Impurity Diffusion and Gettering in Siliconassets.cambridge.org/97811074/05608/frontmatter/9781107405608… · Impurity Diffusion and Gettering in Silicon ... Volume 7—Metastable

Impurity Diffusion and Getteringin Silicon

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Cambridge University Press978-1-107-40560-8 - Impurity Diffusion and Gettering in Silicon: Materials ResearchSociety Symposia Proceedings: Volume 36Editors: Richard B. Fair, Charles W. Pearce and Jack WashburnFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS

ISSN 0272 - 9172

Volume 1—Laser and Electron-Beam Solid Interactions and Materials Processing,J. F. Gibbons, L. D. Hess, T. W. Sigmon, 1981

Volume 2—Defects in Semiconductors, J. Narayan, T. Y. Tan, 1981Volume 3—Nuclear and Electron Resonance Spectroscopies Applied to Materials

Science, E. N. Kaufmann, G. K. Shenoy, 1981Volume 4—Laser and Electron-Beam Interactions with Solids, B. R. Appleton,

G. K. Celler, 1982Volume 5—Grain Boundaries in Semiconductors, H. J. Leamy, G. E. Pike,

C. H. Seager, 1982Volume 6—Scientific Basis for Nuclear Waste Management, S. V. Topp, 1982Volume 7—Metastable Materials Formation by Ion Implantation, S. T. Picraux,

W. J. Choyke, 1982Volume 8—Rapidly Solidified Amorphous and Crystalline Alloys, B. H. Kear,

B. C. Giessen, M. Cohen, 1982Volume 9—Materials Processing in the Reduced Gravity Environment of Space,

G. E. Rindone, 1982Volume 10—Thin Films and Interfaces, P. S. Ho, K.-N. Tu, 1982Volume 11—Scientific Basis for Nuclear Waste Management V, W. Lutze, 1982Volume 12—In Situ Composites IV, F. D. Lemkey, H. E. Cline, M. McLean, 1982Volume 13—Laser Solid Interactions and Transient Thermal Processing of Materials,

J. Narayan, W. L. Brown, R. A. Lemons, 1983Volume 14—Defects in Semiconductors II, S. Mahajan, J. W. Corbett, 1983Volume 15—Scientific Basis for Nuclear Waste Management VI, D. G. Brookins, 1983Volume 16—Nuclear Radiation Detector Materials, E. E. Haller, H. W. Kraner, W. A.

Higinbotham, 1983Volume 17—Laser Diagnostics and Photochemical Processing for.Semiconductor

Devices, R. M. Osgood, S. R. J. Brueck, H. R. Schlossberg, 1983Volume 18—Interfaces and Contacts, R. Ludeke, K. Rose, 1983Volume 19—Alloy Phase Diagrams, L. H. Bennett, T. B. Massalski, B. C. Giessen,

1983Volume 20—Intercalated Graphite, M. S. Dresselhaus, G. Dresselhaus, J. E. Fischer,

M. J. Moran, 1983Volume 21—Phase Transformations in Solids, T. Tsakalakos, 1984Volume 22—High Pressure in Science and Technology, C. Homan, R. K. MacCrone,

E. Whalley, 1984Volume 23—Energy Beam-Solid Interactions and Transient Thermal Processing,

J. C. C. Fan, N. M. Johnson, 1984Volume 24—Defect Properties and Processing of High-Technology Nonmetallic

Materials, J. H. Crawford, Jr., Y. Chen, W. A. Sibley, 1984






MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS

Volume 25—Thin Films and Interfaces II, J. E. E. Baglin, D. R. Campbell, W. K. Chu,1984

Volume 26—Scientific Basis for Nuclear Waste Management VII, G. L. McVay, 1984Volume 27—Ion Implantation and Ion Beam Processing of Materials, G. K. Hubler,

O. W. Holland, C. R. Clayton, C. W. White, 1984Volume 28—Rapidly Solidified Metastable Materials, B. H. Kear, B. C. Giessen, 1984Volume 29—Laser-Controlled Chemical Processing of Surfaces, A. W. Johnson,

D. J. Ehrlich, H. R. Schlossberg, 1984Volume 30—Plasma Processing and Synthesis of Materials, J. Szekely, D. Apelian,

1984Volume 31—Electron Microscopy of Materials, W. Krakow, D. Smith, L. W. Hobbs,

1984Volume 32—Better Ceramics Through Chemistry, C. J. Brinker, D. E. Clark, D. R.

