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IEDM 2009 Baltimore MD December 7-9, 2009 Conference Report Dirk Wouters IEDM 2009 Conference Report - D.Wouters, IMEC - WIND project distribution 1

IEDM 2009 Baltimore MD December 7-9, 2009

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IEDM 2009 Baltimore MD December 7-9, 2009. Conference Report Dirk Wouters. General comments. With over 30 high quality selected papers on memory, IEDM remains one of the top conferences on (Non-Volatile) Memory 6 Sessions do explicitely mention “memory” in their title - PowerPoint PPT Presentation

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Page 1: IEDM 2009 Baltimore MD December 7-9, 2009

IEDM 2009Baltimore MD

December 7-9, 2009 Conference Report

Dirk Wouters

IEDM 2009 Conference Report - D.Wouters, IMEC - WIND project distribution 1

Page 2: IEDM 2009 Baltimore MD December 7-9, 2009

General comments

• With over 30 high quality selected papers on memory, IEDM remains one of the top conferences on (Non-Volatile) Memory

• 6 Sessions do explicitely mention “memory” in their title

• Topics cover different types of NVM, with number of papers reflecting their importance (Flash > PCM > RRAM > MRAM > FRAM)

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Page 3: IEDM 2009 Baltimore MD December 7-9, 2009

Memory sessions 6 (out of 38)

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Page 4: IEDM 2009 Baltimore MD December 7-9, 2009

Memory papers : #31

• Flash : 14 (most on Charge Trap concepts)• PCM: 7 (3 from Numonyx, highlight on 1Gb 45nm

PCM prototype)• RRAM: 5 (4 on metaloxide RRAM, 1 on CBRAM

electrolytic type)• MRAM: 2 (focus on STT MRAM)• FERAM: 1• Other: 2• TOTAL: 31

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Page 5: IEDM 2009 Baltimore MD December 7-9, 2009

General/Invited• 27.7 Future directions of NVM in compute applications

(A.Fazio, intel)

Indicated memory market growth opportunities in a new market segment. Compute memory is an opportunity for NAND, with SSD replacing HDD. New (RRAM) memory technologies may even offer better (DRAM-like) performance (so called storage class memory) so that NVM may cover even more positions upfront in the memory hierarchy, but cost and scaling are still open issues!

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Page 6: IEDM 2009 Baltimore MD December 7-9, 2009

Flash papers #14

• CT ~9• FG• 3D~3

A lot of papers on Flash, especially on Charge Trap Flash that is seen as possible scaling solution, either in 2D or in 3D (BICS) approach

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Page 7: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on Flash memories/1

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Page 8: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on Flash memories/2

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Page 9: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on Flash memories/3

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Papers on Flash memories/4

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Page 11: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on Flash memories/5

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Page 12: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on PCM : #7

• Highlights:

– 45nm 1Gb demonstrator by Numonyx– Use of new type selector (OTS) for Xbar memory

architecture (Intel)

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Page 13: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on PCM /1

Numonyx

Numonyx

Numonyx

Samsung

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Page 14: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on PCM /2

intel

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Page 15: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on PCM /3

Numonyx

IBM

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Transistor switching

NTUS-Singapore

• Interesting link HK MOSFET learning to RRAM

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Page 17: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on RRAM : #5

• Highlights:

– Further progress of HfO RRAM (ITRI group) makes this very interesting candidate for OxRRAM

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Page 18: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on RRAM /1

GIST-Korea

ITRI-Taiwan

TSMC-Taiwan

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Page 19: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on RRAM /2

NEC

NEC

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Page 20: IEDM 2009 Baltimore MD December 7-9, 2009

Papers on MRAM : #2

• Highlights:

– STT MRAM keeps triggering interest from companies (Macronix, Intel)

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Page 21: IEDM 2009 Baltimore MD December 7-9, 2009

MRAM :

TSMC

Intel

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Papers on FRAM : #1

• Actually only university interest is continuing on FeRAM...looks far from real application

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Page 23: IEDM 2009 Baltimore MD December 7-9, 2009

FeRAM :

Univ of Tokyo

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