HighFrequencyDevices

HIGH FREQUENCY DEVICES

The Best Solution for Realizing the Information andCommunication EraCommunication networks, such as high speed Internet, and high-speed data communication,are developing rapidly. We are ready to offer the best solution to the systems for realizingthe infomation and communication era by providing of the GaN/GaAs products.

Plastic Mold Package (GD-32)

4-pin Mold Package (GD-30)

SELECTION MAP

Application

� GaAs HEMT SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS (Discrete)

�: AEC-Q101 qualified FET: Field Effect Transistor HEMT: High Electron Mobility Transistor HBT: Heterojunction Bipolar Transistor

No

ise

Fig

ure

NF

[d

B]

General Use

2.4GHz 4GHz 12GHz 24GHz20GHz

1.2

0.2

0.4

0.6

0.8

1.0

G ain G ain

MGF4921AM�

MGF4921AM�

MGF4934CMMGF4964BL

MGF4965BM

MGF4935AM

MGF4941CL�

MGF4937AM MGF4941AL

� GaAs HEMT/MES FET, InGaP HBT SERIES FOR SMALL SIGNAL AMPLIFIERS (Discrete)

�: AEC-Q101 qualified

�: New Product ��: Under Development Partially supported by Japan's New Energy and Industrial Technology Development Organization(NEDO).

� Radio Link System � Satellite Communication

Application � Satellite Broadcasting � Communication Receiver

Ou

tpu

t P

ow

er

[dB

m]

10

14

18

~L/S/C Band (~8GHz) ~X/Ku Band (~14.5GHz) Ka Band (24GHz)

MGF3022AM�

MGF4841AL

MGF1941AL

General Use

� GaN HEMT SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS

MGF4841CL�

Application � Ku- SATCOM � Ka- SATCOM�3.5GHz Band Mobile Communication

50

40

Ou

tpu

t P

ow

er

[dB

m]

MGFG5H1503

MGFK50G3745��

MGFS39G38L2

MGFS38G38L2��

MGFS37G28L2��

3.5GHz Band Ka Band (27.5~31GHz)Ku Band (13.75~14.5GHz)

For Mobile Communication Base Transceiver Station For Satellite Communication (Internally Matched)

MGFK49G3745

MGFK48G3745�

MGFK47G3745A

MGFG5H3001�

� GaAs HEMT SERIES FOR MICROWAVE-BANDLOW-NOISE AMPLIFIERS (Discrete)

� GaAs HEMT/MES FET, InGaP HBT SERIES FORSMALL SIGNAL AMPLIFIERS (Discrete)

� GaN HEMT SERIES FOR SATELLITE COMMUNICATION (Internally Matched)

� GaN HEMT SERIES FOR MOBILE COMMUNICATION BASE TRANSCEIVER STATION

TYPE NAME DEFINITION OF HIGH FREQUENCY DEVICES

RoHS: Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment

High Frequenc y devices are compliant with the RoHS (2011/65/ EU).

� Discrete

MGF 49 41 A LA B C D

A Device Structure

B Chip TypeC Series NumberD Auxiliary Symbol

1x :MES FET (Small Signal)3x :HBT4x :HEMT

� For Satellite Communication (Internally Matched)

MGF K 50 G 3745A B C D

A Freq. BandB Output Power in dBmC Device StructureD Freq. Band in GHz

Kuex.50=50dBm=100W(typ.)G:GaN HEMTex.3745=13.75~14.5GHz

A Freq. BandB Output Power in dBmC Device StructureD Freq. Band in GHzE PackageF Input / Output Pair