Ulrich, 1984Volume 33—Comparison of Thin Film Transistor and SOI Technologies, H. W. Lam,

M. J. Thompson, 1984Volume 34—Physical Metallurgy of Cast Iron, H. Fredriksson, M. Hillerts, 1985Volume 35—Energy Beam-Solid Interactions and Transient Thermal Processing/1984,

D. K. Biegelsen, G. Rozgonyi, C. Shank, 1985Volume 36—Impurity Diffusion and Gettering in Silicon, R. B. Fair, C. W. Pearce,

J. Washburn, 1985Volume 37—Layered Structures, Epitaxy and Interfaces, J. M. Gibson, L. R. Davvson,

1985Volume 38—Plasma Synthesis and Etching of Electronic Materials, R. P. H. Chang,

B. Abeles, 1985Volume 39—High-Temperature Ordered Intermetallic Alloys, C. C. Koch, C. T. Liu,

N. S. Stoloff, 1985Volume 40—Electronic Packaging Materials Science, E. A. Giess, K.-N. Tu,

D. R. Uhlmann, 1985Volume 41— Advanced Photon and Particle Techniques for the Characterization of

Defects in Solids, J. B. Roberto, R. W. Carpenter, M. C. Wittels, 1985Volume 42—Very High Strength Cement-Based Materials, J. F. Young, 1985Volume 43—Coal Combustion and Conversion Wastes: Characterization, Utilization,

and Disposal, G. J. McCarthy, R. J. Lauf, 1985Volume 44—Scientific Basis for Nuclear Waste Management VIII, C. M. Jantzen,

J. A. Stone, R. C. Ewing, 1985











MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS VOLUME 36

Impurity Diffusion and Getteringin SiliconSymposium held November 27-30,1984, Boston, Massachusetts,U. S. A.

EDITORS:

Richard B. FairMicroelectronics Center of North Carolina, Research Triangle Park,North Carolina, U. S. A.

Charles W. PearceAT&T Technologies, Allentown Pennsylvania, U. S. A.

Jack WashburnUniversity of California, Berkeley, California, U. S. A.

IM1RIS1 MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania






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Contents

PREFACE xi

ACKNOWLEDGMENTS xiii

PART I: IMPURITY BEHAVIOR

DIFFUSION, COMPLEXING AND PRECIPITATION OF TRANSITIONMETALS IN SILICON

E.R. Weber 3

ASSESSMENT OF METALLIC TRACE CONTAMINANTS ON SILICONWAFER SURFACES

H.J. Rath, P. Stallhofer, D. Huber, P. Eichinger,and I. Ruge 13

PALLADIUM-TEST: A TOOL TO EVALUATE GETTERING EFFICIENCYK. Graff, H.A. Hefner, and H. Pieper 19

GETTERING OF METALLIC IMPURITIES IN SILICONA. Ourmazd and W. Schrbter 25

LOW TEMPERATURE INTERACTIONS BETWEEN GOLD AND IRON INSILICON

S.D. Brotherton, P. Bradley, and A. Gill 31

TRANSITION METAL CONTAMINATION OF EPITAXIAL SILICONM.P. Scott, L. Caubin, D.C. Chen, E.R. Weber,J. Rose, and T. Tucker 37

RAPID DIFFUSION OF MOLYBDENUM TRACE CONTAMINATION INSILICON

S.P. Tobin, A.C. Greenwald, R.G. Wolfson, D.L. Meier,and P.J. Drevinsky 43

PHYSICAL MODELING OF BACKSIDE GETTERINGG.B. Bronner and,J.D. Plummer 49

GETTERING OF IMPURITIES DURING HIGH DOSE IMPLANTATION OFAl OR Cr INTO Si AND THE RESULTING EFFECT ON STRUCTUREAND COMPOSITION

