SS3P4www.vishay.com Vishay General Semiconductor

Revision: 08-Oct-13 1 Document Number: 88954

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.comTHIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Current Density Surface Mount Schottky RectifiersFEATURES• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONSFor use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.

MECHANICAL DATACase: DO-220AA (SMP)Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial gradeBase P/NHM3 - halogen-free, RoHS-compliant, and automotive grade

Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

PRIMARY CHARACTERISTICSIF(AV) 3.0 A

VRRM 40 V

IFSM 50 A

EAS 11.25 mJ

VF 0.50 V

TJ max. 150 °C

Package DO-220AA

Diode variations Single

DO-220AA (SMP)

eSMP

® Series

Available

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)PARAMETER SYMBOL SS3P4 UNIT

Device marking code 34

Maximum repetitive peak reverse voltage VRRM 40 V

Maximum average forward rectified current (fig. 1) IF(AV) 3.0 A

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A

Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH EAS 11.25 mJ

Voltage rate of change (rated VR) dV/dt 10 000 V/μs

Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

SS3P4www.vishay.com Vishay General Semiconductor

Revision: 08-Oct-13 2 Document Number: 88954

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.comTHIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms

Note(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 15 mm x 15 mm copper pad areas. RJL is measured

at the terminal of cathode band. RJC is measured at the top center of the body

Note(1) Automotive grade

RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT

Maximum instantaneous forward voltage IF = 3 ATJ = 25 °C

VF (1)0.55 0.60

V TJ = 125 °C 0.50 0.55

Maximum reverse current at rated VRTJ = 25 °C

IR (2)- 150 μA

TJ = 125 °C 7.5 15 mA

Typical junction capacitance 4.0 V, 1 MHz CJ 130 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)PARAMETER SYMBOL SS3P4 UNIT

Typical thermal resistance (1)

RJA (1) 85

°C/W RJL (1) 15

RJC (1) 20

ORDERING INFORMATION (Example)PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

SS3P4-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel

SS3P4-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel

SS3P4HM3/84A (1) 0.024 84A 3000 7" diameter plastic tape and reel

SS3P4HM3/85A (1) 0.024 85A 10 000 13" diameter plastic tape and reel

3.0

2.5

2.0

1.5

1.0

0.5

080 90 100 110 120 130 140 150

Lead Temperature (°C)

TL Measuredat the Cathode Band Terminal

Ave

rage

For

war

d R

ectif

ied

Cur

rent

(A

)

50

40

30

20

10

01 10 100

Number of Cycles at 50 Hz

Pea

k F

orw

ard

Sur

ge C

urre

nt (

A)

SS3P4www.vishay.com Vishay General Semiconductor

Revision: 08-Oct-13 3 Document Number: 88954

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.comTHIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.1 0.3 0.5 0.7 0.9 1.1 1.30.1

10

1

100

Instantaneous Forward Voltage (V)

Inst

anta

neou

s F

orw

ard

Cur

rent

(A

)

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

10 20 30 40 50 60 70 80 90 100

100 000

10 000

1000

100

10

1

0.1

Percent of Rated Peak Reverse Voltage (%)

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

Inst

anta

neou

s R

ever

se L

eaka

geC

urre

nt (

µA)

0.1 1 10 100

1000

100

10

Reverse Voltage (V)

Junc

tion

Cap

acita

nce

(pF

)

0.01 0.1 1 10 100

1000

100

10

1

t - Pulse Duration (s)

Tran

sien

t The

rmal

Impe

danc

e (°

C/W

)

DO-220AA (SMP)

Cathode Band

0.086 (2.18)0.074 (1.88)

0.142 (3.61)0.126 (3.19)

0.158 (4.00)0.146 (3.70)

0.013 (0.35)0.004 (0.10)

0.012 (0.30)0.000 (0.00)

0.018 (0.45)0.006 (0.15)

0.045 (1.15)0.033 (0.85)

0.036 (0.91)0.024 (0.61)

0.032 (0.80)0.016 (0.40)

0.103 (2.60)0.087 (2.20)

0.053 (1.35)0.041 (1.05)

0.012 (0.30) REF.

0.100(2.54)

0.105(2.67)

0.025(0.635)

0.030(0.762)

0.050(1.27)

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Revision: 08-Feb-17 1 Document Number: 91000

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