IGBT module Application for High Power Density Design ...image.cntronics.com/imgupload/110824113955b40gawj2rxmf.pdf · Author: zhaoz Created Date: 8/1/2011 1:00:04 PM

IGBT Module Application for HighPower Density Design

- 2011/08

Page 2Copyright © Infineon Technologies 2006. All rights reserved.

Table of contents

High power density & IGBT module development

IGBT safe operational area & the design principle

Reliability requirement & estimation

High power density on CAV and wind power application


Higher Power Density – Power Converter

Today’s Solution Present’s Solution

Easy2B51mmx48mm

Econo245mmx107.5mm

≈50%


High power density – Wind converter

Without OV load - > Continuous current: 2248A -> 2.7MVA(2.3MW) -> Power density=9.5MW/m3

OL=110% per 1min - > Continuous current : 2044 A -> 2.4MVA(2MW) -> Power density=8.3MW/m3

OL=150% per 1min -> Continuous current: 1499A -> 1.8MVA(1.5MW) -> Power density=6.25MW/m3

fs=2.5kHzRth = 0.002 K/WFlow rate = 15 L/minPressure drop = 0.2 bar

W: 596 mmH: 365mmL: 1090mmIGBT4 FF1000R17IE4

Volume:0.24m3


High power density – Power Converter

2LS2000R17IE4-2W-IN: 2xPP3 FF1000R17IE4 Io=1543 Arms 690 Vrms 1 phase of a 1.3 MVA inverter length 400mm x width 200mm

height 117mm


High power density – PrimeSTACK

RMS Io=234A, fs=3kHz, fo=50Hz, L=280mm,W＝216mm, H=75mm Air forcedAir flow: Min. 485m3/h,Pressure drop: 410pa (Typ.)Airinlet: -25oC~40oC

FF300R12KE3 Estimated heatsink Rthha =0.02114K/WRthha per module=0.0634K/W

Power:120kW

5.29MW/m3

0.0227m3


Power density

Equipment Power Density = Pout (W) / Volume (cc)

Weight/power

Pow

er

density

(kW

/m3)

Weig

ht/p

ow

er

(kg/k

w)

1&2 GTO 1&2 IGBT

50%

Increased power density Less weight Higher efficiency A simple converter structure

IGBT4 (high Tvjop): 130W/in3 -> 7.9MW/m3 W/P=118kg/1.5MW

=0.078kg/kW


IGBT - High power density

Power density

IGBT modulechip/package

Coolingthermal design

Constructionlayout/

optimization

Driving approachswitching/gate

driving

Sub – system(Topology, Application etc)


Chip technology development

IGBT1/2 PT/NPT – > IGBT3 Trench Field Stop ->IGBT 4 -> IGBT5?


1 2 3 4 5

tota

lsw

itchin

glo

sses

Saturation voltage VCEsat [V]

IGBT2 – KS4

IGBT2 – DN2

IGBT2 – DLCIGBT3 – E3

IGBT3 – T3

1200V IGBT Chip generation Trade-Off

E4 - IGBT4 Medium Power

P4 - IGBT4 High Power

T4 - IGBT4 Low Power

Typical values @ Tvj=125°C

-20% Eoff

E4

P4

IGBT4 High Power: improved softnessIGBT4 Medium Power: lower switching losses than E3 with the same softnessIGBT4 Low Power: lower switching losses than T3 with the same switching characteristic

-15% Eoff

T4

The information given in this presentation is given as a hint for the implementation of the Infineon Technologies components only and shall not be regarded as any description of warranty of a certainfunctionality, conditions or quality of the Infineon Technologies components. The statements contained in this communication, including any recommendation or suggestion or methodology, are to beverified by the user before implementation, as operating conditions and environmental factors may differ. The recipient of this presentation must verify any function described herein in the realapplication. Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind (including without limitation warranties of non-infringement of intellectual property rights of anythird party) with respect to any and all information given in this presentation.


