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MRF6S18140HR3 MRF6S18140HSR3
1RF Device DataFreescale Semiconductor
RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETs
Designed for N-CDMA base station applications with frequencies from 1805to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica‐tions. To be used in Class AB for PCN- PCS/cellular radio and WLL applica‐tions.
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,Pout = 29 Watts Avg., f = 1877.5 MHz, IS-95 CDMA (Pilot, Sync, Paging,Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.�Power Gain — 16 dB�Drain Efficiency — 27.5%�IM3 @ 2.5 MHz Offset — -36 dBc in 1.2288 MHz Bandwidth �ACPR @ 885 kHz Offset — -50.5 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CWOutput Power
Features• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use• Qualified Up to a Maximum of 32 VDD Operation• Integrated ESD Protection• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications• RoHS Compliant• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Storage Temperature Range Tstg -�65 to +150 °C
Case Operating Temperature TC 150 °C
Operating Junction Temperature (1,2) TJ 225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to CaseCase Temperature 80°C, 140 W CWCase Temperature 73°C, 29 W CW
RθJC0.310.35
°C/W
��1. Continuous use at maximum temperature will affect MTTF.��2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.��3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S18140HRev. 1.1, 12/2009
Freescale SemiconductorTechnical Data
MRF6S18140HR3MRF6S18140HSR3
1805-1880 MHz, 29 W AVG., 28 V2 x N-CDMA
LATERAL N-CHANNELRF POWER MOSFETs
CASE 465C-02, STYLE 1NI-880S
MRF6S18140HSR3
CASE 465B-03, STYLE 1NI-880
MRF6S18140HR3
© Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved.
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2RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 2 (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS — — 10 μAdc
Zero Gate Voltage Drain Leakage Current(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 μAdc
Gate-Source Leakage Current(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 μAdc
On Characteristics
Gate Threshold Voltage(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th) 1.2 2 2.7 Vdc
Gate Quiescent Voltage(VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
VGS(Q) 2 2.7 3.8 Vdc
Drain-Source On-Voltage(VGS = 10 Vdc, ID = 3 Adc)
VDS(on) 0.1 0.22 0.3 Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 2.2 — pF
Output Capacitance(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 685 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg., f1 = 1877.5 MHz, f2 =1880 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHzOffset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain Gps 15 16 18 dB
Drain Efficiency ηD 25.5 27.5 — %
Intermodulation Distortion IM3 — -36 -34.5 dBc
Adjacent Channel Power Ratio ACPR — -50.5 -48 dBc
Input Return Loss IRL — -10.5 — dB
��1. Part internally matched both on input and output.
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MRF6S18140HR3 MRF6S18140HSR3
3RF Device DataFreescale Semiconductor
Figure 1. MRF6S18140HR3(HSR3) Test Circuit Schematic
