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Xing Sheng, EE@Tsinghua
1
Xing Sheng盛兴
Department of Electronic EngineeringTsinghua University
Film DepositionPart II: Si Oxidation
Principles of Micro- and Nanofabrication for Electronic and Photonic Devices
Xing Sheng, EE@Tsinghua
CMOS Transistors
2
Xing Sheng, EE@Tsinghua
Very stable for Ge, GeO2 is soluble in water, and decompose at 450 oC
for GaAs, GaOx and AsOx have many defects
Easily etched wet etch (HF solution) or dry etch (F based plasma)
Good diffusion barrier (low dopant diffusivity Dox << DSi )
High quality insulator band gap ~ 8 eV, resistivity > 1016 *cm
High dielectric strength (> 500 V/m)
Low interface state / defect density (< 1010 cm-2)
Properties of SiO2
3
Xing Sheng, EE@Tsinghua
Properties of SiO2
4
Xing Sheng, EE@Tsinghua
5
Native Oxide
Si forms native oxide in the air (1~2 nm, a few hours)Q: amorphous or crystalline SiO2 ?
SiO2
Si
clean Si (oxide removed by HF)hydrophobic
Si with native oxidehydrophilic
Xing Sheng, EE@Tsinghua
6
Thermal Oxide Growth
dry oxidation Si (s) + O2 (g) = SiO2 (s)wet oxidation Si (s) + H2O (g) = SiO2 (s) + H2 (g)
Video
Xing Sheng, EE@Tsinghua
The Deal-Grove (D-G) Model
7
Xing Sheng, EE@Tsinghua
The Deal-Grove (D-G) Model
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(reaction limited)
A related to reactionB related to diffusion initial native oxide
Xing Sheng, EE@Tsinghua
Thermal Oxidation
9
Process Parameters Time
Temperature
Gas type (O2, H2O, ...)
Gas pressure
Crystal orientation
Dopant (B, P, As, ...)
Control Parameters Oxide thickness
Film quality (defects, dielectric strength, ...)
Xing Sheng, EE@Tsinghua
Dry vs. Wet Oxidation
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wet oxidation is 10~100 times faster than dry oxidationbecause H2O has higher solubility/diffusivity in SiO2
Video
Xing Sheng, EE@Tsinghua
Crystal Orientation
11
Si (111) has smaller A, but same B with Si (100)
higher growth rate at initial stage
why ??
Xing Sheng, EE@Tsinghua
Crystal Orientation
12similar rates at long time oxidation (diffusion limited)
Si (100) Si (111)
Xing Sheng, EE@Tsinghua
Thermal Oxidation - Simulation
13https://cleanroom.byu.edu/processes#Microfab_OxideGrowth
Xing Sheng, EE@Tsinghua
SiO2 Film Thickness Measurement
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color difference
Xing Sheng, EE@Tsinghua
SiO2 Film Thickness Measurement
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Spectroscopic Ellipsometer
Xing Sheng, EE@Tsinghua
SiO2 in CMOS
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gate oxide for transistors
2
)( 2
,thG
SatD
VVC
L
WI
Xing Sheng, EE@Tsinghua
SiO2 in CMOS
17
Local Oxidation of Si (LOCOS)
For isolation
transistor region
Xing Sheng, EE@Tsinghua
SiO2 in CMOS
18
temperature
other methods to deposit SiO2
Q: why?
Xing Sheng, EE@Tsinghua
SiO2 in CMOS
19
high dielectric for gate oxide
2
)( 2
,thG
SatD
VVC
L
WI
t
AC 0
low dielectric for insulating
reduce RC delay
Xing Sheng, EE@Tsinghua
20
thickness t is already ~ nmhigh -> large C -> large ID
t
AC
VVC
L
WI thG
SatD
0
2
,2
)(
Oxide for High Dielectric
Xing Sheng, EE@Tsinghua
Porous SiO2 for Low Dielectric
21
SiO2
= 3.9air
= 1.0
Xing Sheng, EE@Tsinghua
SiO2 in Biointegrated Devices
22
Thermal oxide is an ideal moisture barrier
H. Fang, et al., Proc. Natl. Acad. Sci. 113, 11682 (2016)
At room temperature, it will take > 100 years to dissolve 1 m thermal SiO2 in water
useful for implantable devices