IGBT chip development trendpast/present /future

1

1.5

2

2.5

3

3.5

4

1988 1992 1996 2000 2004 2008 2012

VC

Esat(

125°C

)[V

]@

75A

1st Gen

2nd Gen 3rd Gen 4th Gen 5th Gen

A/A0 = 1 A/A0 =65

A/A0 = 0,44A/A0 = 0,39

A/A0 = 0,31

1200 V / 75 A IGBT

Nennschaltleistung: 100 kW

Kurzschlußleistung: 500 kW

Optimized trade-off behavior between conduction and switching losses

Increase of operational junction temperature by 25K

Reduction of chip area

125°C

150°C175°C


Package Shrinking

(e.g, 50A/1200V)

Econo3Econo2

36% smaller size


Package Shrinking

(e.g, 25A/1200V)

Econo2 Easy2

57.8% smaller size


Package Shrinking

FS150R12KT4

SixPACK

FS100R12PT4FS150R12PT4FS200R12PT4

EconoPACK4 Econo3


New novel package - EconoPACK4

PressFITauxiliary terminals

injection moldedterminals

snap-on lid

injection moldedinlays

creepageenlargement

design

snap-in nuts


New novel package - EconoPACK4

Module bus bar concept for the powerterminals

Low inductancemodule design

Ultrasonicwelding

connection


Package Current Extension – Econo3

SixPACKFS150R12KT4FS100R12KT3

62mmx 122mmx 17mm


Package Current Extension - EconoDUAL3

1200V/600A1700V/600A

1200V/450A1700V/450A

62mmx 122mmx 17mm

Half bridge


Optimized layout and bond terminal - EconoDUAL3


Package Current Extension - PrimePACK3

FF1400R17IP41400A / 1700V

FF1000R17IE41000A / 1700V

1400A/IP4

Vcesat =2.1V @Tvj=125oC2.2V @Tvj=150oC

(Eon+Eoff) /Inom =0.804mJ/A Rthjc=0.0155K/W

1000A/IE4

Vcesat =2.35V @Tvj=125oC2.45V @Tvj=150oC

(Eon+Eoff)/Inom=0.681mJ/A Rthjc=0.024K/W


Table of contents






Higher Power Density- Best Price-Performance Ratio

Higher PowerDensity

Optimizedthermaldesign

Higher ∆ T

ripple(higher heatsink

Temp.)

Lower losses

+

Measures Tj 175°CNew chipIGBT and

diode tech.

Focus

Steps

Target

System Chips,Drivers

Package


Low Losses vs. Robustness Saturation Voltage

Conduction Losses

Vcesat*Ic

Turn-on/off

Switching Losses

(Eon+Eoff)*f

Device Robustness

Short Circuit


Performance vs. Price

Positive thermal property

Easy to parallel

Soft switching

Low switching stressLow EMI

Small chip size, big wafer

high Rthjc & low cost

Max. junction temp.

175℃

Low losses High robustness Easy to parallel Soft switching High Tj Cost


• IGBT Safe Operation Area

•Thermal Limit

•Mechanical Requirement

•Reliability Requirement

IGBT selection for high power density


1. IGBT Safe Operation Area

Turn On Turn Off

• IGBT/Diode Voltage Rating and current rating

• IGBT RBSOA

• Diode SOA

• IGBT Short Circuit Protection


2. Thermal Limit – Junction Temperature


2. Thermal Limit – Pulse Power

ΔTj ΔTj

Fundamental frequency: 50HzTemperature swing in the IGBTTemperature swing in the diode

Fundamental frequency: 1HzTemperature swing in the IGBTTemperature swing in the diode

Thermal Impedance


Material Group of EconoDUAL™3package withCTI > 200 Material group IIIa

Material Group / Isolierstoffklasse

Material group I: 600 ≤ CTI

Material group II: 400 ≤ CTI ≤ 600

Material group IIIa: 175 ≤ CTI < 400

Material group IIIb: 100 ≤ CTI ≤ 175

CTIUL

(PLC) IEC

600 < CTI 0 I

400 ≤ CTI < 600 1 II

250 ≤ CTI < 400 2IIIa

175 ≤ CTI < 250 3

100 ≤ CTI < 175 4 IIIb

0 < CTI < 100 5 -

e.g. EconoDUAL™3 housing material group

3. Package Requirements - insulation


3. Package Requirements – busbar design

Driver/Boosterboard

AC-terminal Low inductive 2- or3-layer busbar

HeatsinkDC link capacitors, mountedclose to the module


× ×

×

4. Reliability Requirements

• Power Cycling

• Thermal Cycling

• Cosmic Radiation


IGBT Safe Operation – IGBT RBSOA

Pulse current (ICRM IRBSOA)

