HE System Electronic - fortronic.it · 2018-06-28 - 16 - HE SYSTEM ELECTRONIC – We power your performance HE-standard modul - CuSiAg Copper - Cu Silicium - Si Silver - Ag CuSiAg

HE SYSTEM ELECTRONIC – We power your performance2018-06-28 - 1 -

HE SYSTEM ELECTRONIC – We power your performance

HE System Electronic- optimized setting of SiC and Si power devices

Power Fortronic 2018


We thank you

Power Electronics uses

SiC semiconductors


Content

Introduction of HE

State of the art power electronics examples

Motivation

CuSiAg

Set up

Process flow

Reference design

HE approach

Conclusion


Revenue (2017): 14,89 Mio €

Number of employees: 95

Introduction

HE - Founded in 1984 as a Thick Film and

EMS provider

HE is a member of

Location (Metropolregion Nürnberg):

Veitsbronn

Obermichelbach

Medical 17%

Industry 27%Automotive 56%

Development 13

Administration 26

Production 56


Value Chain of power electronics

Ceramic

Silicium / Silicium Carbide

Aluminium

Copper

Silver

Thermoplast

Epoxy

…

Material

Active components

Passive components

Aluminium

Heatsinks

Housings

Glue

TIM

…

Elements /Components

Inverter

Relay / Power Switch

PFC

DC Chopper Converter

Rectifier

Power Supply

…

Moduls /Subsystems

Drive systems

Battery systems

Alternator / Generator Systems

Solar Systems

Wind Mills

…

End Product /Systems

Production / Assembly

e.g. glueing, sintering, soldering, die bonding, bonding, welding, pick and place, molding, plating, potting, packaging, …

HE activity


Cooperation on component level

SiC components , cooperation since 2014L S6304

MOSFET S4101UCF, VR 1200V, IF 20A RDSon 40 mΩ → Half Bridge, PFC

Diode BL329 S6304, VR 1200V, IF 20A → Rectifier, PFC

Diode BL338 S6302, VR 1200V, IF 10A → Half Bridge

Si components , cooperation since 2016L S6304

MOSFET SQC60000, VDS 80C → Inverter, Relais

MOSFET SQJQ112E, VDS 100V → Inverter, Relais

…

HE use


Content

Introduction of HE

State of the art power electronic examples

Motivation

CuSiAg

Set up

Process flow

Reference design

HE approach

Conclusion


Product

Rectifier module, SOP 2017

DBC AlN

Soldered SiC Diodes

Al wire bonded

Soldered components and terminals

Silicone gel casting compound

Plastic housing


Product

Power stage, SOP 2016

AlN printed with Cu

Soldered MOSFETs and Diodes ( bare die )

Al wire bonded


Glued on Al heatsink

Switching frequency 1 MHz


Product

Star point relay 12V, SOP 2013

DBC Al2O3

Soldered Si MOSFETs

Al wire bonded

Ultrasonic welding Cu terminals


Full automated production ( 1,2 Mio p.a. )

Full traceability ( material and process )


Product - system integration

Eddy-current retarder control modul, SOP 2014

Automotive

Al2O3 DBC

Soldered MOSFETs

Cu - Bus bars

PCB control board

Pyrofuse included


Al die-cast housing

12V / up to 560A

Production Volume p.a. >5.000 units


Product life cycle

Test &Validation

samplebuilding

requirementsclarification

Analysis and determinationof the thermal resistance to

be achieved

Selection ofthe suitable

CuSiAgmodule

Design &Simulation

HE approach to an innovative and economic power modul- / subsystem design:

End of LifeSeries manufacturing

Industrialisation

Test &Validation


Content

Introduction of HE


Motivation

CuSiAg

Set up

Process flow

Reference design

HE approach

Conclusion


Motivation

Today‘s set up for power electronics moduls

Soldering of bare dies on a DBC ceramic

Wire bonding chip top side

Soldering or glueing of the DBC to the baseplate

Plastic housing filled with silicone gel

Alternative: Transfer mold

3 Challenges

Increase of power density

Shrink of chip size

Increase of junction temperature

Increase of reliabilty

Fast switching

Decrease of inductance

Increase of efficiency

Goal

More power & less space

Reduce the cost share of Si / SiC

Reduce the thermal resistance path

Replace wirebonding and soldering

Reduce switching losses

Reduce cost share of DC link

Optimized architecture


Content

Introduction of HE


Motivation

CuSiAg

Set up

Process flow

Reference design

HE approach

Conclusion


HE-standard modul - CuSiAg

Copper - Cu

Silicium - Si Silver - Ag

CuSiAg – the HE-standard modul

• Circuit carriers with copper surface (DCB, leadframe, busbar, IMS,...)

• Silicon or silicon carbide semiconductor

• copper clip

• Silver sintering foil


CuSiAg – the structure

Any circuit carrier with copper surface (DCB, leadframe, IMS,...)

Silver is applied to the copper

Die (Si, SiC) is placed on the silver layer and sintered

Silver is applied to the die (Si, SiC)

Copper clip is placed on the silverlayer and sintered


CuSiAg – the sinter process

structure pressure / temperature / time

Silver layers are compressedand sintered

module


Content

Introduction of HE


Motivation

CuSiAg

Set up

Process flow

Reference design

HE approach

Conclusion


CiSiAg - Process flow

load workpiececarrier (2 x (5“x7“))

(DCB,leadframe,...)

Plasma Cleaning Sintering

Laminatingsemiconductorswith alpha film

Pick & Place &Presintering

(Mosfet, IGBT,...)

Pick & Place &Presintering

(clips,...)

Laminating clipswith alpha film

Sintering

Process flow step 1: semi-finished component


Process flow

load workpiececarrier

(heatsink,leadframe,...)

Plasma Cleaning

semi-finishedcomponent

(Step 1)

Pick & Place &press

(semi finishedelement)

Gate bonding Final assembly

Process flow step 2: Arrangement of semi finished component

dispensing glue

glue drying welding


Content

Introduction of HE


Motivation

CuSiAg

Set up

Process flow

Reference design

HE approach

Conclusion


Reference design

Concept 1: DCB, soldered & bonded Concept 2: Leadframe, sintered Concept 3: DCB, sintered, Heatspreader

Rth = 1,52 K/W Rth = 0,74 K/W Rth = 0,48 K/W

cost cost cost

Bridge circuit: 15kW (48 V / 200 ARMS / 12 kHz / THeatsink = 125 °C air or liquid cooled ) target Rth = 1,59 K/W


Reference design

• Single, low-inductance half bridge with• Back- and Top-Side sintered components• SiC-Mosfets (alternatively Si-Mosfet, IGBT & Diode)• Integrated shunt• NTC(Signal contact not shown)

150 mm x 30 mm x 45 mm (ROHM S4002 / S4003)

Bridge circuit: 470 V / 180 A / 25 kHz / liquid-cooled 75 °C max.

DC link capacitors

cooling element

modules

DC-supply

AC busbars


ICSS – intelligent current switch

Intelligent switch for 48 V and HV applications• Mosfets are selected according to the application (48 V, HV,...)• Isolation is selected according to the application ( 48V, HV, … )• Number of parallel mosfets according to requirements, e.g.

• Control circuit directly above the Mosfets

800 A 9 Mosfets parallel550 A 6 Mosfets parallel400 A 4 Mosfets parallel

Reference design


Reference design

Module construction over several levels

Separation of power and signallead frames on at least two levels

Power leadframe with sinteredsemiconductors

Signal lead frame for gatecontrols, NTC and shuntsignals


130 mm

102 mm

+ 48 V

U V W

Pressfit-pinsposition tbd.

