation 91 Boylston Street, Brookline, Massachusetts 02445 USA

(800)347-5445 or (617)566-3821 fax (617)731-0935

www.boselec.com [email protected]

Some notes about our IR LEDs

• We generally have in stock for immediate delivery a few of these

devices in the LEDnnSr package.

• We have a convenient low cost programmable electronic drivecircuit board available. The Universal Photon Source (UPS) Driverdata sheet is included in this catalog.

• We do not generally recommend using the TE‐cooled versions of

these devices for the following reasons:

1. Using TWO room temp devices gives more optical power than

using ONE TE‐cooled device

2. Buying TWO room temp devices costs less than buying ONE TE‐

cooled device

3. Electronics to drive a TE‐cooler and heat sinking a TE cooler addsignificant cost and complication

[email protected] | www.boselec.com | 617-566-3821

UPS Driver™ Universal Photon Source (UPS) Driver Board

Features

Easy to use

Low cost

Simple, flexible control using dedicated

software

Adjustable voltage driving the source

CW or pulsed operation—MHz to DC

Nanosecond to seconds repetition rate

Current and voltage monitor

powered from USB (<0.5A) or DC supply

The Boston Electronics Universal Photon Source (UPS) Driver delivers! It is a flexible,

compact, low cost, configurable board, including power supply, that drives a wide range

of light sources. The driver can control pulsed and CW sources, which makes it suitable

for driving ultraviolet (UV), visible and infrared (IR) sources, light emitting diodes (LEDs)

and lasers over a frequency range of MHz to DC.

Control is provided by easy to use PC software. The last used drive parameters are stored

in the non-volatile EEPROM memory; thus, the configuration is remembered. The UPS

Driver is equipped with voltage and current monitors, trigger output, power and commu-

nication inputs and anode/cathode connections for the sources.

The UPS Driver is compatible with UV, visible and IR sources, LEDs and lasers.


UPS Driver Specifications Electrical parameters:

Power supply: - USB from computer or +5 ... +6 V, connected to the DC Jack connector

Average power sources

max. 1.5W, for the power supply from USB

max. 10W, for the power supply connected to the DC Jack connector

Adjustable voltage supply, in the range 0.5 – 25V, 4095 steps

Maximum current: 10 A (tested with QCL at 20 V and 100 ns pulse width)

Monitor for the supply voltage source (ADC)

Master clock period / frequency:

main clock period / frequency output signal max. period / min. frequency 25 ns / 40 MHz 1.638 ms / 610 Hz 50 ns / 20 MHz 3.27 ms / 305 Hz 100 ns / 10 MHz 6.55 ms / 152 Hz 200 ns / 5 MHz 13.1 ms / 76.3 Hz 1600 ns / 0,625 MHz 104 ms / 9.54 Hz 6.4 μs / 156,25 kHz 420 ms / 2.38 Hz 25.6 μs / 39,0625 kHz 1.677 s / 0.594 Hz

Pulse repetition period - adjustable in the range 1 ... 65535 times the period of the master clock

Pulse duration - adjustable in the range 1 ... 65535 times the period of the master clock

if pulse duration is higher than the period, source stays on – CW operation

Driving signal rise / fall times < 3 ns.

Pulse jitter : 6 ns pp

Trigger output starts 50 ns before the IR pulse

adjustable duration time in the range 1 ... 65535 times the period of the master clock

Power supply monitor

Source average current monitor - time constant 100 ms

All parameters have their equivalent – minimum/maximum to provide for safe operation

Anode of the source is connected to ground, cathode below ground potential

Software

The UPS Driver is configured using PC software, or text protocols.

Connections: trigger output—SMA connector

output impedance 50 Ω

standard LVTTL: logic 0 - 0 V, logic 1 – 3,3 V @ Hi-imp, 1.65 V @ 50 Ω

output current monitor—SMA connector

DC offset ~ 100 mV @ 50 Ω

current sensitivity 0.1 V/A @ 50 Ω / can be modified

100 MHz BW

output voltage monitor—SMA connector


voltage sensitivity 50mV/V @ 50 Ω / can be modified

100 MHz bandwidth

micro-USB connector

communication with PC, virtual COM port

power supply, if current consumption of the driver does not exceed 0.5 A (USB 2.0 standard)

DC power jack 2.5/5.5

power supply, if driver requires more than 0.5A (USB 2.0 standard), or If the PC is not used (configuration is restored from the memory)

Size: 1/17

PCB dimensions 60x50x15mm (width×height×depth), including connectors

Developed with, and manufactered by:

Optically Immersed 1.95 µm LED in heat-sink optimized housing LED19Su, LED19Sr Peak wavelength λmax µm 1.9

Pulse power Ppulsed mW Drive current 1 A, 2 % duty cycle 6 Quasi-CW power PQCW mW Drive current 0.4 A, 50% duty cycle 2

CW power PCW mW Drive current 0.2 A 0.6

Code Emission size, mm

Lens material

Far-field pattern FWHM, deg.

Optical axis deviation, deg.

Optical power deviation, %

Operation conditions, 0C

Lifetime, hrs Polarity

LED19Su/Sr ∅ 3.2 Si ∼15 ≤5 ±25 -25÷+60 >80 000 Red wire – positive, Black wire – negative

Prod

uct v

iew

D 3.2D 4.8D 5.6

1.3

4.6 2.

90.

4

jjjLE

D19

Su

M5*0.5D 3.2

0.5

4.8

0.5

LED

19Sr

Feat

ures

Growth of narrow gap semiconductor alloys onto n+-GaSb substrate; Flip-chip design of LEDs; Optical coupling through

the use of chalcogenide glasses and Si lenses with antireflection coating

3-fold increased LED output power; Beam collimation within~15 deg; Low serial resistance; Small on-off time (tenths of

ns); Low power consumption (≤0.1 W)

Emission beam divergence is small and thus we recommend adjusting LED position regarding to the detector system before final evaluation/use of the devices. We recommend if possible using low duty cycle mode of operation with I<0.5×Imax so that

higher efficiency and long term stability of a LED are achieved. Data are valid for 22ºC and LED attached to a heatsink. Heatsink is important for LED operation especially in the CW mode.

L-I a

nd I-

V c

hara

cter

istic

s and

em

issio

nsp

ectra

0 200 400 600 800 10000

1

2

3

4

5

622oC, T=255 µs

τ= 5 µs 20 µs 50 µs 100 µs 235 µs

Pulse

d po

wer,

mW

Current, mA0.4 0.6 0.8 1.0

0

200

400

600

800

1000

Voltage, V

Curre

nt, m

A

1.7 1.8 1.9 2.0 2.10.0

0.5

1.0

H2O absorption

60oC 40oC 20oC 0oC -20oC

Nor

mali

zed

Inte

nsity

Wavelengh, µm

τT

Time

Driv

e cur

rent

Out

put p

ower

and

pea

k w

avel

engt

h vs

te

mpe

ratu

re, f

ar-f

ield

pat

tern

and

m

axim

al c

urre

nt v

s ope

ratio

n co

nditi

ons

-20 -10 0 10 20 30 40 50 60

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.01 0.1 1100

200

300

400

500

600700800900

1000

2000

1.86

1.88

1.90

1.92

1.94

1.96

Power

Powe

r at f

ixed

curre

nt, a

rb.u

n.

Temperature, oC-40 -20 0 20 40

0.0

0.2

0.4

0.6

0.8

1.0

Inte

nsity

, arb

.un.

