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FOCUS PRODUCT SOLUTIONS
Taiwan SemiconductorOctober 2016
AGENDA
• Introduction to Taiwan Semiconductor• New Product Focus Highlights
o High Voltage Switching Super Junction MOSFET (600 – 900V) High Voltage Planar MOSFET (450 – 1200V)
o Mid Voltage Switching Trench MOSFETs in advanced surface mount packages
o Efficient Power Rectification Bridge Rectifiers Trench Schottky Rectifiers TVS/ESD Protection
• General overview of Standard Products Portfolioo Switching Regulatorso Linear regulatorso Hall Effect Sensor Technologyo Photocouplers
BREA, CA
INDY, IN
HUNTSVILLE, AL
MANCHESTER
PARIS
MUNICH
TOYKOSEOUL
TAIPEI/HQ
TIANJIN
YANGXIN
SHANGHAI
I‐LANLI‐JE
HONG KONGSHENZHEN
SU ZHOU
BALTIMORE, MD
TSC WORLDWIDE ‐ GLOBAL SERVICE SINCE 1979
HEADQUARTERS
BRANCH OFFICES PRODUCTION SITES
TSC Worldwide 4 Production Sites in 2 Countries
Front‐end – 15,000 wafer/month Back‐end – 398kk/month (13 package types)
12 Sales Offices in 7 CountriesClose supply chain for short lead time, short lead time supportGood production planningCommodity device for logistic allocation
RoHS Compliant REACH regulation compliance Conflict Minerals Compliance
Industrial Bosch Danfoss Grundfos GE Rockwell Schneider Siemens
Power Supply & Consumer Bosch Siemens Braun Delta Electronics Dyson Flex Power LG Miele Panasonic Sharp Samsung Sony Whirlpool
Automotive (Behr‐)Hella Continental Delphi Kostal Lear Sumitomo Wabco
Lighting BAG Helvar Osram Panasonic Lighting Philips Lighting Sharp Lighting Tridonic Universal Lighting Vossloh‐Schwabe
APPLICATIONS, SPLIT & REFERENCE CUSTOMERSWorldwide 2016
Power Supply43%
Automotive12%
Lighting17%
Industrial9%
Others10%
Consumer 11%
AC DC
LOAD
BRIDGE RECTIFICATION
POWER FACTOR
CORRECTION
PRIMARYSWITCH AND
POWER REGULATION
SECONDARY POWER
REGULATION
SECONDARY SWITCHING
AC‐DCISOLATED DC‐DC
SWITCH AND POWER
REGULATION
NON‐ISOLATED DC‐DC
POWER STAGE
EFFICIENT POWER SOLUTIONS LINE‐TO‐LOAD
Quality Level:
Field fail rate goal: 0.02 PPM *Field fail rate actual: 0.028 PPM FIT goal: 2.5 /BhrFIT actual: 2.5 /Bhr
Before 200
8Before 200
8
2010 20132011
Continuo
us Im
prov
emen
t
* Field Failure: Automotive Market
2012 2013 2014 2015
Quality Level:
Field failure goal: 0.04 PPM *Field failure actual: 0.02 PPM *FIT goal: 6 /BhrFIT actual: 5.5 /Bhr Quality Level:
Field fail rate goal: 0.035 PPM *Field fail rate actual: 0.02 PPM *FIT goal: 5 /BhrFIT actual: 3.5 /Bhr
Quality Level:
Field fail rate goal: 0.03 PPM *Field fail rate actual: 0.029 PPM *FIT goal: 3 /BhrFIT actual: 2.5 /Bhr
TSC – AUTOMOTIVE QUALITY PERFORMANCE
PRODUCT PORTFOLIO ‐ OVERVIEW
Power Management ICs
• Amplifier & Comparator
• Analog IC• Supervisor and Reset IC
• Voltage and Current Controller
• Hall Effect Sensor• Omni‐Polar
• Unipolar
• Latch
• Linear
• Lighting IC• AC‐DC LED Lighting IC
• DC‐DC LED Lighting IC
• Linear LED Driver*
• Photocouplers
• Linear Voltage Regulator• Standard Linear Voltage Regulator
• Low Dropout Voltage Regulator
• Ultra Low Dropout Voltage Regulator
• Switching Regulator• DC/DC Converter (Integrated Switch)
• DC/DC Controller (External Switch)
• Voltage Reference
• ESD Protection• Diode
• Array
• MOSFET• Super Junction N‐channel
• N‐Channel *
• P‐Channel
• P‐Channel Integrated Schottky
• Complementary
• Thyristor
• DIAC
• Bipolar Transistor• NPN Bipolar Transistor
• PNP Bipolar Transistor
• Complex Digital Transistor
Discrete DevicesDiscrete Power and Switching Devices
• Bridge Rectifier• Standard Bridge*
• Fast Recovery Bridge*
• High Efficiency Recovery Bridge*
• Super Fast Recovery Bridge*
• Schottky Bridge*
• Diode & Rectifier• Switching Diode
• Switching Array
• Standard Rectifier *
• Fast Recovery *
• High Efficient Recovery*
• Ultra Fast Rectifier*
