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www.nanocmos.ac.uk Grid Infrastructures for the Electronics Domain: Requirements and Early Prototypes from an EPSRC Pilot Project R. Sinnott 1 , A. Asenov 2 , A. Brown 2 , C. Millar 1,2 , G. Roy 2 , S. Roy 2 , G. Stewart 1 1 National e-Science Centre, University of Glasgow tment of Electronics and Electrical Engineering, University of Glas [email protected]

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Grid Infrastructures for the Electronics Domain: Requirements and Early Prototypes from an EPSRC Pilot Project. R. Sinnott 1 , A. Asenov 2 , A. Brown 2 , C. Millar 1,2 , G. Roy 2 , S. Roy 2 , G. Stewart 1 1 National e-Science Centre, University of Glasgow - PowerPoint PPT Presentation

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Page 1: Grid Infrastructures for the Electronics Domain:

www.nanocmos.ac.uk

Grid Infrastructures for the Electronics Domain:

Requirements and Early Prototypes from an EPSRC Pilot Project

Grid Infrastructures for the Electronics Domain:

Requirements and Early Prototypes from an EPSRC Pilot Project

R. Sinnott1, A. Asenov2, A. Brown2, C. Millar1,2, G. Roy2, S. Roy2, G. Stewart1 1National e-Science Centre, University of Glasgow

2Department of Electronics and Electrical Engineering, University of [email protected]

Page 2: Grid Infrastructures for the Electronics Domain:

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The ChallengeThe Challenge

International Tech nology Roadmap for Semiconductors Year 2005 2010 2015 2020

MPU Half Pitch (nm) 90 45 25 14

MPU Gate Length (nm) 32 18 10 6

2005 edition Toshiba 04

Device diversification

90nm: HP, LOP, LSTP

45nm: UTB SOI

32nm: Double gate

25 nm

Bulk MOSFET

FD SOI

UTB SOI

FinFET

HP(MPU)

LOP

LSTP

Stat.Sets

230 nm

Bulk MOSFET

Standard

SingleSet

Page 3: Grid Infrastructures for the Electronics Domain:

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Statistical variability

The simulationParadigm now

A 22 nm MOSFETIn production 2008

A 4.2 nm MOSFETIn production 2023

Page 4: Grid Infrastructures for the Electronics Domain:

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0.0 0.2 0.4 0.6 0.8 1.00.0

0.2

0.4

0.6

0.8

1.0

Vou

t2(V

)

Vout1

(V)Vout1 [V]

Vout2 [V]

Statistical variability Statistical variability

Page 5: Grid Infrastructures for the Electronics Domain:

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Deterministic variability Deterministic variability

Geometryvariation

Strainvariation

OPC

Strain

Syn

opsy

s

Page 6: Grid Infrastructures for the Electronics Domain:

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Delivering new resultsDelivering new results

CHARACTE-RISTICS

DE

VIC

ES

COMPACTDEVICE

PARAMETERS

CHARACTE-RISTICS

CIR

CU

ITS

CIRCUIT SUMULATORS

SYSTEM SIMULATORS

Hierarchical IC Simulation

Simulators

COMPACTCIRCUIT

PARAMETERS

Data Abstraction

CO

MP

AC

TC

IRC

UIT

MO

DE

LS

CO

MP

AC

TD

EV

ICE

MO

DE

LS

PA

RA

ME

TE

RE

XT

RA

CT

OR

PA

RA

ME

TE

RE

XT

RA

CT

OR

MEASUREMENTS

DEVICE SIMULATORS

PROCESS SIMULATORS

TC

AD

Simple conceptIntegrated Hierarchical

Statistical Design

Complex data and workflows

Data and Compute Intensive

Security Sensitive

Page 7: Grid Infrastructures for the Electronics Domain:

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Process Device Extract D Circuit Extract C

45nm STLP LP LP LP BSIM

LP PSPHP HP HP

HP IBM

LP LP LP IBM

LP PSPHP HP

HP BSIM

HP IBMService

Data

HP BSIM

ArtisanLP BSIM

CADENCEHP PSP

ArtisanLP BSIM

CADENCEHP PSP

Input F

LP

HP45nm IBM

Devicestructure

Devicecharacteristics

Compactmodels

Circuitcharacteristics

Se

rvic

es

Da

ta

Page 8: Grid Infrastructures for the Electronics Domain:

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NanoCMOS EEE-Infrastructure Components NanoCMOS EEE-Infrastructure Components

Optimised nanoCMOS Grid Infrastructure

Resource Mgt Framework

Data Mgt Framework

Advanced Security Framework

Workflow Mgt Framework

Security attributes definition

Policy Decision/Enforcement Points

Attribute Request/Release Policies

Identity Management

Trust FederationAccounting Components

Information Services

Meta-scheduling Services

Reservation/Allocation Services

Resource Broking Service

Data Access/Linkage/Integration

Replication/Movement

Metadata/Provenance

Storage/Curation Services

Domain Knowledge Capture/Pres.

Data Transformation

Workflow Definition

Robust Enactment

Dependency Mgt

Job submission/mgt

Computational Steering

Visualisation Services

Page 9: Grid Infrastructures for the Electronics Domain:

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Shibboleth ScenarioService provider

ShibFrontend

5. Pass authentication info and attributes to authZ function

Grid Portal

6. Make final AuthZ decision

Grid Application

Identity Provider

Home Institution

W.A.Y.F.

Federation

User1. User points browser at Grid

resource/portal

2. Shibboleth redirects

user to W.A.Y.F. service

3.User selects their

home institution

4. Home site authenticates user and

pushes attributes to the service provider

AuthNLDAP

LDAPAuthZ

?

Only accept

nanoCMOS partners?

Only send nanoCMOS attrs to nanoCMOS partners? Only

see/use what

allowed to?

uid

Page 10: Grid Infrastructures for the Electronics Domain:

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Page 11: Grid Infrastructures for the Electronics Domain:

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OMII SPAM-GP project: Scoped Attribute Management Portlet (SCAMP)

OMII SPAM-GP project: Scoped Attribute Management Portlet (SCAMP)

Page 13: Grid Infrastructures for the Electronics Domain:

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Page 14: Grid Infrastructures for the Electronics Domain:

www.nanocmos.ac.uk Basic Federated Shibboleth

ScenarioService provider

ShibFrontend

5. Pass authentication info and attributes to authZ function

Grid Portal

6. Make final AuthZ decision

Grid Application

Identity Provider

Home Institution

W.A.Y.F.

Federation

User1. User points browser at Grid

resource/portal

2. Shibboleth redirects

user to W.A.Y.F. service

3.User selects their

home institution

4. Home site authenticates user and

pushes attributes to the service provider

AuthNLDAP

LDAPAuthZ

?

Page 15: Grid Infrastructures for the Electronics Domain:

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PERMIS based Authorisation checks/decisions

Glasgow Education

VO policies

Glasgow Edinburgh

Grid BLAST

DataService

Nucleotide + ProteinSequence

DB

Grid-data Client

Grid BLASTService

EdinburghEducation

VO policies

LDAP LDAP

Implemented by Students

data input

Protein/nucleotide data returned based on student team role

Glasgow SoA using Glasgow DIS to issue Edin. roles

Edinburgh SoA using Glasgow DIS to issue Edin. roles

ACs created

for Edin. roles

• DyVOSE - Dynamic Privilege Management Infrastructure

Page 16: Grid Infrastructures for the Electronics Domain:

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Other Shibboleth ScenarioService provider

5. Pass authentication info and attributes to authZ function

Grid Portal

6. Make final AuthZ decision

Grid Application

Identity Provider

Home Institution

W.A.Y.F.

Federation

User1. User points browser at Grid

resource/portal

2. Shibboleth redirects

user to W.A.Y.F. service

3.User selects their

home institution

4. Home site authenticates user and

pushes attributes to the service provider

AuthNLDAP

LDAPAuthZ

VO wide

authZ

Page 17: Grid Infrastructures for the Electronics Domain:

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Test drive…

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The Future…?• Scaling system up to support much larger simulations and support real science – and generate IEEE Transactions papers in Electronics

• Managing larger data sets – capturing / annotating / storing / securely sharing … data across experiments

• Security hardening– Finer grained security on resources like NGS– Trust!

• Visualisation & Steering– OMII-RAVE

• Keep feeding requirements into OMII-UK – what works– what doesn’t work and needs fixing– Security aware workflows