Angle, deg.

attached to a heatsink without a heatsink

Duty cycle = τ/T,τ - pulse duration,T - pulse period

Max

imal

curre

nt I

max

, m

A

Duty cycle

Wavelength

Peak

wav

eleng

th, µ

m

Product specifications are subject to change without prior notice due to improvements or other reasons. Updated 21.09.18

www.boselec.com | [email protected] | 617-566-3821

Optically Immersed 2.15 µm LED in heat-sink optimized housing LED21Su, LED21Sr Peak wavelength λmax µm 2.15

Pulse power Ppulsed mW Drive current 1 A, 2 % duty cycle 10 Quasi-CW power PQCW mW Drive current 0.4 A, 50% duty cycle 3

CW power PCW mW Drive current 0.2 A 1.2


Lens material

Far-field pattern FWHM, deg.


Optical power deviation, %


Lifetime, hrs Polarity

LED21Su/Sr ∅ 3.2 Si ∼15 ≤5 ±25 -25÷+60 >80 000 Red wire – positive, Black wire – negative

Prod

uct v

iew D 3.2

D 4.8D 5.6

1.3

4.6 2.

90.

4

jjjLE

D21

Su

M5*0.5D 3.2

0.5

4.8

0.5

LED

21Sr

Growth of narrow gap semiconductor alloys onto n+-GaSb substrate; Flip-chip design of LEDs; Optical coupling through

the use of chalcogenide glasses and Si lenses with antireflection coating

3-fold increased LED output power; Beam collimation within~15 deg; Low serial resistance; Small on-off time (tenths of

ns); Low power consumption (≤0.1 W)

Feat

ures

Emission beam divergence is small and thus we recommend adjusting LED position regarding to the detector system before final evaluation/use of the devices. We recommend if possible using low duty cycle mode of operation with I<0.5×Imax so that

higher efficiency and long term stability of a LED are achieved. Data are valid for 22ºC and LED attached to a heatsink. Heatsink is important for LED operation especially in the CW mode.

L-I a

nd I-

V c

hara

cter

istic

s and

em

issio

nsp

ectra

0 200 400 600 800 10000

1

2

3

4

5

6

7

8

9

10

22oC, T=255 µsτ=

5 µs 20 µs 50 µs 100 µs 235 µs

Pulse

d po

wer

, mW

Current, mA0.3 0.4 0.5 0.6 0.7 0.8 0.90

200

400

600

800

1000

Voltage, V

Curr

ent,

mA

1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.50.0

0.5

1.0 60oC 40oC 20oC 0oC-20oC

Nor

mali

zed

Inte

nsity

Wavelengh, µm

τ

T

Time

Driv

e cu

rren

t

Out

put p

ower

and

pea

k w

avele

ngth

vs

tem

pera

ture

, far

-field

pat

tern

and

m

axim

al cu

rren

t vs o

pera

tion

cond

ition

s

-20 -10 0 10 20 30 40 50 60

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.01 0.1 1100

200

300

400

500

600700800900

1000

2000

2.08

2.10

2.12

2.14

2.16

2.18

2.20 Power

Pow

er a

t fix

. cur

rent

, arb

.un.

Temperature, oC-40 -20 0 20 40

0.0

0.2

0.4

0.6

0.8

1.0

Inte

nsity

, arb

.un.

Angle, deg.

attached to a heatsink without a heatsink

Duty cycle = τ/T,τ - pulse duration,T - pulse period

Max

imal

curr

ent

Imax

, m

A

Duty cycle

Wavelength

Peak

wav

elen

gth,

µm



1

Optically Immersed 3.0 µm LED in heatsink optimized housing LED30Su, LED30Sr

TE cooled Optically Immersed 3.0 µm LED LED30TO8TEC

Peak wavelength µm 2.97±0.05 1

Pulse power mW Drive current 1 A, 0.02 duty cycle 0.15÷0.18

QuasiCW power mW Drive current 0.3 A, 0.5 duty cycle 0.05÷0.06

CW power mW Drive current 0.2 A 0.03÷0.04

Cutoff frequency MHz 20 2


Weight, g

Optical components

Farfield pattern FWHM, deg.


Optical power deviation in lot, %


Lifetime, hrs

LED30Su LED30Sr ∼0.4 Si lens 60÷+120 3

LED30 TO8TEC

∅ 3.2∼10 Si lens and output sapphire

window D=6mm

∼15 ≤5 ±25 60÷+85 4

>80 0005

D 3.2D 4.8D 5.6

1.3

4.6 2.

90.

4

M5*0.5D 3.2

0.5

4.8

0.5

LE

D3

0S

u

Pin assignment: red wire or long wire and red point on house positive

LE

D3

0S

r


Pin assignment LED30TO8TEC12 P

rodu

ct v

iew

D15.4±0.1

12.3

5±0.

1

D64.35

7.8

D0.45

6.4

thread 4-40 UNC

LED chipLens

TEC

1 TEC negative; 3 TEC positive; 4 LED negative; 6 LED pozitive;

7, 9 thermosensor;11 ⊥ (House)

Original growth of narrow gap semiconductor alloysonto n+InAs substrate;Flipchip design of LEDs;Optical coupling through the use of chalcogenideglasses and Si lenses with antireflection coating

3fold increased LED output power;Beam collimation;Small onoff time (tenths of ns);Low power consumption (≤0.1 W)

Fea

ture

s

Emission beam divergence is small and thus we recommend adjusting LED position regarding to the detector system before final evaluation/use of the devices. We recommend if possible using low duty cycle mode of operation with I<0.5×Imax so that higher efficiency and long term stability of a LED are achieved. Data are valid for LED attached to a heatsink and thermostabilized at 22oC. Heatsink is essential for TEC operation!

No

tes

1 process 6189 2 according to estimation 3 devices have passed through 15 thermo cycles : (20oC, 8 hrs) transition period of 30 min – (+125oC, 8 hrs) without changes in specifications. Valid for devices produced since 01.2013 4 devices have passed through 15 thermo cycles : (60oC, 30 min) transition period of 30 min (+85oC, 30 min) without changes in specifications. Valid for devices produced since 01.2013 5 – according to accelerated degradation stress at CW drive current 0.2 A



2

Em

issi

on

spec

tra

2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.00.01

0.1

1

drive current 0.5 A,d.c.=0.02

100oC

80oC

60oC

40oC

22oC

0oC

25oC

Inte

nsity

Wavelength, µm2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0

0.0

0.5

1.0

No

rmal

ized

Inte

nsity

Wavelength, µm

Po

wer

and

pea

k w

avel

eng

th

vs. t

empe

ratu

re; I

– V

cur

ve

20 10 0 10 20 30 40 50 60 70 80 90 1000.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.90

2.95

3.00

3.05

3.10

3.15

3.20

3.25

3.30

Power

Po

wer

at f

ix. c

urre

nt, a

rb.u

n.

