Index

Compounds are listed alphabetically according to (a) principal metal. (b) principal main group atom. and (c) metal nuciearity. Many of the solid-state compounds will be found under the generic descriplion M where M refers to the transition elements.

AI AlAs. 344 ~C2HIIAI(Et}. 92 LiAI.292 LiAISi.292

Alkenes coupling. 256 hydrogenation. 279 isomerization. 279

Alkoxide complexes. 31. 33. 232 Aklylidyne complexes, 231. 235 Alkynes

acetylene. 37 acetylene insertions. 260 addition. 256

Alloys. 315 Allyl ligand. 3S Aluminum. 21. 92 Aluminum hydride. 21 Amines. 39. 225 Antimouy. 30. 131 Aqueous ionic precipitation. 336

Arsenic. 131 Arsenic-sulfur rings. 265 As

LiAs. 294 As2.44 As2R4.49 AsH l .341

AuPR).87 Auraferraboranes. 91

B

387

1.1'-(B4Hgh. 255 1.2'-(B4H9)(BsH8). 255 1.2'-(B~H8h. 255 I,7-C2BIOHI2.259 2.2'·(B~H8h. 256 2.(lrans-l-butenyl)..B~H8. 259 2: 1',2'·[ 1.6-C2B.Hs][B2HsI. 270 2: 1'.2'-[BsH8][B2HsI. 270 I%Hi-. 183 "8 NMR, 91 [82H.12-. 36

388

B (Cont.)

[B2HsL 36 [B3HSP-,54 [BJ:l6j2-,92 [BF41-,21 [BH4L 17,20 B2H4(PMe3h, 34 B2~' 36 B2H~-, 255 BsH9,83 B6H IO,37 BsHi-, 219 B12H 16,269 B1SH22,269 BH3,17 Et2C2B4H6, 260 Et2Me2C4B4~' 260 172-B2~' 47 173-B3H3,85 ~C4BsHs, 266 BN, 368, 377

Band gap, 298, 344 Band structure, 290 Benzene, 189 Beryllides, 360 Bisborane,33 Bismuth, 97, 138 Bond activation

CH,242 GeH,242 SiH,242

Bond 3-center-2-electron, 244 3c, 4e 11" system, 30 agostic bridge, 244 As=As, 41 B-B, 267, 364 B-B formation, 76 B-H activation, 76 back-bonding, 237 C-C coupling, 76 C-H activation, 76 Co-Bi,30 Cr-C IT, 233 Dewar-Chatt-Duncanson model, 35, 39,

223,236 donor-acceptor interaction, 22 18-electron rule, 30 E - M strength, 26 E-H-M,18 electron distribution, 224

Bond (Cont.) electronic structure perturbation, 224 extended systems, 289 Fe-C, 241 Fe-H-B,273 Fe-H-C, 273 Fe-O-Fe, 276 Fe-Si,241 Fenske-Hall calculations, 36, 88 fragment molecular orbital, 189 Ge-H,27 Ge=Ge double, 41 M-Si,240 M-H-X, 284 Mn-H-C, 244 Mn-H-Si,245 Mn=E double, 29 Mo-C IT, 233 noble gas rule, 188, 190, 195 nonmetal-metal, 6 P=P, 41 silylene-metal, 27 strength, 225 Ta-Si,327 Ta-Ta, 327

Index

three-center Dewar-Chatt-Duncanson model,39

two center, n-electron, 18 unsaturation, 231

Borides, 9, 338, 360, 364, 378 Boron, 20, 76 Boron-nitrogen rings, 262 Boryl group, 23 Borylidene, 82 Borylidyne, 81 Brillouin zone, 306 Brittleness, 363

C C~,17

C2~' 36,225 C2R2B2RzS, 59 C4H4,57 173-C3R3,55 CO,225

Carbides, 301, 338, 360 Carbon-element chemistry, 4 Carburization reaction, 362 Carrier gas, 346 Catalyst precursors, 279 Catalytic properties, 153

Index

Catenation, 8 Cd

Cd(SePh)z, 353 CdSe, 352, 371 CdTe, 336, 338,352,371

Ceramic precursor synthons, 361 Ceramic synthesis, 369 Ceramics, 359 Chelate effect, 33 Chemical processing, 380 Chemical transport reactions, 336 Chemical vapor deposition, 337 Chevrel phase, 321 Clusters

bipolar deltahedral shape, 213 condensation, 265 construction, 265 capping principles, 182 centered structures, 312 debor principles, 182 expansion, 88, 260 formation, 281 intermediates, 353 metalloboranes, 76 nonpolar deltahedral shape, 214 partitioning schemes, 183 polar deltahedral shape, 213 polyhedral skeletal electron pair theory, 85,

183,188 semiconductor nanoclusters, 354 styx formalism, 179 Tensor Surface Harmonic Theory, 213 three-connected structure, 183 topological factors, 213 topological electron counting theory, 200

Co Al

C03(CO)12AI, 92 As

B

CoAs3,297 CO(CO)3As3, 55 As2[Co(CO)3h, 49, 273 C03(CO)9As, 118, 134 CpMoFeCo(CO)sAsMe, 135 Fe2Co(CO)9AsMe, 135 C03(CO)~S{C04(CO)1l}' 134 {CoiCO)sAsh, 118, 134 Co4(PPh3MAs)6, 138

(CO)4CoBH2 . THF, 23 [(COM111-dppm)Co(lL-dppm)BH2, 25

Co (Cont.) B (Cont.)

