FQP6N60

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2000 Fairchild Semiconductor International

April 2000

Rev. A, April 2000

F Q

P 6 N 6 0

QFETQFETQFETQFET TMFQP6N60600V N-Channel MOSFET

General Descriptio n These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply.

Features 6.2A, 600V, R DS(on) =1.5 @VGS =10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Absolute Maximum Ratings TC =25C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQP6N60 UnitsVDSS Drain-Source Voltage 600 VID Drain Current - Continuous (T C =25C) 6.2 A

- Continuous (T C =100C) 3.9 AIDM Drain Current - Pulsed (Note 1) 24.8 AVGSS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 440 mJIAR Avalanche Current (Note 1) 6.2 AEAR Repetitive Avalanche Energy (Note 1) 13 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (T C =25C) 130 W- Derate above 25C 1.04 W/C

T J , TSTG Operating and Storage Temperature Range -55 to +150 C

TLMaximum lead temperature for soldering purposes,1/8 from case for 5 seconds

300 C

Symbol Parameter Typ Max UnitsR J C Thermal Resistance, J unction-to-Case -- 0.96 C WRCS Thermal Resistance, Case-to-Sink 0.5 -- C WR J A Thermal Resistance, J unction-to-Ambient -- 62.5 C W

! "

!

!

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"

"

! "

!

!

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"

"

S

D

GTO-220

FQP Series

GSD

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(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)

Rev. A, April 2000

Electrical Characteristics TC =25C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L =21mH, I AS =6.2A, V DD =50V, R G =25 , Starting T J =25C3. I SD 6.2A, di/dt 200A/ s, V DD BVDSS, Starting T J =25C4. Pulse Test : Pulse width 300 s, Duty cycle 2%5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristi csBVDSS Drain-Source Breakdown Voltage VGS =0 V, I D =250 A 600 -- -- VBVDSS/ T J

Breakdown Voltage TemperatureCoefficient

ID =250 A, Referenced to 25C -- 0.53 -- V/C

IDSSZero Gate Voltage Drain Current

VDS =600 V, V GS =0 V -- -- 10 AVDS =480 V, T C =125C -- -- 100 A

IGSSF Gate-Body Leakage Current, Forward VGS =30 V, V DS =0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS =-30 V, V DS =0 V -- -- -100 nA

On Characteristic sVGS(th) Gate Threshold Voltage VDS =V GS , ID =250 A 3.0 -- 5.0 VRDS(on) Static Drain-Source

On-Resistance

VGS =10 V, I D =3.1 A -- 1.2 1.5

gFS Forward Transconductance VDS =50 V, I D =3.1 A -- 6.0 -- S

Dynamic Characteristic sCiss Input Capacitance VDS =25 V, V GS =0 V,

f =1.0 MHz

-- 770 1000 pFCoss Output Capacitance -- 95 120 pFCrss Reverse Transfer Capacitance -- 10 13 pF

Switching Characteristicstd(on) Turn-On Delay Time VDD =300 V, I D =6.2 A,

RG =25

-- 20 50 nstr Turn-On Rise Time -- 70 150 nstd(off) Turn-Off Delay Time -- 40 90 nstf Turn-Off Fall Time -- 45 100 nsQg Total Gate Charge VDS =480 V, I D =6.2 A,

VGS =10 V

-- 20 25 nCQgs Gate-Source Charge -- 4.9 -- nCQgd Gate-Drain Charge -- 9.4 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 6.2 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24.8 AVSD Drain-Source Diode Forward Voltage VGS =0 V, I S =6.2 A -- -- 1.4 Vtrr Reverse Recovery Time VGS =0 V, I S =6.2 A,

dIF / dt =100 A/ s-- 290 -- ns

Qrr Reverse Recovery Charge -- 2.35 -- C

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0 3 6 9 12 15 18 210

2

4

6

8

10

12

VDS =300VVDS =120V

VDS =480V

Note : I D =6.2A

V G S , G

a t e -

S o u r c e

V o l t a g e

[ V ]

QG, Total Gate Charge [nC]10 -1 100 10 10

200

400

600

800

1000

1200

1400Ciss =Cgs +Cgd(Cds =shorted)Coss =Cds +CgdCrss =Cgd

Notes :1. VGS =0V2. f =1MHz

Crss

Coss

Ciss

C a p a c i t a n c e

[ p F ]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.410 -1

100

101

25150

Notes :

1. V GS =0V2. 250 s PulseTest

I D R , R

e v e r s e

D r a i n

C u r r e n t

[ A ]

VSD , Source-Drain Voltage [V]