Temperature, oC

Wavelength

Pea

k w

avel

engt

h, µ

m0.1 0.2 0.3 0.4 0.5

0

200

400

600

800

1000

90 oC

60 oC

45 oC

21 oC

0 oC

25 oC

Voltage, VC

urre

nt, m

A

Out

put

pow

er a

nd d

rive

curr

ent

vs o

pera

tion

cond

itio

ns

0 200 400 600 800 10000

50

100

150

200

0.01 0.1 1100

200

300

400

500

600700800900

1000

22oC, d.c.= 0.02 (τ= 20 µs, T=1 ms) 0.25 (τ=250 µs, T=1 ms) 0.5 (τ=500 µs, T=1 ms) 1 (τ=970 µs, T=1 ms)

Pul

sed

pow

er, µ

W

Current, mA

τT

Time

Driv

e cu

rren

t

τ>0.5 ms consider as CW mode

τ<0.5 ms, T<8 ms Maximum Current Safe Current

duty cycle (d.c.) = τ/T,τ pulse duration,T pulse period

Driv

e cu

rren

t Im

ax ,

mA

Duty cycle

Radiation beam pattern in plane orthogonal to beam axis at several distances from LED

Angle distribution of output power

PD signal (PDxxSr/Su) vs. distance from activated LED

Far

fie

ld c

hara

cter

izat

ion

0

2

4

6

8

10

12

14

16

18

20

0 2 4 6 8 10 12 14 16 18 20

Distance L=0 cm

Y, m

m

0

5E5

1E6

1.5E6

2E6

2.5E6

3.5E6

Distance L=10 mm

5E43E55.5E58E51.05E61.3E61.55E61.8E6

0 2 4 6 8 10 12 14 16 18 200

2

4

6

8

10

12

14

16

18

20Distance L=15 mm

Y, m

m

X, mm

2.5E41.5E53.25E55E56.75E58.5E51.025E61.2E6

Distance L=30 mm

X, mm

4.375E4

2.5E4

9.375E4

1.625E5

2.313E5

3E5

40 20 0 20 400.0

0.5

1.0

No

rmal

ized

Po

wer

Angle, deg.1 10 100 1000

0.01

0.1

1

LED current 10 mA LED current 600 mA

Sig

nal,

arb.

un.

Distance, mm


3

Time dependence of the output power for several values of d.c. and currents (LED attached to a heatsink at room temperature).

“Safe” operation mode “Maximum current” operation mode

Pul

se o

pera

tion

(d.c

.=0

.06

)

0 100 200 300 400 5000.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

τ=15 µs,T=250 µs τ=30 µs,T=500 µs τ=60 µs,T=1000 µs τ=120 µs,T=2000 µs τ=250 µs,T=4000 µs τ=500 µs,T=8000 µs

I=500 mA, duty cycle=0.06

Sig

nal,

arb.

un.

Time, µs0 100 200 300 400 500

0.0

0.1

0.2

0.3

0.4

0.5

0.6I=1000 mA, duty cycle=0.06

Time, µs

Qua

si C

W m

ode

(d.

c.=

0.5

)

0 200 400 600 800 10000.00

0.02

0.04

0.06

0.08

0.10

0.12

I=150 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22I=300 mA, T= 1 ms

Time, µs

СW

mo

de (

d.c.

=1)

0 200 400 600 800 10000.00

0.02

0.04

0.06

0.08

I=100 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs 970 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16I=200 mA, T= 1 ms

Time, µs


4

Mounted TEC H, mm ∆Tmax, K Qmax,W Imax, A Umax, V Rt, K/W

1MC06024/115 2.6 70 1.86 1.0 2.78 1.07T

herm

oel

ectr

ic c

oo

ling

mo

dule

dat

ashe

et

Data for Thot=300 K, from www.tecmicrosystems.com; www.rmtltd.ru

Type TB04103

T, oC R, kΩ T, oC R, kΩ

60 1134.5 15 12.44

55 762.4 20 10.00

50 521.6 25 8.09

45 362.8 25 8.09

40 256.3 30 6.60

35 183.8 35 5.41

30 133.6 40 4.47

25 98.3 45 3.71

20 73.3 50 3.10

15 55.2 55 2.61

10 42.1 60 2.20

5 32.4 65 1.87

0 25.2 70 1.59

5 19.7 75 1.37

The

rmis

tor

spec

ifica

tion

10 15.6 80 1.18

30 20 10 0 10 20 30 40 50 60 70 80

240 260 280 300 320 340 3601

10

100 Termistor calibration

Temperature, oC

Rt=R

t0exp(β(T

0T)/(T*T

0)), where

Rt0

Resistivity at standard temperature (T0=293K),

β =3691 K Beta constant

Res

ista

nce,

kO

hm

Temperature, K

Po

ssib

le T

EC

he

atsi

nk v

iew


1



Peak wavelength µm 3.4±0.05 @22 0C






Weight, g

Optical components





Lifetime, hrs


LED34 TO8TEC


window D=6mm

∼15 ≤5 ±25 60÷+85 3

>80 0004

D 3.2D 4.8D 5.6

1.3

4.6 2.

90.

4

M5*0.5D 3.2

0.5

4.8

0.5

LE

D3

4S

u


LE

D3

4S

r



rodu

ct v

iew

D15.4±0.1

12.3

5±0.

1

D64.35

7.8

D0.45

6.4

thread 4-40 UNC

LED chipLens

TEC





Fea

ture

s


No

tes

1 according to estimation 2 devices have passed through 15 thermo cycles : (20oC, 8 hrs) transition period of 30 min – (+125oC, 8 hrs) without changes in specifications. Valid for devices produced since 01.2013. Operation conditions: 25÷+60

0C for old version LEDs. 3 devices have passed through 15 thermo cycles : (60oC, 30 min) transition period of 30 min (+85oC, 30 min) without changes in specifications. Valid for devices produced since 01.2013. Operation conditions: 25÷+60

0C for old version LEDs. 4 – according to accelerated degradation stress at CW drive current 0.2 A



2

Em

issi

on

spec

tra

2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4

0.01

0.1

1

CO2

absorption

drive current 0.5 A

100oC

80oC

60oC

40oC

22oC

0oC

25oC

Inte

nsity

Wavelengh, µm2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2

0.0

0.5

1.0

waf. 152No

rmal

ized

Inte

nsity

Wavelengh, µm

Po

wer

and

pea

k w

avel

eng

th v

s.

tem

pera

ture

; I –

V c

urve

20 10 0 10 20 30 40 50 60 70 80 90 100

0.4

0.6

0.8

1.0

1.2

1.4

1.6

3.25

3.30

3.35

3.40

3.45

3.50

3.55

3.60

Power

Po

wer

at

fix. c

urre

nt, a

rb.u

n.

Temperature, oC

Wavelength

Pea

k w

avel

eng

th, µ

m0.1 0.2 0.3 0.4 0.5 0.6

0

200

400

600

800

1000

100oC

80oC

60oC

40oC

22oC

0oC

25oC

Voltage, VC

urr

ent,

mA

Out

put

pow

er a

nd d

rive

curr

ent

vs o

pera

tion

cond

itio

ns

0 200 400 600 800 10000

100

200

300

400

0.01 0.1 1100

200

300

400

500

600700800900

100022oC, d.c.=

0.02 (τ= 20 µs, T=1 ms) 0.25 (τ=250 µs, T=1 ms) 0.5 (τ=500 µs, T=1 ms) 1 (τ=970 µs, T=1 ms)

Pu

lsed

po

wer

, µW

Current, mA

τT

Time

Driv

e cu

rren

t




Driv

e cu

rren

t Im

ax ,

mA

Duty cycle




Far

fie

ld c

hara

cter

izat

ion

0

2

4

6

8

10

12

14

16

18

20

0 2 4 6 8 10 12 14 16 18 20

Distance L=0 cm

Y, m

m

0

5E5

1E6

1.5E6

2E6

2.5E6

3.5E6

Distance L=10 mm

5E43E55.5E58E51.05E61.3E61.55E61.8E6

0 2 4 6 8 10 12 14 16 18 200

2

4

6

8

10

12

14

16

18

20Distance L=15 mm

Y, m

m

X, mm

2.5E41.5E53.25E55E56.75E58.5E51.025E61.2E6

Distance L=30 mm

X, mm

4.375E4

2.5E4

9.375E4

1.625E5

2.313E5

3E5

40 20 0 20 400.0

0.5

1.0

No

rmal

ized

Po

wer

Angle, deg.1 10 100 1000

0.01

0.1

1


Sig

nal,

arb.

un.

Distance, mm


3



Pul

se o

pera

tion

(d.c

.=0

.06

)

0 100 200 300 400 5000.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8


I=500 mA, Duty cycle=0.06

Sig

nal,

arb.

un.

