HA12231FP

Audio Signal Processor for Car Deck (PB 1 Chip)

ADE-207-327A (Z)2nd Edition

Jan. 2001

Description

HA12231FP is silicon monolithic bipolar IC providing PB equalizer system and music sensor system inone chip.

Functions

• PB equalizer × 2 channel

• Music sensor × 1 channel

• Line amp. × 2 channel

• Line mute × 2 channel

Features

• No use external parts for PB equalizer. (Fixed characteristics built-in)

• Available to change music sensing level by external resistor.

• Available to change frequency response of music sensor by external capacitor.

• Different type of PB equalizer characteristics selection (120 µs/70 µs) is available.

• Line mute ON/OFF is avalable.

• This IC is strong for a cellular phone noise.

Ordering Information

Functions

Product Package PBOUT-Level PB-EQ Music Sensor Mute

HA12231FP FP-20DA 450 mVrms

HA12231FP

2

Pin Description, Equivalent Circuit (VCC = 9 V, A system of single supply voltage,Ta = 25°C, No Signal, The value in the table shows typical value.)

Pin No. Pin Name Note Equivalent Circuit Description

16 TAI(L) V = VCC/2

VCC/2

V

100 k

Tape input

5 TAI(R)

14 RIP V = VCC/2

GND

VCC

V

Ripple filter

13 MS DET V = VCC

GND

Time constant pin for rectifier

15 PBOUT(L) V = VCC/2 VCC

GND

V

PB output

6 PBOUT(R)

1 VREF V = VCC/2 VCC

GND

V

Reference output

17 EQOUT(L) V = VCC/2 Equalizer output (120 µ)

4 EQOUT(R)

Note: MS: Music Sensor

HA12231FP

3

Pin Description, Equivalent Circuit (VCC = 9 V, A system of single supply voltage,Ta = 25°C, No Signal, The value in the table shows typical value.) (cont.)

Pin No. Pin Name Note Equivalent Circuit Description

11 VCC Power supply

19 FIN(L)

V

Equalizer input

18 RIN(L)

3 RIN(R)

2 FIN(R)

9 Mute

22 k

GND100 k

Mode control input

10 FOR/REV

8 120/70

12 MS I

100 k200

MS VCC

D GND

MS output (to MPU) *

7 MS GV V = VCC/2

V90 k

MS gain pin *

20 GND GND pin

Note: MS: Music Sensor

HA12231FP

4

Block Diagram

+

−

+

20 19 18 17 16 15 14

MS

13 12 11

1

PB

OU

T(R

)

VC

C

DV

CC

MS

MS

DE

T

RIP

PB

OU

T(L

)

TA

I(L)

EQ

OU

T(L

)

RIN

(L)

FIN

(L)

GN

DV

RE

F

2 3 4 5

FIN

(R)

RIN

(R)

EQ

OU

T(R

)

TA

I(R

)

MS

GV

6 7 8 9

120/

70

Mut

e

FOR

/RE

V

10

−

+LPFRECT

I.A.

MA

S/R

+

+

I.A.

−

+

HA12231FP

5

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit Note

Supply voltage VCC Max 15 V

Power dissipation Pd 400 mW Ta ≤ 85°C

Operating temperature Topr −40 to +85 °C

Storage temperature Tstg −55 to +125 °C

HA12231FP

6

Electrical CharacteristicsIt

emS

ymb

ol

Tes

t C

on

dit

ion

Ap

plic

atio

n T

erm

inal

IC C

on

dit

ion

Inp

ut

Sp

ecif

icat

ion

Ou

tpu

t

Qui

esce

nt c

urre

nt

Inpu

t AM

P. g

ain

Cha

nnel

sep

arat

ion

PB

-EQ

gai

n

I Q

Sig

nal h

andl

ing

GVIA

Vom

ax

T.H

.D.

TH

D

GV E

Q 1

k

GV E

Q 1

0k(1

)

GV E

Q 1

0k(2

)

PB

-EQ

max

imum

out

put

VO

M

(Ta

= 2

5°C

, VC

C =

9 V

, PB

OU

T L

evel

= 4

50 m

Vrm

s (=

0 d

B))

VIH

PB

-EQ

TH

D

Noi

se v

olta

ge le

vel c

onve

rted

in in

put

TH

D-E

Q

VN

MS

sen

sing

leve

l

MS

out

put l

eak

curr

ent

MU

TE

atte

nuat

ion

Con

trol

vol

tage

VO

N

MS

out

put l

ow le

vel

VO

L

CT

RL

I OH

Mut

e

VIL

Not

e:1.