Z13 0.108″ x 1.070″ MicrostripZ14 0.960″ x 0.046″ MicrostripZ15 0.084″ x 0.046″ MicrostripZ16 0.996″ x 0.080″ MicrostripZ17 1.015″ x 0.080″ MicrostripZ18 0.099″ x 1.070″ MicrostripZ19 0.516″ x 1.070″ MicrostripZ20 0.292″ x 0.288″ MicrostripZ21 0.198″ x 0.114″ MicrostripZ22 0.372″ x 0.080″ MicrostripZ23 1.181″ x 0.080″ MicrostripPCB DS Electronics GX0300, 0.030″, εr = 2.55
Z1 0.166″ x 0.082″ MicrostripZ2 0.250″ x 0.334″ MicrostripZ3 0.140″ x 0.340″ MicrostripZ4 0.092″ x 0.164″ MicrostripZ5 0.130″ x 0.234″ MicrostripZ6 0.109″ x 0.082″ MicrostripZ7 0.070″ x 0.082″ MicrostripZ8 0.350″ x 0.644″ MicrostripZ9 0.092″ x 0.420″ MicrostripZ10 0.720″ x 0.082″ MicrostripZ11 0.090″ x 0.485″ x 0.580″ TaperZ12 0.342″ x 1.070″ Microstrip
VBIAS
VSUPPLY
RFOUTPUT
RFINPUT
DUT
C4
R3
Z4 Z5 Z6 Z7
C1
Z8
R5Z16
Z13
Z19
Z9
Z20
C2
C10 C12 C13 C16
+
C6
Z21 Z22 Z23
B1
R1
C11 C14 C15
Z18
Z17Z12
Z14
Z15
Z11Z10Z1 Z2 Z3
C8
+
C5
R4
R6C3
B2
R2
C9
+
C7
Table 5. MRF6S18140HR3(HSR3) Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
B1, B2 47 Ω, 100 MHz Small Ferrite Beads, Surface Mount 2743019447 Fair-Rite
C1, C2 39 pF Chip Capacitors ATC700B390FT500XT ATC
C3 0.1 pF Chip Capacitor ATC100B0R1BT500XT ATC
C4, C5, C12, C13,C14, C15
10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
C6, C7, C10, C11 9.1 pF Chip Capacitors ATC100B9R1BT500XT ATC
C8, C9 47 μF, 50 V Electrolytic Capacitors EMVY500ADA470MF80G Nippon Chemi-Con
C16 470 μF, 63 V Electrolytic Capacitor EMVY630GTR471MMH0S Nippon Chemi-Con
R1, R2 12 Ω, 1/4 W Resistors CRCW120612R0FKEA Vishay
R3, R4 1.0 KΩ, 1/4 W Resistors CRCW12061001FKEA Vishay
R5, R6 560 KΩ, 1/4 W Chip Resistors CRCW12065602FKEA Vishay
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4RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
Figure 2. MRF6S18140HR3(HSR3) Test Circuit Component Layout
+
C8
R5
R1B1R3 C6
C4
C1
C9
R6
R4
B2 R2
C5 C3
C11
C14 C15
C2
C10 C12 C13
C16
CU
T O
UT
AR
EA
MRF6S18140H/HSRev. 1
+
C7
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MRF6S18140HR3 MRF6S18140HSR3
5RF Device DataFreescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPU
T R
ETU
RN
LO
SS (d
B)
IM3
(dBc
), AC
PR (d
Bc)
19201760
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 29 Watts Avg.
-20
0
-4
-8
-12
VDD = 28 Vdc, Pout = 29 W (Avg.)IDQ = 1200 mA, 2-Carrier N-CDMA2.5 MHz Carrier Spacing, 1.2288 MHzChannel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)
18801840180014.8
16.8
-54
30
29
28
26
-24
-30
-36
-42
η D, D
RAI
NEF
FIC
IEN
CY
(%)
ηD
Gps
, PO
WER
GAI
N (d
B)
16.6
16.4
16.2
16
15.8
15.6
15.4
15.2
15
1780 1820 1860 1900
27
-48 -16
IRL,
INPU
T R
ETU
RN
LO
SS (d
B)
IM3
(dBc
), AC
PR (d
Bc)
19201760
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 60 Watts Avg.
-20
0
-4
-8
-12
VDD = 28 Vdc, Pout = 60 W (Avg.)IDQ = 1200 mA, 2-Carrier N-CDMA2.5 MHz Carrier Spacing, 1.2288 MHzChannel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)
18801840180014.4
16.4
-42
42
41
40
38
-12
-18
-24
-30
η D, D
RAI
NEF
FIC
IEN
CY
(%)
ηD
Gps
, PO
WER
GAI
N (d
B)
16.2
16
15.8
15.6
15.4
15.2
15
14.8
14.6
1780 1820 1860 1900
39
-36 -16
Figure 5. Two-T one Power Gain versusOutput Power
10013
19
1
IDQ = 1800 mA
1500 mA
VDD = 28 Vdcf1 = 1838.75 MHz, f2 = 1841.25 MHzTwo-Tone Measurements, 2.5 MHz Tone Spacing
18
17
15
10 400
Pout, OUTPUT POWER (WATTS) PEP