ICRM is defined as repetitive turn on pulse current, related to IGBT thermal

IRBSOA is defined as maximum turn off current

ICRM

IRBSOA

1ms is just test condition, real pulse width is depend on thermal

VCEIC VGE

ICRM may be exceeded during turn on due to reverse recovery.


DC linkvoltage

IGBT Safe Operation – IGBT RBSOA

Blocking voltage (VCES)

VCES can not be violated at any condition, otherwise IGBT wouldbreak though

VCES specified at Tj=25℃. Higher Tj, higher blocking voltage

Due to stray inductance inside module

Chip level

Module level

VCES is easiest to be exceed duringturn off, due to external and internalstray inductance

LdtdiV */


IGBT Safe Operation - RBSOA

For 3rd and 4th IGBT, Rgoff has little impact on Eoff, dv/dt, and di/dt di/dt is only controllable if the gate voltage doesn’t drop below the Miller Plateau

level before IC starts to decrease dv/dt and di/dt are controllable by the gate resistor when Rgoff is very large A larger resistor will result in a smaller dv/dt and di/dt


IGBT Safe Operation – Diode SOA

Blocking voltage (VRRM)

Pulse current (ICRM)

Similar definition of VCES at Tj25℃

Similar definition of ICRM , two time of IF.


IGBT Safe Operation – Diode SOA

Diode SOA

0

0,5

1

1,5

2

2,5

0 1000 2000 3000

VR [V]

2000

1000

0

1000

2000

3000

time [400ns/div]

VR

[50

0V

/div

]IR

[50

0A

/div

]

1

23

!

0

0 1000 2000 30000

1000

2000

VR(t) [V]

IR(t

)[A

]locus iR(t)*vR(t)

1

2

3

!

0

High voltage module specify the SOA of diode. Not onlypeak current and voltage is limited, peak power also isrestricted.The instantaneous peak power should never exceed thelimit for the max. power given in the SOA diagram.

More severe with small current at lowtemperature due to snap off and oscillation


IGBT Safe Operation - Diode SOA

Erec, Irr, dv/dt, and di/dt will be decreased with increasing Rg Erec, Irr, dv/dt, and di/dt will be decreased with increasing Cg Higher Tj lead to decreased dv/dt and di/dt Diode tends to snap off with small current

No Cge, t/div=1us

Ron=Roff=1.8 Ω

Ic= 1/10 Inom

No Cge, t/div=1us

Ron=Roff=1.8 Ω

Ic= Inom

T

T

1 >

2 >

1) Ch 1: 2 Volt 250 ns

2) Ch 2: 5 Volt 250 ns

Soft recovery behavior


IGBT Safe Operation – short circuit

SC1: Short before Switch On SC2: Short after Switch On

Short circuit current (ISC)

The short circuit current value is a typical value. In applications, SC1and SC2 can only be safely turned off when desaturated, the short

circuit time should not exceed 10us.

VCE

IC

VGE

VCE

IC

VGE


IGBT Safe Operation – short circuit

Short circuit condition: VGE: gate voltage (15V)

VCC: DC bus voltage

Tvj: short circuit start temperature

It is important to clamp gate voltage during short circuit

VGE

ISC

tSC


IGBT Safe Operation – Vge limit

Gate-emitter voltage (Vge)

Gate Clamping: Limitation of increase of gate voltage due to positive feedback over CGC

An issue with long durations regarding gate oxide break down Limitation of short circuit currents

Methode 1Gate-Supply Clamping

Methode 2Gate-Emitter Clamping


RBSOA – Vdc availabilityFF1400R17IP4 FF1000R17IE4

Module stray inductance : L=10nH.ΔV=100V -> di/dt=10A/ns -> P4 tf=0.28us, E4 tf=0.2us