• Super Fast Recovery*
• Schottky Diode*
• Trench Schottky Diode*
• TVS *
• Zener Diode *
• Button/Auto Rectifier
Roadmap Focus
* Automotive AEC‐Q Available
MOSFET PRODUCTS
MOSFET PORTFOLIO
TSC Power MOSFETs support a broad range of power conversion applications
AC‐DC (off‐line)
Power Factor Correction Isolated DC‐DC Load switchingMotor Control
Primary Switch Secondary Switch
POWER
TRA
NSFORM
ER
HV Planar MOSFET500V ~ 600V
Super Junction MOSFET600V
LV Trench MOSFET30V ~ 40V
HV Planar MOSFET450V ~ 1200V MV Trench MOSFET
60V ~ 200VLV 20~40V
30V 1.5m40V 2.2m
Super Junction MOSFET600V ~ 800VMV Trench MOSFET100V ~ 150V
MV 60~150V60V 2.2m100V 8m150V 65m
Topo
logy
Prod
ucts
Application
High Voltage Power MOSFETs• Super Junction (Deep Trench) and Planar• Low RDS(ON)• Good di/dt for faster switching, and lower switching losses• 100% Avalanche tested and rated• Low output capacitance for higher frequency switching
Mid and Low Voltage Trench MOS• Advanced and patented trench technology• Low gate charge for reduced switching losses• Wide range of RDS(ON), VDS ratings, and advanced packages for
versatile application
Through-Hole
TO-220ITO-220TO-262TO251
SMD
D2PAKDPAK
SOT223SOT23SOT26
TSSOP8SO8
PDFN56PDFN56 Dual
PDFN56D Asym.PDFN33
TDFN22 Dual
MOSFET PACKAGES
PDFN3310.9mm2
PDFN5630mm2
PDFN56D Asym.30mm2
PDFN56 Dual30mm2
SO8
SOT23
TSSOP8
D2PAK
DPAK
SOT223SOT26
ITO‐220
TO‐262
TO‐220
TO‐251 TO‐251uS (Short‐Lead IPAK)
TO‐262S (Short‐Lead I2PAK)
PDFN1012Dual 120mm2
Coming Soon
TO‐247
TDFN22 Dual4mm2
TDFN224mm2
PDFN offers highest power density SM footprint
MSL1
NEW PACKAGE PLANNED (2017) ‐ PDFN1012 DUAL
Area: 120mm2
Height: 1.0mm
Min RDS(ON): 1.2mΩ x 2
RθJC = 0.3°C/W
*DTFP ratio: 34%
PDFN1012 • PDFN1012 Dual can replace 2 D2PAK or DPAK• Single Pad version also available that is footprint
compatible with MO‐299 (TO‐LL) Lower thermal resistance Lower package resistance Board space saving
Area: 304mm2
Height: 4.5mm
Min RDS(ON): 1.2mΩ
RθJC = 0.83°C/W
*DTFP ratio: 24%
D2PAK * 2
Area: 131mm2
Height: 2.3mm
Min RDS(ON): 2.7mΩ
RθJC = 1.0°C/W
*DTFP ratio: 14%
DPAK * 2
* DTFP : Die To Foot Print
PDFN1012
DPAK DPAKD2PAK D2PAK
PCB Footprint Requirement+28% +77%
Enhanced Solderability
HV MOSFET – SUPER JUNCTION(600V – 900V)
HIGH VOLTAGE SWITCHING WITH SUPER‐JUNCTION MOSFET
HIGH VOLTAGE N‐CHANNEL SUPER‐JUNCTION MOSFETApplications AC‐DC SMPS Power Factor Correction LLC Primary Side MOSFET Lighting Solar Inverters UPS
Features Fast Switching Low Gate Charge Small Packages Cost Efficient 100% UIS Tested 100% Rg Tested Fast Reverse Recovery
Planar MOSFET Super Junction
75%Improvement
R DS(ON)x Q
g
R DS(ON)x Area
FIGURE
OF MER
IT
ITO‐220
TO‐251 (IPAK)TO‐252 (DPAK)
43% Lower Qg34% Lower Qrr
Drain
Source
Gate
TO‐220
TO‐263 (D2PAK) TO‐247
1st GEN SJ‐MOSFETRSP @ 28 mΩ ∙ cm2
2nd GEN SJ‐MOSFETRSP @ 20 mΩ ∙ cm2
TO‐262 (I2PAK)
SUPER JUNCTION RDS(ON) RANGE
10
100
1000
600V 700V 800V 900V
R DS(ON)
(mΩ)
Package configurations can be readily accommodated within VDS/RDS range constraints
Min
Active PNRDS(ON) Range
Voltage RDS(ON)max
DPAK IPAK ITO/TO-220 D2/I2PAK TO-247
600V
41mΩ TSM60NB041PW75mΩ TSM60NB075CI/CZ TSM60NB075PW99mΩ TSM60NB099CI/CZ TSM60NB099PW
TSM60NB150CI/CZ190mΩ TSM60NB190CI/CZ TSM60NB190CM/CL260mΩ TSM60NB260CI/CZ380mΩ TSM60N(B)380CP TSM60N(B)380CH TSM60N(B)380CI/CZ600mΩ TSM60N(B)600CP TSM60N(B)600CH TSM60N(B)600CI750mΩ TSM60N750CP TSM60N750CH900mΩ TSM60N(B)900CP TSM60N(B)900CH TSM60N(B)900CI1.4Ω TSM60N(B)1R4CP TSM60N(B)1R4CH
650V
41mΩ TSM65NB041PW80mΩ TSM65NB80CI/CZ TSM65NB080PW110mΩ TSM65NB110CI/CZ TSM65NB110PW190mΩ TSM65NB190CI/CZ
700V
260mΩ TSM70NB260CI/CZ TSM70NB260CM/CL380mΩ TSM70N380CP TSM70N380CH TSM70N380CI/CZ600mΩ TSM70N600CP TSM70N600CH TSM70N600CI/CZ750mΩ TSM70N750CP TSM70N750CH900mΩ TSM70N900CP TSM70N900CH TSM70N(B)900CI/CZ1.4Ω TSM70N1R4CP TSM70N1R4CH
