Fine structural characterization of tip electronic ...€¦ · In-M4,5 O-K O-K Zn-L2,3 Zn-L1 a b...
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In-M 4,5 O-K O-K Zn-L 2,3 Zn-L 1 a b EuBa 2 Cu 3 O 7-x crystal structure. Cu Eu Ba O EuBa 2 Cu 3 O 7-x [100] BF-STEM image ADF-STEM image SE image 1nm 1nm 1nm Ga-K As-K Ga + As Ga-K As-K Ga + As Raw Filtered Raw Filtered Raw Filtered a : InO 2 , b : ZnO 2 ADF-STEM observation and EELS analysis of InO 2 / ZnO 2 multi layer specimen Atomic resolution SEM / STEM imaging of the superconducting material Atomic resolved EDX maps of the GaAs <011> single crystal Vacc：200 kV, Spectrum absorption time : three seconds, Energy dispersive, ：0.5 eV/channel Vacc：200 kV, Magnification：8,000 K Sample courtesy of Public Utility Foundation, ISTEC (International Superconductivity Technology Center) Vacc：200 kV, Mapping Image Size：128 X 100, Analysis period：12minute Hitachi Aberration Corrected HD-2700 STEM 1nm ADF-STEM image Fine structural characterization of tip electronic materials at atomic resolution
Fine structural characterization of tip electronic ...€¦ · In-M4,5 O-K O-K Zn-L2,3 Zn-L1 a b EuBa2Cu3O7-x crystal structure. Cu Eu Ba O EuBa2Cu3O7-x [100] ADF-STEM image BF-STEM