Mosfet:VishaySQC60000EKGD(top & bottom sintered)

Base plategnd potential(low-inductancemodule)

gnd

Reference design

strain relief

NTC

Inverter circuit: 48 V, uses MOSFETs


Base plateAl anodised

Busbar Cu

Reference design

Cover


Content

Introduction of HE


Motivation

CuSiAg

Set up

Process flow

Reference design

HE approach – from the customer requirements to thedesign

Conclusion


HE-Approach

Consistent design based on the thermal boundary conditions by the HE approach:

1. Analysis of the boundary conditions2. Calculation of the power dissipation

and the Rth

3. Selection of the appropriate CuSiAgconcept based on the Rth

4. Construction of the CuSiAg solution inthe available installation space

5. Thermal and electrical simulation of theverification of the results

6. Fine tuning with the customer7. sample building8. Test & design validation at the

customer and HE

Test &Validation

samplebuilding

requirementsclarification

Analysis and determinationof the thermal resistance to

be achieved

Selection ofthe suitable

CuSiAgmodule

Design &Simulation

1. Analysis of the boundary conditions2. Calculation of the power dissipation

and the Rth

3. Selection of the appropriate CuSiAgconcept based on the Rth


Analysis and determination of the thermal resistance to be achieved

=

= +

2+ +

1

4

= +

2

= + +

1. Calculation of power dissipation:

2. Analysis of thermal boundary conditions: Theatsink

Tmax

DT = Tmax - Theatsink

max. acceptable Rth = DT / PVmax3. calculation:

HE-Approach


Selection of the suitable CuSiAg module

HE-Approach

=layer thickness

∗ Thermal Resistance

Example: soldering /IMS

sintering /Leadframe

Typical values(selection)

l[W/mK]

Typical layerthickness [mm]

Rth[K/W]

Rth[K/W]

semiconductorSilicium 148

0,07 0,07

link layersolder paste 44 0,08 – 0,1

0,06 0,01sinter paste 100 0,03 .. 0,05

circuit carriersAl2O3 24 0,38

1,79 0,04copper 390

FR4 / HDI 0,3 .. 3 0,4 .. 3,2

IMS 0,12 11

TIMGap-Filler (el. leitend) 50 0,25

0,7 1,08Gap-Filler (isolierend) 6 .. 11 0,5 .. 1

Phase-Change 3,8 0,05

heat-conducting adhesive 1,5 .. 3 0,1

cooling unitAluminium 200

n.a. n.a.

2,62 1,2

Rth


Content

Introduction of HE


Motivation

CuSiAg

Set up

Process flow

Reference design

HE approach

Conclusion


CuSiAg - the right choice

CuSiAg stands for sintering instead of soldering clips instead of bonding wires

high integrationdensity, loadcapacity & servicelife

• the heat dissipation from thesemiconductor is significantlyimproved by sintering.

• the sintered compound is stable up tothe melting point of the silver (962°C), solder ages thermally from 125 °C.

• reduced chip area with increasedcurrent carrying capacity

• Thin and unbreakable Ag jointbetween Chip and Cu

• the clamp leads to an smoothintroduction of the current into thesemiconductor, no punctual loads ofthe chip as with the bonding wire.

• Best current distribution

an optimizedproduction process

• shorter process time • higher output

with reducedsystem costs

• reduced coolant temperature• higher switching frequencies possible• possibly lower DC link capacity

• Very low-inductance connection


DBC, Al bond wire

Sintered / glued

components

Leadframe,

Cu - Clip

Sintered / glued

Al – bar,

Leadframe, Cu – Clip,Sintered / glued

Flexible 3D –structure,

„intelligent“ Clip

power electronics:

high power density, low inductance, high flexibility, cost effective

CuSiAg - the right choice


HE SYSTEM ELECTRONIC – We power your performance

Many thanks for your attention !We are pleased to answer your questions.

Klaus Aßmann - [email protected]+49 911 97581 34

www.he.system.com

mailto:[email protected]

http://www.he.system.com/

Documents

HE System Electronic - fortronic.it · 2018-06-28 - 16 - HE SYSTEM ELECTRONIC – We power your performance HE-standard modul - CuSiAg Copper - Cu Silicium - Si Silver - Ag CuSiAg