800V
90mΩ TSM80N090PW290Ω
400mΩ TSM80N400CI/CZ600mΩ TSM80N600CI/CZ950mΩ TSM80N950CP TSM80N950CH TSM80N950CI/CZ1.2Ω TSM80N1R2CP TSM80N1R2CH TSM80N1R2CI/CZ TSM80N1R2CM/CL
900V130mΩ TSM90N130PW500mΩ TSM90N500CI/CZ TSM90N500CM/CL
SJ‐MOSFET PRODUCT PORTFOLIOReleased Pre‐Release Samples Design
DUAL SUPER JUNCTION MOSFETS
Dual N‐Channel Power MOSFET600V, 33A, 150mΩ
Dual N‐Channel Power MOSFET600V, 29A, 190mΩ
− Coming soon (initial samples mid Q4)
HV MOSFET ‐ PLANAR
PLANAR VS. SUPER JUNCTION
MOSFET Die Size Cost VDSS RDS(ON) VGS(TH) Qg SwitchingSpeed
EMI Avalanche(EAS/IAS)
Reliabilty
HV Planar Bigger Higher Higher Higher Higher Higher Slower Lower Higher Higher
HV Superjunction Smaller Lower Lower Lower Lower Lower Faster Higher Lower Lower
HV PLANAR MOSFET PORTFOLIO
Voltage(VDS max)
RDS(ON) max(mΩ)
ITO-220/220S TO-220 TO-251/251S TO-252 SOT-223 TO-92 SOP-8
450V 4250 TSM1N45CW TSM1N45CT TSM1N45DCS
500V
440 TSM15N50CI TSM15N50CZ480 TSM13N50ACI TSM13N50ACZ850 TSM8N50CH TSM8N50CP1380 TSM5NC50CF1400 TSM6N50CH TSM6N50CP1500 TSM5NB50CI TSM5NC50CP2700 TSM4NC50CP
600V
750 TSM10NB60CI TSM10N60CZ1250 TSM7NC60CF TSM6N60CH TSM6N60CP1600 TSM6NB60CI TSM6NB60CZ2500 TSM4NB60CI TSM4NB60CZ TSM4NB60ECH TSM4NB60CP
4000‐5000 TSM2NB60CH TSM2NB60CP TSM2N60SCW10000 TSM1NB60CH TSM1NB60CP TSM1NB60CW TSM1NB60SCT
650V
900 TSM10NC65CF1350 TSM7NC65CI1450 TSM7N65ACI3370 TSM4NB65CI TSM4NB65CH TSM4NB65CP5000 TSM2NB65CH TSM2NB65CP
700V 900 TSM8N70CI3300 TSM4N70CI TSM4N70CH TSM4N70CP
800V
1050 TSM10N80CI TSM10N80CZ1400 TSM8N80CI TSM8N80CZ3000 TSM4N80CI TSM4N80CZ4200 TSM3N80CI TSM3N80CZ TSM3N80CH TSM3N80CP21600 TSM1N80CW
900V
1400 TSM9N90ECI TSM9N90ECZ1900 TSM7N90CI TSM7N90CZ4000 TSM4N90CI TSM4N90CZ TSM4NB90CH TSM4NB90CP5100 TSM3N90CI TSM3N90CZ TSM3N90CH TSM3N90CP
1000V3700 TSM5N100CI6000 TSM3N100CP8500 TSM2N100CH TSM2N100CP
1200V 5000 TSM2NB120CI9000 TSM1NB120CP
Released Pre‐Release Samples Design
MV MOSFET
MID VOLTAGE TRENCH MOSFET
Proprietary Trench Process for High Power Density Load Switching
Applications Motor Control SMPS Power Stage PWM Load Switching
Features High Power Density Improved VDS and Breakdown
Performance Low RDS(ON) Low Gate Charge High Thermal Conductivity Avalanche Rated 100% UIS and Rg Tested Fast Reverse Recovery Cost Efficient
30/40/60 Vds 700M Cell N-Ch
I-CompanyQgd
Qgs
Qg
Drain
Source
Gate
CGD
CGS
CDS
Rg
PDFN3310.9mm2
PDFN5630mm2
PDFN56 Dual30mm2
D2PAK
DPAKTSM024NA04LCR
Ciss = CGS + CGD
Coss = CDS + CGD
Crss = CGD.
40V, 2.4mΩ, PDFN56
LV‐MV N‐CH TRENCH MOS RDS(ON) RANGE
30V 40V 60V
R DS(ON)(max)
(mΩ)
Package configurations can be readily accommodated within VDS/RDS (die size) range constraints
TSC is motivated, and flexible to provide products specific to SBD requirements
Min
PDFN33
PDFN56PDFN56 Dual
D2PAKDPAK
TDFN22PDFN1012 DualComing Soon
Active PNRDS(ON) Range
BENCHMARK COMPARISONS
ParametersTest Condition
Id = 25A,Vgs = 10V
Id =250uA, Vgs = 0V
Rds(on)(Max) BVdss
mΩ VTSM024NA04LCR 1.88 44.4
I‐Company 1.91 43.2
40V/2~2.5mohm/PDFN56 Benchmark
BVdss Measurement
From measured data, 3% higher BVdss
Avalanche Energy Measurement
ParametersTest Condition
Id = 25A,Vgs = 10V
VDD=30V, RG=25Ω L=0.3mH
Rds(on)(Max)
IAS(MAX) EAS
mΩ A mJTSM024NA04LCR 1.68 76.5 877.8
I‐COmpany 1.91 66.0 653.4
From measured data, 30% higher avalanche energy
5Vin
14Vin
50A(Ton)
TA= 80
Ton
Gate pulse
Inrush Current Simulation
Turn on simultaneously to simulate surge current. ID = 50A, TA=80°C Measure case temperatures
TonQ6 Q7
I‐Company TSM024NA04LCR I‐Company TSM024NA04LCR100ms 96°C 93°C 98°C 94°C200ms 120°C 110°C 124°C 115°C300ms 140°C 125°C 144°C 129°C400ms >150°C 135°C >150°C 139°C
TSC LV‐MV N‐CHANNEL MOSFET PORTFOLIO
20V VDSS
Package Part numberRDS(ON) @ 4.5V Max.
