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This was a presentation given in a university solid state course. It was meant as an outline of information on several general ideas of the Hall Effect.
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Outline
• Discovery and History of Hall Effect– Edwin Hall, 1879– Anomalous Hall Effect in 1950’s– Quantum Hall Effect 1980
• Overview/Review of Basic Hall Effect– Carrier types– Open vs. closed orbits
• Quantum Hall Effect Overview• Current Applications of Hall Effect in Research
Discovery: Edwin Hall
• Discovered in 1879• Observed small voltage perpendicular to
current in a material within a magnetic field.– The Lorentz force presses its charge
carriers against one side of the conductor creating a voltage
– The ratio of the voltage created to the amount of induced current is known as the Hall resistance
• Allows one to find the sign of the charge carriers
The Hall Voltage: This can be obtained from the derivations to in the next slides
Basic Overview/Review
Magnetoresistance
Hall coefficient relation
Force on each electron
From Ashcroft + Mermin eq 1.12
Basic Overview/Review
Cyclotron Frequency of Electron
With this relation we get two coupled equations.
That simplify to this
Hall Field Ey has no transverse current so jy=0
Hall Coefficient is simplified to this
• Klaus von Klitzing made the unexpected discovery in 1980 that the Hall conductivity was exactly quantized
Quantum Hall Effect: History
• Originally predicted by Ando, Matsumoto, and Uemura in 1975
• Resistivity/Conductivity in Hall devices, under low temperatures and high magnetic fields, becomes quantized
Quantum Hall Effect: Conditions
• Need electrons confined in plane but free to move within it– Originally observed in heterojunction– Observed in FET– Recently observed in graphene
• Temperature of a few Kelvin– Graphene at room temperature
• Magnetic field on order of TeslaGraph from Novoselov et al. showing QHE in graphene at room temperature. Blue is ρxx. Red is σxy.
Quantum Hall Effect: Landau Levels
• Quantized energy levels of electron orbits in a material with a magnetic field
• Solving Hamiltonian with magnetic field in Landau gauge yields:
• Expression for energy state is quantized, directly proportional to B• Gives rise to De Haas-van Alphen and Shubnikov-de Haas effects –
peaks at distinct • In material with impurities, small differences in energy between states
of same Landau level
Quantum Hall Effect: Qualitative Explanation
• Effect seen by changing magnetic field and holding VH or J constant
• As B increases, increased degeneracy of states
• Two kinds of Landau levels– Localized: do not carry current– Extended: carry current
• If Fermi level is in localized Landau energy state, constant J, constant σxy
• If Fermi level is in extended Landau state, decrease in J, increase in σxy
Fractional Quantum Hall Effect
• Discovered 1982• Peaks seen at fractional values with odd
denominators• Due to electron electron interactions and impurities
in system
Hall Resistance vs. Magnetic field graph for heterojunction displaying fractional QHE. From Eisenstein and Stormer.
Applications
• Metrology– Obtaining an exact quantum of resistance
• Sensors– Detecting field changes– Effective use in:
• Cars• Keyboards• Calculating Flux Density
Metrology
• Obtaining a quantum of resistance has allowed for a definition of a new standard of electrical resistance.
• This quantum is known as the von Klitzing constant.• Can effectively calibrate resistance measurements.• Can find a precise determination of the fine
structure constant used in QED.
von Klitzing constant
Sensors
• Simplest form: analog transducer– Returns a voltage
• Can be used as a timing device for motors and discrete position state detectors.
A Hall sensor can be used in timing operations for tachometers and similar applications.
It can also be used to detect the position of a magnetic object in a system.