GENERAL INFORMATION

1. Name of the event Workshop on the technology of molecular beam epitaxy: "MBE technology of hetero-structures with a high-mobility two-dimensional electron gas" 2. Date May 4-5, 2018 (2 days) 3. Location Skoltech, Room 407 4. Purpose of the workshop The objective of workshop " MBE technology of hetero-structures with a high-mobility Two-

Dimensional Electron Gas (2DEG)" is to review the current status of the MBE growth technologies

in the world, the trends and markets of MBE technologies, and to develop strategy of MBE

technology at Skoltech. The format of the meeting included plenary lectures, and informal

discussions on the feasibility, benefits and resources needed of the MBE technology at Nanofab

of Skoltech.

5. Attendees of workshop

Prof I Kukushkin, ISSP RAS, co-founder Terasense Ltd, Chernoglovka, Russia

Prof. A.Y. Egorov, ITMO RAS, CTO Connector Optics Ltd, St Petersburg, Russia

Prof. W Dietsche, ETH Zurich, Laboratory for Solid State Physics, Zurich, Switzerland

Prof Sven Hoefling, University of Wurzburg, GermanyProf. K.S. Zhuravlev, Rzhanov Institute of

Semiconductor Physics RAS, Novosibirsk, Russia

Prof. H Yamaguchi, NTT R&D Centre, Tokyo, Japan

Prof. N.I. Kargin, MEPHI, Moscow, Russia

Dr. A. S. Gusev, MEPHI, Moscow, Russia

Dr. Ilya Drozdov, Brookhaven National Laboratory, Upton, NY, USA

Dr A Kuntsevich, Lebedev Institute of Physics RAS, Moscow, Russia

Dr V Muravev, ISSP RAS, CEO Terasense Ltd, Chernoglovka, Russia

Prof. M Skvortsov, Skoltech, Moscow, Russia

Prof. N Gippius, Skoltech, Moscow, Russia

Prof. A Nasibulin, Skoltech, Moscow, Russia

Prof. V Antonov, Skoltech, Moscow, Russia

6. Plenary talks

Prof I Kukushkin, High mobility two-dimensional electron systems in GaAs, AlAs, ZnO and GaN

heterostructures: fundamental scientific effects and possible applications

Prof V Antonov, Skoltech Nanofab

Prof Werner Dietsche , Better physics with higher mobility

Prof. K.S. Zhuravlev, Novel pseudomorphic AlGaAs/InGaAs/GaAs heterostructures modulation-

doped by donors and acceptors

Prof. H Yamaguchi, Application of GaAs/AlGaAs modulation-doped heterostructures

Dr. I Drozdov, Oxide Molecular Beam epitaxy system for OASIS BNL - a case study (by Skype)

Prof. A.Y. Egorov, Technology III-V heterostructures at Connector Optics

Prof. Sven Hofling, Growth of quantum devices by molecular beam epitaxy: from III-V compound

to complex oxides

Dr. A Kuntsevich, Wan der Waals epitaxy of halcogenes

Dr. V Muraviev, Terahertz detectors and imaging arrays based on AlGaAs/GaAs nanostructures

The talks has been recorded and can be provided on request.

7. Trends and markets of MBE technologies

- Currently MBE growth technologies of III-V and II-VI materials in Russian Federation have

already significant presence: Ioffe Physico-Technical Institute, Rzhanov Institute of

Semiconductor Physics RAS, Connector-Optics Ltd, Istok, ISVCH RAS, MEPHI. The areas of

market oriented and fundamental research application covered by present MBE technologies in

Russia are: wafers for semiconductor photonics devices (DL, VCSELs, photodetectors for visual

and IR light), powerful high speed ( high frequency) transistors, including heterostructures with

new emerging materials like GaN

- Trends of the MBE in the world lies in new emerging materials, GaN, oxide materials (ZnO),

heterostructures for telecom applications, quantum coherent systems (solid state qubits, single

photon sources and detectors), components of high speed electronics. A limited offer is on the

market for high mobility 2DEG wafers. The offers are mainly for fundamental research.

- MBE technologies of high mobility 2DEG are matured. Technology enabled 6 Nobel prises.

MBE of high mobility of 2DEG are available at few centres in the world: Laurent Pfeiffer

(Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA),

Michael Manfra (Department of Physics and Astronomy, Purdue University, West Lafayette,

Indiana 47907, USA) Werner Wegsheider (Laboratory for Solid State Physics, ETH Zürich,

Zürich CH-8093, Switzerland), Vladimir Umansky (Braun Centre for Semiconductor Research,

Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel),

Dietsche Werner (Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569

Stuttgart, GermanyStuttgart, Zurich). Currently high mobility 2DEGs are state of art with mobility

reaching 30-40 x106 cm/Vs. They are still of interest for fundamental science with a limited offer

on the market. Typical cost of 2 inch wafer can be up to €10k. New fundamental discovers related

to high mobility 2DEG are saturated since 2012. However the new industrial markets emerged

with demand for high mobility 2DEG. TeraSense Ltd, Russian based start-up, fully uses the

opportunities with introducing to the market a plasmonic devices. TeraSense is working in

development of market, there are only few supplies of high mobility 2DEG wafers. There is no

competitive offers for such wafers from Russia, China. Europe can produce such wafers in a

limited volumes, and, mainly, for fundamental research. Trusted supplier of the wafers is from

USA.