VC

C =

7.2

V

Min

22.5

12.0 50.0

37.0

33.0

29.0

300

3.5

−18.

0

70.0

−0.2

Typ

23.5

13.0

0.05

60.0

40.0

36.0

32.0

600

6.0 0.1

1.2

−14.

0

1.0

0.0

80.0

R 5 2 2/3 2 2 2/3 2/3

2/3 5 5 5

L 16 19

19/1

8

19 19

19/1

8

19/1

8

16 16 16

R 6 6→ 15 4 4 4

19/1

84

17

4 4 6 6 12 6

L 15

516

615

516

615 15

→ 6 17 17 17 17 17 15 15 12 15

11 12 12 8, 9

,10

Max

24.5 0.3 43.0

39.0

35.0 9 V

CC

0.5

2.0

−10.

0

1.5

2.0 1.0

Un

itR

e-m

ark

∗1 ∗1

mA

dBµAdB V%

mV

rms

dBdBdBdB%dBdB V

µVrm

s

fin

(Hz)

Oth

erN

o si

gnal

TH

D =

1%

Rg

= 6

80Ω

, Din

-Aud

io F

ilter

TA

I

TA

I

TA

I

FIN

FIN

/RIN

FIN

FIN

FIN

/RIN

0 0 12 0 0 0

120µ

s

120µ

s

70µs

TH

D =

1%

No

sign

al

FIN

/RIN

FIN

/RIN

0 (0)

TA

I

TA

I

TA

I

0 12

INP

UT

PB

OU

T

PB

OU

T

PB

OU

T

PB

OU

T

EQ

OU

T

EQ

OU

T

EQ

OU

T

EQ

OU

T

EQ

OU

T

EQ

OU

T

PB

OU

TM

SO

UT

PB

OU

TM

SO

UT

MS

OU

T

PB

OU

T

OU

TP

UT

1k 1k 1k 1k 1k 10k

10k

1k 1k (1k) 5k 5k 1k

PB

OU

Tle

vel(

dB

)

HA12231FP

7

Test Circuit

+

− +

2019

1817

1615

14

MS

1312

11

1

PBOUT(R)

VCC

MS

MS DET

RIP

PBOUT(L)

TAI(L)

EQOUT(L)

RIN(L)

FIN(L)

GND VREF

23

45

FIN(R)

RIN(R)

EQOUT(R)

TAI(R)

MS GV

67

89

120/70

Mute

FOR/REV 10

−+LP

F

R4

5.1k

R6

10k

R5

10k

PB

EQ

C2

22µ

C3

0.1µ

C12

0.1µ

R2

680

SW

5

FIN

SW

9

SW

7Lc

h

Rch

SW

12

R3

5.1k

R12

5.1k

R13

5.1k

R10 10

k

SW

6

SW

8P

B

EQ

RE

CT

I.A.

R7

24k

MA

+

I.A.

−+ +C

122

µ

R1

680

R15

680

R14

680

R9

330k

R8

3.9k

R11

10k

+

C4

0.47

µ+

C5

2.2µ

C10

2.2µ

+

C6

0.01

µ

RIN

RchSW

4

Lch

TA

I

FINR

INS

W3

TA

I

120

70

EX

T

PB

LM

S PB

R

SW

13

SW

10O

FF

ON

EX

T

SW

2

OF

FO

N

SW

1

SW

11F

OR

RE

V

EX

T

Not

es:

1. R

esis

tor

tole

ranc

e ±1

%2.

Cap

acito

r to

lera

nce

±1%

3. U

nit

R: Ω

, C: F

AU

DIO

SG

DC

SO

UR

CE

1

DC

SO

UR

CE

2

DC

SO

UR

CE

3

DC

VM

AC

VM

1

++

+

C9 1µ

C7

100µ

C8

0.33

µ

C11

0.47

µ

+

C13 22

µC

14 22µ

Dis

tort

ion

anal

yzer

Osc

illo

scop

e

Noi

sem

eter

NO

ISE

ME

TER

WIT

H C

CIR

/AR

M F

ILTE

RA

ND

DIN

/AU

DIO

FIL

TER

AC

VM

2

HA12231FP

8

Functional Description

Power Supply Range

HA12231FP is designed to operate on single supply only.

Table 1 Supply Voltage Range

Product Single Supply

HA12231FP 7.2 V to 12.0 V

Reference Voltage

HA12231FP provides the reference voltage of half the supply voltage that is the signal grounds. As thepeculiarity of this device, the capacitor for the ripple filter is very small about 1/100 compared with theirusual value. The block diagram is shown as figure 1.

−+

−+

1

11 VCC

RIP

C11µ

14+

20to Line Amp.