Bi

C

CpCO(114-B4Hs),56 CpCO[114-{B(Pr)N(t-Bu) hl, 57 nido-l,2,3-CpCoRR'C2B3Hs, 262 nido-2-CpCoB4HS, 262 IL-C3~Cp2C02C2B3H3, 262 1,2,3-(CpCo)zFe(CO)4B3H3, 85 (CpCoh(1L3-BPh)(1L3-PPh), 86 1,2,3-(CpCoh(1L3-CO)B3H3, 85 1,2,3-(CpCo)3B3Hs,85 C03(CO)9BNEt3, 82 (CpCoMPPh)B2H2,86 B4~(CO(CsHs»4' 219 H2(CpCo)4B2H2,91 C06(CO)16B, 85

[Bi2Fe2Co(CO)lOL 138 Co(CO)3PPh3BiPh2,22 Co(CO)4BiPh2,22 C03(CO~Bi, 98, 118, 139 [Co(COh(1L3-Bi)14, 141 [Co(CO)4hBi, 30 Bi2Fe2Co(CO)io,281

(113-C3Bu~)Co(CO)3' 236 Co(COhC3Ph3,54 CpCO(114-C4H4), 56 (RCFCR')C02(CO)6, 256 (CRk.[Co(COhln, 54 CO2(CO)6C2(t-Buh, 48 CO2(CO)6C2R2, 49 [Co3(CO)9CC01+, 80 [CoFe2(CO)9CCOr, 95 C03(CO)9CR, 195 C03(IL3-CR)(CO)9,211 C04(CO) lOC2H2, 91 (CO~Co3C(CH2)nOH, 25

Ga C03(CO)12Ga,92

Ge CO2(CO)6{IL-Ge(Me)Co(CO)4h, 94 CO2(CO)7GeR { CO(CO)4}, 94 C03(CO)9GeR,94 CpWCo2(CO)sGeR, 95 H3CpMoCoFe(CO)sGe'Bu,94 C03(CO)9GeCo(CO)4,94 C03(CO)9GeCO(CO)4,96 C03(CO~GeFe(CO)2Cp, 94 C03(CO~GeMn(CO)s, 94 C04(CO)14Ge,96 [Co3(CO)9GeColCO)61-, 96

389

390

Co (COlli.) Ge(Cont.)

Co4(CO)1I{GeCo(CO).h,96 C~(COhoGel' 96

N FeCo~CO),NH, 102 Ru,Co(CO).2N, 108 [C~(CO)13NJ-, 114, 128 [C06(CO)I,N]-, 114, 128 [Co.4(CO):I6(Nhl'-, 114

o

P

S

C03Cp,(~,-CO)O, 144

Co(triphos)P" 55 Cp.Co(".,,4.P4)CoCp, S7 Cp-Co[,,4.{PC(t.8u)hl, S8 Co(triphos)P,Fe(etriphos), S6 COiCO~(PCMc), S I COiCO~C(R)P, 118 COiCO~1.49 {COJ(CO),C(R)Ph, 118 COJ(CO).{PCr(COhh.119 Co,(CO),P, 117 Co4(CO)IJ[(F1NMc)4)(",,·PPhhl, 217 Co4(CO).o(""-S)(,,.·PR), (R .. Me, Co.H..

p-OMe),126 Co.(CO).o(PPh)z, 12S CP4Co.P., 125 [C~(CO).tPt, 128 (Co,(CO).Ph, 118 p.[Co(CO)Jl44,273

C03(COM~·N(H)C(Me)S)S, 149 C03(COM~~COMc)S. 149 Co,(CO),S, 149 Cp,CoS<",-cs)S, 155 FeCOJ(CO),S, 149 HCoFe~CO),S, 149 HFcRuCo(CO)'s' 149 COiCOk~MOi""·S)(,,,.s)z. 158 Co.(CO).o<I'4·S)(",,·PR), 161 Co.(CO).oS2, 161

Se

Si [COa(PPh3MI'4-seh("3·Se~I+, 165

(CO).CoSiR" 24 Co,(CO),SiCo(CO)., 94 C04(CO)II{SiCo(CO)4h.96 [Co,(COh.Sij2-, 98

Te CoTe, 336 CoT~, 336

Coatings protective, 333 Cobahaboranes, 25. 85 Condensed systems, 290 Conformal growth, 334 Couplina

B-8 bond, 255 8,H, dimer, 255

Cr As

B

CpCr(As,)CrCp, 265 (,,6-C,HsA,s)Cr(,,'-C,H,As),61 [Cr(CO),(A5?W·,61 Cr(CO),(,,6.8,N,Et.),61

Cr(COM~H.(PMe,h), 34 Cr(CO)'[~H.(PMe,hl. 34

Ge (CO),CrGe(Smesh. 27

N Ca,CrN"302, 305, 307

P

Index

Cp.Cr(~.,,'·p,)CrCp •• S9, 265 Cr(CO),("l·PhP::::PPh)[Cr(CO),h. 42 [Li(DME).)[Cr(PCy2),I, 379 Cr(COMP2H2), 43

Pb [Cr(CO),Pb,14-, 56

S [Cr,(CO).lS]2-, 1 S I [CpCr(COhhS, 32

Sb [Cr(COh)Sb-, 308

Se [CpCr(COhhSe, 32 (CpCr(CO)ZhSe2, 47

Si (,,6-c..Me.)Cr(COh(H)SiHPh2,21

Sn [Cr(CO),Sn,)4-, S6 Cr(CO),Sn(t-C4H90h' HMPT, 27

Te [CpCr(COhhTe,32

Crystal orbital overlap population, 291. 321 Crystal orbital, 290 Cu

B (Cu(1/2·B,H,)(PPh3h), 14 [Cu{B1H..(PMcs)zhl+' 34

S KCus.., 296 (NH.)Cus.., 296

Cyclization, 262

Index

Cyclobutadiene, 235 Cyclopropenyl ligand, 235

Decapping, 131 Dehydrocoupling of boron hydrides, 255 DeltahedraI polyhedraI molecules, 184 Density of states, 290, 321 Dewar benzene, 189 Diphosphine, 33 Disilene, 39 Dispersion curves, 290 Disulfide, 52