(mΩ)
ID Max. (A)
Qg @ 4.5V(nC) VGS(th) Typ. (V)
SOP‐8TSM4806CS 20 28.0 12.3 0.60TSM4424CS 30 8.0 11.2 0.65TSM9926DCS 30 6.0 7.1 0.85
SOT‐23
TSM210N02CX 21 6.7 5.8 0.60TSM250N02CX 25 5.8 7.7 0.60TSM2312CX 33 4.9 11.2 0.65TSM2314CX 33 4.9 11.0 0.85TSM2302CX 65 2.8 5.4 0.95
SOT‐26 TSM3446CX6 33 5.3 8.8 0.87TDFN 2x2 TSM250N02DCQ 25 5.8 7.7 0.60
TSSOP‐8TSM6968DCA 22 6.5 15.0 0.80TSM6968SDCA 22 6.5 15.0 0.80TSM6866SDCA 30 6.0 5.0 0.85
TSC LV‐MV N‐CHANNEL MOSFET PORTFOLIO
30V Package Part numberRDS(ON) max
@ 10V(mΩ)
ID max.(A)
Qg @ 4.5V(nC)
VGS(th) Typ.(V)
PDFN33
TSM038N03PQ33 5.5 80 24.0 1.6TSM060N03PQ33 9.0 62 12.9 1.6TSM061NA03CV 8.1 66 9.6 1.9TSM085N03PQ33 13.0 52 7.2 1.6TSM180N03PQ33 28.0 25 4.1 1.6
PDFN56
TSM026NA03CR 3.3 168 21.0 1.7TSM033NA03CR 4.4 129 16.0 1.6TSM036N03PQ56 5.5 124 25.0 1.6TSM045NA03CR 6.3 108 9.0 2.0TSM055N03EPQ56 8.5 80 11.1 1.6TSM055N03PQ56 8.5 80 11.1 1.6TSM061NA03CR 8.0 88 9.3 1.8TSM080N03EPQ56 12.5 55 7.5 1.6TSM080N03PQ56 12.5 73 7.2 1.6TSM088NA03CR 11.4 61 6.3 1.9TSM120NA03CR 14.9 39 4.5 1.9
SOP‐8 TSM042N03CS 6.0 30 24.0 1.6TSM180N03CS 28.0 9 4.1 1.6
SOT‐223 TSM05N03CW 90.0 5
SOT‐23
TSM2306CX 57.0 4 5.5TSM240N03CX 34.0 7 4.1 1.4TSM320N03CX 32.0 5 8.4 0.6TSM3404CX 43.0 6 1.4
SOT‐26 TSM240N03CX6 34.0 7 4.1 1.4
TO‐252 (D‐PAK)
TSM040N03CP 6.0 90 24.0 1.6TSM060N03CP 9.0 70 11.1 1.6TSM060N03ECP 9 70 11.1 1.6TSM090N03CP 13.0 50 7.5 1.6TSM090N03ECP 14.0 50 7.7 1.6TSM500N03CP 80.0 13 7.0 1.7
TSC LV‐MV N‐CHANNEL MOSFET PORTFOLIO
60V
40V Package Part number RDS(ON) max @ 10V(mΩ) ID Max. (A) Qg (nC) @ 10V VGS(th) Typ. (V)
PDFN56
TSM020N04LCR 2.0 170 150 1.5
TSM024NA04LCR 2.4 170 67 1.7
TSM033NA04LCR 3.3 141 47 1.7
TSM070NA04LCR 7.0 91 24 1.6SOT‐23 TSM2318CX 45 3.9 10
Package Part number RDS(ON) max @ 10V(mΩ) ID Max. (A) Qg (nC) @ 10V VGS(th) Typ. (V)
ITO‐220 TSM230N06CI 23 28 28 1.8TSM340N06CI 34 19 17 1.7
PDFN56 TSM052N06PQ56 5 92 50 3.0TSM230N06PQ56 23 39 28 1.8
SOP‐8 TSM120N06LCS 12 23 37 1.7TSM4436CS 36 8
SOT‐223 TSM900N06CW 90 5 9 1.8SOT‐23 TSM2308CX 156 3
TSM2N7002KCX 2000 0.3 1.5TSM850N06CX 85 6 9 2.0
TO‐220 TSM100N06CZ 7 100 92 3.0TSM210N06CZ 3 210 160TSM230N06CZ 23 44 28 1.8TSM340N06CZ 34 31 17 1.7
TO‐251 (I‐PAK) TSM170N06CH 17 38 29 1.7TO‐251S (I‐PAK SL) TSM340N06CH 34 25 17 1.7
TSM900N06CH 90 11 9 1.8TO‐252 (D‐PAK) TSM10N06CP 65 10
