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AKGEC/IAP/FM/01
Ajay Kumar Garg Engineering College, Ghaziabad Department of ECE
Class Test-2
Course: B.Tech Semester : III Session: 2015-16 Section : EC-3Subject: Fundamental of Electronic devices Sub. Code : NEC-302Max Marks: 10 Time : 45 min
Note: Answer all the Questions.
Q.1 Why a contact Potential is developed across and open circuited P-N junction? Specify the parameters on which the contact potential depends. [2 Marks]Q.2 Explain the reverse recovery transient mechanism for the p-n junction diode. Also explain
the storage delay time. [3 Marks]
Q.3 Derive the diode equation. What are the different types of reverse bias breakdown
mechanisms? [5 Marks]
