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II-VI SEMICONDUCTING COMPOUNDS 1967 International Conference edited by D. G. Thomas Bell Telephone Laboratories W. A. Benjamin, Inc. New York 1967 I Amsterdam

II-VI SEMICONDUCTING COMPOUNDS 1967 International

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Page 1: II-VI SEMICONDUCTING COMPOUNDS 1967 International

II-VI SEMICONDUCTING COMPOUNDS 1967 Internat ional Conference

edited by D. G. Thomas

Bell Telephone Labora to r i e s

W. A. Benjamin, Inc. New York

1967

I

Amsterdam

Page 2: II-VI SEMICONDUCTING COMPOUNDS 1967 International

II-VI SEMICONDUCTING COMPOUNDS 1967 Internat ional Conference

CONTENTS

Pre face Ill

Session A-I

Optical P r o p e r t i e s of Defects in II-VI Compounds S. Shionoya. 1

E lec t ron Spin Resonance of Defect Cen t e r s in II-VI Semiconduc­to r s

J . Schneider 40

Session A-II

The Thermoluminescence and Photoluminescence of ZnS:Er +

A. Halperin, W.Y. Chu, G. A. Haber , and J . J . Dropkin 68

Cor re la t ion Between the Absorption and Exci tat ion Spectra due to Cu2+ Impur i t i e s and the Valence Band St ruc ture of ZnS

I. B r o s e r , K. -H. F ranke , and H. - J . Schulz 81

Ligand- Field -Band Theory of Copper in ZnO:Cu and ZnS:Cu W. Walter and J . L. B i rman 89

Exciton Elec t ro re f lec tance in II-VI Compounds R. A. F o r m a n and M. Cardona 100

Effect of Uniaxial Compress ion on the Exciton Spectrum of CdS J . E. Rowe, M. Cardona, and F . H. Pollack 112

Growth and Optical P r o p e r t i e s of Epi taxia l Thin F i lms of Some II-VI Compounds

R. Ludeke and W. Paul 123

v

Page 3: II-VI SEMICONDUCTING COMPOUNDS 1967 International

Light-Modulated Reflectance of Semiconductors E . Y. Wang, W. A. Albe r s , and С. Е . Bleil 136

Session A-III

Crys t a l Imperfec t ions in Vapor-Grown CdS B. N. Das and M. Weinstein 147

Polytypism in ZnS Crys ta l s I. T . Ste inberger and S. Mardix 167

Dislocation Effects on Luminescence of CdS Crys t a l s

H. Mitsuhashi , H. Komura , and J . Chikawa 179

Inhomogeneit ies in the Resis t iv i ty of Single Crys t a l Cadmium Sulfide

F . L. Engl ish and M. K. P a r s o n s 190

Incorporat ion Mechanisms in Donor-Doped II-VI Compounds

J . Dieleman 199

Some E l e c t r i c a l and Optical P r o p e r t i e s of Cen t r e s in Zinc Selenide Due to the Incorporat ion of Copper and Iron

J . J . Haans t ra 207

Session В-I

Crys ta l Growth of II-VI Compounds M. R. Lorenz 215

Defect Charac te r i za t ion : Diffusivity and E l e c t r i c a l Measurements

H. H. Woodbury 244

Optical Absorption and Band Edge P a r a m e t e r s of Group II-VI Semiconductors

J . O. Dimmock 277

VI

Page 4: II-VI SEMICONDUCTING COMPOUNDS 1967 International

Session В-II

Excitons and the Absorption Edge in ZnTe D. T. F . Marple and M. Aven 315

Absorption " E d g e s " in CdS and ZnO B. Segall 327

Exci ton-Phonon In terac t ion in CdS E. Gutsche and J . Voigt 337

Phonon-Assis ted Emis s ion of F r e e Exci tons in CdS G. D. Mahan and B. Segall 349

Exciton Line Widths and the Phonon In terac t ion in CdS

C . E . B l e i l a n d J . G. Gay 360

Luminescence from Inelas t ic Scat ter ing of Polar i tons by Longitudinal Optical Phonons

E . C . Tai t , D .A. Campbel l , J . R . Packa rd , and R. L. Weiher 370

Excitons Bound to Charged Conors M. Suffczynski and W. Gorzkowski 384

Session B-III

Synthesis and Crys t a l Growth of CdSe, ZnTe, and ZnSe

A. Libicky 389

Growth of CdS from Metall ic Solution M. Rubenstein and F . M. Ryan 402

ZnS Single C r y s t a l s Grown f rom Gall ium and Indium Melts

M. Harsy , G. Gergely, J . Schanda, M. Somogyi, P . Sviszt, and G. Szigeti 413

Homogeneity Range and C o n c e n t r a t i o n - P r e s s u r e I so the rms for HgSe

R. F . Breb r i ck and A . J . S t r auss 425

VII

Page 5: II-VI SEMICONDUCTING COMPOUNDS 1967 International

Self-Diffusion and Defect Equi l ibr ia in CdSe P . M . Bor senbe rge r , D .A. Stevenson,and R. A. B u r m e i s t e r 439

