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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors MJ2955 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : h FE =20-70@I C = -4A ·Collector-Emitter Saturation Voltage- : V CE(sat )= -1.1V(Max)@ I C = -4A ·Complement to Type 2N3055 APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T a =25) SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base Voltage -100 V V CER Collector-Emitter Voltage -70 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -7 V I C Collector Current-Continuous -15 A I B B Base Current -7 A P C Collector Power Dissipation @T C =25115 W T J Junction Temperature 200 T stg Storage Temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance,Junction to Case 1.52 /W isc Websitewww.iscsemi.cn

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Page 1: INCHANGE Semiconductor isc - mantech.co.za · INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors MJ2955 isc Website:

INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistors MJ2955 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-

: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage-

: VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055 APPLICATIONS·Designed for general-purpose switching and amplifier

applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage -100 V

VCER Collector-Emitter Voltage -70 V

VCEO Collector-Emitter Voltage -60 V

VEBO Emitter-Base Voltage -7 V

IC Collector Current-Continuous -15 A

IBB Base Current -7 A

PCCollector Power Dissipation @TC=25℃ 115 W

TJ Junction Temperature 200 ℃

Tstg Storage Temperature -65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.52 ℃/W

isc Website:www.iscsemi.cn

Page 2: INCHANGE Semiconductor isc - mantech.co.za · INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors MJ2955 isc Website:

INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistors MJ2955

ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0 -60 V

VCER(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; RBE= 100Ω -70 V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.1 V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A -3.0 V

VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V -1.5 V

ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -0.7 mA

ICEX Collector Cutoff Current VCE= -100V; VBE(off)= -1.5V VCE= -100V; VBE(off)= -1.5V,TC= 150℃ -1.0

-5.0 mA

IEBO Emitter Cutoff Current VEB= -7.0V; IC=0 -5.0 mA

hFE-1 DC Current Gain IC= -4A ; VCE= -4V 20 70

hFE-2 DC Current Gain IC= -10A ; VCE= -4V 5.0

Is/bSecond Breakdown Collector Current with Base Forward Biased VCE= -40V,t= 1.0s,Nonrepetitive -2.87 A

fT Current Gain-Bandwidth Product IC= -0.5A ; VCE= -10V;ftest= 1.0MHz 2.5 MHz

isc Website:www.iscsemi.cn 2

Page 3: INCHANGE Semiconductor isc - mantech.co.za · INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors MJ2955 isc Website:

INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistors MJ2955

isc Website:www.iscsemi.cn