VREF

MS block

: Internal reference voltage

Figure 1 The Block Diagram of Reference Supply Voltage

HA12231FP

9

Operating Mode Control

HA12231FP provides fully electronic switching circuits. And each operating mode control are controlledby parallel data (DC voltage).

When a power supply of this IC is cut off, for a voltage, in addition to a mode control terminal even thoughas do not destruct it, in series for resistance.

Table 2 Threshold Voltage (VTH)

Pin No. Lo Hi Unit Test Condition

8, 9, 10 −0.2 to 1.0 3.5 to VCC V Input Pin Measure

V

Table 3 Switching Truth Table

Pin No. Pin Name Low High

8 120/70 120 µ (Normal) 70 µ (Metal or Chrome)

9 Mute Mute OFF Mute ON

10 FOR/REV Forward Reverse

Notes: 1. Each pins are on pulled down with 100 kΩ internal resistor.Therefore, it will be low-level when each pins are open.

2. Over shoot level and under shoot level of input signal must be the standardized.(High: VCC, Low: −0.2 V)

3. Reducing pop noise is so much better for 10 kΩ to 22 kΩ resisitor and 1 µF to 22 µF capacitorshown figure 2.

Input Pin

1 to 22 µFMPU

10 to 22 kΩ

+

Figure 2 Interface for Reduction of Pop Noise

HA12231FP

10

Input Block Diagram and Level Diagram

The each level shown above is typical valuewhen offering PBOUT level to PBOUT pin.(EQ Amp. Gv = 40 dB, f = 1 kHz)

−+

EQ Amp.

the otherchannel

C10.1µF

Input Amp.60mVrms(−22.2dBs)EQOUT

TAI30mVrms

(−28.2dBs)

FINPBIN0.6mVrms(−62.2dBs)RIN

VREF

PBOUT LevelHA12231FP: 450 mVrms (−4.7 dBs)

0dBPBOUT

MUTE

−+

R25.1kΩ 23.5dB

R15.1kΩ

Figure 3 Input Block Diagram

Adjustment of Playback Reference Operate Level

After replace R1 and R2 with a half-fix volume of 10 kΩ, adjust playback reference operate level.

HA12231FP

11

The Sensitivity Adjustment of Music Sensor

Adjusting MS Amp. gain by external resistor, the sensitivity of music sensor can set up. The music sensorblock diagram is shown in figure 4, and frequency response is shown in figure 5.

−+

TAI(L)

TAI(R)

C10.33µF

R1330kΩ

MS

MS Amp.

23.5dB

CEX2

REX2 REX1

MS DETMS Gv

66.7kΩ

90kΩ

CEX1+

LPF

RECT

VCC

S/R

DVCC

25kHz

−6dB

23.5dB

+

GND

RL

Microcomputer

16 7 13

12

20

5

33.3kΩ

−3.5dB

Figure 4 Music Sensor Block Diagram

GV2

GV1

10 100k25k10k1k

f3 f4

f2f1

f (Hz)

GV (

dB)

100

Repeat mode (REP)

Search mode (SER)

Figure 5 Frequency Response

HA12231FP

12

1. Search mode

GV1 = (23.5dB − 3.5dB) + 20log 1 + [dB]90kREX2

f1 = [Hz], f2 = 25k [Hz]12π ⋅ CEX2 ⋅ REX2

2. Repeat mode

GV2 = (23.5dB − 3.5dB) + 20log 1 + [dB]90kREX1

f3 = [Hz], f4 = 25k [Hz]12π ⋅ CEX1 ⋅ REX1

The sensitivity of music sensor (S) is computed by the formula mentioned below.

S = 12.7 − GV [dB]

S is 6 dB down in case of one-side channel.

Notes: 1. Search mode: GV1, Repeat mode: G V2

2. Standard level of TAI pin (Dolby level correspondence) = 30 mVrms

3. Standard sensing level of music sensor = 130 mVrms

Item REX1, 2 CEX1, 2 GV1, 2 f1, 3 f2, 4

S(one sidechannel)

S(bothchannel)

Search mode 24 kΩ 0.01 µF 33.5 dB 663 Hz 25 kHz −14.8 dB −20.8 dB

Repeat mode 2.4 kΩ 1 µF 51.7 dB 66.3 Hz 25 kHz −33.0 dB −39.0 dB

Note: This MS presented hysteresis lest MS(OUT) terminal should turn over again High level or Low level,in case of thresh S level constantly.

Music Sensor Time Constant

1. Sensing no signal to signal (Attack) is determined by C1, 0.01 µF to 1 µF capacitor C1 can beapplicable.

2. Sensing signal to no signal (Recovery) is determined by C1 and R1, however preceding (1), 100 kΩ to 1MΩ can be applicable.

