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Harvard University New Precursors for ALD of High-k Dielectrics Roy G. Gordon, Jean-Sébastien Lehn, Yiqun Liu, Kyoung H. Kim, Zhengwen Li and Michael Coulter Harvard University Cambridge, MA Huazhi Li, Ralph Pugh and Deo Shenai Rohm and Haas Company North Andover, MA

Harvard University Cambridge, MA Rohm and Haas …faculty.chemistry.harvard.edu/files/gordon/files/new_precursors...ALD HfO Harvard University 2 from stable Hf amidinate precursors

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Har

vard

Uni

vers

ity

New

Pre

curs

ors

for A

LD

of H

igh-

k D

iele

ctric

s

Roy

G. G

ordo

n,Je

an-S

ébas

tien

Lehn

, Yiq

unLi

u,

Kyo

ung

H. K

im, Z

heng

wen

Li a

nd M

icha

el C

oulte

rH

arva

rd U

nive

rsity

Cam

brid

ge, M

A

Hua

zhiL

i, R

alph

Pug

h an

d D

eoSh

enai

Roh

m a

nd H

aas

Com

pany

Nor

th A

ndov

er, M

A

Har

vard

Uni

vers

ity

ALD

HfO

2fr

om s

tabl

e H

fam

idin

ate

prec

urso

rs

Stab

le, a

mor

phou

s hi

gh-k

die

lect

rics

=> L

aLuO

3ha

s th

e be

st p

rope

rtie

s

Vola

tile

Prec

urso

rs fo

r Lan

than

um O

xide

ALD

of L

a 2O

3an

d La

AlO

3

Vola

tile

Prec

urso

rs fo

r Lut

etiu

m O

xide

Out

line

Har

vard

Uni

vers

ity

Hig

h-k

HfO

2or

ZrO

2w

ith v

ery

low

ele

ctric

al le

akag

e ne

eded

Why

Mor

e St

able

Hfa

nd Z

rPre

curs

ors?

Car

bon

impu

rity

in fi

lms

incr

ease

s le

akag

e

Ther

mal

dec

ompo

sitio

n of

org

anic

pre

curs

ors

adds

C to

film

s

Ther

mal

dec

ompo

sitio

n de

stro

ys u

nifo

rmity

and

con

form

ality

Dep

ositi

on T

~ 3

50 o C

nee

ded

for H

fAlO

xw

ith A

LD A

l 2O3

Hfa

lkyl

amid

epr

ecur

sors

dec

ompo

se to

o qu

ickl

y at

350

o C

Har

vard

Uni

vers

ity

Haf

nium

tetr

akis

(N,N

’-dim

ethy

lform

amid

inat

e)

Neg

ligib

le re

sidu

e af

ter T

G

CH

3

N

NC

H3

H

H3C

N

N CH

3H

CH

3N

N CH

3H

CH

3

N

NH

3C

H

Hf

=> S

uffic

ient

vol

atili

ty a

nd th

erm

al s

tabi

lity

for A

LD

TG d

ata

for

Hf(M

e 2-fm

d)4

Tem

pera

ture

(oC

)

Remaining mass (%)

187

o C

Har

vard

Uni

vers

ityHaf

nium

Am

idin

ates

CH

3

N

NC

H3

R

H3C

N

N CH

3R

CH

3N

N CH

3R

CH

3

N

NH

3C

R

Hf

bmd

pmd

amd

fmd

187

141

H

246

<20

CH

2CH

2CH

3

251

80C

H2C

H3

221

171

CH

3

TG T

½o C

Mel

ting

Poi

nt,o

CR

R =

CH

2CH

2CH

3(p

ropy

l) is

a li

quid

Hfp

recu

rsor

20 o C

R =

H is

the

mos

t vol

atile

; liq

uid

in b

ubbl

er >

141

o CSo

lid a

t 20

o C, s

olub

le fo

r use

in d

irect

liqu

id in

ject

ion

Har

vard

Uni

vers

ity

Ther

mal

Sta

bilit

y of

Hfa

nd Z

rPre

curs

ors

No

deco

mpo

sitio

n of

Hf

or Z

ram

idin

ates

dur

ing

1000

hou

rs a

t 200

o C:

Hfa

nd Z

ram

ides

com

plet

ely

deco

mpo

sed

in a

few

hou

rs

at 2

00 o C

:

Prec

urso

rs d

isso

lved

in m

esity

lene

-d12

, hea

ted,

an

d N

MR

spe

ctra

take

n pe

riodi

cally

020406080100

120

02

46

810

1214

Tim

e (h

)

% of complex remaining

Zr(N

Me2

)4Zr

(NEt

2)4

Hf(N

Me2

)4H

f(NM

eEt)4

020406080100

120

020

040

060

080

010

00Ti

me

(h)

% of complex remainingZr

(MM

M)4

Hf(M

MM

)4

Hf(M

EM)4

Zr(M

e 2-a

md)

4H

f(Me 2

-am

d)4

Hf(M

e 2-p

md)

4

Har

vard

Uni

vers

ity

Ther

mal

Sta

bilit

y of

Hfa

nd Z

rAm

idin

ates

No

deco

mpo

sitio

n du

ring

140

hour

s at

250

o CD

ecom

posi

tion

afte

r ~2

00 h

ours

at 2

80 o C

=> H

fand

Zra

mid

inat

es m

uch

mor

e st

able

than

am

ides

020406080100

120

050

100

150

200

250

300

350

Tim

e (h

)

% of complex remaining

Zr(M

MM

)4

Hf(M

MM

)4

020406080100

120

020

4060

8010

012

014

0Ti

me

(h)

% of complex remaining

Zr(M

MM

)4

Hf(M

MM

)4

Zr(M

e 2-a

md)

4H

f(Me 2

-am

d)4

Zr(M

e 2-a

md)

4H

f(Me 2

-am

d)4

Har

vard

Uni

vers

ity

Vapo

rizat

ion

Rat

es o

f Haf

nium

Am

idin

ates

Hig

hest

rate

with

Hft

etra

kis(

N,N

’-dim

ethy

lform

amid

inat

e)

=> H

igh

evap

orat

ion

rate

s fr

om th

erm

ally

sta

ble

liqui

ds

Har

vard

Uni

vers

ity

ALD

of H

fO2

from

Am

idin

ate

Prec

urso

rs

ALD

Con

ditio

ns

Typi

cal b

ubbl

er te

mpe

ratu

res

100-

150

o C(m

p 14

1 o C

)

ALD

with

H2O

sel

f-lim

iting

at ~

0.1

nm p

er c

ycle

ALD

“w

indo

w”

~150

to ~

400

o C

Elec

tric

al P

rope

rtie

s (n

on-o

ptim

ized

)

Die

lect

ric c

onst

ant >

16

Bre

akdo

wn

field

~6

MV/

cm

Har

vard

Uni

vers

ity

Stab

le A

mor

phou

s H

igh-

k D

iele

ctric

s

2.5

2.0

22D

yScO

3

4.4

3.5

3.9

SiO

2

4.9

2.8

8A

l 2O3

2.1

2.1

32La

LuO

3

2.5

2.0

22G

dScO

3

2.6

2.0

20La

2Hf 2O

7

3.2

1.9

18La

AlO

3

3.4

1.5

12H

fSiO

4

Val

ence

band

offs

etC

ondu

ctio

nba

nd o

ffset

k

=> L

aLuO

3ha

s th

e be

st p

rope

rtie

s!