F. Namavar, J.I. Budnick and F.A. Otter 55

EXTRINSIC GETTERING WITH EPITAXIAL MISFIT DISLOCATIONSA.S.M. Salih, W. Maszara, H.J. Kim and G.A. Rozgonyi 61






PART II: IMPURITY DIFFUSION

STRESS-ASSISTED DIFFUSION OF BORON AND ARSENIC IN SILICONM.L. Manda, M. Shepard, R.B. Fair, and H.Z. Massoud 71

PRESSURE DEPENDENCE OF ARSENIC DIFFUSIVITY IN SILICONE. Nygren, M.J. Aziz, D. Turnbull, J.F. Hays,J.M. Poate, D.C. Jacobson, and R. Hull 77

DIFFUSION OF DOPANTS IN (111) SILICON DURING HIGHTEMPERATURE HEAT TREATMENT IN NITROGEN

T. Kook and R.J. Jaccodine 83

ENHANCED CARBON DIFFUSION IN SILICON DURING 900 CANNEALING

L.A. Ladd, J.P. Kalejs, and U. Gosele 89

DIFFUSION OF BORON FROM POLYSILICON AT HIGH CONCENTRATIONSR.F. Lever, B. Garben, C M . Hsieh, and W.A. Orr Arienzo 95

EFFECT OF PRESSURE ON SELF DIFFUSION IN CRYSTALLINE SILICONM.J. Aziz, E. Nygren, W.H. Christie, C.W. White,and D. Turnbull 101

THE INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERINGIN SILICON

U. Gosele and T.Y. Tan "" 105

DIFFUSION MECHANISMS AND NONEQUILIBRIUM DEFECTS IN SiD. Mathiot and J.C. Pfister 117

INVESTIGATION OF POINT DEFECTS IN Si BY IMPURITY DIFFUSIONS. Mizuo and H. Higuchi 125

THE DIFFUSION OF PHOSPHORUS IN SILICON FROM HIGH SURFACECONCENTRATIONS

H.F. Schaake 131

THE INFLUENCE OF DISLOCATIONS ON THE DIFFUSION BEHAVIOROF GOLD IN SILICON

N.A. Stolwijk and J. Holzl 137

ANNEALING AND DIFFUSION OF BORON IN SELF-IMPLANTED SILICONBY FURNACE AND ELECTRON BEAM HEATING

D.J. Godfrey, R.A. McMahon, D.G. Hasko, H. Ahmed,and M.G. Dowsett 143

TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS INION IMPLANTED SILICON

S.J. Pennycook, J. Narayan, and R.J. Culbertson 151

viii






PART III: OXYGEN IN SILICON

INTERNAL GETTERING IN CZOCHRALSKI SILICONR.A. Craven 159

INTERNAL GETTERING IN OXYGEN-FREE SILICONK. Nauka, J. Lagowski, and H.C. Gatos 175

EBIC EVIDENCE FOR CARBON-BASED GETTERING IN EFG SILICONR. Gleichmann, J.P. Kalejs and D.G. Ast 181

DEFECT FORMATION AND HYDROGEN TRAPPING IN H+ IMPLANTEDFZ SILICON

W.J. Choyke, J.A. Spitznagel, N.J. Doyle, S. Wood,and R.B. Irwin 187

CHARACTERIZATION OF DENUDED ZONES IN SILICON WAFERSH.J. Rath, J. Reffle, D. Huber, P. Eichinger,F. Iberl, and H. Bernt 193