Time, µs0 100 200 300 400 500

0.0

0.2

0.4

0.6

0.8

1.0

1.2I=1000 mA, Duty cycle=0.06

Time, µs

Qua

si C

W m

ode

(d.

c.=

0.5

)

0 200 400 600 800 10000.0

0.1

0.2

0.3

0.4

I=150 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6I=300 mA, T= 1 ms

Time, µs

СW

mo

de (

d.c.

=1)

0 200 400 600 800 10000.00

0.05

0.10

0.15

0.20

0.25

0.30

I=100 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs 970 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.0

0.1

0.2

0.3

0.4

0.5I=200 mA, T= 1 ms

Time, µs


4


1MC06024/115 2.6 70 1.86 1.0 2.78 1.07T

herm

oel

ectr

ic c

oo

ling

mo

dule

dat

ashe

et


Type TB04103


60 1134.5 15 12.44

55 762.4 20 10.00

50 521.6 25 8.09

45 362.8 25 8.09

40 256.3 30 6.60

35 183.8 35 5.41

30 133.6 40 4.47

25 98.3 45 3.71

20 73.3 50 3.10

15 55.2 55 2.61

10 42.1 60 2.20

5 32.4 65 1.87

0 25.2 70 1.59

5 19.7 75 1.37

The

rmis

tor

spec

ifica

tion

10 15.6 80 1.18

30 20 10 0 10 20 30 40 50 60 70 80

240 260 280 300 320 340 3601

10


Temperature, oC

Rt=R

t0exp(β(T

0T)/(T*T

0)), where

Rt0



Res

ista

nce,

kO

hm

Temperature, K

Po

ssib

le T

EC

he

atsi

nk v

iew


1









Weight, g

Optical components





Lifetime, hrs


LED36 TO8TEC


window D=6mm

∼15 ≤5 ±25 60÷+85 3

>80 0004

D 3.2D 4.8D 5.6

1.3

4.6 2.

90.

4

M5*0.5D 3.2

0.5

4.8

0.5

LE

D3

6S

u


LE

D3

6S

r



rodu

ct v

iew

D15.4±0.1

12.3

5±0.

1

D64.35

7.8

D0.45

6.4

thread 4-40 UNC

LED chipLens

TEC





Fea

ture

s


No

tes






2

Em

issi

on

spec

tra

2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0

0.01

0.1

1

CO2

absorption

drive current 0.5 A

100oC

80oC

60oC

40oC

22oC

0oC

25oCIn

tens

ity

Wavelengh, µm2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8

0.0

0.5

1.0

No

rmal

ized

Inte

nsity

Wavelengh, µm

Po

wer

and

pea

k w

avel

eng

th

vs. t

empe

ratu

re; I

– V

cur

ve

20 10 0 10 20 30 40 50 60 70 80 90 1000.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

3.40

3.45

3.50

3.55

3.60

3.65

3.70

3.75

3.80

3.85 Power

Po

wer

at f

ix. c

urre

nt, a

rb.u

n.

Temperature, oC

Wavelength

Pea

k w

avel

engt

h, µ

m

0.0 0.1 0.2 0.3 0.4 0.50

200

400

600

800

1000

100oC

80oC

60oC

40oC

22oC

0oC

25oC

Voltage, VC

urre

nt, m

A

Out

put

pow

er a

nd d

rive

curr

ent

vs o

pera

tion

cond

itio

ns

0 200 400 600 800 10000

50

100

150

200

250

300

0.01 0.1 1100

200

300

400

500

600700800900


Pu

lsed

po

wer

, µW

Current, mA

τT

Time

Driv

e cu

rren

t




Driv

e cu

rren

t Im

ax ,

mA

Duty cycle




Far

fie

ld c

hara

cter

izat

ion

0

2

4

6

8

10

12

14

16

18

20

0 2 4 6 8 10 12 14 16 18 20

Distance L=0 cm

Y, m

m

0

5E5

1E6

1.5E6

2E6

2.5E6

3.5E6

Distance L=10 mm

5E43E55.5E58E51.05E61.3E61.55E61.8E6

0 2 4 6 8 10 12 14 16 18 200

2

4

6

8

10

12

14

16

18

20Distance L=15 mm

Y, m

m

X, mm

2.5E41.5E53.25E55E56.75E58.5E51.025E61.2E6

Distance L=30 mm

X, mm

4.375E4

2.5E4

9.375E4

1.625E5

2.313E5

3E5

40 20 0 20 400.0

0.5

1.0

No

rmal

ized

Po

wer

Angle, deg.1 10 100 1000

0.01

0.1

1


Sig

nal,

arb.

un.

Distance, mm


3



Pul

se o

pera

tion

(d.c

.=0

.06

)

0 100 200 300 400 5000.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8



Sig

nal,

arb.

un.

Time, µs0 100 200 300 400 500

0.0

0.2

0.4

0.6

0.8

1.0


Time, µs

Qua

si C

W m

ode

(d.

c.=

0.5

)

0 200 400 600 800 10000.0

0.1

0.2

0.3

0.4

I=150 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6I=300 mA, T= 1 ms

Time, µs

СW

mo

de (

d.c.

=1)

0 200 400 600 800 10000.00

0.05

0.10

0.15

0.20

0.25

0.30

I=100 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs 970 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.0

0.1

0.2

0.3

0.4

0.5I=200 mA, T= 1 ms

Time, µs


4


1MC06024/115 2.6 70 1.86 1.0 2.78 1.07T

herm

oel

ectr

ic c

oo

ling

mo

dule

dat

ashe

et


Type TB04103


60 1134.5 15 12.44

55 762.4 20 10.00

50 521.6 25 8.09

45 362.8 25 8.09

40 256.3 30 6.60

35 183.8 35 5.41

30 133.6 40 4.47

25 98.3 45 3.71

20 73.3 50 3.10

15 55.2 55 2.61

10 42.1 60 2.20

5 32.4 65 1.87

0 25.2 70 1.59

5 19.7 75 1.37

The

rmis

tor

spec

ifica

tion

10 15.6 80 1.18

30 20 10 0 10 20 30 40 50 60 70 80

240 260 280 300 320 340 3601

10


Temperature, oC

Rt=R

t0exp(β(T

0T)/(T*T

0)), where

Rt0



Res

ista

nce,

kO

hm

Temperature, K

Po

ssib

le T

EC

he

atsi

nk v

iew


1









Weight, g

Optical components





Lifetime, hrs


LED38 TO8TEC


window D=6mm

∼15 ≤5 ±25 60÷+85 3

>100 0004

D 3.2D 4.8D 5.6

1.3

4.6 2.

90.

4

M5*0.5D 3.2

0.5

4.8

0.5

LE

D3

8S

u


LE

D3

8S

r



rodu

ct v

iew

D15.4±0.1

12.3

5±0.

1

D64.35

7.8

D0.45

6.4

thread 4-40 UNC

LED chipLens

TEC





Fea

ture

s


No

tes






2

Em

issi

on

spec

tra

2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0

0.01

0.1

1CO

2

absorption

100oC

80oC

60oC

40oC

22oC

0oC

25oC

drive current 0.5 A

Inte

nsity

Wavelengh, µm2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0

0.0

0.5

1.0

CO2

absorption

waf. 201No

rmal

ized

Inte

nsity

Wavelengh, µm

Po

wer

and

pea

k w

avel

eng

th

vs. t

empe

ratu

re; I

– V

cur

ve

20 10 0 10 20 30 40 50 60 70 80 90 1000.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

3.65

3.70

3.75

3.80

3.85

3.90

3.95

4.00

4.05

Power

Po

wer

at

fix. c

urr

ent,

arb

.un.