Eo. rings, 298 Electrical conductivity, 363 Electrochemical, 125 Electron deficient materials, 300 Electron rich atoms, 33 Electron-electron repulsion, 300 Electronegativity, 18,214,241 1,2 Elimination reaction, 247 Epitaxial growth, 340 Exlrnido tautomer, 280 Extended bonding, 8

Fe AI

[CpFe(COhAIPh]r,23 As

B

Fe](COMAsh, 135 Fe](COMAsPhh, 137 Fe](COMAsPh)S, 137 Fe~CO),CH(As), 134 A~F(%(CO>n, 132

(CO)]FeB.H., 14, 16 (CO)~eMe.C.B.H., 262 (176-C,B~)Fe( 176-C,BH6), 61 (RzCzB.H.hFeDH2,267 (L)Fc2(EtzCzB.H.h,267 CpFe(I7'·B,H1o),58 Fe(COMI7··B.H.), 56 Fe(COMI72'~IO)' 37 Fe(I7'-C,H,)(COh(~'BzH,), 36 Fe[(NMeh(BPhhN)z, 58 FeCp(COh(l7z·BzH,), 255 K(Fe(CO)'(~'BzH,)], 36, 254 nido-1-(CO),FeB.H" 262 Ph]BC,H.Fe2(CO),Cpr, 22 Fe~CO~Bz~,47, 78 1,2,3·Fe](CO)'B(H)C(H)C(Me), 85 [HFe](CO),BH,r, 88, 271

391

Fe (Cont.) B (Cont.)

Bi

C

G

N

HFe,(CO),BH,R, 78 [Fe.(CO)I2Bl'". 88 [HFe.(CO)12BH)-, 88,271 HFe.(CO)12BH2' 271 Fe.(CO)lzAu2(PEhhBH, 91 HFe.(CO)lzBHz, 78, 86, 87, 107,271 HFe.(CO)I2B{AuPEt]h, 130 HFe.(CO)I2CBHz, 85 HRu]Fe(CO)12BHz, 109 [Fe.Rhz(CO)"B)-,88

Fe~COM,,·,COMe)Bi, 139 (Fe](CO),Biz)Z-, 142 [Fe,(CO)'Biz{Fe(CO).}]Z-, 142 [Fe](CO),oBW, 98, 139 Cp,Fe,(CO),Bi, 139 Fc](CO),Bi(CH), 142 Fc](CO),Bi2, 139 Fe](CO)gCH(Bi), 134 H,Fe](CO)gBi, 139 [Bi.Fe.(CO)Il)l-, 139, 142 Bi1Fe.(CO)I3Z-, 281 Bi.Fe.(CO)ii",281

CpFe(CO}zCH], 240 Fe(COMI71-C1H.), 35 CpFe(CO}zL. 241 (CzH.)Fe(CO)., 194 (17]-C,Bu~)Fe(COhNO, 237 (,,·CHz)Fcz(CO)., 194 [Fc,(CO),CCO]Z-,80 H]Fe](CO),CCH],272 H]Fc,(CO),CR, 78 [FC.(CO)I2C]l-, 88 HFc.(CO)IZCH, 107,272 Fe,(CO)"C, 134 [F(%(CO)16C]1-,88 [Fc]Rh~CO)I5C]-' 88

[Fc](CO)IOGcFe(CO).)l-, 94

Fc,(COMNMch, 103 Fc](CO),NzRz, 106 Fc](CO),NSiMe], 104 FC,(CO),oNH, 99 Fc](,,'·NH)(CO),o. 211 HFc,(CO)gN=CHPh, 106 [FeRu](CO)lzN)-, 107 HFe.(CO)lzN, 107 HRu,Fe(CO),zN, 108

392

Fe (Cont.) N (Cont.)

Ru?e(CO)dAuPPh)N, 109 [FeS(CO)14Nr, 107, 112 [HFes(CO)I3N)2-, 112 [Rll4Fe(CO)14N)-, 114

° P

Cp*Mo2Fe(COhO, 145 [Fe)(CO~OJ2-, 144 Fe)(CO)g(CMe)(OMe), 146

[CpFe(Ps)Fe(CsMe..Et»)+, 265 Cp*Fe(I1S-ps), 59 Fe2(CO)6Pit-Buh, 49 {[Fe(CO)4h!PCH(SiMe)2h}, 15 Fe)(CO)g(PPh)2, 123 Fe)(CO)g(PR)(S), 124 Fe)(CO)IOP(R)=CH2, 120 Fe)(CO)IOPR, 120 Fe)(CO)IOP'Bu, 122 Fe4(CO)II(PPhh, 125 {FeiCO)IO(PPhhh{p-(MeO)2P-C~MeOh}, 126

Pb

S

[F~(CO)sPb{Fe(COMh)2-, 98 Pb{Fe(CO)4h. 96

(RS)~e4S~-, 281 [S4N4]+[FeC4r, 265 [S4N40)FeC4, 265 Fe2(CO)6S2, 51 [Fe)(CO~SY-, 149 FeiCO)9StBu(I'-X), 149 FeNi2Cp2(COhS, 149 HFe2NiCp(CO)6S, 149 [Cp'MoFe(CO»)S2h, 157 Cp'2Mo2Fe2(CO)8~, 152 Cp2Mo2Fe2(CO)6S4, 153 CP2M~FeiCO)8S2' 152