71.4V

100V


Output current

Liquid

Air forced

Rthha per module=0.015k/W-> Max.Io=800ARthha per module=0.006k/W-> Max. Io=1150A

About 44%


PrimePACK & IHM

FF1000R17IE4 FF1200R17KE3_B2 FF1200R17KP4_B2

Vcesat @1000A= 2.35V @Tvj=125oC= 2.45V @Tvj=150oC (Eon+Eoff)/Inom=0.681mJ/A

Vcesat @1200A= 2.4V @Tvj=125oC

(Eon+Eoff)/Inom=0.6625mJ/A

Vcesat @1200A= 2.3V @Tvj=125oC

(Eon+Eoff)/Inom=0.6625mJ/A


RBSOA

FF1000R17IE4 FF1200R17KE3_B2 FF1200R17KP4_B2

Module stray inductance: 20nHVp=1562V (E3), Vp=1599V (P4)

Module strayinductance: 10nH

Vp=1645V


Output current – PP3 vs. IHM

Liquid

Air forced

PP3 Rthha per module=0.006k/W-> Max.Io=1150APP3 Rthha per module=0.024k/W- > Max. Io=610AIHM Rthha per module=0.008k/W-> Max. Io=800A


Cooling – thermal design

Module with Baseplate area: 150mm*150mm

Rth on different heatsinks. Power loss at different Tvjop.

Rthsa by increasing heatsink size is compensated to a largeextend by spread resistance Rc by lateral heat conduction. Increase power dissipation by increasing heatsinktemperature, also IGBT4 with high Tvjop=150oC ensures to bepossible of high power density at same cooling condition.


Cooling - Air forced vs. heatpipe

Max. Ts=104.3oC- > Rthha =0.02K/W

Max. Ts=96.3oC-> Rthha = 0.0173K/W

Homogeneous heat spread

1.5MW DF,Max. Power losses=3.35kW (OL & margin)


Cooling – Heatpipe vs. Liquid

Max. Ts=93.8oC- > Rthha =0.018K/W

Max. Ts=65oC-> Rthha = 0.012K/W


Table of contents






Wear-out failures

Other failures (climatic stresses,chemical stresses)

End of Life: bond wire connections

End of Life: solder connections

Destruction of housing / terminals


Bond wire connections

Degradation ofbond wire

connections:

Main influences

Application

No. of load cycles

Temperature delta of load cycles

Absolute temperature

Design & Manufacturing

Bond wire material

Bond wire loops

Chip metallization

Quality of the bond wire connection

The most important Test focussing on Wire Bond Connectionsis Power Cycling


Bond Wire Connection

Bond-wire lift-off (left)and reconstruction of Al

metallization (right)

Bond-wire heel cracks


Power Cycling

TChip

TDCB

TBaseplat

e

TCoole

r

Means driving the chip/bond wire system at two different junction temperatures.

Test Points (e.g.)Tj = 50K: TJ1 = 75C, TJ2 = 125C

Failure Criteria:An Increased Saturation Voltage of 5%


Delamination

Delamination:

Main influences

Design & Manufacturing

Dimension of the components close to thesolder layers

Heat expansion coefficient and elasticityof the used materials

Composition of the solder

Thickness of the solder layers

Application

No. of load cycles

Temperature delta of the load cycles

Absolute temperature

Temperature gradient of the load cycles

The main important Tests focussing on Solder Connections arePower Cycling, Thermal Cycling and Thermal Shock Test


Base plate and DCB material selection

Coefficient of thermal expansion (CTE)[ppm/K]

Thermal ShockTest Results


Failure mechanism during TC1)