Music Sensor Output (MS(OUT))

As for the internal circuit of music sensor block, music sensor output pin is connected to the collector ofNPN type directly, therefore, output level will be “high” when sensing no signal. And output level will be“low” when sensing signal.

IL =

* MS(OUT)LO : Sensing signal (about 1V)

DVCC − MS(OUT)LO*RL

Note: Supply voltage of MS(OUT) pin must be less than VCC voltage.

HA12231FP

13

Characteristic Curves

Transmission Frequency (MHz)

EQOUT Noise Output vs. Transmission Frequency

EQ

OU

T N

oise

Out

put

(dB

s)

0

−20

−10

−30

−40

−50

−60100 100001000

EQOUT(L), VCC = 9 V,Vin = 0 dBm, 120 µs

toward Cellular phone noise

FIN(L)RIN(L)

High Frequency Input Vin (dBm)

EQOUT Noise Output vs. Transmission Signal Input Level

EQ

OU

T N

oise

Out

put

(dB

s)

0

−20

−10

−30

−40

−60

−80

−70

−50

−50 −40 −30 −10 0 10 20−20

EQOUT(L), VCC = 9 V,120 µs, f = 900 MHz

toward Cellular phone noise

FIN(L)RIN(L)

HA12231FP

14

Frequency (Hz)

Input Amp. Gain vs. Frequency

Gai

n (

dB)

25

15

20

10

5

010 100 1k 100k 1M10k

Supply Voltage (V)

Quiescent Current vs. Supply VoltageQ

uies

cent

Cur

rent

(m

A)

7.0

6.0

6.5

5.5

5.0

4.0

4.5

4 6 10 12 14 168

No signal70 µ

VCC = 9 V,TAI → PBOUT

HA12231FP

15

Output Level Vout (dB)

Total Harmonic Distortion vs. Output Level

T.H

.D.

(%)

10

1

0.01

0.1

−15 −10 −5 5 10 15 200

Frequency (Hz)

Total Harmonic Distortion vs. FrequencyT

.H.D

. (%

)1

0.1

0.01

0.00110 100 1k 100k10k

TAI → PBOUT, 0 dB = 450 mVrms,VCC = 9 V, Mute off

−10 dB0 dB10 dB

TAI → PBOUT, 0 dB = 450 mVrms,VCC = 9 V, Mute off

100 Hz1 kHz10 kHz

(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)

30 kHz LPF 400 Hz HPF+

30 kHz LPF

400 Hz HPF+

80 kHz LPF

HA12231FP

16

Supply Voltage (V)

1

0.1

0.01

0.0014 6 8 10 12 1614

Supply Voltage (V)

Signal Handling

Vom

ax (

dB)

30

25

20

10

0

5

15

4 6 10 12 14 168

TAI → PBOUT, 0 dB = 450 mVrms,Mute off, f = 1 kHz, T.H.D. = 1%

PBOUT(L)PBOUT(R)

TAI → PBOUT = 450 mVrms,Mute off

100 Hz1 kHz10 kHz

(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)

Total Harmonic Distortion vs. Supply VoltageT

.H.D

. (%

)

HA12231FP

17

70

50

60

40

20

0

10

30

FIN → EQOUT, VCC = 9 V120 µ70 µ

Equalizer Amp. Gain vs. FrequencyE

Q G

ain

(dB

)

Frequency (Hz)10 100 1k 100k10k

Supply Voltage (V)

Signal to Noise Ratio vs. Supply Voltage

Sig

nal t

o N

oise

Rat

io (

dB)

70

65

60

50

40

45

55

4 6 10 12 14 168

FIN → EQOUT, Vout = 0 dB = 60 mVrms,DIN-AUDIO filter

120 µs70 µs

HA12231FP

18

10

1

0.1

0.01

FIN → EQOUT, Vout = +20 dB,0 dB = 60 mVrms

120 µs70 µs

Total Harmonic Distortion vs. FrequencyT

.H.D

. (%

)

Frequency (Hz)100 1k 100k10k

30 kHz LPF 400 Hz HPF+

30 kHz LPF

400 Hz HPF+

80 kHz LPF

100

1

10

0.1

0.01

FIN → EQOUT, 0 dB = 60 mVrms,VCC = 9 V

Total Harmonic Distortion vs. Output Level (120 µs)

T.H

.D.

