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7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
http://slidepdf.com/reader/full/final-notesee2003-lect-21-sept-15 1/13
21 September 2015
Summary of last lecture
PN JUNCTION
• At thermal equlbrum !e ha"e co#ce#trato# $ra%e#t e&sts for
electro#s a#% holes across the 'u#cto#• (lectro#s a#% holes %)use* meet #ear metallur$cal 'u#cto# a#%
$et recomb#e%* %epleto# re$o# starts to form
• Pote#tal %)ere#ce P+ formato# %ue to ,&e% %o#ors a#%
acceptors a#% acceptors
• P+ creates electrc ,el%* !hch !ll try to %rft the carrers # the
opposte %recto#
• As lo#$ as %)uso# compo#e#t-the %rft compo#e#t* carrer
%)uso# !ll co#t#ue a#% the %epleto# re$o# !ll $ro!• Stea%y state* %)uso# compo#e#t s fully bala#ce% by the %rft
compo#e#t. At ths po#t* /o pote#tal barrer* o%epleto# !%th*
a#% ξ electrc ,el% are %e,#e%
To be remembere%3 co#ce#trato# $ra%e#t causes %)uso#* electrc ,el% causes
%rft compo#e#t
At equlbrum* the hole Jp a#% electro# J# curre#ts are 4eromea##$* #o #et curre#t o! across the 'u#cto#3
The total curre#t %e#sty J sum of both the hole a#% electro# curre#ts
s thus also 4ero at equlbrum3 J 6 Jp 7 J# 6 08J s the curre#t %e#sty Ampere9meters
1EE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
http://slidepdf.com/reader/full/final-notesee2003-lect-21-sept-15 2/13
21 September 2015
To%ay:s ;ecture
Sl%e 5<
Ths s the pcture of the process of PN 'u#cto# s create% #ot ,#she%
yet
There are Co#%ucto# =a#% (c o# the left a#% r$ht s%e
At the co#%ucto# ba#%* ca# be see# less #umber of electro# as the
e#er$y le"el s #creas#$. Smlarly for the holes.
There !ll be a J J is the current density, units=m!ere"meter %)uso# o#
the %)uso# re$o#* but the J %rft !ll al!ays try to a$a#st t. U#tl
both of them meet at equlbrum !here the J %)uso# a#% the J %rftare equal.
Al!ays %)ere#tate bet!ee#
(c a#% (" at P s%e* (c a#% (" at N s%e.
The pote#tal barrer #otential Energy $arrier for electro# %)us#$ from #
to p s%e s the %)ere#ce bet!ee# these 2
2EE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
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21 September 2015
Sl%e 5>
?@p0 s %e,#e% o# P s%e %-& !0 is the length o' de!letion o' the ! side(
@#0 s %e,#e% o# # s%e
e %e,#e% 7& to be from p to # %recto#
The curre#t %e#sty equato# for %epleto# re$o#3
+rft %ue to the electrc ,el%* %)uso# %ue to co#ce#trato# $ra%e#t.
hy there s a m#us o# the %)uso# term =ecause t mo"es fromh$her co#ce#trato# to lo!er co#ce#trato#.
The# !e $et
BEE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
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21 September 2015
=y substtut#$ these 2 equato#s to eq. * !e $et
+epleto# re$o#6,&e% post"e char$e a#% #e$at"e char$e
hy the /p a#% /# s u#form S#ce both pote#tal are outs%e the
%)uso# re$o#* they are compe#sate% by ther o#4e% %opa#ts %do!ants
is a trace im!urity element that is inserted into a su$stance()
EE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
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21 September 2015
P s%e 3 ma'orty s hole
Ppo s the hole co#ce#trato# o# P s%e at thermal equlbrum
I# PN 'u#cto# !e assume all %opa#ts are o#4e%
So* Ppo equals Na
##o s the electro# co#ce#trato# o# N s%e
p#o s the hole co#ce#trato# o# N s%e
*+oo at the !otential diagram
/p a#% /# s u#form* the cha#$e s o#ly o# re$o# %ue to
co#ce#trato# $ra%e#t
5EE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
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21 September 2015
Sl%e D23
e !a#t to ,#% the e&presso# of /o the co#tact pote#tal
Pote#tal cha#$es from /p to /# E hle carrer from ppo to p#o
Apply the #te$rato# !th the lmt
e $et
As ca# be see# # the formula* t %epe#%s o# the #tr#sc co#ce#trato#
ma'orty hole co#ce#trato# at p?s%e a#% m#orty hole co#ce#trato#
at # s%e
Co#cluso#3 co#tact pote#tal %epe#%s o# %opa#ts co#ce#trato# a#%
#tr#sc carrer co#ce#trato#.
