Functional UPW application for nano– process wafer … Al 2O3 Particle diameter > 0.5 µm Cleaning method > Wafer spin > Used with MS Functional UPW application for nano–process

Functional UPW application for nano–process wafer cleaning

Dec. 12th 2013ORGANO CORPORATION

ORGANO CORPORATION

ORGANO

Organo（Vietnam)Co.,Ltd

PT Lautan Organo Water


ORGANO GROUP – Leading company of water

ORGANO Group Network


Technologies of wide range of water treatment


Background to development and marketingof Functional water

1994 Newly developed as an electrolytic ionized water for cleaning processes in microelectronics industry

Rapid increases in silicon wafer and LCD glass substrate sizeShift to gas dissolution type (H2 water, O3 water)

1996 Patent application of H2 water process and apparatus →2002 Registered in Japan (registered overseas first)

1997 Delivery of large devices systems with a central supplysystem for cleaning LCDs (H2 and O3 water)

Increased use of Cu interconnect process

From 1999 Shipment of San-Kan-Oh H increasedFrom 2003 Started shipment of mass-produced devices that comply

with CE marking From 2004 Started shipment of mass-produced wafer cleaning

devices that comply with CE/SEMI

ORGANO CORPORATION

ORGANO


Types and applications of multi-functional water

ORGANO CORPORATION

CO２２２２

NH3 Water(low resistivity

water)

Limit increases in electrostatic charge during the rinsing process

H2 Water(reducing water)

Removal of particles

Prevent oxidation

O3 Water(oxidizing water)

Applying oxidizing film

Removal of organic compounds

N２２２２

Water(adjustment water for dissolved gas

concentration)

Optimize ultrasonic cleaning effects

ORGANO


Types and applications of multi-functional waterWater Quality 1 - Relationship between PH and ORP

ORGANO CORPORATION

ORGANO

0 2 4 6 8 1 0 1 2 1 4-1 .5

-1 .0

-0 .5

0

0 . 5

1 . 0

1 . 5

2 . 0

OR

P (

V v

s N

HE

)

pH

Ultrapure deaerated water

Oxidizing water

Reducing water

Urban water supply services (Sagamihara City)

Red

ucin

g

Oxi

dizi

ng

Acidic Alkaline

Acidic and Oxidizing Water(pH adjusting ozonated water

Dissolution and removal of metallic impurities

Removal of organic pollutant, improvements to wettability

Alkaline Reducing Water(pH adjustment hydrogen water)

Removal of particles, substitute for CO2 to prevent static buildup

Neutral Oxidizing Water (Ozonated Water)

Removal of organic pollutantImprovements to wettability

Neutral Reducing Water (Hydrogen Water)

Limit oxidation

Mildly Acidic and Oxidizing Water (CO2 Water)

Prevention of static buildup


Cleaning Effects of Multi-functional Water - H 2Water, N 2 Water

ORGANO CORPORATION

CO２２２２

Water(low resistivity

water)

Limit increases in charge during the rinsing process


Applying oxidizing film

Removal of organic compounds

N２２２２

Water(adjustment water for dissolved

gas concentration)




Limit oxidation

ORGANO

ORGANO CORPORATION


Cleaning Effects of Multi-functional Water - H2 Water, N2 WaterUse for removal of particles

Better understanding of particle adhesion conditions

2. Fixation

3. Adherence

1. Due to surface charge

+ +++++

++++- - - - - - - -

- Treated by chemical etching(such as DHF, APM)

- Treated by re-polishing

- - -

+ ++

+++

++++

++++

- - - -

Lift-off- -

----

----

- - - -

Prevent reattachment

- - - - - - -

ORGANO

ORGANO CORPORATION



ORGANO

0 2 4 6 8 1 0 1 2 1 4-1 .5

-1 .0

-0 .5

0

0 . 5

1 . 0

1 . 5

2 . 0

OR

P (

V v

s N

HE

)

pH

Ultrapure deaerated water

Oxidizing water

Reducing water

Urban water supply services (Sagamihara City)

Red

ucin

g

Oxi

dizi

ng

Acidic Alkaline

Alkaline Reducing Water(pH adjustment hydrogen water)

Removal of particles, substitute for CO2 to prevent static buildup

CO2 water

ORGANO CORPORATION

Par

ticle

rem

oval

rat

e (%

)

Deaerated water O2 Water N2 Water0

20

40

60

80

100

Dissolved gas types and particle removal effects

Same quantity of dissolved gas

H2 Water

95%

Substrate> Glass

Particles> Al2O3

Particle diameter> 0.5 µm

Cleaning method> Wafer spin> Used with MS



ORGANO

ORGANO CORPORATION

Par

ticle

rem

oval

rat

e (%

)

NH4OH Water0

20

40

60

80

100

Particle removal effects with dissolved H2

(pH 10)Alkaline H2 Water

(pH 10)

99.9%

Substrate> Glass

Particles> Al2O3

Particle diameter> 0.5 µm

Cleaning method> Wafer spin> Used with MS

Same pH



ORGANO

ORGANO CORPORATION

Dissolved gas types and particle removal effects (750kHz, Si3N4)

Substrate: 300φ Si wafer, Particles: Si３

N４

Particle diameter: > 0.06 µm, Cleaning method: batchNo. of particles before cleaning: 20,000 to 30,000Cleaning time: 5 min, Ultrasonic specifications: 750

kHz, 300 W

0000

20202020

40404040

60606060

80808080

100100100100

0000 0.50.50.50.5 1.01.01.01.0 1.51.51.51.5 2.02.02.02.0 2.52.52.52.5

H2 [ppm]