(%)

Output Level Vout (dB)−5 10 3530251550 20

100 Hz1 kHz10 kHz

(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)

HA12231FP

19

100

1

10

0.1

0.01

FIN → EQOUT, 0 dB = 60 mVrms,VCC = 9 V

Total Harmonic Distortion vs. Output Level (70 µs)T

.H.D

. (%

)

Output Level Vout (dB)−5 10 3530251550 20

100 Hz1 kHz10 kHz

(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)

Supply Voltage (V)

10

1

0.1

0.014 6 8 10 12 1614

FIN → EQOUT, Vout = 60 mVrms,VCC = 9 V

100 Hz1 kHz10 kHz

(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)

Total Harmonic Distortion vs. Supply Voltage (120 µs)

T.H

.D.

(%)

HA12231FP

20

Supply Voltage (V)

10

1

0.1

0.014 6 8 10 12 1614

FIN → EQOUT, Vout = 60 mVrms,VCC = 9 V

100 Hz1 kHz10 kHz

(30 kHz LPF)(400 Hz HPF + 30 kHz LPF)(400 Hz HPF + 80 kHz LPF)

Total Harmonic Distortion vs. Supply Voltage (70 µs)T

.H.D

. (%

)

Supply Voltage (V)

Signal Handling

Vom

ax (

dB)

45

40

35

25

15

20

30

4 6 10 12 14 168

FIN, RIN → EQOUT, 120 µs, 0 dB = 60 mVrms,f = 1 kHz, T.H.D. = 1%

FINRIN

HA12231FP

21

FIN → PBOUT, Vout = 12 dB (0 dB = 450 mVrms),80 kHz LPF

L→RR→L

Crosstalk vs. Frequency (CTRL)

Supply Voltage (V)

Signal HandlingV

omax

(dB

)45

40

35

25

15

20

30

4 6 10 12 14 168

FIN, RIN → EQOUT, 70 µs, 0 dB = 60 mVrms,f = 1 kHz, T.H.D. = 1%

FINRIN

Frequency (Hz)10 100 1k 100k10k

0

−20

−30

−10

−40

−60

−80

−70

−50Cro

ssta

lk (

dB)

HA12231FP

22

MS Amp. Sensitivity vs. Frequency

Frequency (Hz)10 100 1k 100k10k

10

0

−20

−30

−10

−40

MS

Sen

sing

Lev

el (

dB)

RIN → PBOUT, Vout = 12 dB (0 dB = 450 mVrms),80 kHz LPF

L→RR→L

Crosstalk vs. Frequency (CTRL)

Frequency (Hz)10 100 1k 100k10k

0

−20

−30

−10

−40

−60

−80

−70

−50Cro

ssta

lk (

dB)

TAI → PBOUT, VCC = 9 V,0 dB = 450 mVrms

SER L→HSER H→LREP L→HREP H→L

HA12231FP

23

Resistance R10 (Ω)

No-Signal Sensing Time vs. ResistanceN

o-S

igna

l Sen

sing

Tim

e (

ms)

1000

10

100

110M100k 1M10k

PBOUT

MSOUT

1000

10

100

0.1

1

Capacitance C8 (µF)

Signal Sensing Time vs. Capacitance

Sig

nal S

ensi

ng T

ime

(m

s)

0.001 0.01 1010.1

PBOUT

MSOUT

TAI → PBOUT, VCC = 9 V,f = 5 kHz, MSOUT L → H

SER 0 dB

TAI → PBOUT, VCC = 9 V,f = 5 kHz, MSOUT H → L

SER 0 dB

HA12231FP

24

Package Dimensions

Hitachi CodeJEDECEIAJMass (reference value)

FP-20DA—Conforms0.31 g

Unit: mm

*Dimension including the plating thicknessBase material dimension

*0.42 ± 0.08

0.12

0.15

M

20

101

*0.2

2 ±

0.05

0.80 Max

11

12.6

5.5

2.20

Max

13 Max

0° – 8°

0.70 ± 0.20

+ 0.20– 0.307.80

1.27

0.10

± 0

.10

1.15

0.40 ± 0.06

0.20

± 0

.04

HA12231FP

25

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you havereceived the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially highquality and reliability or where its failure or malfunction may directly threaten human life or cause riskof bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlyfor maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when usedbeyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeablefailure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or otherconsequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document withoutwritten approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductorproducts.

Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanTel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Copyright Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.

Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/Europe : http://www.hitachi-eu.com/hel/ecgAsia : http://sicapac.hitachi-asia.comJapan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw

Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk

Hitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham RoadMaidenheadBerkshire SL6 8YA, United KingdomTel: <44> (1628) 585000Fax: <44> (1628) 585160

Hitachi Europe GmbHElectronic Components GroupDornacher Stra§e 3D-85622 Feldkirchen, MunichGermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223

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