/o !ll cha#$e for each %)ere#t semco#%uctors. /FaAs-/S
hy /FaAs-/S
=ecause ($ FaAs s $reater tha# ($ S* !hch mea#s # FaAs G # S
because # ∝e
− E g
kT * !hch mea#s the lo$arthmc terms # /0 s b$$er*
!hch result#$ a b$$er /0.
DEE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
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21 September 2015
Sl%e DB
e ca# use mass acto# la! because t:s happe#e% o# thermal
equlbrum
(quato# > tells that the carrer co#ce#trato# of the same type from
o#e s%e s relate% to the other s%e of PN 'u#cto# by the co#tact
pote#tal.
Fo to e&le o# sl%e D
Herm le"el The energy o' the highest occu!ied state at 0 is re'erred to as the Fermi
energy EF . re'er to the lecture note /ee 2 %epe#%s o# the co#ce#trato# of the
%opa#t
The (p s the I#tr#sc Herm ;e"el
<EE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
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21 September 2015
Part b* use the formula $"e# before to calculate the Pote#tal barrer
The Herm le"el of PN 'u#cto# rema#s co#sta#t. O# %a$ram abo"e* !e
are try#$ to al$# the ferm e#er$y le"el for PN 'u#cto#.
hy are they %e#ctcal
;oo at equato# <
EE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
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21 September 2015
SPACE CHARGE
Assumpto#
• No free carrers !th# %epleto# re$o# * or !e may say re$o#
co#ssts of o#ly char$es %ue to u#compe#sate% %o#or a#%
acceptor o#s.
• Char$e #eutralty s ma#ta# outs%e
The char$e %e#sty o# p s%e s the %opa#t co#ce#trato# tmes the
char$e
The area of ths $raph s the Char$e %e#sty. A %e#otes the area
co#tact of p# 'u#cto#* A tmes � results the "olume* N% a#% Na s the
%opa#t co#ce#trato#
>EE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
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21 September 2015
Sl%e D> s the %er"ato# for the char$e #eutralty arou#% p# 'u#cto#
The rato s commo# for both formulas 11K12 $ree# bor%er bo&es
&po %epe#%s o# N% E a#% &#o %epe#%s o# Na
Sl%e <0 O#e s%e% abrupt p# 'uc#to#s
+epleto# #to the l$htly %ope% s%e
hy See equato# 11 a#% 12* the le#$th of the %)uso# re$o# s
%epe#%e% o# N% a#% Na.
Sl%e <1 for further llustrato#.
10EE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
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21 September 2015
(lectrc ,el% "arato# !th#
e are %eal#$ !th ho! the electrc ,el% cha#$es !th# re$o#
It:s a l#ear equato#* !e ca# %o the #te$rato# as !rtte# o# sl%e <B
S#ce the electrc ,el% s "are% across the p# 'u#cto#* t:s esse#tal to
,#% the pea electrc ,el%.
11EE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
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21 September 2015
The ma&mum electrc ,el% s at &60 at state% o# sl%e <
Sl%e <5
/o s the co#tact pote#tal. The area of the tra#$le o# the pcture belo!
s the co#tact pote#tal.
s the %)uso#9%epleto# !%th
12EE2003 Semiconductor Fundamentals-Nanyang Technological University
7/23/2019 Final Notes_EE2003 Lect 21 SEPT 15
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21 September 2015
(&le 2 o# sl%e <D
F"e#
Nd % donor concentration (
Na % acce!tor concentration (
% area (
ni % intrinsic carrier concentration (
Plu$ # all the $"e# "arables to the formulas.
There s a brea o# the %a$ram o#
sl%e < pcture o# the left
t:s #ot easy to %ra! a lo#$ l#e
l#early* the brea smplfy the
%a$ram.
Fe/ sources+N2-#N Junction in E1uili$irium !d' lecture notes
2+4 to +5Energy 6and o' SemiconductorsN78 %ug 209:( !d' lecture notes
This is a lin o' an e-$oo 'rom NTU li$rary %not mention in the lecture, ;ust my recommendation(, you can <nd 'urther e!lanations a$out !n ;unction 'rom !age >> on/ards)
htt!""eds)a)e$scohost)com"eds"detail"detail?sid=@$>$9@d>-@4A@-4'@9-a5e>-59'@$4:4'04' B40sessionmgr4003Cvid=0Chid=4203C$data=JnN!d7U@D+!dmUmc2Nvc7U@c2l0DGB3d
B3dHN=ntu)aA30@A5Cd$=cat00903a
1BEE2003 Semiconductor Fundamentals-Nanyang Technological University