Greg Yeric

© 2017

Graphene for future VLSI

Greg Yeric

greg.yeric@arm.com

Fellow

ARM Research

Greg Yeric

© 2017

Why did the semiconductor industry get so excited about graphene?

2

Greg Yeric

© 2017

The problem with planar MOSFETs

3

Gate

Source Drain

Substrate

One-dimensional field leakage

Greg Yeric

© 2017

0.01

0.10

1.00

10.00

1970 1980 1990 2000 2010 2020

Feat

ure

Siz

e, u

m

Year of Production

Technology Node, um

Physical Gate Length, um

Strain Era

3

2

1.5

0.81.0

0.50.35

0.250.18

0.090.13

0.0650.045

0.032

0.020

0.014

Gate length scaling hampered by leakage,

Reduces drive current scaling,

Make that up with channel strain to

increase mobility

Greg Yeric

© 2017

CMOS strain era

1

10

100

1000

10000

100000

1980 1985 1990 1995 2000 2005 2010 2015 2020

Conventional NMOS

Conventional PMOS

mobili

ty

Greg Yeric

© 2017

MOSFET Stress, if at macro scale

PMOS Stress

NMOS Stress

1 square inch chip:

Greg Yeric

© 2017

0.01

0.10

1.00

10.00

1970 1980 1990 2000 2010 2020

Feat

ure

Siz

e, u

m

Year of Production

Technology Node, um

Physical Gate Length, um

~16/14nm: We needed better electrostatics

FinFET:

Scale gate lengths,

Reduce leakage

3

2

1.5

0.81.0

0.50.35

0.250.18

0.090.13

0.0650.045

0.032

0.020

0.014

FinFET gate (blue) can exert

field from both left and right

Greg Yeric

© 2017

Gate All-Around Horizontal Nanowire

8

5nm 3nm

???

Greg Yeric

© 2017

Materials innovation: Graphene

Andre Geim Konstantin Novoselov

+ = 2010

Nobel Prize

9

2004:

Greg Yeric

© 2017

Graphene FET

Best possible field confinement

Greg Yeric

© 2017

Device Mobility Comparison

1

10

100

1000

10000

100000

1980 1985 1990 1995 2000 2005 2010 2015 2020

Conventional NMOS

Conventional PMOS

graphene N and P

mobili

ty

Greg Yeric

© 2017

Transistor scaling’s dirty secret: Parasitics

12

HS Wong, et al., SISPAD 2009

Greg Yeric

© 2017

Graphene FET

100x mobility

Best possible field confinement

Low aspect ratio = low parasitic cap

BUT: no band gap!

Greg Yeric

© 2017

No band gap: Not good for VLSI, maybe OK for AMS

http://beforeitsnews.com/science-and-technology/2011/04/ibm-researchers-

develop-a-155-ghz-graphene-transistor-using-a-diamond-like-carbon-

substrate-545003.html

http://www.popularmechanics.com/how-to/blog/ibm-builds-a-

graphene-circuit-16451798

Feb 2014:

IBM sent a text message

using graphene transistors

Greg Yeric

© 2017

Graphene bandgap?

Edge treatments

Doping

Hunt, et al. Science, June 2013, v340, n6139 Liu, et al., Nature Nanotechnology 8,

2013, pp 119-124

Yang, et al., GLSVLSI 2010,

pp 263-268

No band gap!

Greg Yeric

© 2017

Graphene timeline: 2004-

Andre Geim Konstantin Novoselov

16

+ = 2010

Nobel Prize2004:

Greg Yeric

© 2017

Representative “new material” timeline:

1984 GMR Effect discovered

1996 Spin Torque Transfer is proposed]

1996 Motorola begins MRAM research

1998 First Motorola MTJ

1999 Motorola develops 256Kb MRAM Test Chip

2002 Toggle patent granted to Motorola

2004 Motorola separates semiconductor business into Freescale Semiconductor

2006 Industry first MRAM (4Mb) product commercially available

2008 Freescale Semiconductor spins out MRAM business as Everspin Technologies

2010 Everspin qualifies industry first embedded MRAM

2010 Everspin releases 16Mb density

2012 Everspin produces 64Mb ST-MRAM on a 90 nm process

2016 Everspin announces 256Mb ST-MRAM to customers

17

~30 y

ear

s dis

cove

ry t

o p

roduct

Greg Yeric

© 2017

Graphene…

…has opened the Pandora’s box

of 2D materials

Hunt, et al. Science, June 2013, v340, n6139 Liu, et al., Nature Nanotechnology 8,

2013, pp 119-124

Yang, et al., GLSVLSI 2010,

pp 263-268

No band gap!

Greg Yeric

© 2017

Graphene for future VLSI

Greg Yeric

greg.yeric@arm.com

Fellow

ARM Research

and other 2-dimensional materials^

Greg Yeric

© 2017

MoS2 FET

Molybdenum Disulfide:

Actual band gap (1.9V)

These have been made and work

My favorite, because it’s a “MoS2FET”

Greg Yeric

© 2017

Molybdenum Disulfide (MoS2) in the wild:

21

Transistors: How far can they go?

22

Oct 2016

Greg Yeric

© 2017

1nm gate length transistor: looks like a transistor

23

Greg Yeric

© 2017

Technology node and transistor gate length

24

0.001

0.010

0.100

1.000

10.000

1970 1980 1990 2000 2010 2020 2030

Feat

ure

Siz

e, u

m

Year of Production

Technology Node, um

Physical Gate Length, um

Greg Yeric

© 2017

MoS2 microprocessor

25

http://spectrum.ieee.org/nanoclast/semiconductors/devices/the-most-complex-2d-microchip-yethttp://www.nature.com/articles/ncomms14948

Greg Yeric

© 2017

Example of the materials revolution: 2D materials

These are just the raw materials. Then you can dope, give them edge treatments, etc.

Z. Geng et al.,

“2D Electronics - Opportunities and Limitations”

ESSDERC 2016

26

*

Greg Yeric

© 2017

MoS2

Molybdenum, a metal

Sulfur, a chalcogen

oxygen, sulfur, selenium, and tellurium

chalco: “copper”

Berzelianite:

copper selenide

Covellite:

Copper Sulfide

Cupric Oxide

Weissite:

Copper Telluride

gen: born from:

Greg Yeric

© 2017

MoS2

Together, a chalcogenide

Greg Yeric

© 2017

MoS2

Specifically, a dichalcogenide

Greg Yeric

© 2017

MoS2

Most of the interesting metals for semiconductors are “transition metals”,

“….partially filled d sub-shell….”

Greg Yeric

© 2017

MoS2

So you have a TMD: Transition Metal Dichalcogenide

(lazy people say MX2)

X 2

Greg Yeric

© 2017

What can we do with more than one 2D layer?

32

2012 Device Research Conference

Greg Yeric

© 2017

What if you can’t make a good transistor?

33

Greg Yeric

© 2017

0 20 40 60 80 1000

5

10

15

20

25

30

Line width [nm]

[

-cm

]

Graphene Nanoscale Resistance Model

Primary advantages: reduced “size effect” impact and resistance

Graphene (Stanford 2D Model):

Rrough,edge = 2 nm

λMFP = 30 nm

ρlow = 1.5×10-6 Ω-cm [1]

ρmid = 4×10-6 Ω-cm [1]

Cu (FS-MS Model):

Rcu = 0.72

ρcu = 1.68 × 10-6 Ω-cm

ARcu = 2

pcu = 0.8

λMFP,cu = 39 nm

ρmid Graphene (MoO3)

ρlow Graphene (FeCl3)

Cu (Foundry)

[1] D. Kondo, N. Yokoyama, et al., “Sub-10-nm-wide Intercalated Multi-Layer Graphene Interconnects with Low

Resistivity,” 2014 IEEE International Interconnect Technology Conference/Materials for Advanced Metallization (IITC/MAM)

𝑅 =𝝆𝑙

𝐴

Greg Yeric

© 2017

While everyone is talking about 2D transistors…

35

16/14nm Cu wire

~32nm wide

AIST

IITC 2014

Greg Yeric

© 2017

What if you can’t make a good transistor?

