Gate Driver ICs

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    Gate Driver ICs

    International Rectifier's MOSFET

    and IGBT gate driver ICs are the

    simplest, smallest and lowest cost

    solution to drive MOSFETs or IGBTs

    up to 1200V in applications up to12kW, and can save over 30% in

    part count in a 50% smaller PCB

    area compared to a discrete opto-

    coupler or transformer based

    solution. With the addition of few

    external components, IR gate

    driver ICs provide full driver

    capability with extremely fast

    switching speeds, designed-in

    ruggedness and low-power

    dissipation.

    Gate driver IC's generate thecurrent and voltage necessary toturn MOSFETs or IGBTs on and off

    from the logic output of a DSP,micro-controller or other logicdevice. The input is typically a 3.3volt logic-level signal. All IR gatedriver ICs are CMOS compatible,and most are TTL compatible.Output currents are up to 2A.

    Gate Driver ICs

    THE IR ADVANTAGE

    Dead-time as low as 500ns

    allows frequency up to 100khz

    Increases speed range and

    torque control of motor drives

    Enable rugged gate drive

    design

    Low power dissipation

    Compared with opto-coupler

    based solutions:

    30% fewer parts and 50%

    smaller PCB

    Doesn't need auxiliary power

    supply

    10X faster delay matching

    FEATURES AT A GLANCE

    600V and 1200V gate driver in a single IC for MOSFET

    and IGBTs

    Multiple Configurations

    Single high side

    Half-bridge

    3 phase inverter driver

    Up to +2.0/-2.0A output source/sink current enables fast

    switching

    Integrated protection and feedback functions

    Optional deadtime control

    Tolerant to negative voltage transient

    https://ec.irf.com/v6/en/US/adirect/ir?cmd=eneNavigation&N=0+4294837793https://ec.irf.com/v6/en/US/adirect/ir?cmd=eneNavigation&N=0+4294837793https://ec.irf.com/v6/en/US/adirect/ir?cmd=eneNavigation&N=0+4294837793
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    (50ns)

    No degradation of performance

    over time

    Shorter time to signal over-

    current 1.5s versus 6s)

    Reduced EMI and voltage

    spikes

    APPLICATIONS

    Motor Drive

    Lighting Ballast

    Switched Mode Power Supplies

    Automotive

    Plasma Display Panels

    Up to 50V/ns dV/dt immunity

    Optional soft turn-on

    Uses low cost bootstrap power supply

    CMOS and LSTTL input compatible

    IR Gate Driver ICs Simplify Design

    Driving a MOSFET or IGBT in the

    high side position of a half-bridge

    topology or 3 phase inverter leg

    offers the additional challenge that

    the gate voltage is referenced to

    the source rather than to ground.

    The source voltage is a floating

    point at up to the maximum bus

    voltage, or voltage rating of the

    MOSFET or IGBT, 600V and up for motor drive, lighting or SMPS applications. IR gate driver uses

    a patented level shifter technology for high voltage application and offers the only 1200V rating in

    the industry.

    These ICs simplify circuit designs by integrating extensive functionality. They use a low costbootstrap supply, while opto-coupler-based circuits typically require an auxiliary power supply. IRGate Driver ICs offer optional single input or dual input programmable deadtime control for lowside and high side drivers as well as for 3 phase drivers to provide design flexibility and allows to

    minimize cross-conduction. Unique 3-phase drivers allow driving a 3 phase inverter using a singleIC.

    IR Gate Driver ICs enable rugged driver designs

    IR Gate Driver ICs are specifically designed with motor drive applications in mind. The newestsoft-turn-on limits voltage and current spike and reduce EMI. In addition, they have up to 50V/nsdV/dt immunity and are tolerant to negative voltage transient. The under-voltage lock-outavailable for most drivers prevents shoot-through currents and device failures during power-up

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    and power-down without any additional circuitry. The output drivers feature a high pulse currentbuffer stage designed for minimum driver cross-conduction.

    Noise immunity is important for the high-side position which has a floating voltage and issusceptible to high noise levels, particularly in motor drive applications. Noise immunity ensuresthat the MOSFET or IGBT doesn't turn on accidentally. Noise immunity is obtained by using

    Schmitt-triggered input with pull-down. Additional noise immunity is obtained with separate logicand ground pins in some ICs, such as the 600V ICs in 14-pin packages.

    IR Gate Driver ICs enable fast switching speeds

    IR Gate Drive ICs have ten times better delay matching performance than opto-coupler-based

    solutions. Delay matching between the low-side and high-side driver is typically within 50ns(and as low as 10ns for some specialty products), allowing complete dead-time control forbetter speed range and torque control in motor drive applications. Fast switching also reducesswitching power losses and allows leveraging the full benefits of the fastest IGBTs available on themarket today for better torque control over a wider speed range.

    Application Notes:

    AN-978:HV Floating MOS-Gate Driver ICs

    AN-985:Six Output 600V MGDs Simplify 3-Phase Motor Drives

    Design Notes:

    DN500:Short Circuit Protection for Power Inverters

    DN501:Accurate Current Sensing in High Voltage Motor Drives

    DN502:Short Circuit Protection for Three-Phase Power Inverters

    Design Tips:

    DT92-2:High Current Buffer for Control ICs

    DT04-4:Using Monolithic High Voltage Gate Drivers

    http://www.irf.com/technical-info/appnotes/an-978.pdfhttp://www.irf.com/technical-info/appnotes/an-978.pdfhttp://www.irf.com/technical-info/appnotes/an-985.pdfhttp://www.irf.com/technical-info/appnotes/an-985.pdfhttp://www.irf.com/technical-info/designnote/dn500.pdfhttp://www.irf.com/technical-info/designnote/dn500.pdfhttp://www.irf.com/technical-info/designnote/dn501.pdfhttp://www.irf.com/technical-info/designnote/dn501.pdfhttp://www.irf.com/technical-info/designnote/dn502.pdfhttp://www.irf.com/technical-info/designnote/dn502.pdfhttp://www.irf.com/technical-info/designtp/dt92-2.pdfhttp://www.irf.com/technical-info/designtp/dt92-2.pdfhttp://www.irf.com/technical-info/designtp/dt04-4.pdfhttp://www.irf.com/technical-info/designtp/dt04-4.pdfhttp://www.irf.com/technical-info/designtp/dt04-4.pdfhttp://www.irf.com/technical-info/designtp/dt92-2.pdfhttp://www.irf.com/technical-info/designnote/dn502.pdfhttp://www.irf.com/technical-info/designnote/dn501.pdfhttp://www.irf.com/technical-info/designnote/dn500.pdfhttp://www.irf.com/technical-info/appnotes/an-985.pdfhttp://www.irf.com/technical-info/appnotes/an-978.pdf