Sb

Se

Cp(COhFeSbM~, 30 Fe)(CO~CH(Sb), 134 [Fe)(CO)IOSbFe(CO)4r, 134 [H2FelCO)9SbFe(CO)4r, 134 [HFe3(CO)~bFe(CO)4J2-, 134 Fe)(COMSbCr(COhh, 137 SbFelCO)g{Fe(CO)4}{Cr(CO)}5, 132 [Fe)(COMSbFe(CO)4hJ2-, 137 S~Fe6(COb. 132

Fe)(CO~Se2' 124

Fe (Cont.) Si

Fe(COMI'-SiPh2hFe(CO)4, 15 [Fe(CO)4hSi·2HMPT, 27 Cp(CO)FeH(SiCl)h,241 CpFe(COhSiO),241 CpFe(COhSiR),241 NE4[(CO)~eSiO)), 241

Sn Fe(CO)4Sn(t-C4~Oh • HMPT, 27 [{Fe(CO)4hSn)2-,26 [F~(CO)8Sn{Fe(CO)4)hJ2-, 98 Fe)(COMSnFe(CO)2Cph, 94

Te FeTe, 372 FeT~, 372 Fe2(CO)6 Te2Fe(COh(PPh), 163 Fe)(CO~Te2' 124 Fe2Ru3(CO)17 Te2, 163 [Tl2Fe6(CO)24Y-, 132

Fermi level, 299, 322 Ferrocene, 54

Index

Film growth (II-VI), 346, 352 Four-connected polyhedral molecules, 184 Fragments

[CpMn(COh), 226 AuPPhj,205 B-H,211 B=CH2,83 BCO,83 CHj,193 Co(CO)4, 194 CpMn(COh, 28 Cr(COh,206 Cr(CO)s, 193 Cr( I1-C6H6), 206 Cr(OMeH-, 206 Cr(PH)), 206 Cu(COh,194 CuPRj, 205 Fe(CO)4, 193 Fe(CO»)PMe),30 Mn(CO)s, 194 Ni(COh,193 [PtL2f+, 201 [PtL))2+, 201 Si-H,211 SiR2,26 SiR), 26 Ti(CO)6, 193 V(CO)6,194

Index

Fragments (Cont.)

W (1I-C,H')2W, 196 W (1I-CsHs)2 WH, 196

Frontier orbitals, 205

Ga B4C2~GaMe, 92 ~C2HIIGa(Et), 92 LiGa,292 Ga(CH3)3,341 GaAs,338 KGa02,307

Gallium, 92 Ge

KGe,294 Germanium, 94 Germy1enes, 27

Haber process, 99 Hard cast alloys, 364 Hard-soft acid-base theory, 19 Hardness, 363 Heteroepitaxy, 340 Hf

B

P

Hg

H~, 365, 378

[Li(DME)][HftPCy2h1, 379 ~HftPCy2n, 379 CP2HftPPh2n, 379 (Cp")2HftP4),61

HgTe,336 Hg.Cdl_xTe, 344, 350

High-temperature precipitation, 336 High-performance ceramics, 360 Homoepitaxy,340 p-Hydride elimination, 260, 346

Imides,99 Iminoboranes, 51 In

In(CH3)3,347 Naln,292 B4C2~InMe, 92 CP*6In6,92

Indium, 92 Indium phosphide films, 334 Inert gas rule, 199

Inorganometallic chemistry clusters, 74 definition, 1

Intermetallic complexes, 326 Interstitial atoms, 189, 309 Interstitial compounds, 362 Ionization potential, 36, 224 Ir

B

Bi

(C~02B)Ir(H)(Cl)(PMe3)3' 25 (Ir(BsHs)(CO)(PPh3)2), 14 (Ir(BsHs)BriCO)(PMe3)2), 14 (PMe3)3Ir(HnBRH, 25 2-[IrH(CO)Cl(PMe3)21-BsHs, 259 Ir(1I4-B4H9)(CO){P(CH3)2C~sh, 62 Ir(CO)Cl(PPh3)2, 256 IrCI(CO)(PPh3)2· Ag(CBIIHI2), 284

Ir3(CO),Bi, 139 N

[Ir4(CO)II(NCO)r, 114 [Ir3N(S04MH20)314-,31

o ItD(02)CI(CO)(PPh3)2, 276

P Cp*Ir[1I4-{PC(t-Bu)h1, 58

Si IrX(H)(PMe3MSiHR2), 26

393

Isolobal analogy, 28, 31, 87, 182, 193, 195, 199,200,205,211,223,229308

Isomers, 79

Jahn-Teller unstable, 303

Kinetic control, 5

Lead, 96 Leaving groups, 369 Lewis acid-base adducts, 224, 349

M BaFeSbl2, 297 BaRu.SbI2, 297 CdP4,295 CoAs3,297 CoIr3,297 CoP3,297 Cs(Nb,Ta)N2,307 FeP4,295 IrAS],297

394

M (Coni.) IrP3,291 IrSb3,297 K(Nb,Ta)Nl. 307 LaFe.P'l, 300 LaQs.P'l.300 LaR\4Pu,3OO Li~BN1' 301 LnFe.As'l, 297 LnFe4P'l,297 LnF~lh297 LnRuAsll, 291 LnRuP\2,291 LnRuSb\2, 297 M1Ge1E), 297 Na3BN2, JOI 0sP4,295 P,(MMe3h, 379 Rb(Nb, Ta)N1, 307 RhAs1,297 RhP1,297 RhSb3,297 RuP4,295 Ta.Te.Z senes, 326 T~C01' 311 T~Fel,317 Ta,S.Nil' 311 TaIlSeaCO}, 311 TallSeaFel, 317 TaIlSeaNi1, ) 17 YCOC, 303, 307