Temperature, oC

Wavelength

Pea

k w

avel

engt

h, µ

m0.0 0.1 0.2 0.3 0.4 0.50

200

400

600

800

1000

100oC

80oC

60oC

40oC

22oC

0oC

25oC

Voltage, VC

urre

nt, m

A

Out

put

pow

er a

nd d

rive

curr

ent

vs o

pera

tion

cond

itio

ns

0 200 400 600 800 10000

50

100

150

200

0.01 0.1 1100

200

300

400

500

600700800900

100022oC, d.c.=

0.02 (τ= 20 µs, T=1 ms) 0.25 (τ=250 µs, T=1 ms) 0.5 (τ=500 µs, T=1 ms) 1 (τ=970 µs, T=1 ms)

Pul

sed

pow

er, µ

W

Current, mA

τT

Time

Driv

e cu

rren

t




Driv

e cu

rren

t Im

ax ,

mA

Duty cycle




Far

fie

ld c

hara

cter

izat

ion

0

2

4

6

8

10

12

14

16

18

20

0 2 4 6 8 10 12 14 16 18 20

Distance L=0 cm

Y, m

m

0

5E5

1E6

1.5E6

2E6

2.5E6

3.5E6

Distance L=10 mm

5E43E55.5E58E51.05E61.3E61.55E61.8E6

0 2 4 6 8 10 12 14 16 18 200

2

4

6

8

10

12

14

16

18

20Distance L=15 mm

Y, m

m

X, mm

2.5E41.5E53.25E55E56.75E58.5E51.025E61.2E6

Distance L=30 mm

X, mm

4.375E4

2.5E4

9.375E4

1.625E5

2.313E5

3E5

40 20 0 20 400.0

0.5

1.0

No

rmal

ized

Po

wer

Angle, deg.1 10 100 1000

0.01

0.1

1


Sig

nal,

arb.

un.

Distance, mm


3



Pul

se o

pera

tion

(d.c

.=0

.06

)

0 100 200 300 400 5000.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40



Sig

nal,

arb.

un.

Time, µs0 100 200 300 400 500

0.0

0.1

0.2

0.3

0.4


waf.200

Time, µs

Qua

si C

W m

ode

(d.

c.=

0.5

)

0 200 400 600 800 10000.00

0.05

0.10

0.15

0.20

I=150 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs 970 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.00

0.05

0.10

0.15

0.20

0.25

0.30

waf.200

I=300 mA, T= 1 ms

Time, µs

СW

mo

de (

d.c.

=1)

0 200 400 600 800 10000.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

I=100 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs 970 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.00

0.05

0.10

0.15

0.20

0.25

waf.200

I=200 mA, T= 1 ms

Time, µs


4


1MC06024/115 2.6 70 1.86 1.0 2.78 1.07T

herm

oel

ectr

ic c

oo

ling

mo

dule

dat

ashe

et


Type TB04103


60 1134.5 15 12.44

55 762.4 20 10.00

50 521.6 25 8.09

45 362.8 25 8.09

40 256.3 30 6.60

35 183.8 35 5.41

30 133.6 40 4.47

25 98.3 45 3.71

20 73.3 50 3.10

15 55.2 55 2.61

10 42.1 60 2.20

5 32.4 65 1.87

0 25.2 70 1.59

5 19.7 75 1.37

The

rmis

tor

spec

ifica

tion

10 15.6 80 1.18

30 20 10 0 10 20 30 40 50 60 70 80

240 260 280 300 320 340 3601

10


Temperature, oC

Rt=R

t0exp(β(T

0T)/(T*T

0)), where

Rt0



Res

ista

nce,

kO

hm

Temperature, K

Po

ssib

le T

EC

he

atsi

nk v

iew


1



Peak wavelength µm 4.15÷4.2 @22 0C






Weight, g

Optical components





Lifetime, hrs


LED42 TO8TEC


window D=6mm

∼15 ≤5 ±25 60÷+85 3

>100 0004

D 3.2D 4.8D 5.6

1.3

4.6 2.

90.

4

M5*0.5D 3.2

0.5

4.8

0.5

LE

D4

2S

u


LE

D4

2S

r



rodu

ct v

iew

D15.4±0.1

12.3

5±0.

1

D64.35

7.8

D0.45

6.4

thread 4-40 UNC

LED chipLens

TEC





Fea

ture

s


No

tes






2

Em

issi

on

spec

tra

3.0 3.5 4.0 4.5 5.0

0.01

0.1

1

CO2

absorption

drive current 0.5 A

100oC

80oC

60oC

40oC

22oC

0oC

25oC

Inte

nsity

Wavelengh, µm3.0 3.5 4.0 4.5 5.0

0.0

0.2

0.4

0.6

0.8

1.0

waf. 445

No

rmal

ized

Inte

nsity

Wavelengh, µm

Po

wer

and

pea

k w

avel

eng

th v

s.

tem

pera

ture

; I –

V c

urve

20 10 0 10 20 30 40 50 60 70 80 90 1000.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

4.00

4.05

4.10

4.15

4.20

4.25

4.30

4.35

4.40

4.45

Power

Po

wer

at

fix. c

urre

nt, a

rb.u

n.

Temperature, oC

Wavelength

Pea

k w

avel

eng

th, µ

m0.0 0.1 0.2 0.3 0.4 0.5 0.60

200

400

600

800

1000

100oC

80oC

60oC

40oC

22oC

0oC

25oC

Voltage, VC

urr

ent,

mA

Out

put

pow

er a

nd d

rive

curr

ent

vs o

pera

tion

cond

itio

ns

0 200 400 600 800 10000

20

40

60

80

100

0.01 0.1 1100

200

300

400

500

600700800900


Pu

lsed

po

wer

, µW

Current, mA

τT

Time

Driv

e cu

rren

t




Driv

e cu

rren

t Im

ax ,

mA

Duty cycle




Far

fie

ld c

hara

cter

izat

ion

0

2

4

6

8

10

12

14

16

18

20

0 2 4 6 8 10 12 14 16 18 20

Distance L=0 cm

Y, m

m

0

5E5

1E6

1.5E6

2E6

2.5E6

3.5E6

Distance L=10 mm

5E43E55.5E58E51.05E61.3E61.55E61.8E6

0 2 4 6 8 10 12 14 16 18 200

2

4

6

8

10

12

14

16

18

20Distance L=15 mm

Y, m

m

X, mm

2.5E41.5E53.25E55E56.75E58.5E51.025E61.2E6

Distance L=30 mm

X, mm

4.375E4

2.5E4

9.375E4

1.625E5

2.313E5

3E5

40 20 0 20 400.0

0.5

1.0

No

rmal

ized

Po

wer

Angle, deg.1 10 100 1000

0.01

0.1

1


Sig

nal,

arb.

un.

Distance, mm


3



Pul

se o

pera

tion

(d.c

.=0

.06

)

0 100 200 300 400 5000.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40



Sig

nal,

arb.

un.

Time, µs0 100 200 300 400 500

0.0

0.1

0.2

0.3

0.4

0.5 I=1000 mA, Duty cycle=0.06

waf.445

Time, µs

Qua

si C

W m

ode

(d.

c.=

0.5

)

0 200 400 600 800 10000.00

0.05

0.10

0.15

0.20

I=150 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs 970 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.00

0.05

0.10

0.15

0.20

0.25

0.30

waf.445

I=300 mA, T= 1 ms

Time, µs

СW

mo

de (

d.c.