Gps
, PO
WER
GAI
N (d
B)
14
16
900 mA
1200 mA
600 mA
Figure 6. Third Order Intermodulation Distortionversus Output Power
-1 0
1 100
-2 0
-3 0
-4 0
400-60
-5 0
VDD = 28 Vdcf1 = 1838.75 MHz, f2 = 1841.25 MHzTwo-Tone Measurements, 2.5 MHz Tone Spacing
10
Pout, OUTPUT POWER (WATTS) PEP
INTE
RM
OD
ULA
TIO
N D
ISTO
RTIO
N (d
Bc)
IMD
, TH
IRD
OR
DER
IDQ = 600 mA
1500 mA900 mA1200 mA
1800 mA
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6RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Productsversus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD
, IN
TER
MO
DU
LATI
ON
DIS
TORT
ION
(dBc
)
-70
-10
1 100
-40
-50
10
-30
-20
-60 7th Order
VDD = 28 Vdc, IDQ = 1200 mAf1 = 1838.75 MHz, f2 = 1841.25 MHzTwo-Tone Measurements
5th Order
3rd Order
Figure 8. Intermodulation Distortion Productsversus Tone Spacing
10
0
TWO-T ONE SPACING (MHz)
VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mATwo-Tone Measurements, (f1 + f2)/2 = Center Frequency of 1840 MHz
IM7-U
-3 0
-4 0
-5 0
1 100
IMD
, IN
TER
MO
DU
LATI
ON
DIS
TORT
ION
(dBc
)
Figure 9. Pulsed CW Output Power versusInput Power
44
60
33
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1200 mAPulsed CW, 12 μsec(on), 1% Duty Cyclef = 1840 MHz
58
56
54
52
4934 3635 3837 4139
Actual
Ideal
P1dB = 52.6 dBm (182.64 W)
59
57
53
55
40 4232
P out
, OU
TPU
T PO
WER
(dBm
)
P6dB = 53.90 dBm (245.47 W)
Figure 10. 2-Carrier N-CDMA ACPR, IM3, Power Gainand Drain Efficiency versus Output Power
0 -70
Pout, OUTPUT POWER (WATTS) CW
50 -20
25
-30
20
-35
15
-50
5 -65
1 10 100
-55
10
-30 �C
25�C
85�C
IM3
ηD
Gps
TC = -30�C
ACPR
η D, D
RAI
N E
FFIC
IEN
CY
(%),
Gps
, PO
WER
GAI
N (d
B)
IM3
(dBc
), AC
PR (d
Bc)
50
P3dB = 53.36 dBm (216.77 W)
400
IM7-LIM5-L
IM5-U IM3-L
IM3-U
-2 0
-1 0
43
51
30
35
40
45
-60
-45
-40
-2525�C
85�C
VDD = 28 Vdc, IDQ = 1200 mAf1 = 1838.75 MHz, f2 = 1841.25 MHz2-Carrier N-CDMA, 2.5 MHz CarrierSpacing, 1.2288 MHz ChannelBandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)
-6 0
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MRF6S18140HR3 MRF6S18140HSR3
7RF Device DataFreescale Semiconductor
TYPICAL CHARACTERISTICS
10012
10
66
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiencyversus CW Output Power
VDD = 28 VdcIDQ = 1200 mAf = 1840 MHz
TC = -30�C
25�C
10
18
17
16
15
14
55
44
33
22
11
η D, D
RAI
N EF
FIC
IEN
CY
(%)
Gps
ηD
Gps
, PO
WER
GAI
N (d
B)
13
400
85�C
-30 �C25�C
85�C
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
Gps
, PO
WER
GAI
N (d
B)
13
17
0 260
15
14
100 200
16
VDD = 24 V 28 V 32 V
IDQ = 1200 mAf = 1840 MHz
Figure 13. MTTF Factor versus Junction Temperature
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the deviceis operated at VDD = 28 Vdc, Pout = 29 W Avg., and ηD = 27.5%.
MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTFcalculators by product.
107
106
105
110 130 150 170 190
MTT
F (H
OU
RS)
210 230
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8RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
N-CDMA TEST SIGNAL
100.0001
100
0
PEAK-T O-A VERAGE (dB)
Figure 14. 2-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2 4 6 8
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHzBandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @0.01% Probability on CCDF.