200 Cycles 1000 Cycles 2000 Cycles 4000 Cycles

20000 Cycles

Cu Base Plate

AlSiC Base Plate

1) tCycle = 5min, TCase = 80K


Thermal Cycling


Cycle time:Ton + Toff typ. 5min

Temperature level:Tcmin=25°CTcmax=100°C

Failure criteria:20% Rth increase

Confidence level:95%

Thermal cycling of traction modules independency of the temperature

1.000

10.000

100.000

1.000.000

10.000.000

100.000.000

10 100delta Tc in K

no

.of

cy

cle

s

Tcmax=100°C

Tcmin=25°C

- - - estimated curve


Reliability Test


Outgoing Quality-100% Final Test of IGBTModule


Table of contents






Wind power

Direct DriveDouble feed

IHM PrimePackTM EconoDualTM3 EconoPackTM+


Mega–watt wind converter

Humidity, saltyHigh altitudeBare, remote

- Lifetime (PC/TC)- Reliability

- Maintenance - High power density- Compact- Flexible

- Cost-to-performance


Requirement on wind converter

High switching frequency in grid side -> Low IGBT4 SW, even SiC High reliability and robustness - > IGBT4 modules Long expectation lifetime -> IGBT4 with high PC/TC, even next Easy to maintain -> phase module or modular power unit

Grid side

AC inductor,magnetic loop Inductor

Motor side


Characteristic and influence of high altitude

rare air and low air pressure at high altitude。 rare air wind flux decrease Low air pressure shoot through voltage of clearance

decrease

Higher FIT in high altitude due to increasing universe radialparticle


Module clearance distance for high power solar

EconoDUAL3clearance distancebtw terminals is

10mm.

PrimePACKclearance distancebtw terminals is

19mm.


IEC60664

According to Table F.1,270V OV Class:IV ->6KV impulse

Withstand voltage required

The severest condition:Pollutiondegree3, inhomogenous field,

Min.clearance distance of 5.5mm isrequired at 2000m altitude.


Correction factor from IEC60664

4000m -> Factor: 1.29 ->Min. 7.1mm

6000m -> Factor: 1.70 ->Min. 9.35mm

The min. clearance distance of 9.35mm at high altitude of 6km is required.Therefore, the clearance of PrimePACK and EconoDUAL3 can meet the

requirement of high altitude application.


IGBT modules ->Double Feed Wind System

WindPower

IGBT Module Rotor side Paralleling/ per arm

Grid side Paralleling/Per arm

Cooling

1.25MW EconoDUAL3 FF450R17ME4 2pcs FF450R17ME4FS450R17ME4

NN

Water

PrimePACK2/3 FF1000R17IE4 N FF650R17IE4 N Water

1.5MW EconoDUAL3 FF450R17ME4 3pcs FF450R17ME4 3pcs Water

PrimePACK2/3 FF1000R17IE4 2pcs FF650R17IE4 2pcs Air-forced

IHM BIHM A

FZ1600R17HP4FZ1600R17KE3

N FZ1600R17HP4FZ1600R17KE3

N Air-forced

2.0MW PrimePACK3 FF1000R17IE4 3pcs2pcs

FF1000R17IE4 2pcs2pcs

Air-forcedWater

IHM B FZ2400R17HP4 N FZ1600R17HP4 N Air-forced

EconoDUAL3 FF450R17ME4 4pcs FF450R17ME4 4pcs Water

*Remark:1) The proposal is based on the simulation conditions below as well as the general case experiences.

Vdc=1100V, Vin=690V, fo=0~15Hz, fs=2kHz @ rotor side, fo=50Hz, fs=3kHz @ grid side, OL=120%.2) The usage of the different IGBT solutions are mostly influenced by the real cooling system. Therefore, the

disclaimer rule should be complied.


IGBT modules ->Full Power Wind System

WindPower

IGBT Module Rotor side Paralleling/per arm

Grid side Paralleling/Per arm

Cooling

1.5MW PrimePACK3 FF1000R17IE4 3pcs FF1000R17IE4 3pcs Water

IHM A FF1200R17KE3 2pcs FF1200R17KE3 2pcs Water

2.0MW PrimePACK3 FF1000R17IE4 3pcs FF1000R17IE4 3pcs Water

IHM B FZ2400R17HP4_B29

2pcs FZ2400R17HP4_B29

2pcs Water


CAV segmentsand the market we especially look at…

City bus

Refuse truck

Commercial

Loader

Bulldozer Excavator

Dump truck

Construction

Focus on propulsion andauxiliaries…

Harvester

Agriculture

Tractor

LCV

ForkliftTransport


CAV products porfilio


Why design a CAV module with a baseplate?

heatsink heatsink

baseplate

DCB

Geometry with baseplate Geometry without baseplate

Regardless of technology, every isolated power module must meet the workingconditions determined by load cycle and the thermal flow from junction to ambient.Thus, the key calculations to make are the junction and case temperature swingsduring a load cycle. These temperature cycles can than be compared to publishedreliability data.An FEM simulation has been used to calculate the thermal impedance for twomodules.