=1)

0 200 400 600 800 10000.00

0.05

0.10

0.15

I=100 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs 970 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.00

0.05

0.10

0.15

0.20

0.25

waf.445

I=200 mA, T= 1 ms

Time, µs


4


1MC06024/115 2.6 70 1.86 1.0 2.78 1.07T

herm

oel

ectr

ic c

oo

ling

mo

dule

dat

ashe

et


Type TB04103


60 1134.5 15 12.44

55 762.4 20 10.00

50 521.6 25 8.09

45 362.8 25 8.09

40 256.3 30 6.60

35 183.8 35 5.41

30 133.6 40 4.47

25 98.3 45 3.71

20 73.3 50 3.10

15 55.2 55 2.61

10 42.1 60 2.20

5 32.4 65 1.87

0 25.2 70 1.59

5 19.7 75 1.37

The

rmis

tor

spec

ifica

tion

10 15.6 80 1.18

30 20 10 0 10 20 30 40 50 60 70 80

240 260 280 300 320 340 3601

10


Temperature, oC

Rt=R

t0exp(β(T

0T)/(T*T

0)), where

Rt0



Res

ista

nce,

kO

hm

Temperature, K

Po

ssib

le T

EC

he

atsi

nk v

iew


1

Optically Immersed 4.7 µm LED in heatsink optimized housing LED47 Sr/Su/Cy



LED47Sr/Su/Cy LED47TO8TEC

Pulse power µW Drive current 1 A, 0.02 duty cycle 15÷18 13÷15

QuasiCW power µW Drive current 0.3 A, 0.5 duty cycle 6.5÷8 5.5÷7

CW power µW Drive current 0.2 A 4.5÷5.5 3.8÷4.7



Weight, g

Optical components





Lifetime, hrs

LED47 Sr/Su/Cy ∼0.4 Si lens

LED47 TO8TEC


window D=6mm

∼15 ≤5 ±25 60÷+85 >100 000

4.8±

0.1

D5 0-0.05

D3.2±.05

0.3

M5*0.5D 3.2

0.5

4.8

0.5

LE

D4

7Cy


LE

D4

7Sr


Pin assignment LED47TO8TEC12

Pro

duct

vie

w

10.5

±0.1

7.8

D0.45

6.4

thread 4-40 UNC

LED chipTEC

Lens

D15.4±0.1D6

2.5





Fea

ture

s


No

tes

1 according to estimation



2

Em

issi

on

spec

tra

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

0.01

0.1

1

20 oC

0 oC

20 oC

40 oC

60 oC

80 oC

CO2 absorption

drive current: pulsed, 1 A

Inte

nsity

Wavelengh, µm3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

0.0

0.2

0.4

0.6

0.8

1.0 20 oC

0 oC

20 oC

40 oC

60 oC

80 oC

waf. 825

No

rmal

ized

Inte

nsity

Wavelengh, µm

Po

wer

vs.

tem

pera

ture

;

I – V

cur

ve

20 10 0 10 20 30 40 50 60 70 800.4

0.6

0.8

1.0

1.2

1.4

Po

wer

at f

ix. c

urre

nt, a

rb.u

n.

Temperature, oC0.0 0.1 0.2 0.3 0.4 0.50

200

400

600

800

1000

waf. 825

20 oC

0 oC

20 oC

40 oC

60 oC

80 oC

Voltage, V

Cu

rren

t, m

A

Out

put

pow

er a

nd d

rive

curr

ent

vs o

pera

tion

cond

itio

ns

0 200 400 600 800 10000

2

4

6

8

10

12

14

16

18

0.01 0.1 1100

200

300

400

500

600700800900


Pul

sed

pow

er, µ

W

Current, mA

τT

Time

Driv

e cu

rren

t




Driv

e cu

rren

t Im

ax ,

mA

Duty cycle


3



Pul

se o

pera

tion

(d.c

.=0

.06

)

0 200 400 600 800 10000.00

0.02

0.04

0.06

0.08

τ=15 µs,T=250 µs τ=30 µs,T=500 µs τ=60 µs,T=1000 µs τ=120 µs,T=2000 µs τ=250 µs,T=4000 µs through sapphire window


Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.00

0.05

0.10


through sapphire window

waf.488

Time, µs

Qua

si C

W m

ode

(d.

c.=

0.5

)

0 200 400 600 800 10000.000

0.005

0.010

0.015

0.020

0.025

0.030

I=150 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs 970 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.00

0.01

0.02

0.03

0.04

0.05

waf.488

I=300 mA, T= 1 ms

Time, µs

СW

mo

de (

d.c.

=1)

0 200 400 600 800 10000.000

0.005

0.010

0.015

0.020

I=100 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs 970 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0.035

waf.488

I=200 mA, T= 1 ms

Time, µs


4


1MC06024/115 2.6 70 1.86 1.0 2.78 1.07T

herm

oel

ectr

ic c

oo

ling

mo

dule

dat

ashe

et


Type TB04103


60 1134.5 15 12.44

55 762.4 20 10.00

50 521.6 25 8.09

45 362.8 25 8.09

40 256.3 30 6.60

35 183.8 35 5.41

30 133.6 40 4.47

25 98.3 45 3.71

20 73.3 50 3.10

15 55.2 55 2.61

10 42.1 60 2.20

5 32.4 65 1.87

0 25.2 70 1.59

5 19.7 75 1.37

The

rmis

tor

spec

ifica

tion

10 15.6 80 1.18

30 20 10 0 10 20 30 40 50 60 70 80

240 260 280 300 320 340 3601

10


Temperature, oC

Rt=R

t0exp(β(T

0T)/(T*T

0)), where

Rt0



Res

ista

nce,

kO

hm

Temperature, K

Po

ssib

le T

EC

he

atsi

nk v

iew


1

Optically Immersed 5.5 µm LED in heatsink optimized housing LED55 Sr/Su/Cy



LED55Sr/Su/Cy LED55TO8TEC

Pulse power µW Drive current 1 A, 0.02 duty cycle 5÷7 4÷5.6

QuasiCW power µW Drive current 0.3 A, 0.5 duty cycle 2.2÷2.7 1.8÷2.2

CW power µW Drive current 0.2 A 1.5÷1.8 1.2÷1.4



Weight, g

Optical components





Lifetime, hrs

LED55 Sr/Su/Cy ∼0.4 Si lens

LED55 TO8TEC


window D=6mm

∼15 ≤5 ±25 60÷+85 >100 000

4.8±

0.1

D5 0-0.05

D3.2±.05

0.3

M5*0.5D 3.2

0.5

4.8

0.5

LE

D5

5C

y


LE

D5

5S

r


Pin assignment LED55TO8TEC12

Pro

duct

vie

w

10.5

±0.1

7.8

D0.45

6.4

thread 4-40 UNC

LED chipTEC

Lens

D15.4±0.1D6

2.5





Fea

ture

s


No

tes




2

Em

issi

on

spec

tra

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.50.01

0.1

1 20 oC

0 oC

20 oC

40 oC

60 oC

80 oC

drive current: pulsed, 1 A

Inte

nsity

Wavelengh, µm4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

0.0

0.2

0.4

0.6

0.8

1.0H

2O absorption

CO2

absorption

20 oC

0 oC

20 oC

40 oC

60 oC

80 oC

waf. 895

No

rmal

ized

Inte

nsity

Wavelengh, µm

Po

wer

and

pea

k w

avel

eng

th v

s.

tem

pera

ture

; I –

V c

urve

s

20 10 0 10 20 30 40 50 60 70 800.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

5.0

5.2

5.4

5.6

5.8

6.0

6.2

6.4 Power

Po

wer

at f

ix. c

urr

ent,

arb

.un.

