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onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

Thermal Characteristics

©2000 Semiconductor Components Industries, LLC. September-2017,Rev.3

Publication Order Number:FQB47P06TM-AM002/D

FQB

47P06 — P-C

hannel QFET

® MO

SFET

FQB47P06P-Channel QFET® MOSFET-60 V, -47 A, 26 mΩ

DescriptionThis P-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features• -47 A, -60 V, RDS(on) = 26 mΩ (Max.) @ VGS = .10 V,

ID = -23.5 A

• Low Gate Charge (Typ. 84 nC)

• Low Crss (Typ. 320 pF)

• 100% Avalanche Tested

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter FQB47P06TM-AM002 Unit

RJC Thermal Resistance, Junction to Case, Max. 0.94oC/W

RJAThermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 40

GS

D

D2-PAK

G

S

D

• 175°C Maximum Junction Temperature Rating

Symbol Parameter FQB47P06TM-AM002 UnitVDSS Drain-Source Voltage -60 VID Drain Current - Continuous (TC = 25°C) -47 A

- Continuous (TC = 100°C) -33.2 AIDM Drain Current - Pulsed (Note 1) -188 AVGSS Gate-Source Voltage ± 25 VEAS Single Pulsed Avalanche Energy (Note 2) 820 mJIAR Avalanche Current (Note 1) -47 AEAR Repetitive Avalanche Energy (Note 1) 16 mJdv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/nsPD Power Dissipation (TA = 25°C) * 3.75 W

Power Dissipation (TC = 25°C) 160 W- Derate above 25°C 1.06 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

TLMaximum lead temperature for soldering, 1/8" from case for 5 seconds 300 °C

Package Marking and Ordering Information

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FQB

47P06 — P-C

hannel QFET

® MO

SFETPart Number Top Mark Package Reel Size Tape Width Quantity

FQB47P06FQB47P06TM-AM002 D2-PAK 330 mm 24 mm 800 unitsPacking Method

Tape and Reel

Electrical Characteristics TC = 25°C unless otherwise noted.

1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 0.43 mH, IAS = -47 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25°C.3. ISD ≤ -47 A, di/dt ≤ 300 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.4. Essentially independent of operating temperature.

Notes:

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -60 -- -- V∆BVDSS/∆TJ

Breakdown Voltage Temperature Coefficient

ID = -250 µA, Referenced to 25°C -- -0.06 -- V/°C

IDSS Zero Gate Voltage Drain CurrentVDS = -60 V, VGS = 0 V -- -- -1 µAVDS = -48 V, TC = 150°C -- -- -10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 VRDS(on) Static Drain-Source

On-ResistanceVGS = -10 V, ID = -23.5 A -- 0.021 0.026 Ω

gFS Forward Transconductance VDS = -30 V, ID = -23.5 A -- 21 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 2800 3600 pFCoss Output Capacitance -- 1300 1700 pFCrss Reverse Transfer Capacitance -- 320 420 pF

Switching Characteristics td(on) Turn-On Delay Time VDD = -30 V, ID = -23.5 A,

RG = 25 Ω

-- 50 110 nstr Turn-On Rise Time -- 450 910 nstd(off) Turn-Off Delay Time -- 100 210 nstf Turn-Off Fall Time -- 195 400 nsQg Total Gate Charge VDS = -48 V, ID = -47 A,

VGS = -10 V

-- 84 110 nCQgs Gate-Source Charge -- 18 -- nCQgd Gate-Drain Charge -- 44 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- -47 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -188 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -47 A -- -- -4.0 Vtrr Reverse Recovery Time VGS = 0 V, IS = -47 A,

dIF / dt = 100 A/µs -- 130 -- ns

Qrr Reverse Recovery Charge -- 0.55 -- µC

( N ote 4)

( N ote 4)

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FQB

47P06 — P-C

hannel QFET

® MO

SFETTypical Characteristics

0 01 20 30 40 05 60 70 80 900

2

4

6

8

10

12

VDS = -30V

VDS = -48V

* Note : ID = -47 A-VG

S, G

ate-

Sou

rce

Vol

tage

[V]

QG, Total Gate Charge [nC]10-1 0 1010

1000

2000

3000

4000

5000

6000

7000

8000Ciss = Cgs + Cgd (Cds = shorted)C

oss = C

ds + C

gd

Crss = Cgd

* Notes :1. VGS = 0 V2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nce

[pF]

10

VDS, Drain-Source Voltage [V]

0 0. 0 2. 0.4 0 6. 0.8 1.0 1 2. 1.4 1 6. 1.8 2 0. 2.2 2 4. 2.6 2.810-1

100

101

102

175oC * Notes :1. VGS = 0V2. 250µs Pulse Test

25oC

-I DR ,

Rev

erse

Dra

in C

urre

nt [

A]