Silicon, DCB and cold plate as well as cooling conditions (defined as heat transfer of1kW/m2K for both systems) are the same for both modules.TA (meaning coolant temperature) is 60°C.


Why design a CAV module with a baseplate?The thermal stack up

soldercopper

Al2O3

75µm of thermal grease l=1 W/mK

10mm aluminum heatsink

soldercopper

silicon die

copper baseplate

Al2O3

silicon diesolder

copper

copper75µm of thermal grease l=1 W/mK

10mm aluminum heatsink

Geometry with baseplate

Geometry without baseplate

Active area 2

Active area 1

PIGBT=145W

PIGBT=100W

Active area 2

Active area 1

Baseplate enlarges active area of heat flowfrom module to heatsink. For the sameTJ=125°C the module with a baseplate candissipate 45% more power. This results ineither more available inverter power orreduced junction temperatures.


Why design a CAV module with a baseplate?Typical load profile (simulations)

High dynamic load cycles are shorterthan 5s

IGBT loses as result of applied load cycle

0

50

100

150

200

0 5 10 15 20 25 30

Time [s]

Lo

ss

es

[W]

P_IGBT

1

2

3

4 5

1

Source: Infineon SystemEngineering

IGBT losses as a result of applied load cycles


Why design a CAV module with a baseplate?Typical load profile – influence on lifetime (simulations)

with Base...without B...

0 30.005.00 10.00 15.00 20.00 25.00

60.00

80.00

65.00

70.00

75.00

t [s]

T [°C]

with BPwithout ...

0 30.005.00 10.00 15.00 20.00 25.00

50.0

110.0

62.5

75.0

87.5

100.0

Tj [°C]

t [s]

withbaseplate

withoutbaseplate

IGBT Junction Temperature Solder and case temperature

withbaseplate

withoutbaseplate

∆T=19°C∆T=8°C

Benefits of a module with baseplate vs. module w/o a baseplate for a givenapplication:-reduced junction temperature by 19°C results in an extra 19e6 power cycles-reduced case temperature by 8°C results in available TC of >> 500 000 cyclesResult: longer lifetimes or same lifetime with a lower current rated moduleand /or increased inverter ratings.


Reliability of IGBT modulesPower Cycling – the curve

Number of cycles is dependent on the maximum temperature and the temperature swing. Forexample:IGBT4 1 700kc @Tvjmax=150°C, ∆T=40°C (110°C – 150°C)IGBT4 300kc @Tvjmax=150°C, ∆T=60°C (90°C – 150°C)

1 700k

300k


Active thermal cycling:12.000 cycles @T=80°C are standard


EconoDUAL™3 for highest thermal loads -more thermal cycling capability is possible

Standard EconoDUAL™3after 10.000 cycles (T=80°C)

„CAV“ EconoDUAL™3 test deviceafter 10.000 cycles (T=80°C)

clear delamination, below chip

EoL: 5.000 (guaranteed)

minimal delamination

EoL >> 10.000 cycles

substrate soldering layer substrate soldering layer

chip soldering layer chip soldering layer


EconoDUAL™3 CAV Vibration Test

Acceleration [g] Frequency [Hz] Test duration [h] each direction

15 swept sine f = 47-2000 Hzwith 1Oct./min

t = 8h each direction

50 shock Endurance time 8 ms 6 times each direction

15 random f = 47Hz …2kHz t = 8h each direction

EconoDUAL™3: Test performed, result will be shared.

Bus Bar Sample SpecificationMaterial: CopperThickness: 2mmWidth: 14mmLength: 70mm

Infineon –Never stop thinking

Documents

IGBT module Application for High Power Density Design ...image.cntronics.com/imgupload/110824113955b40gawj2rxmf.pdf · Author: zhaoz Created Date: 8/1/2011 1:00:04 PM