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Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

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Page 1: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Page 2: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

http://www.pcworld.com/article/2145440/samsung-teams-with-globalfoundries-on-3d-chips.html

Page 3: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

http://www.electronicsweekly.com/news/general/intel-make-multi-die-14nm-finfet-devices-altera-2014-03/

Page 4: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Page 5: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Source: Robert Chau, Intel

Page 6: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Page 7: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Page 8: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Page 9: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Page 10: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Page 11: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Page 12: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Page 13: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Page 14: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

Non-Conventional Channel Materials?

Molybdenum Disulfide Graphene

See http://spectrum.ieee.org/nanoclast/semiconductors/materials/cause-of-2d-molybdenum-disulfides-electronic-shortcomings-revealed

Page 15: Field Effects Transistorscourses.egr.uh.edu/ECE/ECE4339/Class Notes/ECE 4339 - MOSFET - summary.pdf3-D Tri-Gate transistor form conducting channels on three sides of a vertical fin

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