- There is a trend in development of new 2D materials based on van der Waals coupling. There is

a large field for systematic fundamental study, which is now hot topic in solid state physics.

Technology is however is not matured for MBE level. Currently it is based on CVD, PLD and

similar deposition techniques.

- MBE technology at Skoltech would generate a stream of scientific publications in high ranked

journals if part of the materials produced will be given to leading research groups. The technology

will attract fundamental research laboratories for collaborative R&D.

8. Human and Technical recourses needed d for MBE technology.

In order to progress with MBE technology at Skoltech one needs to allocate human, financial and

infrastructure resources for a quite long time interval, ~10 years. The optimal structure of the MBE

technology at Skoltech should include:

- human recourses: one scientific leader, two permanent researches, 2-3 PhD and 1-2 master

students

- equipment: 2 medium size MBE reactor for multiple wafers of up to 3 inch size,

metrological tools for carrier concentration and mobility characterization (the latter can be

shared with Nanofab)

- laboratory space and engineering services: one room 8m x10m of Class 6, liquid nitrogen,

LN2, supply 150 l/day, electric power 20 kW, aircon 300 m2/h, process water 30 l/min at

15C, noise shielded room for compressors, media supply around the entire room, outlets

every 2m: forming gas, vacuum, single phase 220V, compressed air/nitrogen (dry), LAN,

Ar/N 6N > 4bar

- funding for maintenance and LN2, €100k/year, (€50k/year per system)

- shared facilities for cleaning of the UHV parts (sand blast, fume hood for chemical

treatment with sink)

-

9. Strategy of operation, customers, markets.

We believe that addition of MBE to Nanofab enhance Skoltech position in technology and

visibility. Nanofab at Skoltech is setup with emphasise at processing of III-V materials. With the

MBE technology Skoltech would offer a unique possibility of complete R&D processing of the

traditional high frequency devices (transistors, detectors, etc) and new emerging plasmonic

devices from the design of heterostructures to the final processed packaged device. This would be

a boost for industry and fundamental science related to 2DEG in Russia. Cooperation in MBE

technology would help to make a network between different MBE groups in Russia: Ioffe Institute,

Connector Optics Ltd, Rzhanov Institute of Semiconductor Physics RAS, MEPHI, which enhance

visibility of Skoltech.

Important aspect of MBE is a teaching at Skoltech . An advanced technology enabling

devices where fundamentals of physics can be explored, like Quantum Hall Effect, controllable

plasmons, spintronics, energy quantization in artificial atoms etc., would be attractive to students.

This would help to engage students with modern solid state science and technology.

Possible strategy of MBE at Skoltech would: 1) establish a small group , 3 persons, within

Nanofab centre, with a scientific leader, 2) purchase and install two MBE systems 3) to cover

maintenance and service cost support for the first 5 years. In order to boost the technology it would

be needed to attract a leading technology expert from elsewhere at the start of the project for a

short period, 3-6 months. He/she would help of establish the right culture, procedures and

expertise. MBE System 1 should be devoted to the growth of high mobility, up to 30x106 cm/Vs,

GaAs based heterostructures for fundamental research, new market of plasmonic devices and the

old market of high frequency transistors. MBE System 2 should be devoted to growth of a range

of new materials, may be including the oxide ones (ZnO). Exact materials for System 2 should be

determined by the scientific leader of MBE group. Customers for the materials produced by MBE

group will be research groups at Skoltech, ISSP RAS, Terasense Ltd, Istok, IPMT RAS, Lebedev

institute, RTI . The output of each MBE reactors should be not less than three 3 inch wafers per

day. We expect that sales of the wafers and external research project funding will enable us to

cover after 5 years 50% of the maintenance cost of the MBE.

Capital investment to the MBE technology would be Rub 295M. Annual cost for Skoltech

would be RUB29M. It would be 3.6 % of the running cost of Nanofab.

Item Title Cost Comments

1 Capital investment: two MBE

rectors

RUB 295M Exchange rate 75 RUB/€

2 Human resources: one scientific

leader and two researches

RUB 9.65M Cost per year

3 Maintenance RUB 8.4M Cost per year, including

electricity

4 Depreciation 25 years RUB 11M

10. Risk and negative impact of MBE technology at Skoltech

Investment in MBE technology assumes a continuity of the support at the scale of minimum 3 years. It is a large scale project. The combining investment for the first three years, which includes capital , running cost and human resources is RUB350M (Rub295M+RUB9.65M x 3 + RUB 8.4M x 3 =RUB 350M). In case of failure this investments will be unrecoverable.

A platform we are proposing would have one MBE system dedicated to the wafers with high mobility 2DEG. This system would potentially generate the income, which would partially cover the running cost of MBE technology. Second MBE system is intended for non-profitable R&D of new materials. It may happen that quality of the wafers of the first MBE will not be uniquely high, which put it in severe market competition with other producers in Russia and China. Amendments then should be made of MBE strategy at Skoltech.