From Ashcroft andMermin, Solid State Physics.

NEMS: TOWARD PHONON COUNTING: Quantum Limit of Heat Flow.

RoukesGroupCal TechTito

Biological Nanomotor

Gene chips, proteomics arrays.

Silicon wafer fabrication• Taken from www.egg.or.jp/MSIL/english/index-

e.html

Silicon wafer fabrication – slicing andpolishing

• Taken from www.egg.or.jp/MSIL/english/index-e.html

We

ek

1W

eek

2

N-type Si wafer <100>

Pre-diffusion cleanPad oxidation

Deposit LPCVD nitride

Spin photoresist

PR

Si N3 4

SiO2

O2

SiH ClNH

2 2

3

ECE 1233 PMOS Fabrication Sequence

Week

2W

eek

3

Expose PR with active area maskand develop

Reactive ion etch nitride layerStrip PR

Pre-diffusion cleanField oxidation

Strip nitride and pad oxideSacrificial oxidation

OH O

2

2

O2

CHFO

3

2

Plasma EtchersTaken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/

Week

3W

eek

4

Strip sac ox

Gate oxidation

Deposit LPCVD polysilicon

Poly

PR/etch gate maskStrip PR

O2

SiH4

SFO

6

2

LPCVD SystemsTaken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/

Week

5W

eek

6

Ion implant BF2+

Pre-diffusion cleanDrive-in/oxidation

PR/etch contact maskStrip PR

CleanSputter deposit Al/1%Si

Al/Si

P doped areas

OH O

2

2

Ar

Week

6

PR/etch metal maskStrip PRAnneal

Source

DrainGate (contact not shown)

IBM 7-Level Cu Metallization

Micromachining Ink Jet Nozzles

Microtechnology group, TU Berlin

Bulk micromachined cavities

• Anisotropic KOH etch(Upperleft)

• Isotropic plasma etch (upperright)

• Isotropic BrF3 etch withcompressive oxide still showing(lower right)

Taken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/

Surface Micromachining

Deposit sacrificial layer Pattern contacts

Deposit/pattern structural layer Etch sacrificial layer

Taken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/

source

source

source

gate

gate

gate

drain

drain

drain

NUMEM Microrelay Process

source

source

gate

gate

drain

drain

NUMEM Microrelay Process

Residual stress gradients

More tensile on top

More compressive on top

Just right! The bottom line: annealpoly between oxides with similarphosphorous content. ~1000C for~60 seconds is enough.

Taken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/

Residual stress gradients

A bad day at MCNC (1996).

Taken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/

1 1 µµmm

Scalloping and Footing issues of DRIE

Scalloped sidewall

Scalloped sidewall

Top wafer surfaceTop wafer surface

cathodecathode Top wafer surfaceTop wafer surface

anodeanode

Tip precursorsTip precursors

Scalloped sidewall

Scalloped sidewall

Top wafer surfaceTop wafer surface

cathodecathode Top wafer surfaceTop wafer surface

anodeanode

Tip precursorsTip precursors

<100 nm silicon nanowireover >10 micron gap

microgridFooting at the bottom of

device layerMilanovic et al, IEEE TED, Jan. 2001.

DRIE structures

• Increased capacitancefor actuation andsensing

• Low-stress structures– single-crystal Si only

structural material

• Highly stiff in verticaldirection– isolation of motion to

wafer plane– flat, robust structures

2DoF Electrostatic actuator

Thermal Actuator

Comb-drive Actuator

Taken from http://www-bsac.EECS.Berkeley.EDU/~pister/245/

Sub-Micron Stereo Lithography

Micro Electro Mechanical SystemsJan., 1998 Heidelberg, Germany

New Micro Stereo Lithography for Freely Movable 3D Micro Structure-Super IH Process with Submicron Resolution-

Koji Ikuta, Shoji Maruo, and Syunsuke KojimaDepartment of Micro System Engineering, school of Engineering, Nagoya University

Furocho, Chikusa-ku, Nagonya 464-01, JapanTel: +81 52 789 5024, Fax: +81 52 789 5027 E-mail: ikuta@mech.nagoya-u.ac.jp

Fig. 1 Schematic diagram of IH Process

Fig. 5 Process to make movable gear and shaft (a) conventional micro stereo lithography needs base layer (b) new super IH process needs no base

Fig. 6 Schematicdiagram of thesuper IH process

Sub-Micron Stereo Lithography

Micro Electro Mechanical SystemsJan., 1998 Heidelberg, Germany

New Micro Stereo Lithography for Freely Movable 3D Micro Structure-Super IH Process with Submicron Resolution-

Koji Ikuta, Shoji Maruo, and Syunsuke KojimaDepartment of Micro System Engineering, school of Engineering, Nagoya University

Furocho, Chikusa-ku, Nagonya 464-01, JapanTel: +81 52 789 5024, Fax: +81 52 789 5027 E-mail: ikuta@mech.nagoya-u.ac.jp

Fig. 10 Micro gear and shaft make of solidified polymer(b) side view of the gear of four teeth(d) side view of the gear of eight teeth