TSM120N06LCP 12 70 37 1.7TSM170N06CP 17 38 29 1.7TSM230N06CP 23 34 28 1.8TSM340N06CP 34 25 17 1.7TSM60N06CP 7 62 81 3.0TSM900N06CP 90 11 9 1.8
TSC LV‐MV N‐CHANNEL MOSFET PORTFOLIO
75‐250V
VDS (V) Package Part number RDS(ON) @ 10V Max. (mΩ) ID Max. (A) Qg (nC) @ 10V
75 TO‐220TSM190N08CZ 4 190 160TSM80N08CZ 8 80 92
100
PDFN56 TSM120N10PQ56 12 58 145SOT‐223 TSM950N10CW 95 7 9SOT‐23 TSM2328CX 250 2
TO‐220TSM160N10CZ 6 160 154TSM85N10CZ 10 81 154
TO‐251S(I‐PAK SL)
TSM70N10CH 13 70 145TSM900N10CH 90 15 9
TO‐252(D‐PAK)
TSM35N10CP 37 32 34TSM70N10CP 13 70 145TSM900N10CP 90 15 9
150PDFN56 TSM650N15CR 65 24 36SOP‐8 TSM650N15CS 65 9 37
250TO‐251 (I‐PAK) TSM600N25ECH 600 8 8TO‐252 (D‐PAK) TSM600N25ECP 600 8 8
ASYMMETRIC DUAL N‐CHANNEL MOSFETS
Target Market:• Motherboard• Graphic Card• Notebook PC• Server• PoE
Target Application:• CPU_CORE• GPU_CORE• POL
Features:• Integrated HS/LS FETs• Board spec saving• Minimized switching loop• Good EMI• 100% Rg and UIS tested
Part Number Package Q1/ Q2
Vds (V) Vgs (V)
Rds10V (mohm)
max.
Rds4_5V (mohm)
max.
Qg4_5V (nC_typ)
Qgs (nC_typ)
Qgd (nC_typ)
Sample Schedule
MP Schdule Status
TSM5055DCR PDFN56DQ1 30 20 8.0 12 7 2.2 3.3
Q2 '16 Q3 '16 In Dev.Q2 30 20 3.6 5.5 24.0 4.2 13.0
PDFN56D
TSC LV‐MV P‐CHANNEL MOSFET PORTFOLIO
Part Number Configuration Package Vds(V)
VGS(V)
ID(A)
Rds10V(mohm)max.
Rds4_5V(mohm)max.
Qg10V(nC_typ.)
Qg4_5V(nC_typ.)
TSM150P03PQ33 P‐Channel PDFN33 ‐30 ±20 ‐30 15 30 29 14TSM085P03CV P‐Channel PDFN33 ‐30 ±20 ‐64 8.5 13.2 70 35TSM180P03CS P‐Channel SOP‐8 ‐30 ±20 ‐10 18 30 29 14TSM150P04LCS P‐Channel SOP‐8 ‐40 ±20 ‐16 15 21 47 23TSM480P06CP P‐Channel TO‐252 ‐60 ±20 ‐20 48 65 22 11TSM10P06CP P‐Channel TO‐252 ‐60 ±20 ‐10 170 220 6 3TSM680P06CP P‐Channel TO‐252 ‐60 ±20 ‐18 68 110 16 8
RECTIFIERS
RECTIFIER FAMILIES
• Wide range of performance, packaging, and cost options.
RECTIFIER FAMILY PARAMETRIC COMPARISON
Family IF(AVG) VRRM VF TrrMin (A) Max (A) Min (V) Max (V) Min (V) Max (V) Min (ns) Max (ns)
Schottky 1.0 60.0 20 200 0.39 1.05 NA NAUltra Fast 1.0 12.0 50 600 0.88 3.10 13 25Super Fast 1.0 20.0 50 1200 0.95 2.90 35 65High Efficient 1.0 4.0 50 1000 0.95 1.70 50 75Fast 0.5 3.0 50 1000 1.20 1.30 150 500Standard 1.0 6.0 50 1400 1.00 1.30 >500
Efficiency Cost
Std. DiodeSchottkyIF
VFVR
IR With Trench SchottkyTRR Loss in Standard
STANDARD RECTIFIER FAMILIES (SURFACE MOUNT)
PackageAverage Forward Rectified Current (IF(AV)) max.