0 2 4 6 8 10 12 14 160

1

2

3

4

5

VGS =20V

VGS =10V

Note : T J =25

R D S ( O N )

[ ] ,

D r a i n -

S o u r c e

O n -

R e s

i s t a n c e

ID, Drain Current [A]

2 4 6 8 1010

-1

10 0

10 1

Notes :1. VDS =50V2. 250 s Pulse Test

-55

150

25

I D , D

r a i n C u r r e n t

[ A ]

VGS , Gate-Source Voltage [V]10 -1 10 0 10 1

10 -1

10 0

10 1

Notes :1. 250 s Pulse Test2. TC =25

VGS Top : 15V

10V8.0V7.0V6.5V6.0V

Bottom : 5.5V

I D , D


[ A ]

VDS , Drain-Source Voltage [V]

Typical Characteristics

Fi gur e 5. Cap ac it anc e Char ac ter is ti cs Figu re 6. Gate Ch ar ge Char ac ter is ti cs

Figure 3. On-Resistance Variation vs.Drain Curr ent and Gate Voltage

Figure 4. Body Diode Forward VoltageVariation vs. Source Current

and Temperatur e

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

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10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1

10 -2

10 -1

10 0

Note s :1. Z J C(t) = 0.96 / W M a x .2. Duty Fa ctor, D=t 1 /t 23. T J M - T C = P DM * Z J C(t)

s ingle pulse

D=0.5

0.02

0. 2

0.05

0. 1

0.01

Z

J C ( t

) , T h e r m a

l R e s p o n s e

t 1 , S q u a r e W a v e P u l s e D u r a ti o n [s e c ]

25 50 75 100 125 1500

1

2

3

4

5

6

7

I D , D


[ A ]

TC, Case Temperature [ ]10 0 101 102 10 3

10-1

100

101

102

DC

10 ms

1 ms

100 s

Operation in This Areais Limited by R DS(on)

Notes :

1. T C =25oC

2. T J =150oC

3. Single Pulse

I D , D


[ A ]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :1. V GS =10V2. I D =3.1A

R D S ( O N ) , (

N o r m a l

i z e d )

D r a i n -

S o u r c e

O n -

R e s i s

t a n c e

T J, J unction Temperature [oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes :1. VGS=0V2. I D=250 A

B V D S S , (

N o r m a l

i z e d )

D r a i n - S

o u r c e

B r e a

k d o w n

V o l t a g e

T J, J unction Temperature [oC]

Typical Characteristics (Continued)

Figure 9. Maxim um Safe Operating Area Figure 10. Maximum Drai n Currentvs. Case Temperature

Figur e 7. Breakdow n Voltage Variationvs. Temperatur e

Figure 8. On-Resistance Variatio nvs. Temperatur e

Figur e 11. Transi ent Thermal Respons e Curve

t1

P DM

t2

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Gate Charge Test Cir cuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductiv e Switching Test Circuit & Waveforms

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Typeas DUT

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

EAS = L I AS2----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L I AS2----21EAS = L I AS2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Typeas DUT

VGS dv/dt controlled by R GI SD controlled by pulse period

VDD

LI SD

10VV

GS( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

DriverRG

Same Typeas DUT

VGS dv/dt controlled by R GI SD controlled by pulse period

VDD

LLI SD

10VV

GS( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width


D =

Gate Pulse Width


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Package Dimension s

4.50 0.209.90 0.20

1.52 0.10

0.80 0.102.40 0.20

10.00 0.20

1.27 0.10

3.60 0.10

(8.70)

2 . 8

0 0

. 1 0

1 5

. 9 0 0

. 2 0

1 0

. 0 8 0

. 3 0

1 8

. 9 5 M A X

.

( 1 . 7

0 )

( 3 . 7

0 )

( 3 . 0

0 )

( 1 . 4

6 )

( 1 . 0

0 )

( 4 5

)

9 . 2

0 0

. 2 0

1 3

. 0 8 0 . 2 0

1 . 3

0 0

. 1 0

1.30 +0.10 0.05

0.50+0.10

0.052.54TYP

[2.54 0.20 ]2.54TYP

[2.54 0.20 ]

TO-220

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2000 Fairchild Semiconductor International Rev. A, J anuary 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

ACExBottomlessCoolFETCROSSVOLTE2CMOSFACTFACT Quiet SeriesFAST

FASTrGTO

HiSeCISOPLANARMICROWIREPOPPowerTrench

QFETQSQuiet SeriesSuperSOT-3SuperSOT-6

SuperSOT-8SyncFET

TinyLogicUHCVCX

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORINTERNATIONAL.

As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected to

result in significant injury to the user.2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definitio n of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or InDesign

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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FQP6N60