Mechanical strength, 363 Mdt processing. 367 Mettina point, 363 Metal bolides, 364 Metal-alkyl

bond, 240 complexes, 240

Metal borohydride, 20 Metal carbides, 362, 372 Metal-w1lon triple bond, 231 Metal catalysis, 255 Metal ceramics, 361 Metal chalcoaenides, 316, 360, 311 Metal-metal bond, 373 Metal nitrides, 362, 374

multiple bond, 307 MetaI-N1 complexes, 274 Metal-NO complexes, 275

Metal-nonoxide multiple bond, )70 Metal-01 complexes, 276 Metal phosphides, 364 Metal poIychaicides, 294 Metal polyphosphides, 295 Metal polypnictides, 294 Metal silicides, 364 Metal-silyl complexes, 240 Metal-nonoxide ceramic powders, 368 Metallacycles, 48 Metalloboranes, 378 Metalloboride, 88 Metalloimides, 99 Metallophosphines, 318 Metallosilanes, 378 Metathesis reaction, 233 Methane complex, 21 Microelectronic device Iilbrication, 366 Microstructures, 368 Mn

Al (CO),Mn-C(CH3)=OAlBr3, 219 [(dmpehMn(".HhAl(H)(,,·H)h, 21

As

B

[Cp.Mn(COhl~, 41, 44 [{Cp'Mn(COhhAs)+, 31, J08 {CpMn(COhJ~S}, 44

(Mn(CO),.LhBY, 2S Mn(CO>,B1U., 54 Mn(COhB.H13, 35 Mn(CO).B3H.,54

Bi

C

[Mn(CO),hBi, JO

MeCpMn(COh,246 Mn(COh(,,-C,H,), 195 ("l-C.H,)Mn(CO»), 244 CpMn(COhC214 226 Cp Mn(CO)l, 226

Ge [(CsH.Me)Mn(COhhGe, 29 (Cp.Mn(COhhGe, 27 [Cp.Mn(COhl1Ge, 32 CsMe,Mn(CO)lHGePh1• 248 CpMn(COhHGePh3, 248 CpMn(COhHGeR3,245 MeCpMn(COhHGePh3, 248

Index

Mn (ConI.) N

P

(lI'..c,H)Me»)Mn)(".NOMNOHW. 103

CpMn(COnN2,226 CpMn(COnNH),226

(CpMn(COnhPPb, 30 CpMn(COnPMe),226

S CpMn(COnS~, 226 ({CpMn(COnhSPh]+' 31

Se

Si ((CpMn(COnhSePh)+' 31

C,Me,Mn(COnHSiHPh2, 248 CpMn(COhHSiO). 246 CpMn(COhHSiHPh2, 248 CpMn(COnHSiR), 245 MeCpMn(CO)(PMe])HSiCI], 248 MeCpMn(CO)(PMe)HSiHPh2, 248 MeCpMn(COhHSiFPh2, 248 MeCpMn(COnHSiHPh2. 248 MeCpMn(COhHSiPb), 246 Mnl(COMSiPh2h,41

Sn CpMn(COhHSnR). 245

Te

Mo

MnTe,372 (Cp-Mn(COhhTe,32 MeTc{Mn(COnCp)" 163 (CpMn(COhh Te, 32

As

B

(C,Mc:..R)Mo(A%)Mo(C,Me..R), 265 A~(Mo(COhCph, 273 (CpMoM",,,2·A~)(,,,,,%-As), 45, 49, 59

(Mo[(,,·HnBH2)(CO).r,20 Cp;z(H)Mo("l.BlH,), 36 Mo(COM~H.(PMe)n], 34 Mo(CO),(~H.(PMe)h), 34

Bi

C Cp·~MoiCO).sil' 141

Mo(COl6, 373 (CCMe])Mo(Mc)COh, 239 (CCMe)Mo(OR1), 231

Mo (Coni.) N

395

[(Ph2PCH1CH1PPh2h(O)Mo(NNH%)r, 274

o

P

S

Si

(N)Mo(OR,),231 Irtlns-Mo(N2n(PMePhlh-(PPh:CH2CH~Me), 274

(Ph:PCH1CH2PPh2hMo(N2n, 274 ~Mo,(N)(O)(CO)., 99 (iPrO)IlMo.(Nh, 99

(Cp)Mo)(CO).O)+' 144, 145 (Mo)(COl6(NOM,,-OMe»)OMer, 146

MO(PCy2)., 379 (Mo(PBu2)., 379 CPlMo(,,1·P2Hl),42 ("l-pqt-Bu)(COnMo(,,'.{ pc(t.Bu) h), 61 (Cp-)(CO)MoP2{ CI(CO),} h, 49 [Cp.Mo(CO)(P2)h, 380 [Cp.MohP6, 380 Cp-(CO)MoP.Mo(CO)Cp., 265 Cp-Mo(",,,'·P.)MoCp-, 60 Cp.Mo(P.)MoCp., 264

(CpMonA~S, 265 [MO)(CO)12S)1-, lSI Cp.Mo.S., 281 CPlMa:Ru,(CO)I.(".-1I2·COhS, 161

Mo,Si,,328 Sn

Cl)SnMo(O)(COlJ(dth), 26 Molecular beam epitaxy, 341, 342 Molecular orbital diagrams

CpMn(COnN2, 228 CpMn(COh, 228

Molecular precursor method, 334 Mond process, 337 Monoliths, 333 Monosized particles, 367 Multiple bond, 18, 231 Multiple bond in solids, 301 Multiple bond reactions, 29 Multidecker complexes, 282

N uNNMR,115 NH),17

396

N (Cont.) [N~j+, 17 N2F4,254 N20, 254

Nano-crystallites, 380 Nanocluster particles, 354, 372 Nanoscale materials, 333 Nb