Rem

oval

rat

e [%

]

pH 7

pH 10

0000 5555 10101010 15151515 20202020 25252525

N2 [ppm]

H2 Water N2 Water

Data source: KAIJO Corporation

0000

20202020

40404040

60606060

80808080

100100100100

Rem

oval

rat

e [%

]

H2 Saturation Concentration

1.6 mg/L @ 1 atm

N2 Saturation Concentration

18.5mg/L @ 1 atm



ORGANO

ORGANO CORPORATION

Ultrasonic frequency and particle removal effects

Substrate: 300φ Si wafer, Particles: Si３

N４

Particle diameter: > 0.06 µm, Cleaning method: batchNo. of particles before cleaning: 20,000 to 30,000Cleaning water quality: H2 water, Cleaning time: 5 min

0000

20202020

40404040

60606060

80808080

100100100100

0000 0.50.50.50.5 1.01.01.01.0 1.51.51.51.5 2.02.02.02.0 2.52.52.52.5

H2 [ppm]

Rem

oval

rat

e [%

]

pH 7

pH 10

750 kHz

Data source: KAIJO Corporation

0000

20202020

40404040

60606060

80808080

100100100100

0000 0.50.50.50.5 1111 1.51.51.51.5 2222 2.52.52.52.5

H2 [ppm]R

em

oval rate [%]

Rem

oval rate [%]

Rem

oval rate [%]

Rem

oval rate [%]

pH 7

pH 10

2MHz


1.6 mg/L @ 1 atm


1.6 mg/L @ 1 atm

Concentration of easy foaming

Concentration of easy foaming



ORGANO


Cleaning Effects of Multi-functional Water -CO2 and NH3 Water

ORGANO CORPORATION

CO２２２２

Water, NH3 water(low resistivity water)

Limit increases in charging effect during the rinsing process



Limit oxidation

N２２２２

Water(adjustment water for dissolved

gas concentration)



Removal of organic compounds Applying

oxidizing film

ORGANO

CO2 Water

-35

-30

-25

-20

-15

-10

-5

0

-100 -50 0 50 100

Sur

face

Vol

tage

(V

)

1500 rpm

Pure water

Vertical nozzle type

Processing time 60 sec


Cleaning Effects of Multi-functional Water - CO 2 WaterUsed to limit increases in charge

ORGANO CORPORATION

Uniform distribution of charging effect across the surface and avoid the effect

30 rpm

Cross-sectional image of surface potential

1500 rpm

-35

-30

-25

-20

-15

-10

-5

0

-100 -50 0 50 100

Surface V

oltage (V

)

-35

-30

-25

-20

-15

-10

-5

0

-100 -50 0 50 100

Surface V

oltage (V

)

3D Map

Sur

face

vol

tage

(V

)

Pure water

Sur

face

vol

tage

(V

)

ORGANO


Cleaning Effects of Multi-functional Water – NH3 WaterUsed to limit increases in charge and particle adhesion

ORGANO CORPORATION

Particle will adhere on the substrate in acidic CO2 water, but not in alkali NH3 water.

ORGANO

CO2 water NH3 water

0 2 4 6 8 1 0 1 2 1 4

Res

istiv

ity (

MΩ･c

m)

pH

Ultrapure water

Hydrogen water

0.00

17

18

19

0.05

0.10

0.15

0.20

0.25

0.30

0.35NH3 water (pH 9.0)

NH3 water (pH 9.5)

NH3 water (pH 10)CO２

Water(0.05 MΩ･cm)

CO２

Water(0.1 MΩ･cm)

CO２

Water(0.2 MΩ･cm)

Nitrogen water

ORGANO CORPORATION

ORGANOFunctional UPW application for nano–process wafer cleaning

Cleaning Effects of Multi-functional Water – NH3 WaterUsed to limit increases in charge and particle adhesion


Cleaning Effects of Multi-functional Water –Prevent oxidative corrosion in rinsing.

Environment that is in contact with rinsing water → AtmosphereGases that are related to corrosion → O2, CO2

ORGANO CORPORATION

Studies into effects of limiting Cu corrosionThe Cu wiring is presumed to be the corrosive element during the wafer cleaning process

N2O2

CO2

・ Establish measuring system for water quality

・ Study on quality change of rinsing water during wafer cleaning

N2

N2

N2

N2

O2

O2

O2 CO2

CO2

ORGANO

ORGANO CORPORATION

Studies into effects of limiting Cu corrosionEtching conditions under different cleaning water quality and cleaning room atmosphere

(DIW;7.5 ppm DO)

547 mV

(DIW;0.32 ppm DO)

441 mV

(CO2 water)750 mV

(H2 water)-550 mV

ORPAtmosphere

N2 Air

1820 nm21200 nm2

Chemical:30 sec,300 rpm↓

Rinse:600 sec,500 rpm↓Dry

PROCESSChemical:

30 sec,300 rpm↓

Rinse:600 sec.500 rpm↓Dry

3850 nm 2

8750 nm 2

7000 nm 2

2250 nm 21360 nm 2

Imai, et al., Proc. of SSDM, p.28, (2008).



ORGANO CORPORATION



ORGANO CORPORATION




Applications in the industry

ORGANO CORPORATION

SummaryMulti-functional water is ultrapure water with additional substances that are essential for cleaning

More effective and damage-free surface cleaning

For particle removal/prevent adhesion: H2 water, NH3water, and H2 + NH3 water.

To prevent (Cu) corrosion: Degassed water, H2 water, H2O2–free water, (N2 purge system), and combinations.

ORGANO

Documents

Functional UPW application for nano– process wafer … Al 2O3 Particle diameter > 0.5 µm Cleaning method > Wafer spin > Used with MS Functional UPW application for nano–process