EFFECTS OF PROCESSING ON STRUCTURAL DEFECTS IN SILICONL.J. Cheng 199

THE CHEMISTRY OF OXYGEN IN SILICONJ.C. Mikkelsen, Jr. 205

A MODEL THAT DESCRIBES THE ROLE OF OXYGEN, CARBON, ANDSILICON INTERSTITIALS IN SILICON WAFERS DURING DEVICEPROCESSING

R.A. Hartzell, H.F. Schaake, and R.G. Massey 217

ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERINGSCHEMES IN SILICON

K.H. Yang and T.Y. Tan _ 223

EFFECT OF HEAVY DOPING ON THE NUCLEATION AND GROWTH OFBULK STACKING FAULTS IN SILICON

C.W. Pearce, T. Kook, and R.J. Jaccodine 231

NUCLEATION TIME EFFECT ON INTRINSIC GETTERINGC-C.D. Wong, M.L. Malwah, and L. Pollock 239

GETTERING AND PRECIPITATION PHENOMENA IN SEMICONDUCTORSD.K. Sadana 245

OXYGEN PRECIPITATION IN CMOS WAFERSL. Forbes, F.D. Whitwer, and J.D. Peng 257

EFFECT OF DOPANT CONCENTRATION ON THE GROWTH OF OXYGENPRECIPITATES IN SILICON

S. Matsumoto, I. Ishihara, H. Kaneko, H. Harada,and T. Abe 263

ix






INFLUENCE OF MICRO-DEFECT MORPHOLOGY ON INTRINSICGETTERING EFFECTIVENESS AND DURABILITY IN CMOS EPITAXIALPROCESSING

J.O. Borland 269

TEMPERATURE RAMPING FOR NUCLEATION OF OXYGEN PRECIPITATESIN SILICON

R.F. Pinizzotto, H.F. Schaake, R.G. Massey,and D.W. Heidt 275

AUTHOR INDEX 281

SUBJECT INDEX 283






Preface

The Symposium on Impurity Diffusion and Getteirng in Semiconductorsprovided a rare opportunity for workers active in the field to come together.

Topics included impurity behavior, diffusion and oxygen in silicon.Precipitation and complexing of metals in silicon as well as their electricalactivity, solubility and diffusivity were discussed. Analytical techniques forimpurity mapping or detection were compared and the importance of usingseveral analytical tools were stressed. Gettering processes were also discussed.Evidence was presented that shows gettering of Ni, Au and Fe to be governed bythe availability of self interstitials in silicon. Methods of gettering metallicimpurities were presented such as deposited films, implantation damage andepitaxial misfit dislocations.

The role of point defects in silicon and their influence on diffusion, extrinsicdefect growth and gettering was presented in two sessions. Questions addressedwere the relative contributions of vacancies and self-interstitials to impuritydiffusion as well as their own diffusivities and concentrations. New dataregarding the strain and pressure dependence of diffusion was presented, but nodefinitive conclusions can be made regarding the mechanisms involved.

Two sessions were also devoted to oxygen in silicon. Mechanisms regardingintrinsic gettering, denuded zone formation, nucleation and growth of oxygenprecipitates were addressed. Most of the papers presented in these informativesessions are included in this volume.

R.B. FairC.W. PearceJ. Washburn

February 1985

x i











Acknowledgments

This volume represents the Proceedings of the Symposium on ImpurityDiffusion and Gettering in Semiconductors, which was held as Symposium C atthe Material's Research Society Meeting, November 27—30, 1984 in Boston.

The symposium owed its success to the support of many individuals:

speakers and authors whose papers are contained in this volume

session chairpersons: Z. Liliental, JJ. Wortman and RJ. Jaccodine

the reviewers who willingly refereed the manuscripts submitted

the MCNC staff who helped type and format this book as well as takecare of correspondence

The Symposium could not have taken place without the financial support ofthe Army Research Office, Office of Naval Research and AT&T Technologies.

To all of these scientists, staff and supporting institutions, the editors wishto express their highest appreciation.

xiii






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Impurity Diffusion and Gettering in Siliconassets.cambridge.org/97811074/05608/frontmatter/9781107405608… · Impurity Diffusion and Gettering in Silicon ... Volume 7—Metastable