- 1. IHP TechnologyRoadmap Update and FutureResearch Topics
MOS-AK Meeting, April 2-3, 2009 2. IHP Frankfurt (Oder)
- 1991 Member of the Leibniz Association
- 1999: I nnovations forH igh
- P erformance microelectronics 1000 m class 1 clean room,
- 4 core competencies: Materials research,
- wireless communication systems
- Institutional funds: 16 million
- Third-party funds: 11.5 million
- ERDF funds: 12.7 million ( European Regional Development
Fund)
3. Core Competencies
- Silicon based high-frequency technologies, circuits and systems
for wireless and broadband communication
- System solutions for wireless and broadband communication
- Prototypes of mixed-signal ICs;system-on-chip
- Analog circuits in the higher GHz-range (frontends,
converter..)
- Technology platform for wireless and broadband
communication
- Performance increasing and functionality extending modules for
standard
- New materials for microelectronics technology
- incl. integration (e.g. SiGe:C, high-K, nanostructures)
4.
Outline 5. Technology Vision
- High Value Added Technologies
- for Wireless and Broadband Applications
6. Technology Vision CMOS Baseline Technology Modular extension
of CMOS technologies SiGe:C HBT LDMOS Flash Memories Passive
Devices 7. Technology Roadmap for MPW September 2008 * Qual. on
customer request Development Early access Qualified 8. IHPs
Technology Focus: More than Moore Source: ITRS Roadmap 2005 IHP:
0.13 m BiCMOS THz Devices Si Photonics MEMS 9. Technology Vision
Future Research Topics CMOS Baseline Technology Modular extension
of CMOS technologies Diversification SiGe:C HBT LDMOS Flash
Memories Passive Devices THz Devices HBTs 10. THZ HBTs 11.
-
- 3-year (2/08-1/11)IP project of 7 thFramework Program
-
- 0.5 THz SiGe Heterojunction Bipolar Transistor
-
- For the future development of communication, imaging and radar
applications
-
- 15 partners from industry and academia in 5 countries
-
-
- ST, Infineon, IMEC, IHP,XMOD ,GWT-TUD, ENSEIRB, Bunderwehr Uni.
Munich, Univ. of Neaples, Univ. of Linz, Univ. of Siegen, Univ. of
Wuppertal
-
- 9.7 million founded by European Commission
- For more information see www.dotfive.eu
DOTFIVE Project 12. DOTFIVE Project Today's state-of-the-art
SiGe HBTs achieve roughly a maximum operating frequency of 300 GHz
at room temperature.With Dotfive Europe is getting ahead of the RF
ITRS roadmap: (www.dotfive.eu) 13. Generations of IHPs High-Speed
HBTs
- Record gate delay of 2.5 ps
- Digital circuit speed benchmarked by ring oscillator gate
delay
- Fastest circuit speed achieved in any Si IC technology
IEDM 2008: SiGe HBT module with 2.5 ps gate delay 14. Technology
Vision Future Research Topics CMOS Baseline Technology Modular
extension of CMOS technologies Diversification SiGe:C HBT RF LDMOS
Flash Memories Passive Devices THz Devices HBTs MEMS Integration
15. MEMS integration in BiCMOS
-
- Design and fabrication of dedicated MEMS components for Radio
Frequency ICs
-
- Integration of MEMS processing technique to BiCMOS
-
- RFMEMS: High-Q passives, RFMEMS Switches
-
- Deep-Silicon Etching; Substrate etching under passives,
TSVs,Sensors
RFMEMS Switches Si Deep-Silicon Etching, TSV Etched Region
Sensors 16. Technology Vision Future Research Topics CMOS Baseline
Technology Modular extension of CMOS technologies Diversification
SiGe:C HBT LDMOS Flash Memories Passive Devices THz Devices HBTs?
MEMS Integration Optical function Si Photonics 17. Silicon
Photonics ( Source : Intel)
- Photonics electronics functional integration on CMOS
(HELIOS)
18. Si Photonics: Waveguide Integration
- Waveguide preparation in IHP technology
- High slope & minimal roughness
- Small waveguide losses ( reduced capacitances + low silicide
resistance + enhanced SIC E B C 100nm 100nm E B C 24. CMOS/BiCMOS
MEMS Integration BiCMOS + Microviscosimeter (Minimal invasive blood
sugar sensor ):Electronics + wireless communication + sensor
functionCantilever 25. RFMEMS Switches in BiCMOS Main application
areas: Multiband circuits and 60-70 GHz applications Reliability is
the main concern