0.5 A 0.8 A 1 A 1.2A 1.5 A 2 A 3 A 4 A 5 A 6 A 8 A 10 A 12 A 15 A 16 A
Micro SMA x x x
Sub SMA x x x x x
SOD‐123 x
SOD‐123FL x x x
SOD‐123HE x x
SOD‐123W x x x x x
SMAF x x x x x
DO‐214AC(SMA)
x x x x x x x x x
SMBF x
DO‐214AA(SMB)
x x x x x x x x x x x
TO‐277A(SMPC)
x x x x x
DO‐214AB(SMC)
x x x x x x x x x x x x x x
TO‐263AB(D²‐PAK)
x x x x x
Standard Rectifier (TRR >500ns)Fast Rectifier (TRR 150 ‐ 500ns)High Efficiency Rectifier (TRR 50 ‐ 80ns)Super Fast Rectifier (TRR 35 ‐ 65ns)Ultra Fast Rectifier (TRR 15 ‐ 50ns)
TRENCH SCHOTTKY
TRENCH SCHOTTKY FOR EFFICIENT POWER RECTIFICATION
TRENCH SCHOTTKY RECTIFIERS Extremely fast switching Reduced reverse recovery time (TRR). Higher temperature stability 100% avalanche tested and avalanche rated
Lower forward voltage drop (VF) Lower power dissipation (PD) Very low conduction losses
Trench Schottky StructurePlanar Schottky Structure
Std. DiodeSchottkyIF
VFVR
IR
TRENCH SCHOTTKY FOR IMPROVED POWER DENSITY
Standard
Trench Schottky
TRENCH SCHOTTKY RECTIFIERS Extremely fast switching Reduced reverse recovery time (TRR). Higher temperature stability
Lower forward voltage drop (VF) Lower power dissipation (PD) Very low conduction losses
TRENCH SCHOTTKY PRODUCT SPOTLIGHT
Part Series IF(AV) VRRMVF Typ
PackageD²Pak I²Pak ITO‐220 TO‐220 PDFN
5x6SMA SMPC SOD‐
123HE
SOD‐123W
TSSx3U series 3A 45‐60V .4‐.86V
TSSA5 series 5A 50‐150V .4‐.74V
TSx10 series 10A 45‐200V .37‐.84V
TSP15 series 15A 50‐120V .48‐.79V
TSx20 series 20A 45‐300V .43‐.89V
TSx30 series 30A 45‐200V .43‐.86V
TSx40 series 40A 45‐200V .49‐.8V
BRIDGE RECTIFIERS
STANDARD BRIDGE PRODUCTS
IF(avg) VF@IF TRR ABS MBS DBL/DBLS YBS KBP D3K GBL GBU KBJL TS4K TS6P GBPC GBPC‐W
0.8A 1V >500ns 200‐1000V
1A 1V >500ns 200‐1000V 50‐1000V
1.5A 1.1V >500ns 600‐1000V 50‐1400V
2A 1.1V >500ns 1000V 50‐1400V 600‐1000V 400‐1000V 600‐1000V 50‐1000V
3A 1.1V >500ns 600‐1000V 400‐1000V 600‐1000V
4A 1.1V >500ns 400‐1000V 600‐1000V 50‐1000V 50‐1000V 400‐800V
6A 1.1V >500ns 50‐1000V 600‐1000V 400‐800V 50‐1000V
8A 1.1V >500ns 50‐1000V 50‐1000V
10A 1.1V >500ns 50‐1000V 600‐1000V 400‐800V 50‐1000V
15A 1.1V >500ns 600‐800V 50‐1000V 50‐1000V 50‐1000V
20A 1.1V >500ns 50‐1000V
25A 1.1V >500ns 400‐1000V 50‐1000V 50‐1000V 50‐1000V
35A 1.1V >500ns 600‐1000V 50‐1000V 50‐1000V
40A 1.1V >500ns 600‐1000V 50‐1000V
50A >500ns 600‐1000V 50‐1000V
ACVP‐P
VPVRMS
Vrect
Main (VRMS)
VP(VRMS * 1.4 )
VP‐P(VP *2)
120V 170V 340V
240V 340V 680V
480V 672V 1344V
MSL1 SM Packages
LEADLESS SM YBS BRIDGE RECTIFIERSPackage Trend
GBP/D3K
YBS
DBL/DBLS
ABS
MBS
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
SMD type will be a trend for power design
Dimension : 7.3 x 6.6 x 1.4mm Compatible to :
Liteon : MSBL M.C.C: TBS
New design trend Target spec : 2.2A & 3.0A ≤65W Charger/Adapter/PD
FAST/EFFICIENT BRIDGE PRODUCTS
Family IF(avg) Range TRR ABS MBS DBL DBLS TMB TS4B
Fast0.8A 150ns 200V ‐
600V
1.5A ‐ 2A 300 ‐ 500ns 1000V 1000V
High Efficient
1A 50 ‐ 75ns 50V ‐1000V
50V ‐1000V
4A 50ns 400V
Schottky 2 ‐ 3A 40V ‐ 60V
Super Fast1A 35ns 200V ‐
600V
4A 35ns 50V ‐ 200V
TVS PRODUCTS
SMD TYPE TVS PORTFOLIO
Power rating
5.0KW
3.0KW
1.5KW
1.0KW
600W
400W P4SMAxxSMAJxx
SMA6Jxx
SMA
P6SMBJxxSMBJxx
1KSMBxx
SMB
1.5SMCxxSMCJxx
SMDJxx
SMC
TVSPBRxx
SMPC
*5.0SMDJxx
*Under development
Part No. PPK(W) PD(W) IFSM(A) VR(V)
5.0SMDJ xx 5000 6.5 300 10‐100
*SMA1KJxx
Target voltage : 24V, 27V, 30V, 33V, 36V
ESD PROTECTION
Key ESD protection product parameters
1000 300 100 30 20 13 11 5 1 0.25
0.01 0.1 1 10 25 100 500 1000 2500
CJ max (pF)
Zener structure
Zener + Integrated Rail‐to‐Rail clamping diodes
Rail‐to‐Rail clamping diodes
Audio
Video
RS232 RS485 USB2.0
IEEE1394
Ethernet
Speaker u’phone Handset
STB DVD Video I/O
Ser‐port KeyboardMouse
Network HUB Switch
LCDM/TV NB/MB DSC
Network HUB Switch
MB NB Bur‐ray DVD
USB3.0
HDMI
LCDM/TV STB Bur‐ray DVD
CJ : Junction capacitance (pF)
CJ is the intrinsic and unwanted capacitance of the ESD protection device, the higher the signal frequency or data rate, the lower CJ has to be to preserve signal integrity.