Temperature, oC

Wavelength

Pea

k w

avel

eng

th, µ

m

0.0 0.1 0.2 0.3 0.40

200

400

600

800

1000

waf. 895

20 oC

0 oC

20 oC

40 oC

60 oC

80 oC

Voltage, V

Cur

rent

, mA

Out

put

pow

er a

nd d

rive

curr

ent

vs

ope

ratio

n co

nditi

ons

0 200 400 600 800 10000

1

2

3

4

5

6

0.01 0.1 1100

200

300

400

500

600700800900


Pu

lsed

po

wer

, µW

Current, mA

τT

Time

Driv

e cu

rren

t




Driv

e cu

rren

t Im

ax ,

mA

Duty cycle


3


1MC06024/115 2.6 70 1.86 1.0 2.78 1.07T

herm

oel

ectr

ic c

oo

ling

mo

dule

dat

ashe

et


Type TB04103


60 1134.5 15 12.44

55 762.4 20 10.00

50 521.6 25 8.09

45 362.8 25 8.09

40 256.3 30 6.60

35 183.8 35 5.41

30 133.6 40 4.47

25 98.3 45 3.71

20 73.3 50 3.10

15 55.2 55 2.61

10 42.1 60 2.20

5 32.4 65 1.87

0 25.2 70 1.59

5 19.7 75 1.37

The

rmis

tor

spec

ifica

tion

10 15.6 80 1.18

30 20 10 0 10 20 30 40 50 60 70 80

240 260 280 300 320 340 3601

10


Temperature, oC

Rt=R

t0exp(β(T

0T)/(T*T

0)), where

Rt0



Res

ista

nce,

kO

hm

Temperature, K

Po

ssib

le T

EC

he

atsi

nk v

iew


1

Optically Immersed 7.0 µm optically pumped LED in heatsink optimized housing OPLED70Sr/Su/Cy

TE cooled Optically Immersed 7.0 µm LED OPLED70TO8TEC


Pulse power µW Drive current 1 A, 0.02 duty cycle 8÷10

QuasiCW power µW Drive current 0.15 A, 0.5 duty cycle 1.6÷2

CW power µW Drive current 0.1 A 1÷1.25



Weight, g

Optical components





Lifetime, hrs

OPLED70Sr/Su/Cy ∼0.4 Si lens 60÷+60

OPLED70 TO8TEC


window D=6mm

∼15 ≤5 ±25 60÷+60

>100 000

4.8±

0.1

D5 0-0.05

D3.2±.05

0.3

M5*0.5D 3.2

0.54.

80.

5

OP

LE

D70

Cy


OP

LE

D70

Sr


Pin assignment OPLED70TO8TEC12

Pro

duct

vie

w

10.5

±0.1

7.8

D0.45

6.4

thread 4-40 UNC

LED chipTEC

Lens

D15.4±0.1D6

2.5



Optical pumping;Optical coupling through the use of chalcogenideglasses and Ge lenses with antireflection coating


Fea

ture

s


No

tes




2

Mea

sure

d em

issi

on

spec

tra

4 5 6 7 8 9 100.01

0.1

1

H2O absorption

Inte

nsity

Wavelengh, µm4 5 6 7 8 9 10

0.0

0.2

0.4

0.6

0.8

1.0 20 oC

0 oC

20 oC

40 oC

60 oC

80 oC

No

rmal

ized

Inte

nsity

Wavelengh, µm

Co

rrec

ted

for H

2O

abs

orp

tion

emis

sio

n sp

ectr

a

4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

0.1

1

Inte

nsity

Wavelengh, µm4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

0.0

0.2

0.4

0.6

0.8

1.0

20 oC

0 oC

20 oC

40 oC

60 oC

80 oC

No

rmal

ized

Inte

nsity

Wavelengh, µm

Po

wer

and

pea

k w

avel

eng

th

vs. t

empe

ratu

re; I

– V

cur

ve

20 10 0 10 20 30 40 50 60 70 800.2

0.4

0.6

0.8

1.0

1.2

1.4

6.2

6.4

6.6

6.8

7.0

7.2

7.4

Power

Po

wer

at

fix. c

urr

ent,

arb

.un.

Temperature, oC

Wavelength

Pea

k w

avel

engt

h, µ

m

1.0 1.2 1.4 1.6 1.8 2.0 2.20

200

400

600

800

1000

Pumping source 20 oC

0 oC

20 oC

40 oC

60 oC

80 oC

Voltage, V

Cu

rren

t, m

A

Out

put

pow

er a

nd d

rive

curr

ent

vs o

pera

tion

cond

itio

ns

0 200 400 600 800 10000

2

4

6

8

10

0.01 0.1 15060708090100

200

300

400500600700800900

1000

200022oC, d.c.= 0.02 (τ= 20 µs, T=1 ms) 0.06 (τ=60 µs, T=1 ms) 0.125 (τ=125 µs, T=1 ms) 0.25 (τ=250 µs, T=1 ms) 0.5 (τ=500 µs, T=1 ms) 1 (τ=970 µs, T=1 ms)

Pul

sed

pow

er, µ

W

Current, mA

τT

Time

Driv

e cu

rren

t




Driv

e cu

rren

t Im

ax ,

mA

Duty cycle


3


Pul

se o

pera

tion

(d.c

.=0

.06

)

0 200 400 600 800 10000.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

I=750 mA, T= 1 ms,τ=

20 µs 60 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

I=1000 mA, T= 1 ms,τ=

20 µs 60 µs

Time, µs

Qua

si C

W m

ode

(d.

c.=

0.5

)

0 200 400 600 800 10000.00

0.01

0.02

0.03

0.04

0.05

0.06I=150 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs 970 µs

Sig

nal,

arb.

un.

Time, µs0 200 400 600 800 1000

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07 I=200 mA, T= 1 ms

Time, µs

СW

mo

de (

d.c.

=1)

0 200 400 600 800 10000.00

0.01

0.02

0.03

0.04

0 200 400 600 800 10000.000

0.005

0.010

0.015

0.020

0.025

I=50 mA, T= 1 ms

Sig

nal,

arb.

un.

Time, µs

I=100 mA, T= 1 ms,τ=

20 µs 60 µs 125 µs 250 µs 500 µs 970 µs

Time, µs


4


1MC06024/115 2.6 70 1.86 1.0 2.78 1.07T

herm

oel

ectr

ic c

oo

ling

mo

dule

dat

ashe

et


Type TB04103


60 1134.5 15 12.44

55 762.4 20 10.00

50 521.6 25 8.09

45 362.8 25 8.09

40 256.3 30 6.60

35 183.8 35 5.41

30 133.6 40 4.47

25 98.3 45 3.71

20 73.3 50 3.10

15 55.2 55 2.61

10 42.1 60 2.20

5 32.4 65 1.87

0 25.2 70 1.59

5 19.7 75 1.37

The

rmis

tor

spec

ifica

tion

10 15.6 80 1.18

240 260 280 300 320 340 3601

10

100

30 20 10 0 10 20 30 40 50 60 70 80

Rt=R

t0exp(β(T

0T)/(T*T

0)), where

Rt0



Res

ista

nce,

kO

hm

Temperature, K

Termistor calibration

Temperature, oC

Po

ssib

le T

EC

he

atsi

nk v

iew


Lifetime TestsRoom temperature lifetime tests were performed with InGaAs homojunction diodes un-encapsulated and encapsulated at current pulses of 2A, duration 50 µs and repetition rate of 30 Hz.

Lower figure presents data on the long-term variation of the properties of the uncoated InGaAs homojunction LED s at high temperatures. The upper graph shows the times for which the LEDs under study operated at several ambient temperatures. The samples operated at currents I = 0, 0.5, 1, 2 A for 150 h at room temperature, 450 h at T = 130°C, and 800 h at T =180°C. The LEDs were cooled to room temperature and heated again to T = 130°C eight times and to 180°C three times.