Ni

(Nb,Ta)6X'2 X = halide, 311 B Cp*Nb(B2~h, 47 CP2Nb(H)[1I2-B(t-Bu)N(t-Bu)] 37

CI

N

o

P

S

N~Nb6C1'8, 282 Nb6C1S18", 311

Nb618,313 Nb6I IIH-, 313

NbN,375 Nb4N3,375 NbC.N,_ .. 377

[Nb3(S04)60iH20)3P-, 145

[Cp*Nb(COh]P4, 380 Cp*(COhNb(1I4-P4), 57 [Li(DME)n][Nb(PCy2)4], 379 (Cp*NbhP6, 380 Cp'Nb(IL,1I6-P6)NbCp',60

Nb6S174-, 281 Se

Nb2Se 325 Si

NbSSi3,328

Ni(CO)4, 338, 373 As

B

[N~(CO),s(lLs-AsPhhf-, 138 Ni9CliPPh3MIL4-As)6, 138 Ni9CllPPh3>s(1L4-As)6, 138 [NilO(COb(lLs-AsMehf-, 138

B4HiNi( II-CsHs)4), 219 Ni(CO)z[B2H4(PMe3h], 34

C [Ni(II-CsHs)(C3Ph3)], 203

Ge [NilO(CO)20Gej2-, 98 [Ni12(CObGe]2-, 98

Index

Ni, (Cont.) N

(t-BuNC)2Ni(1I2-N2Ph2),41 CaNiN, 303, 307

P Cp2Ni2Ru3(CO)9PPh, 124 Ni8(COMIL4-PPh)6, 128 Ni8C4(PPh3MIL4-PPh)6, 128 Ni8C4(PPh3MIL4-PPh)6, 138

Sb [NilO(CO),s(lLs-SbPh)2]2-, 138 [Nill(CO),sSb{SbNi(CO)3hr-, 138

Se Nh(PPh3)6Se2, 163 CP4N4Se2, 165 N~(PPh3MIL4-Seh(1L3-Seh, 165

Sn [Ni'2(CO)22Snj2-, 99

Te NiTe,372 CP(PPh3)NiTe(IL-NiCp h TeNi(PPh3)Cp,

163 Nickel films, 238 Nitrides, 99, 231, 235, 301, 338, 360 Nitrogen, 99, 225 Nitrogen-sulfur rings, 265 113-03,56

Organometallic chemistry, 5 Organometallic vapor phase epitaxy, 341 Os

As

B

Bi

C

H20S3(CO)0sPh, 135 0s3(COMAS(P-tolyl)}(1L3"4H)Me), 134 H20S4(CO)'2AsPh, 137 Oss(CO),sAsPh, 138

K[Os(COMII2-B2Hs)], 36 K[0s(COMII2-B2Hs)], 254 H)0s3(CO)9BCH2, 82 H30S3(CO)9BCO, 79 H30S3(CO)9BPMe3' 82 HPS3(CO)9C(OBCsH'4)BCI, 83

H30S3(CO)9Bi, 139

OS3(CO)'2, 194 [OSlCO)9CC0j2-, 80 H20S3(CO)9CCO, 80 H20S3(COhCCH2, 83 H20S3(CO),o(lL-CH2), 76

Index

Os (Cont.) C (Cont.)

N

H30S3(CO)h3-CH),76 H30s3(CO~CBCh, 82 [~(COb{CHC(Me)CHW, 75

H20s3(CO)9NPh, 105 o

P

S

0%(CO)ls(1l3-CO)(1l3-0), 75, 143

H20s3(CO)9PPh(C6H.), 119 H20s3Ru(CO)12P(C -C~II)' 124 H20s4(CO)12P(C -C6H II), 124 0s3RuiCO)I,PPh, 127 Oss(CO)I5POMe, 127 Os,(CO)ISPPh, 127 H20%(CO)IS(1l3-PPh), 120 0%(CO)lsP(AuPPh3), 130

[H0s3(CO~Sl-, 149 H20s3(CO)SS2, 157 H20S3(CO~, 149, 155 HOs3(CO>s{Il-,,2-C(NMe2)O }S2, 157 0s3(CO)h-3-S)(1l3-NSiMe3), 149 0s3(CO)9S2, 157 OSlCO)IOS, 155 0s3W(CO)I2(PMe2Ph)S2, 159 [~(CO)dll-Shl, 217 H2~(CO)12S2' 158 0s3W(CO)II(PMe2Ph)2S, 153 O~(CO)12S, 155, 159 ~(CO)I3S, 157 (Oss(CO)ISS), 157 O~(CO)19S, 160

Se H20s3(CO~Se, 163 H2~(CO)12Se2' 165 O~(CO)12~' 165

Te H20s3(CO~Te, 163 0s3(CO~T~, 165

Oxidation-reduction reactions, 224 Oxidation state, 18 Oxidative addition, 21, 26, 244, 255 Oxidative coupling, 254 Oxidative fusion, 256, 266 Oxides, 338 Oxo complexes, 33 Oxygen, 142 Oxygen lone-pairs, 234

P 31PNMR,131 PH3,347 P=C(tBu), 58 ,,3_P3, 55, 235, 239, 240 ,,'-P,,59 P4, 43,50 PlGeMe3)3,379

Pb NaPb,294 PbCI2,18 PbC4, 18

P-block element chemistry, 4 Parasitic reactions, 347 Pd

Pd(S,Seh, 294 PdTe,372

Phosphides, 9, 360, 366, 378 Phosphido center, 295 Phosphines, 225 Phosphinidene complexes, 30 Phosphorus, 115 Phosphorus lone pair, 225 Photoelectron spectroscopy, 36, 211, 223

spin-orbit coupling, 225 vibrational fine structure, 225 XPS,229

Photoelectron spectrum (,,3-C3BunCo(CO)3, 236 (,,3-C3Bu~)Fe(CO)2NO, 237 (,,3_C6H9)Mn(CO)3, 244 (,,3_P3)W(OCH2Bu~3NMe2H, 237 (Me3CC)Mo(CH2CMe3h, 232 (Me3CC)Mo(OCMe(CF3h)3, 232, 234 (Me3CC)Mo(OCMe3h, 232 (Me3CC)Mo(OCMe3MCF3)3, 232 (N)Mo(Cl)3,233 (N)Mo(OCM~CF3)3, 234 (N)Mo(OCMe3)3, 234 CpFe(COhCH3, 240 CpFe(CO)2SiMe3,242 CpMn(COhHGePh3, 249 CpMn(COhHSiR3,246 CpMn(CO)2N2, 227 CpMn(COh,226 MeCpMn(CO)3 247