Sex.39=39dBmG:GaN HEMTex.38=~3.8GHzL:QFNex.2=Input / Output 2 Pairs

� For Mobile Communication Base Transceiver Station

PRODUCT LIST

MGF S 39 G 38 L 2A B C FD E

MGF4941CL �

MGF4965BMMGF4964BLMGF4941ALMGF4937AMMGF4935AMMGF4934CMMGF4921AM�

2.40

0.95

0.65

0.35

0.35

0.45

0.50

0.35

3.80

1.25

0.90

0.50

0.50

0.65

0.75

0.55

7.5

9.5

11.5

12.0

11.5

11.0

11.5

11.5

10.0

11.5

13.5

13.5

13.0

12.0

13.0

13.0

24

20

20

12

12

12

12

4

1.5

2

2

2

2

2

2

2

Idss

10

10

10

10

10

10

10

GD-32

GD-30

GD-32

GD-32

GD-30

GD-30

GD-30

GD-30

Type NumberNoise Figure [dB] Associated Gain [dB]

Typ. Max. Min. Typ.

Frequency[GHz]

Drain-Source Voltage [V]

Drain Current[mA]

PackageOutline

MGF3022AM �

MGF4841CL �

MGF4841ALMGF1941AL

14.0

–

11.5

11.0

16.5

11.5

14.5

15.0 –

18.0

8.5

12.0

10.0 – – –

2.4

24

12

12

3

1.5

2.5

3

0.033

Idss

0.025

0.03 – –

– – – – – –

– – – – – –

– – – – – – GD-30

GD-32

GD-32

GD-32

Type NumberMin. Typ. Min. Typ.

PowerAdded

Efficiency[%]

Frequency[GHz]

Drain-Source Voltage

[V]

DrainCurrent

[A]

PackageOutline

Output Power at 1dBGain Compression

[dBm]

Typ. Max.

ThermalResistance

[°C/W]

OutputPower[dBm]

LinearPowerGain[dB]

3rd Order IMDistortion

[dBc]

Ta=25°C �: AEC-Q101 qualified

Ta=25°C �: AEC-Q101 qualified

Ta=25°C �: New Product ��: Under Development

Type NumberPowerAdded

Efficiency[%]

Frequency[GHz]

Drain-Source Voltage

[V]

PackageOutline

Typ. Max.

ThermalResistance

[°C/W]

OutputPower[dBm]

LinearPowerGain[dB]

MGFS37G38L2��

MGFS38G38L2��

MGFS39G38L2

37

38

39

20

20

20

67

67

67

3.4~3.8

3.4~3.8

3.4~3.8 50

50

50 13.5

11.7

10.2

–

–

–

GF-67

GF-67

GF-67

Ta=25°C ��: Under Development

GD-30 GD-32

GD-30 GD-32

GF-67

GF-38 GF-65GF-8 GF-71

Type NumberMin. Typ.

PowerAdded

Efficiency[%]

Frequency[GHz]

Drain-Source Voltage

[V]

DrainCurrent

[A]

PackageOutline

Typ. Max.

ThermalResistance

[°C/W]

OutputPower[dBm]

LinearPowerGain[dB]

3rd Order IMDistortion

[dBc]

MGFG5H1503 43 20 -25 – 18 13.75~14.5

27.5~31

24 2.7 1.51.2 GF-65

39 15 -25 – 12 24 1.5 T.B.D.2.0 GF-71MGFG5H3001�

MGFK49G3745 49 7.5 -25 – 28 13.75~14.5 24 2.1 0.60.4 GF-38

MGFK50G3745�� 50 10 -25 – 30 13.75~14.5 24 2.4 T.B.D.T.B.D. GF-38

MGFK47G3745A 47 9 -25 – 30 13.75~14.5 24 1.05 1.41.1 GF-8

1.00.8MGFK48G3745� 48.3 9.3 -25 – 33 13.75~14.5 24 1.44 GF-8

HIGH FREQUENCY DEVICES

www.MitsubishiElectric.comPlease visit our website for further details.

H-CX587-W KI-1709 Printed in Japan (TOT) ©2017 Mitsubishi Electric Corporation

New publication effective Sep. 2017.Specifications subject to change without notice.

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Attention! This overview only presents a selection of our product portfolio.With some manufacturers we may have special regulations and / or restrictions for some European countries.

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