-VSD , Source-Drain Voltage [V]0 100 200 300 400

0.00

0.02

0.04

0.06

0.08

0.10

* Note : TJ = 25oC

VGS = - 20V

VGS = - 10V

RD

S(on

) [Ω

],D

rain

-Sou

rce

On-

Res

ista

nce

-ID , Drain Current [A]

2 4 86 1010-1

100

101

102

175oC

25oC-55oC

* Notes : 1. VDS = -30V2. 250µs Pulse Test

-I D ,

Dra

in C

urre

nt [

A]

-VGS , Gate-Source Voltage [V]10-1 0 101

100

101

102

VGS

Top : - 15.0 V- 10.0 V- 8.0 V- 7.0 V- 6.0 V- 5.5 V- 5.0 V

Bottom : - 4.5 V

* Notes :1. 250µs Pulse Test2. TC = 25oC

-I D, D

rain

Cur

rent

[A]

10

-VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

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FQB

47P06 — P-C

hannel QFET

® MO

SFETTypical Characteristics (Continued)

Z JC

(t), T

herm

al R

espo

nse

[o C/W

]

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 0 -2

1 0 -1

1 0 0

* N o te s : 1 . Z

θ J C ( t) = 0 .9 4 o C /W M a x . 2 . D u ty F a c to r , D = t1 / t2

3 . T J M - T C = P D M * Zθ J C ( t )

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

25 50 75 100 125 150 1750

10

20

30

40

50

-I D, D

rain

Cur

rent

[A]

TC, Case Temperature [oC]100 101 102

10-1

100

101

102

103

DC

10 ms1 ms

100 µs

Operation in This Area is Limited by R DS(on)

* Notes :1. T

C = 25 oC

2. TJ = 175 oC3. Single Pulse

-I D, D

rain

Cur

rent

[A]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

* Notes :1. VGS = -10 V2. I

D = -23.5 A

RD

S(O

N),

(Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

* Notes :1. VGS = 0 V2. ID = -250µA

-BV

DS

S, (N

orm

aliz

ed)

Dra

in-S

ourc

e B

reak

dow

n V

olta

ge

TJ, Junction Temperature [oC]

-VDS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature

Figure 7. Breakdown Voltage Variationvs. Temperature

Figure 8. On-Resistance Variationvs. Temperature

t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ]

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

www.onsemi.com5

FQB

47P06 — P-C

hannel QFET

® MO

SFET Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VVDSDS

VVGSGS1010%%

90%90%

ttd(d(onon)) ttrr

tt onon tt ofofff

ttd(d(ofofff)) ttffVVDDDD

VVDSDS

RRLL

DUTDUT

RRGG

VVGSGS

ChChargargee

VVGSGS

QQgg

QQgsgs QQgdgdVVGSGS

DUDUTT

VVDSDS

300300nFnF

50K50KΩΩ

200n200nFF12V12V

SamSamee T Tyypepeas as DUDUTT

EEEAS AS AS ----=== 21212121------------ LLL ASASASIII

BVBVDSDSSS222 ----------------------------------------

BVBVDSDSSS - V- VDDDD

VVDDDD

VVDSDS

BVBVDSSDSS

t t pp

VVDDDD

IIASAS

VVDS DS (t)(t)

IID D (t(t))

TiTimmee

DUDUTT

RRGG

LLL

III DDD

t t pp

IG = const.

VVGSGS

VVGSGS

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FQB

47P06 — P-C

hannel QFET

® MO

SFET

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

••

DUTDUT

VVDSDS

++

__

DrivDrivererRRGG

ComCompplliimmentent ofof DUTDUT (N-(N-CChannelhannel))

VVGSGS •• ddvv//dtdt ccoontntrroolllleed d bbyy RRGG

IISDSD ccononttrrolollleded byby pupullsse e peperriiodod

VVDDDD

LLLII SDSD

1010VVVVGSGS

( ( DrivDriver er ))

II SDSD

( ( DUT DUT ))

VVDSDS

( ( DUT DUT ))

VVDDDDBoBodydy DDiiooddee

ForForwward ard VVololttagage e DrDropop

IIFMFM ,, BoBodydy DDiiodode e FFororwwaarrd d CCuurrrrenentt

VVSDSD

BoBodydy DDiiodode e RReevveerrssee CCuurrrrenentt

IIRMRM

BoBodydy DiDiodode e RReecovcoveerryy dvdv/d/dtt

didi//dtdt

D D D === ---------GateGateGate--------------------------- PPPulululsss------------------------e e e WWWiiiddd---------------ttthhh---GaGaGate te te PuPuPulllssseee PePePerrriiiododod

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FQB

47P06 — P-C

hannel QFET

® MO

SFET

Mechanical Dimensions

Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface MountPackage drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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