5000
Speed: Mbit/sec
10000
0.1
USB3.1 Application circuit
USB Host
USB3.1 Host
USB2.0 Host
RX
TX
+
‐ +
‐
+
‐
+
‐
USB Device
USB3.1 Host
USB2.0 Host
RX
TX
+
‐ +
‐
+
‐
+
‐
SS RX
SS TX
SS TX
SS RX
USB connector
SSTX+
SSTX‐
SSRX+
SSRX‐
D+
D‐
USB connector
SSTX+
SSTX‐
SSRX+
SSRX‐
D+
D‐
Part No. VR(V) IPP(A) CJ(pF) I/O MP
TESDH5V0AP 5 3 0.25 4 E.Q3/16’
Part No. VR(V) IPP(A) CJ(pF) I/O MP
TESDQ5V0SP 5 1 0.2 1 E.Q3/16’
LINEAR AND SWITCHING REGULATORS
LINEAR (LDO) VOLTAGE REGULATORS
Part # Vin
(Max)Iout(A)
Acc.(± %)
VDO
(Max)@ Iout
Adj.Vout
Fixed Output (V) Packages
1.2 1.5 1.8 2.5 3 3.3 5 8 9 12 15 24 DFN22 SOT23 SOT25 SOT89 SOP8 SOT223 DPAK D²PAK TO92 TO220
TS5204 20 0.08 3 0.3 TS5213 20 0.08 3 0.32 TS317 40 0.1 4 2 TS3480 30 0.1 2 0.95 TS78L03 30 0.1 4 2 TS78Lxx 35 0.1 4 2 TS2950 30 0.15 1.5 0.38 TS2951 30 0.15 1.5 0.38 TS4264 45 0.15 2 0.25 TS5205 20 0.15 2 0.17 TS9011 12 0.25 2 0.4 TS9015 7 0.3 2 0.3 TS2937 26 0.5 2 0.6 TS2938 26 0.5 2 0.5 TS78Mxx 35 0.5 2 2 TS9013 12 0.5 2 0.5 TS1117 15 1 2 1.3 TS2940 26 1 2 0.6 TS39104 20 1 2 0.4 TS78xx 35 1 4 2
TO‐220TO‐92D2PAKDPAKSOT223SOP8SOT89SOT23
SOT25DFN22
SELECTION GUIDE
• High efficiency low dropout performance
• Full current rating over temperature range
• Good ripple current rejection
FIXED NEGATIVE VOLTAGE LINEAR REGULATORS • Current limiting, thermal shutdown, and safe‐area compensation making them remarkably
rugged under most operating conditions.
• Compliments TS7800 series positive regulators for matched ± voltage supply
• With adequate heat sinking they can deliver output currents in excess of 1 ampere.
• No external components required• ‐35V Max input voltage
Part number Package Output Current (A)
Output Voltage (V)
TS7905CZ TO‐220 1 5TS7912CZ TO‐220 1 12TS79L05CT TO‐92 1 5TS79L05CY SOT‐89 1 5TS79L09CT TO‐92 1 9TS79M05CP TO‐252 (D‐PAK) 0.5 5TS79M05CZ TO‐220 0.5 5TS79M12CP TO‐252 (D‐PAK) 0.5 12
TO‐220
D‐PAK
TO‐92
APPLICATIONS• Double ended sensors• Audio amplifiers
SWITCHING REGULATORS
Part number Topology PackageSupply Voltage (VCC) Output
Current (ISW) Typ. (A)
Freq.(kHz) Vout (V) Synchronous
RectificationMin. (V) Max. (V)
TS2581CS Buck (Step‐down) SOP‐8 4.5 40 1 100 Adj.TS3410CX5 Buck (Step‐down) SOT‐25 2.5 6 1 1400 Adj. TS34063CS Buck (Step‐down) SOP‐8 3 40 1.5 100 Adj.TS1935BCX5 Boost (Step‐up) SOT‐25 2.7 5.5 1.9 1200 Adj.TS2596SCS Buck (Step‐down) SOP‐8 4.5 24 2 150 Adj.TS2596SCS50 Buck (Step‐down) SOP‐8 4.5 24 2 150 5V FixedTS3420CX6 Buck (Step‐down) SOT‐26 2.8 6 2 1250 Adj. TS3552CS Buck (Step‐down) SOP‐8 4.75 23 2 350 Adj. TS2509CS Buck (Step‐down) SOP‐8 4.5 23 3 500 Adj.TS2596CM5 Buck (Step‐down) TO‐263‐5L (D²‐PAK) 4.5 40 3 150 Adj.TS2596CM533 Buck (Step‐down) TO‐263‐5L (D²‐PAK) 4.5 40 3 150 3V FixedTS2596CM550 Buck (Step‐down) TO‐263‐5L (D²‐PAK) 4.5 40 3 150 5V FixedTS2596CZ5 Buck (Step‐down) TO‐220‐5L 4.5 40 3 150 Adj.TS2596CZ533 Buck (Step‐down) TO‐220‐5L 4.5 40 3 150 3V FixedTS2596CZ550 Buck (Step‐down) TO‐220‐5L 4.5 40 3 150 5V Fixed
• Wide input voltage range
• Synchronous and nonsynchronous PWM converters
• Adjustable current limit
• Short circuit, over temperature, over voltage, undervoltage protection
HALL EFFECT SENSORS SELECTION GUIDE
NON CONTACT SWITCHING AND SENSING WITH HALL EFFECT
SENSOR TYPESLatch
Uni‐Polar
N
S
VOBOP
BRP
N
S
VOBOPBRP
Omni‐PolarN
S
VOBOPN
BRPN
BOPS
BRPS
MAG
MAG
MAG
BLDC Motors Rotary/Linear Interrupt Switch Speed Sensor Position Sensor