Cadmium Diffusion in Cadmium Tel lur ide R. С Whelan and D. Shaw 451

Session C - I

Pseudopotential Calculations for II-VI Compounds M. L. Cohen 462

Energy Band St ruc ture and Optical Spectrum of Severa l II-VI Compounds

F . Herman , R. L. Kor tum, C . C . Kuglin, and J . L. Shay 503

Exper imenta l Studies of Interband Trans i t ions above the Fundamental Edge in the II-VI Semiconducting Compounds

F . H. Pollak 552

Session C - II

KKR Calculat ions for Cubic II-VI Compounds J . T reusch , P . Eckel t , and O. Madelung 588

Spin-Orbit Splitting of the Г-Poin t Valence Bands of Hexagonal CdS, CdSe, ZnS, and ZnSe

Т. С Coll ins, R. N. Euwema, and J . S. DeWitt 598

A Pseudopotent ial Calculation of the CdS:Se Mixed Alloy System

J . S . DeWitt, R . N . Euwema, a n d T . C . Collins 611

Some P r o b l e m s of Studying the Band Structure of Di so rde red Systems

V. L. Bonch-Bruevich 623

The Fundamental Reflectivity of ZnS Single Crys t a l s with 3C, 2H, 4H, 6H, and 10H St ruc tures

J . W. B a a r s 631

VIII

Page 6: II-VI SEMICONDUCTING COMPOUNDS 1967 International

Electronic States of Homogeneous and Inhomogeneous Mixed Semiconductors

T. Gora and F. Williams 639

The Determination of Electronic Band Structure Using Photoemission Studies

J. L. Shay and W. E. Spicer 651

Session С-III

Recombination Processes in CdS under High Excitation

C. Benoit a la Guillaume, J .M. Debever, and F. Salvan 669

High Power and Efficiency in CdS and CdSe Electron Beam Pumped Lasers

C.E. Hurwitz .682

The basing Transitions of CdS C.W. Litton and D. С Reynolds 694

Recombination and Luminescence Processes in CdS and CdSe Single Crystals

V.E. Lashkarev, M.K. Sheinkman, and I. B. Yermolovich 711

Afterglow in ZnS Due to Tunneling N. RiehL G. Baur, L. Mader, and P. Thoma 724

Isoelectronic Traps in II-VI Semiconductors J. L. Merz and R. T. Lynch 730

Photoluminescence of CdTe Crystals V.S. Vavilov, A.A. Gippius, andJ .R . Panossian 743

Session D- I

IX

Page 7: II-VI SEMICONDUCTING COMPOUNDS 1967 International

Latt ice Scattering of E lec t rons in Cadmium Sulfide K. Kobayashi . . . . . . . . . . . , , . . . , . , 755

Radiative Recombination at Shallow Cen te r s J . J . Hopfield 786

Theory of Non-Linear Effects in Ult rasonic Amplification in P iezoe lec t r i c Semiconductors

V. L. Gurevi tch 805

Session D- II

Valence Band Structure of Wurtzi te Type Crys ta l s E . Gutsche and E. Jahne 825

The g - F a c t o r of Conduction Band Elec t rons in C rys t a l s of CdSi_ x Se x

W. W. P ipe r 839

The St ruc ture of the Optical Absorption Edge in CdSe and CdTe

C. Konak, J . Dil l inger, and V. P r o s s e r . . . . . . . . . , . . . . . . . 8 5 0

Low T e m p e r a t u r e Photoluminescence from CdS D. G. Thomas , R. Dingle, and J . D. Cuthbert . . . . . . . .863

Fundamental Absorption Edge of Tr igonal HgS R. Zallan . . . . . . . . . . . . . . . 877

Band St ruc ture of C d x H g ^ T e Mixed C r y s t a l s L. Sosnowski and R. R. Galazka 888

Elec t ronic g -Fac to r in Mercury Selenide from the De Haas-Van Alphen Effect

L. M. Bliek and G. Landwehr . . . . . . . . . . . . . . . . . . . . . 897

Session D- III

'l

Page 8: II-VI SEMICONDUCTING COMPOUNDS 1967 International

Nonlinear Theory of Cur r en t Saturation and Osci l la t ion in Cadmium Sulfide

N. Mikoshiba and H. Ozaki 910

Bri l louin Scat ter ing Studies of Acoustic Shear Waves Generated in CdS and ZnO Subjected to High E lec t r i c F ie lds

J . Zucker , S. Zemon, and J . H. Wasko 919

Observat ion of Elec t ron-Phonon Packe t s in Low-Resis t iv i ty CdS by Microwave T r a n s m i s s i o n and Bri l louin-Scatter ing Measurements

W. Wettling 928

Acous to-Elec t r i ca l Phonon Generat ion Observed in X-Ray Diffraction Microscopy