1I"-acceptor ligand, 225 11" complexes, 85 Polyarsenic rings, 264 Poly-phosphide anions, 379 Polyphosphorus rings, 264

397

398

Poly-silylpbospbines, 379 Polymer melt processing, 380 Polypbospbide chains, 294 Powders, 361 Prismane, 189 Promoted reactions, 270 Protonated "lone pair," 20 d' "Pseud~edral complexes," 22S Pt

B [CzB,HII(Pt4)],204 [Pt(PR3hCz~Ht], 204

C K(Pt(~~)C1)], 2

S Pt(PPb,MI,S-~N~, 47

Si [(Et'phPt(SiPbX)h, 39

Sn [(P·PhzPCHzPPbz),Pt,(SnF,W, 96 [Pt(SnO,),]'-, 202 Pt(SnO,)z(PEt,)zH-, 279

Quadruple bond, 199 Quantum size effi:c:t, 354 Quantum weD superlattice, 333

Re Oa

Re..(CO).z{OaRe(CO)'}41 92 In

o

P

Re.(CO).z{InRe(CO),}., 92

[H,Re,(CO),O]Z-, 144 [H,Re,(CO),OEW, 146 [H,Re,(CO),OHt, 144

Re,(CO) •• (/A4-PMe)(Pz-PMez) {/A,. PRe(CO),}, 127

Re.(CO).h4-PMe)" 127 S

(H,Re,(CO),S'Bu)-. 154 Si

Re~(PPh,h(SiEt,), 21 Tc

Cp.Re(H)(COh(TeH), 31 Rcductivcelimination,2SS Refractory vessel materials, 364 Reverse miceUes, 3S4 Rb

As [Rh.o(CO)zzAS)'-. 138

Rh (Cont.) B

(Pb,P)z(H)RbCzB,H" 279 Rb(BO,(CO)(O)PPb,)z, 22

N [~(CO)ISN]-. 114

o [H,Rb,Cp.,Ot. 144

P [II'-CsMe.Et)RhPzlz.49

P

Index

2(Cp·'RbMCO)(P.),62 [Rh,(COh.P]Z-,98, 131 [Rh.o(CO)uP]'-, 131 [Rb(II4-{PC(t-Bu)}z(II'CzB,HII>r. S8 Cp.Rb[II4-{PC(t-Bu)}zI, S8 Rb(PPb,)z(O)(IIz.p.). 43

Sb (Rb.z(CO),,sb]l-. 138

Si Rbz(SiEtH)z(CO)z(dppm)z, 49

Exo-nido-rhodacarboranes, 3S Rocket enaine coatings, 364 Ru

B

Bi

C

Cp.(PMe,)Ru(~-BaH7)' 36 K(Ru(CO)'(~-BaHs)I, 36, 2S4 RU(IIs-C,H,XCOh(~-BaHs), 36 H$u,(CO),BH, 119 HRu,(CO),BaHs, 77. 83,106 Ru,(CO),BH" 77, 79 HRu.(CO).zAuz(PPb,hB, 86 HRu.(CO).zB(H)C(Pb)CHPb, 112 HRu.(CO).zBHz, 86 HRu.(CO).zB{AuPPb,}z. 130 [R~CO).7Bt. 88 HR~(CO).7B, 76, 88

H,Ru,(CO),Bi, 139 HRu,(CO).IBi, 139

[Ru,(CO),CCO)2-. 80 HzRu,(CO),CzHz, 84 H,Ru,(CO),CMe, 119 Ru,Fe(CO).zCzPbz, 91 [CpWRu,(CO)uAMezt.91 HRu.(CO).zCC(Pb)CHPb, 112 Ru.(CO).zCzPbz, 91 [Ru.~Hz(CO).z). 183 RI4(CO).,c, 91 (R~CO) •• )Z-, 183

Index

Ru (Cant.)

S

N

o

P

S

Si

(Ru(NH3),(N1»)1+, 274 H1Ru3(CO)gNPh, 119 RU3(CO)lo(NOt, 275 HRu3(CO)IO(Il-NO), 102 RU3(COMC6~)NPh, 105 RuiCOh(NPhh, 103 RU3(CO)lo(NOH),99, 102 RU3(CO)IONPh, 103 RU3Co(CO)11N, 107 (Ru..(CO)11Nr, 107 H3R\4(CO)IIN, 108 Ru..(COhl(AuPPh3)N, 110 RU.(CO)11N(!l-NCO), 109 Ru..(COh2N(Il-NO), 109 Ru..(CO)12NH, 107 [Ru,(CO)I.NL 112 [R~(CO),~r, 114

H1Ru3(CO),(dppm}z0, 143 Ru)(COMIl-C0)(f,&-ClMO-c-C6Hllh, 146

H1Ru3(CO)gPPh, 119, 124 HRu3(CO)g(!l-PPhz), 124 RU3(COh(PPh)(S), 124 H2Ru..(CO)IZ(PPhh, 125 Ru..(CO)II(PPh)l, 125 Ru..(CO)I3(!l3-PPh), 127 HRus(CO)13(1l.-PPh)(1l1-PPhl), 127 RUS(CO)'S(PPh), 127 RUs(CO)ISPR, 127 RU7(CO)18(PPhh, 127 RU8(CO)19P(1l2-711,7l-CHzPh), 131 RU8(COhIP(1l4-PPh)(llrPPhl), 130