TO‐92S
PDFN 2x2SOT‐23
Liquid Level Detector Motion Detector Proximity Switch Micro power ON/OFF Switch
Rotary SwitchSpeed Sensor
Proximity SwitchPosition sensor
Interrupt Switch
TypePart
Number VccOutput Current
Supply Current Max
MagneticOperating Point (BOP)Min/Max(Gauss)
Magnetic Release
Point (BRP)
Min/Max(Gauss)
Package
Bi‐Polar TSH181CT 3.5v – 20v 25mA 8mA 5/90 ‐90/‐5 TO‐92SBi‐Polar TSH188CT 2.5v – 24v 50mA 5mA 5/25 ‐25/‐5 TO‐92SBi‐Polar TSH188CX 2.5v – 24v 50mA 5mA 5/25 ‐25/‐5 SOT‐23Bi‐Polar TSH190CT 4.0v – 30v 25mA 8mA 10/110 ‐110/‐10 TO‐92SBi‐Polar TSH190CX 4.0v – 30v 25mA 8mA 10/110 ‐110/‐10 SOT‐23Uni‐Polar TSH282CT 3.0v – 24v 50mA 5mA 45/100 25/70 TO‐92SUni‐Polar TSH282CX 3.0v – 24v 50mA 5mA 45/100 25/70 TSOT‐23Omni‐Polar TSH248CX 2.5v – 3.5v 2mA 4mA 6/60 5/59 TSOT‐23Omni‐Polar TSH251CT 1.65v‐3.5v 1mA 3mA ‐55/55 ‐10/10 TO‐92SOmni‐Polar TSH251CX 1.65v‐3.5v 1mA 3mA ‐55/55 ‐10/10 TSOT‐23Omni‐Polar TSH253CT 1.8v ‐6.0v 1mA 6mA ‐60/60 5/‐5 TO‐92SOmni‐Polar TSH253CX 1.8v ‐6.0v 1mA 6mA ‐60/60 5/‐5 TSOT‐23Linear TSH481CT 3.0v – 6.5v 10mA 5mA ‐800/800 Sensitivity TO‐92SLinear TSH481CQ 3.0v – 6.5v 10mA 5mA ‐800/800 Sensitivity PDFN2x2
BSAT
LinearN
S
VOH 4V
MAG 2.5V
VOL 1V
BSAT
PHOTOCOUPLERS
Benchmark & Cross reference
Structure and Features Application
TSC’s photocouplers consist of a high‐intensity infrared light‐emitting diode (LED) optically coupled to a photodetector fabricated using the latest process.
Transistor output, DC/AC input.
VDE/UL/CQC/FI
Mainly used on Adapter, Charger, UPS, SMPS (Power) Computer terminals. System appliances, measuring instruments. Registers, copiers, automatic vending machines. Electric home appliances such as fan heaters, etc.
TSC Sharp Lite‐on NEC Toshiba Vishay COSMO
DC input Transistor output
TS816/STS817/S
PC816PC817
LTV‐816LTV‐817
PS2501‐1PS2561‐1
TLP421TLP521 TCET110x K1010
AC input Transistor output TS814/S PC814 LTV‐814 PS2505‐1 TLP626 SFH628A
PHOTOCOUPLER PORTFOLIO
Part number Package Viso(Vrms)
Output VCEO (V)
Output IC (mA)
CTR (Min.)
CTR(Max.)
TPC816A DIP‐4 5000 70 50 80 160TPC816B DIP‐4 5000 70 50 130 260TPC816C DIP‐4 5000 70 50 200 400TPC816D DIP‐4 5000 70 50 300 600TPC816MA DIP‐4M 5000 70 50 80 160TPC816MB DIP‐4M 5000 70 50 130 260TPC816MC DIP‐4M 5000 70 50 200 400TPC816MD DIP‐4M 5000 70 50 300 600TPC816S1A SOP‐4 5000 70 50 80 160TPC816S1B SOP‐4 5000 70 50 130 260TPC816S1C SOP‐4 5000 70 50 200 400TPC816S1D SOP‐4 5000 70 50 300 600TPC817A DIP‐4 5000 80 50 80 160TPC817B DIP‐4 5000 80 50 130 260TPC817C DIP‐4 5000 80 50 200 400TPC817D DIP‐4 5000 80 50 300 600TPC817MA DIP‐4M 5000 80 50 80 160TPC817MB DIP‐4M 5000 80 50 130 260TPC817MC DIP‐4M 5000 80 50 200 400TPC817MD DIP‐4M 5000 80 50 300 600TPC817S1A SOP‐4 5000 80 50 80 160TPC817S1B SOP‐4 5000 80 50 130 260TPC817S1C SOP‐4 5000 80 50 200 400TPC817S1D SOP‐4 5000 80 50 300 600
• Taiwan Semiconductor is focused on discrete power and power management semiconductor products.
• Broad range of new generation semiconductor products brings high efficiency, reliability and technology innovation to a cost competitive market.
Taiwan Semiconductor
Manufacturing
Product Portfolio
Pricing
Quality
TSC America Inc.3040 Saturn Street| Suite 200 |Brea, CA 92821 | USA
Phone: (657) 258‐0800Email: [email protected]
www.taiwansemi.com
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