Thermal conductivity 2x copper

Breakdown current 10x copper

Young’s modulus 8x copper

Electromigration JMAX 1000x copper

36

Greg Yeric

© 2017

But wait! There’s More (than Moore)

37

https://www.nwo.nl/en/research-and-

results/research-projects/i/87/11987.html

Greg Yeric

© 2017

But wait! There’s More (than Moore)

38

https://m.phys.org/news/2017-05-

valleytronics-advancement-law.html

Greg Yeric

© 2017

But wait! There’s More (than Moore)

39

Greg Yeric

© 2017

2D materials manufacturing: rapid progress

40

Greg Yeric

© 2017

2D materials manufacturing: rapid progress

41

https://futurism.com/scientists-have-turned-cooking-oil-into-a-material-200-times-stronger-than-steel/

Greg Yeric

© 2017

42

https://futurism.com/we-may-finally-have-a-way-of-mass-producing-graphene/

Greg Yeric

© 2017

Graphene is not selfish

43

https://m.phys.org/news/2017-

04-graphene-machine-cheap-

semiconductor-wafers.html

Greg Yeric

© 2017

Graphene is not selfish

44

http://spectrum.ieee.org/nanoclast/semicond

uctors/materials/graphene-makes-infinite-

copies-of-exotic-semiconductor-wafers

Greg Yeric

© 2017

Why VLSI might not matter to graphene’s success

45

Greg Yeric

© 2017

Other 2D material uses

46

https://m.phys.org/news/2017-05-graphane-efficient-

water-free-hydrogen-fuel.html

Greg Yeric

© 2017

Other 2D material uses

47

Greg Yeric

© 2017

Other 2D material uses

48

http://spectrum.ieee.org/nanoclast/semiconduct

ors/materials/twodimensional-materials-go-

ferromagnetic-creating-a-new-scientific-field

Greg Yeric

© 2017

Other 2D material uses

49

Greg Yeric

© 2017

Other 2D material uses

50

http://pubs.rsc.org/-/content/articlelanding/2017/ta/c7ta01857f#!divAbstract

Greg Yeric

© 2017

Other 2D material uses

51

http://www.materialstoday.com/computation-theory/news/topological-superconductivity-in-2d-materials/

Greg Yeric

© 2017

Other 2D material uses

52

Greg Yeric

© 2017

Other 2D material uses

53

Greg Yeric

© 2017

Other 2D material uses

54

https://link.springer.com/article/10.1007/s10854-017-6896-4

Greg Yeric

© 2017

Other 2D material uses

55

https://m.phys.org/news/2017-04-graphene-coating-

deformed.html

Greg Yeric

© 2017

Other 2D material uses

56

https://www.dogonews.com/2017/4/27/gra

phene-sieve-may-help-solve-the-worlds-

water-woes

Greg Yeric

© 2017

Why VLSI might not matter to graphene’s success

Age of articles cited in this section, in days:

57

8

28

97

101

20

15

5

5

13

44

142

14

10

27

29

31

12

Greg Yeric

© 2017

Summary

Graphene: Will it revolutionize VLSI? Probably not.

Graphene did open up a Pandora’s Box to a new class of materials (and physics).

There is a vast amount of research into other materials, including x-genes and TMDs.

We may see improved CMOS devices from this research, but there may also be new transistor

paradigms that could replace CMOS: Spin, valley.

Graphene and 2D materials could improve signal wiring, thermal problems, and even I/O (photonics,

plasmonics)

Graphene also recently shown to enable low-cost layer transfer

Beyond VLSI, graphene and other 2D materials will almost certainly change the world.

There is simply too much diverse research showing promise to not assume this.

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