The lower graph shows the output power as a function of the working time. As can be seen, the output power decreased, on average, by 25% after 1400 h of operation. It is noteworthy that the operating current strength has no effect on the degradation of the LEDs. With increasing operating time, the reverse currents at a bias U = 1 V increased from 0.5–1 mA (0 h) to 3–4 mA (1400 h). On “cleaning” the sample surface by etching in CP-4, the reverse current returned to its initial values, and the output power tended to regain its initial value: P(1400 h) = (0.85–0.9)P(0 h).

This confirms that LED encapsulation or by protection with window should increase LED lifetime at elevated temperatures.


UPS Driver™ Universal Photon Source (UPS) Driver Board

Features

Easy to use

Low cost

Simple, flexible control using dedicated

software

Adjustable voltage to the light source

CW or pulsed operation—MHz to DC

Nanosecond to seconds repetition rate

Current and voltage monitor

powered from USB (<0.5A) or DC supply

The Boston Electronics Universal Photon Source (UPS) Driver delivers! It is a flexible,

compact, low cost, configurable board, including power supply, that drives a widerange of light sources. The driver can control pulsed and CW sources, which makes it

suitable for driving ultraviolet (UV), visible and infrared (IR) sources, light emitting

diodes (LEDs) and lasers over a frequency range of MHz to DC.

Control is provided by easy to use PC software. The last used drive parameters are stored

in the non-volatile EEPROM memory; thus, the configuration is remembered. The UPS

Driver is equipped with voltage and current monitors, trigger output, power and commu-

nication inputs and anode/cathode connections for the sources.

The UPS Driver is compatible with UV, visible and IR sources, LEDs and lasers.


UPS Driver Specifications Electrical parameters:

Power supply: - USB from computer or +5 ... +6 V, connected to the DC Jack connector

Average power deliveerd to connected source

max. 1.5W, for the power supply from USB

max. 10W, for the power supply connected to the DC Jack connector

Adjustable ootput voltage supply, in the range 0.5 – 25V, 4095 steps

Maximum current: 10 A (tested with QCL at 20 V and 100 ns pulse width)

Monitor for the supply voltage source (ADC)

Master clock period / frequency:

main clock period / frequency output signal max. period / min. frequency 1.638 ms / 610 Hz 3.27 ms / 305 Hz 6.55 ms / 152 Hz 13.1 ms / 76.3 Hz 104 ms / 9.54 Hz 420 ms / 2.38 Hz

25 ns / 20 MHz50 ns / 10 MHz100 ns / 5 MHz200 ns / 2.5 MHz1600 ns / 0.312 MHz6.4 μs / 78 kHz 25.6 μs / 19.5 kHz 1.677 s / 0.594 Hz

Pulse repetition period - adjustable in the range 1 ... 65535 times the period of the master clock

Pulse duration - adjustable in the range 1 ... 65535 times the period of the master clock

if pulse duration is higher than the period, source stays on – CW operation

Driving signal rise / fall times < 3 ns.

Pulse jitter : 6 ns pp

Trigger output starts 50 ns before the IR pulse

adjustable duration time in the range 1 ... 65535 times the period of the master clock

Power supply monitor

Source average current monitor - time constant 100 ms

All parameters have their equivalent – minimum/maximum to provide for safe operation

Anode of the source is connected to ground, cathode below ground potential

Software

The UPS Driver is configured using PC software, or text protocols.

Connections: trigger output—SMA connector

output impedance 50 Ω

standard LVTTL: logic 0 - 0 V, logic 1 – 3,3 V @ Hi-imp, 1.65 V @ 50 Ω

output current monitor—SMA connector


current sensitivity 0.1 V/A @ 50 Ω / can be modified

100 MHz BW

output voltage monitor—SMA connector


voltage sensitivity 50mV/V @ 50 Ω / can be modified

100 MHz bandwidth

micro-USB connector

communication with PC, virtual COM port

power supply, if current consumption of the driver does not exceed 0.5 A (USB 2.0 standard)

DC power jack 2.5/5.5

power supply, if driver requires more than 0.5A (USB 2.0 standard), or If the PC is not used (configuration is restored from the memory)

Size: 5/18 PCB dimensions 60x50x15mm (width×height×depth), including connectors

Developed with, and manufactered by:

12/14/2018 10:42

Boston Electronics Corporation91 Boylston St, Brookline MA 02445 USA

(800)347-5445 or (617)566-3821

fax (617)731-0935 * [email protected]

IR LEDs from Ioffe

Part # 1 to 9 10 to 49 50 to 99 100 up

LED19Sr $130 $104 $88 $70

LED21Sr $130 $104 $88 $70

LED30Sr $167 $124 $116 $100

LED34Sr $141 $102 $93 $85

LED36Sr $141 $102 $93 $85

LED38Sr $141 $102 $93 $85

LED42Sr $141 $102 $93 $85

LED47Sr $167 $124 $116 $100

LED55Sr $197 $177 $167 $157

OPLED70 $147 $123 $104 $79

Universal Photon Source Driver Board $450 ea.

For TE-cooled versions ("LEDnn TO8TEC"), add $250 to the above

prices for quantity < 25

- MIRDOG Price list 12-14-18.xls 12/14/2018

1. An electroluminescent IR LED is a product which requires care in use. IR LEDsare fabricated from narrow band heterostructures with energy gap from 0.25 to 0.4eV. That's why the bias used to initiate current flow is low compared to the wellknown visible or NIR LEDs. Typical forward bias is V~0.1- 1 V only for mid-IRLEDs!

2. Be sure not to exceed I*max which is given in each LED specification and donot use test instrument that contain sources/batteries with voltage greater thatVcw max given in specification. For LED current restriction and further LEDcurrent measurement we recommend to use resistor (1-5 Ohms) connected in serialto LED. This is important to note that un-grounded devices (e.g. computers) cangive V=1-5 V that is enough to destroy the LED!

3. It is highly desirable that the user has I-V meter for small currents (10-100x10-6 A). We guarantee the existence of the LED output as long as V-Icharacteristic shows saturation in the reverse bias (10-100 x10-6 A).

4. We recommend activating pulse generator prior connecting LED to generator. Onswitching off the procedure is reversed: disconnect LED, switch off pulsegenerator. Long wires connecting LED with pulse generator may be the reason forLED failure because of unexpected voltage surges when switching on and off theLED supply.

5. Please test all elements and circuits before applying voltage to LED. Rememberthat ground (T0-18 or another holder) should be biased positively (if notspecially designed). Usually the negative electrode is made shorter than thepositive one.

6. The expected signal is not very big and it is important to test and eliminatenoise in the detector circuits.

7. In some cases it is possible to increase pulse duration. Imax in such casescan be estimated using the following equation: Imax=I* max /20*SQRT(f*t), wheref-is the frequency (Hz), t-is the pulse duration (s), I* max-is the maximumcurrent (A) for t=5 us and f=500 Hz. The equation gives an order of magnitude andmay be used for t< 0.1 ms only. Pulses with t > 0.15 ms should be considered asadequate to CW operation and Imax and Vmax should be taken close to CW operationparameters. Please, note that long pulses can increase heat dissipation and thechip temperature. This effect decreases LED emission power and can be traced dueto the LED resistance decrease during each pulse. CW power often decreases withtime due to heatsink temperature increase.

8. Microimmersion LEDs are made with chalcogenide glass that have low meltingtemperature (50-70oC). That’s why, please, avoid any heater source close to theLED. Even sunlight concentrated onto the lens can melt glass the lens. That’s whywe recommend vertical position for the LEDs at the initial stage of the researchwork. We are working now to increase the glass melting temperature or/and tostrengthen its position and shape.

9. Be patient in adjusting the optical system. It is only experience that allowsfast work.


Documents

Infrared LEDs · W or pulsed operation—MHz to D Nanosecond to seconds repetition rate urrent and voltage monitor powered from US (