OMMICInnovating with III-V’s

02/04/20151

OMMIC CONFIDENTIAL 20151

GaN/Si MMIC processfor mmW applications

Marc Rocchi

OMMICInnovating with III-V’s

02/04/20152

OMMIC CONFIDENTIAL 20152

OMMIC profile and strategy100nm GaN MMIC processesDesign kit and Foundry serviceConclusions

OMMICInnovating with III-V’s

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OMMIC CONFIDENTIAL 20153

OMMIC, Paris, France

OMMIC : French & independent III/V MMIC foundry

Founded by Philips Semiconductors

OMMICInnovating with III-V’s

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Strategy

•Offer High added value , Unique III/V MMIC solutions to complement Si solutions up to 400GHz for the followin gprofessional markets :

Aviation Cellular Infrastructure SpaceDefenceSecurityAutomotiveOptical fiberInstrumentationRadio astronomy

•Offer foundry services based on long term partnership

OMMICInnovating with III-V’s

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SubstrateSupply

Epitaxy IC Fab Back-End SystemEndUser

Value chain and FAB+ services

• Epitaxial growth• Process development• Custom MMIC design• Foundry service and MPW• MMIC Production • Packaging • Modules with MC2 • HiRel Test & Qualification

OMMICInnovating with III-V’s

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ft (GHz)0

5

10

15

20

25

30

35

20 50 100 200 500

Vbg

d(

V)

D007IH

D01PHD01MH

D01GH

D004IH

40

D006GH

Silicon

GaNHEMT/Si( C )

P(M)HEMT/GaAs

Process Roadmaps

D004GH

OMMICInnovating with III-V’s

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D01GH

100nm GaN/Si processFor mmW MMICs

OMMICInnovating with III-V’s

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GaN processes and applications

Power electronics : Replacement of SI solutions Si to improve the DC effi ciencyof DC power converters

Switching Transistors

Schottky Diodes

RF Transistors and MMICs0.5µm and 0.25µm HEMTs to replace high power LDMOS ( > 100W)

100nm et 60nm GaN HEMTs to replace GaAs PHEMTs thanks to higher breakdown voltage and even better NF and gain :

OMMICInnovating with III-V’s

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Power density/process

Pow

er D

ensi

ty(W

/mm

)

Ft (h21 cutoff), GHz

ED02AH180 nm

E/D

0.5

1.0

4.0

D01PH135 nm/100nm

D01MH120 nm

D025PHS250 nm

50 100 200150

D006GH60 nmGaN

300250

DH05IB0.5µmD-HBT

DH15IB1.5µmD-HBT

DH05IB0.5µmD-HBT

DH15IB1.5µmD-HBT

D01GH100nmGaN

OMMICInnovating with III-V’s

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OMMIC CONFIDENTIAL 201510

pad FET

airbridge

metal R C ox C viaR

D01GH : MMIC « PROCESS FLOW «

AlGaN/GaN/Si

OMMICInnovating with III-V’s

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Lg = 100 nm

0

100

200

300

400

500

600

700

800

900

0 5 10 15 20 25 30

Vds (V)

Id

(m

A/m

m)

Vgs = +0.2 V

0 V

- 0.2 V

- 0.4 V

- 0.6 V

- 0.8 V

- 1.0 V

- 1.2 V

- 1.4V

- 1.6 V- 1.8 V

D01GH : I/V curves

Gmmax = 650 mS/mm; Ron =0,8 ohms *mm

OMMICInnovating with III-V’s

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Pulsed IV curves

Pulsed I-V : 1µs pulses, FET 2x20 µm, Lg = 100 nm

0

200

400

600

800

1000

1200

0 2 4 6 8 10 12 14 16 18 20

Vds (V)

Ids

(mA/m

m)

Vgsr 0V Vgdr 0VVgsr -2V Vdsr 0VVgsr -2V Vdsr 5VVgsr -2V Vdsr 10V

Vgs = +0.6 V

Vgs = -0.6 V

Vgs = 0 V

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D01GH_trans 4x50µm _Vds 12V

Vds=12V Vgs sweep: -2 to -0,5V by step: 0,25V

13

OMMIC CONFIDENTIAL 2015

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D01GH_trans 4x50µm _Vds 5V

Vds=5V Vgs sweep: -1,5 to -0,25V by step 0,25V

14

OMMIC CONFIDENTIAL 2015

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Loadpull results at 24GHz

2*50µm12V3.5W/mm17dB gain24GHz46%PAECW

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D01GH mini power bars at 30GHz

OutPut Power vs Size @ 30GHz

31.6

31.8

32

32.2

32.4

32.6

32.8

33

33.2

0 0.2 0.4 0.6 0.8 1

Size (m m )

Po

ut

(dB

m)

0

500

1000

1500

2000

2500

3000

3500

4000

4500

Po

ut

(mW

/mm

)

Pout (dBm) Pout (mW/mm)

8x50µm 8x70µm 8x100µm

G-G 16µm

G-G 30µm

G-G 35µm

G-G 25µm

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Measured NF min and associated gain

Evolution de Gdisp

0

5

10

15

20

25

0 5 10 15 20 25 30 35 40

Freq(GHz)

Gd

isp

(dB

)

Vd=5V,Vg=-1V , ID=356mA/mm

Vd=5V,Vg=-1.2V , ID=211mA/mm

Vd=7.5V,Vg=-1.2V , ID=288mA/mm

4*50µm , 40GHz , 5V, 42mA, NF =1, 54 dB, 8dB Asssociated gain

Evolution de NFMIN

0

0,2

0,4

0,6

0,8

1

1,2

1,4

1,6

1,8

0 5 10 15 20 25 30 35 40

Freq(GHz)

NF

MIN

(dB

)

Vd=5V,Vg=-1.2V ,

ID=211mA/mm

OMMIC CONFIDENTIAL 2015

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Measured NF min and associated gain at 40GHz

8 dB

1.54 dB

0,70

1,2

42

5V

D01GH

( 100nm

GaN/Si HEMT)

12,4dB

1,13 dB

0,7

0,8

30mA

1V

D01MH

( 120nm

GaAs MHEMT)

0,65Rg( Ohm)

1.72 dBNFmin

4.5 dBAssociated gain

1,0Rs( Ohm)

15Ids( mA)

3VVds ( Volt)

D01PH

( 135nm

GaAs PHEMT)

4*50µm

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DC « Step stress » results

IG( Vgs) ID( Vgs) Vth250C, 270C, 280C, 1000h ( no drift after burn-in)

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Idss ( 0V) = 650 mA/mm

Vt= - 1.6VGm max ext= 650 mS/mm

Ft= 115 GHz, Fmax =155 GHz @ up to Vds = 12 V

MSG( 2*50µm) = 14 dB @ 30 GHz

Vbgd min =30V, typical = 40V ( Vds max= 25V)

Vdd =12V

Psat> 3.5 W/mm at 24 GHz ( Vds =12V)

NFmin ( 30GHz) : 1.3 dB

D01GH :specifications and RF performances

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D01GH design kit

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Conclusions

• End of 2014, project,,OMMIC opened its GaN /Si foundry service based on the 100nm D01GH process up to 50GHz

• Customer foundry runs:• May 2015• June 2015• September 2015

• This process is a full replacement of D01PH