Har

vard

Uni

vers

ity

Adv

anta

ges

of L

aLuO

3as

hig

h-k

diel

ectr

ic

Hig

h di

elec

tric

cons

tant

(k~3

2) fo

r am

orph

ous

pha

se

Sha

rp in

terfa

ce w

ith S

i, an

d no

low

-k in

terla

yer

Sta

ys a

mor

phou

s an

d do

esn’

t for

mal

loys

with

Sio

r Ge

afte

r res

pect

ive

S/D

act

ivat

ion

anne

als

Bot

h ba

nd o

ffset

s w

.r.t S

iare

larg

e (2

.1 e

V),

help

ing

to a

chie

ve lo

w le

akag

e cu

rren

ts

Har

vard

Uni

vers

ity

Am

idin

ate

Prec

urso

rs fo

r Lan

than

ides

Ln

NN

NN

NN

R2

R1

R2

R2

R1

R1

R3

R3

R3

The

R1

and

R2

are

alky

l gro

ups:

isop

ropy

l, te

rt-b

utyl

, eth

yl, e

tc.

The

choi

ces

of R

naf

fect

the

vola

tility

, rea

ctiv

ity a

nd s

tabi

lity.

R3

can

be a

n al

kyl g

roup

or h

ydro

gen

Har

vard

Uni

vers

ity

Ther

mog

ravi

met

ricA

naly

sis

of

Lant

hanu

m A

mid

inat

es

NH C

N

N CH

NN

HCN

La

NC

N

N CN

NCN

LaCH

3

CH

3H

3C

NC

N

N CN

NCN

LaCH

3

CH

3H

3CH3C

CH

3 CH

3

CH

3C

H3

H3C

=> V

apor

izat

ion

tem

pera

ture

incr

ease

s w

ith m

olec

ular

mas

s

Har

vard

Uni

vers

ity

Vapo

r Pre

ssur

es o

f Lan

than

um P

recu

rsor

s

=> L

a(iP

r 2-fm

d)3

is m

ost

vola

tile

La c

ompo

und

know

n,

60 m

Torr

at 1

00 o C

La(iP

rCp)

3

NH C

N

N CH

NN

HCN

La

Har

vard

Uni

vers

ity

ALD

of L

a 2O

3 => 0

.16

nm p

er c

ycle

=> n

eglig

ible

del

ay

in n

ucle

atio

n on

SiH

NH C

N

N CH

NN

HCN

La

tris

(N,N

’-diis

opro

pyl-

form

amid

inat

o)la

ntha

num

(i Pr 2

-fmd)

3La

Prec

urso

rs:

H2O

and

Har

vard

Uni

vers

ity

Gro

wth

per

La

Cyc

le fo

r ALD

LaA

lO3

Bub

bler

tem

pera

ture

90

to 1

20 o C

Subs

trat

e te

mpe

ratu

re 3

00 o C

Gro

wth

eve

n at

bub

bler

te

mpe

ratu

re <

100

o C

=> A

LD s

atur

atio

n at

0.

08 n

m p

er L

a cy

cle

NH C

N

N CH

NN

HCN

La

tris

(N,N

’-diis

opro

pyl-

form

amid

inat

o)la

ntha

num

(i Pr 2

-fmd)

3La

Prec

urso

rs:

Me 3

Al,

H2O

and

120

o C11

0o C

100

o C90

o C

Har

vard

Uni

vers

ity

Com

posi

tion

of A

LD L

a xA

l 1-xO

3/2

Gro

wth

con

ditio

ns:

Bub

bler

tem

pera

ture

120

o CSu

bstr

ate

tem

pera

ture

300

o C

=> C

ompo

sitio

n co

ntro

l by

cha

ngin

g ra

tio o

f pr

ecur

sor d

oses

=> 2

x a

s m

any

Al a

tom

s as

La

atom

s pe

r dos

e

NH C

N

N CH

NN

HCN

La

tris

(N,N

’-diis

opro

pyl-

form

amid

inat

o)la

ntha

num

(i Pr 2

-fmd)

3La

Prec

urso

rs:

Me 3

Al,

H2O

and

Har

vard

Uni

vers

ity

Prec

urso

r Rea

ctiv

ity w

ith S

iHSu

rfac

e by

IR

=> C

ompl

etel

y un

iform

sur

face

cov

erag

e by

La

amid

inat

e

Hfa

lkyl

amid

eon

ly

reac

ts w

ith h

alf o

f th

e Si

-H b

onds

on

the

surf

ace

even

af

ter m

any

cycl

es

La a

mid

inat

e re

acts

w

ith n

early

all

the

Si-H

bon

ds in

onl

y 3

cycl

es

Det

ails

of t

he in

frar

ed s

pect

ra w

ere

give

n in

a p

aper

this

mor

ning

by

J. K

won

, M. D

ai, E

. Lan

gere

is, Y

. Cha

bal,

K.-H

. Kim

and

R. G

. Gor

don.

Har

vard

Uni

vers

ity

TEM

sof

ALD

LaA

lO3an

d G

dScO

3

=> S

harp

inte

rfac

es w

ith s

ilico

n w

ithou

t int

erla

yers

=> U

nifo

rm n

ucle

atio

n an

d th

ickn

ess

Har

vard

Uni

vers

ity

Leak

age

Cur

rent

thro

ugh

ALD

La 2

O3

Vapo

r sou

rce:

a s

olut

ion

of th

e La

pre

curs

or (m

p 19

4 o C

)va

poriz

ed w

ith a

n M

KS

MD

D s

yste

m

Low

leak

age

curr

ent s

imila

r to

film

s m

ade

from

a b

ubbl

er.

=> n

eglig

ible

car

bon

cont

amin

atio

n fr

om s

olve

nt

Har

vard

Uni

vers

ity

Ther

mal

Gra

vim

etric

Ana

lysi

s of

Lu

tetiu

m tr

is(N

,N’-d

iisop

ropy

lace

tam

idin

ate)

Evap

orat

ion

with

neg

ligib

le re

sidu

e

=> S

uffic

ient

vol

atili

ty a

nd th

erm

al s

tabi

lity

for A

LD

NC

N

N CN

NCN

LuCH

3

CH

3H

3C

Har

vard

Uni

vers

ity

Ther

mal

Gra

vim

etric

Ana

lyse

s of

La

ntha

num

and

Lut

etiu

m A

mid

inat

es

NH C

N

N CH

NN

HCN

LuN

CN

N CN

NCN

LuCH

3

CH

3H

3C

NC

N

N CN

NCN

LuCH

3

CH

3H

3CH3C

CH

3 CH

3

CH

3C

H3

H3C

=> L

u am

idin

ates

are

slig

htly

mor

e vo

latil

e th

an L

a am

idin

ates

Har

vard

Uni

vers

ity

ALD

of L

u 2O

3an

d La

LuO

3

ALD

exp

erim

ents

and

film

cha

ract

eriz

atio

n ar

e un

derw

ay. .

. .

Har

vard

Uni

vers

ity

Con

clus

ions

Hfa

mid

inat

es a

re m

ore

stab

le th

an H

fam

ides

Hfa

mid

inat

es a

re s

uita

ble

as A

LD p

recu

rsor

s

La a

nd L

u am

idin

ates

are

vol

atile

ALD

pre

curs

ors

LaLu

O3

is a

ver

y pr

omis

ing

high

-k d

iele

ctric

Cur

rent

wor

k on

ALD

of L

aAlO

3, Lu

2O3

and

LaLu

O3

Har

vard

Uni

vers

ity

Am

idin

ate

prec

urso

rs s

uppl

ied

by R

ohm

and

Haa

s C

ompa

ny

MD

D li

quid

del

iver

y sy

stem

sup

plie

d by

MK

S In

stru

men

ts, I

nc.

Infr

ared

dat

a fr

om J

inhe

eK

won

, Min

Dai

, Erik

Lan

gere

is,

Lesz

ekW

ielu

nski

and

Yves

J. C

haba

l, R

utge

rs U

nive

rsity

Supp

orte

d in

par

t by

the

US

Nat

iona

l Sci

ence

Fou

ndat

ion

Ack

now

ledg

emen

ts