H2Ru3(CO)gS, 149 Ru..(CO)IISC(H)C(Ph), 161 {H2Ru)(CO)8Sh, 149

[Cp*(PMe3hRuSiPh1]+, 27 [HRu3(CO)lo(SiEt3)2r,26

Sn Ru(SnCl3).Cl~-, 279

S2, 47, 53 SOl, 225 S2~-' 254

Sandwich complexes, 54 Saturated

bond,17 ligands, 20

Sb CaSbz,294

Selenium, 163 Semiconductor, 333 Si

BaSi2.294 CaSi,294 CaSi2.293 m~Si=Sime5z 38 ShN., 368, 370 SiC, 368, 370 SiC!., 338

u-donor ligand, 225 Single crystal films, 334 Silane, 248 Silene,41 Silicides, 360, 365, 378 Silicon, 21, 94 Sily1ligand,242 Sintering, 367 Skutterudites,296 Sol-gel techniques, 380 Solid state chemistry, 335 Spectator ligand, 370 Stanylene, 27 Steric bulk, 30 Stuffed structure, 293 Structure

diamond, 292 Nan, 292 NiAs, 336

Substitution, 82, 154 Sulfur, 147 Superconducting properties, 364 Superlattice, 334, 351 Synthesis from the elements, 336

T -distortion, 302 Ta

B

C

N

o

(CpTan<Bz~h, 77 Cp*2Tal(Il-Brh(B2H6),47 Cp*Ta2(Bz~)z, 47

TaC, 362, 363 Np3Ta=CHBu', 377

TaN, 376, 377 [Ta( 71-CsHshH3], 196 (NpTaN)s, 377

399

400

Ta (Cont.) o (Cont.)

Cp*3Ta3Clllt-Cl)(It-O)30, 145 Cp*4TI40iOH)2, 146

P

S (Cp*)2Ta(PH2)(Me)H, 30

Ta2S, 316, 320, 325 Ta3S3, 317, 320 T3(;S,316 T3(;S11",281

Se Ta2Se,325

Te TI4 Te4Al , 326 T14Te4Cr - Ni, 326 TI4Te4Fe,327 TI4Te4Si ,326

Tantalum sulfides, 324 Tellurium, 163 Tensor Surface Harmonic Theory, 182, 184 TePR3,352 Tetrahedral semiconductors, 343 Thallium, 93 Thermal conductivity, 363 Thermocouples, 366 Thermodynamic control, 5 Thermoelectric devices, 366 Thin films, 333, 361 Ti

B TiB2, 365, 378

C

N

P

S

Si

TiC, 363, 374

TiN, 362, 363, 375 (TiCp*h(NHhN, 31, 377 {CP2 Ti(PMe3hHIt-N2), 45

[Li(DME)n][Ti(PCY2)4], 379 [Cp*TihP6, 60, 380

Cp*2 Ti(SHh, 31 CpTiSs,6

[CpTi«It-H)SiPhH)h,379 Cp2Ti2(Si2H4),379

Tin, 96 Tl

NaTl,292 Transition metal catalysts, 256

Transition metal-halide complexes, 33 Triple decker complexes, 50

Unsaturated complexes, 29 ligands, 22

v C CpV(~~)VCp, 265 Cp'V(1/6_C6H6)VCp', 60

N VN,362

Index

(Me3SiO)3 V N-Pt(Me)(PEt3h, 376 P

Cp* V(CO)[PC(t-Bu) h, 61 [Li(DME)n][V(PCY2)4], 379

Vapor deposition, 361, 367 Vapor phase epitaxy, 339

W As

[W(CO)shAs2, 45, 132 B

W(COMB2H4(PMe3hl, 34 W(CO)s[B2H4(PMe3h], 34

Bi

C Bi2{W(CO)sh, 138

WC,273 W2C,273 W(Me3CO)3CRu(COhCp, 29 W3(1t3-CR)(OR)9,211

Ge Br3GeW(Br)(COh(bipy), 26

N

o

P

S

WN,375 W3(1t3-NH)(OR) 10, 211

W02,373

[Li(DME)n][W(PCY2>sJ. 379 [W(COh(PR3hH2]' 194 (1/3_P3)W(OCH2Bu')3NMe2H, 237 (1/3_P3)W(OCH2Bu')3NMe2H, 239

[{W(CO)ShS4F+, 58 [WOs3(CO)12(PMe2Ph)(1t3-S)2], 217

Sb [W(COhhR2Sb2, 46

Index

W(Cont.) Sb (Cont.) Ph2S~{W(CO)sh. 132 S~{W(CO)sh, 132

Si CP2W(1I2-Si2Me4) 38 Cp2W(SI2Me4),379

Te [W(CO)shTe2,46 [W(CO)4Te3J2+, 56

Wear-resistant coatings, 366

Zintl complexes, 291 concept, 289

Zn N

S

Ca2ZnN2, 301, 307 ZnNSr, 301

ZnS, 352, 371

Zn (Cont.) Se

ZnSe,352,371 Zr

B

C

ZrB2,378

ZrC,362,363 Zr2~(PEt3MCH2=CH2)' 41 CsZr6114C, 315

H Zr6Ci12H,313

N

P

ZrN, 362, 375 {(Cp*hZrN2h(Il-N2),45

(Cp"hZr(P4),61 {Li(DME)][Zr(PCy2)S), 379 CP2Zr(PCy2h. 379 CP2Zr(PPh2)2, 379

Si, CSo.3Zr6114Si, 315

401