G .O. Müller , H. Pe ibs t , E. Schnurer and H. Thiel 936

High E lec t r i c Field Effects in ZnO Single Crys t a l s

N . I . Meyer , E . Mosekilde, and M. H. J^ rgensen 950

The Second Cur ren t Saturation of Non-Ohmic Behavior in CdS

I. Uchida and T . Ishiguro 963

Format ion of Acous to-Elec t r i c Domains in Semi ­conducting CdS at High E lec t r i c F ie lds

A. Ishida and Y. Inuishi 971

Session E - I

Band and T r a n s p o r t P a r a m e t e r s of Hg-Chalcogenides T . C . Harman 982

Optical Studies of Lat t ice Vibrat ions in II-VI Semi ­conducting Compounds

M. BalkanskL 1007

Lat t ice Dynamics of Semipolar C rys t a l s H. Bilz 1040

X]

Page 9: II-VI SEMICONDUCTING COMPOUNDS 1967 International

Session E - II

Quantum Osci l la t ion in C d x H g i - x T e W. Gi r ia t 1058

Invers ion Asymmet ry Splittings from Osci l la tory Magnetores is tance in HgTe

S.H. Groves , L . M . Roth, and P . W . Wyatt 1069

Low-Tempera tu re Reflection and Elect roref lec t ion Studies of Interband Magneto-Optical Trans i t ions in HgTe

C. R. Pidgeon and S. H. Groves 1080

T e m p e r a t u r e Dependence of the Band St ruc ture of HgTe from P r e s s u r e Measuremen t s

R. Piotrzkowski and S. Porowski 1090

Magnetores is tance Osci l la t ions in HgTe I. M. Tsidi lkovski and A . I . Ponomarev 1103

Piezores i s t ive P r o p e r t i e s of HgTe O. N. Tufte and E . L. Ste lzer 1110

Elec t ronic P r o p e r t i e s of Cd x Hgi_ x Te Alloys in the Vicinity of the Semimeta l -Semiconductor Trans i t ion

С Ver ie 1124

Session E - III

Infrared Absorption of Local ized Vibrat ion Due to Lithium and Aluminum in Zinc Selenide

S. Ibuki, H. Komiya, A. Mitsuishi , A. Manabe, and H. Yoshinaga 1140

Inf ra - red Active Lat t ice Modes of the Mixed Crys ta l System Cdj_ xZn xS

G. Lucovsky, E . Lind, and E. A. Davis 1150

XII

Page 10: II-VI SEMICONDUCTING COMPOUNDS 1967 International

Phonons in Mixed-Crys ta l System CdS xSei_ x

J . F . P a r r i s h , C .H. P e r r y , O. Brafman, I. F . Chang, and S. S. Mit ra 1164

The Raman Scattering Intensi t ies of Zincblende Type Crys t a l s

S. Ushioda, A. Pinczuk, W. Taylor , and E. Burs te in 1185

Lat t ice Dynamics and P r o p e r t i e s of CdS: Wurtzi te M. A. Nusimovici and J . L. B i rman 1204

Spin Relaxation of M n 2 + in Cubic ZnS:Mn, Li C R . Wagner, J . G . Cas t l e , and J . Murphy 1212

Tempera tu r e Dependence of the Nuclear Spin-Latt ice Relaxation in S ingle-Crys ta l Cadmium Sulfide

D . C . Look and G.G. Wepfer 1222

Session F - I

E lec t ro luminescence in II-VI Compounds M. Aven 1232

The Photoconductor-Metal Contact

W. Ruppel 1260

Session F - II

Gunn Effect in ZnSe and CdTe

G. W. Ludwig 1287 MgTe-CdTe, a New Mate r ia l for Visible Light-emitt ing Diodes

K. Itoh 1296

XIII

Page 11: II-VI SEMICONDUCTING COMPOUNDS 1967 International

Photoelect r ic P r o p e r t i e s of CdxHg^_xTe Graded-Gap S t ruc tu res

G. Cohen-Solal , Y. Marfaing, and P . Kamadjiev 1304

Photoelectronic P r o p e r t i e s of p-Type ZnSe:Cu Crys ta l s

G. B . Stringfellow and R. H. Bube 1315

Behavior of Holes and Elec t rons in CdS Revealed by L a s e r Excitat ion

K. Maeda and A. K a s a m i 1323

On the P r o p e r t i e s of Some Defect Cen te r s in CdTe N. B. Url i 1335

Session F - III

E lec t ron Pa ramagne t i c Resonance Studies of Photo-Induced Copper and Silver Cen te r s in CdS

K. Morigaki 1348

Photo-Induced Pa ramagne t i c Resonance in ZnTerPb K. Suto and M. Aoki 1359

An EPR Study of the Effects of Phosphorus and Lithium Compensat ion on Rare Ear th Doping in the II-VI Compounds

R. S. Ti t le , B . L . Crowder , a n d J . W . Mayo 1367

Theory of Elec t ron Paramagne t i c Resonance of F e 3 + in Zincblende and Wurtzite Structure II-VI Compounds

H. Watanabe 1381

Rare Ea r th Impur i t i es in II-VI Compounds

R. K. Watts and W. C. Holton 1390

Discuss ion 1401

List of Contr ibutors 1487

XIV