PRO
BABI
LITY
(%)
f, FREQUENCY (MHz)
-100
0
Figure 15. 2-Carrier N-CDMA Spectrum
-1 0
-2 0
-3 0
-4 0
-5 0
-6 0
-7 0
-8 0
-9 0
-ACPR in 30 kHzIntegrated BW
+ACPR in 30 kHzIntegrated BW
-IM3 in1.2288 MHz
Integrated BW
+IM3 in1.2288 MHz
Integrated BW
1.2288 MHzChannel BW
61.5 4.530-1.5-3-4.5-6-7.5 7.5
(dB)
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MRF6S18140HR3 MRF6S18140HSR3
9RF Device DataFreescale Semiconductor
Zo = 10 ΩZload
f = 1920 MHzZsource
f = 1760 MHz
f = 1760 MHz
f = 1920 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg.
fMHz
Zsource�
Zload�
1760 1.454 - j6.703 1.344 - j2.479
1780 1.465 - j6.511 1.338 - j2.299
1800 1.467 - j6.336 1.333 - j2.129
1820 1.448 - j6.193 1.325 - j1.966
1840 1.440 - j6.049 1.308 - j1.801
1860 1.414 - j5.938 1.301 - j1.687
1880 1.377 - j5.827 1.303 - j1.550
1900 1.311 - j5.710 1.301 - j1.419
1920 1.231 - j5.583 1.289 - j1.303
Zsource = Test circuit impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Figure 16. Series Equivalent Source and Load Impedance
Z source Z load
InputMatchingNetwork
DeviceUnderTest
OutputMatchingNetwork
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10RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
PACKAGE DIMENSIONS
CASE 465B-03ISSUE DNI-880
MRF6S18140HR3
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.4. DELETED
DIM MIN MAX MIN MAXMILLIMETERSINCHES
A 1.335 1.345 33.91 34.16B 0.535 0.545 13.6 13.8C 0.147 0.200 3.73 5.08D 0.495 0.505 12.57 12.83E 0.035 0.045 0.89 1.14F 0.003 0.006 0.08 0.15G 1.100 BSC 27.94 BSCH 0.057 0.067 1.45 1.70K 0.170 0.210 4.32 5.33
N 0.871 0.889 19.30 22.60Q .118 .138 3.00 3.51R 0.515 0.525 13.10 13.30
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q2X
MAMbbb B MT
MAMbbb B MT
B
B(FLANGE)
SEATINGPLANE
MAMccc B MT
MAMbbb B MT
A A(FLANGE)
T
N (LID)
M (INSULATOR)
S
MAMaaa B MT
(INSULATOR)
R
MAMccc B MT
(LID)
S 0.515 0.525 13.10 13.30
M 0.872 0.888 22.15 22.55
aaa 0.007 REF 0.178 REFbbb 0.010 REF 0.254 REFccc 0.015 REF 0.381 REF
CASE 465C-02ISSUE DNI-880S
MRF6S18140HSR3
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAXMILLIMETERSINCHES
A 0.905 0.915 22.99 23.24B 0.535 0.545 13.60 13.80C 0.147 0.200 3.73 5.08D 0.495 0.505 12.57 12.83E 0.035 0.045 0.89 1.14F 0.003 0.006 0.08 0.15H 0.057 0.067 1.45 1.70K 0.170 0.210 4.32 5.33
N 0.871 0.889 19.30 22.60R 0.515 0.525 13.10 13.30
STYLE 1:PIN 1. DRAIN
2. GATE 3. SOURCE
1
SEATINGPLANE
2
D
K
C
E
H
F
MAMbbb B MT
B
B(FLANGE)
MAMccc B MT
MAMbbb B MT
A A(FLANGE)
T
N (LID)
M (INSULATOR)
MAMccc B MT
MAMaaa B MT
R (LID)
S (INSULATOR)S 0.515 0.525 13.10 13.30
M 0.872 0.888 22.15 22.55
bbb 0.010 REF 0.254 REFccc 0.015 REF 0.381 REF
aaa 0.007 REF 0.178 REF
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MRF6S18140HR3 MRF6S18140HSR3
11RF Device DataFreescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 Sept. 2006 • Initial Release of Data Sheet
1 Dec. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notificationnumber, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionalityis standard, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured inFunctional Test”, On Characteristics table, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant partnumbers, p. 3
• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamicrange, p. 6
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listedoperating characteristics and location of MTTF calculator for device, p. 7
1.1 Dec. 2009 • Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process ChangeNotification number, PCN13232, p. 1, 2
• Data sheet archived. Part no longer manufactured.
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12RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
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Document Number: MRF6S18140HRev. 1.1, 12/2009