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Equipment to Supply Pure Ozone Gas ( 100%) Continuously Specifications in this catalog are subject to change without notice. MB64-3059B As of Jul., 2014 2014-7ME 1.5L0.5L ThinkPark Tower, 2-1-1, Osaki, Shinagawa-ku, Tokyo, 141-6029 Japan www.meidensha.co.jp Applications/ Notifications(for the Domestic Use in Japan) By Establishment of this Equipment, you need to submit applications/ notifications to the Prefecture. We support by creating the forms. High Pressure Gas Production Notification High Pressure Gas Production Facilities Change Notification Class 2 Storage Place Establishment Notification Class 2 Storage Place Position Change Notification This Equipment is developed by AIST (National Institute of Advanced Industrial Science and Technology) and Meidensha. Pure Ozone Generator High Purity Ozone Gas Generator Application Field Application Technology Expected Effect Environment Water Treatment Pure Ozone Treatment Method Sterilization, Deodorization, Decolorization Medicine Medical Equipment Pure Ozone Treatment Method Sterilization, Pharmacy (Organic Synthesis) Film FPD Gas Adding Treatment Method Surface Reforming/ Coating of Films for Touch Panel Semiconductor Packaging Surface Reforming/ Coating of Films for FPC Food Industry Surface Reforming of Packing Material Battery Surface Reforming of Film for Solar Cell Material Elements Pure Ozone Treatment Method Reforming of Carbon Nanotube Oxidization of Spherical Silicone Battery Electrode Gas Adding Treatment Method Electrode Reforming Semiconductor Deposition Pure Ozone Treatment Method UV Excitation Ozone CVD Treatment Method Gas Adding Treatment Method Oxidize, CVD, Insulator Film Reforming, Ashing, Dry Cleaning Lithography Photomask Reforming, Precision Components Cleaning, EUVL Advanced Technology MEMS Pure Ozone Treatment Method, Gas Adding Treatment Method Ashing, Dry Cleaning Nanoimprint Stamper Dry Cleaning Micromachining High-Temperature Superconductive Film, MBE Printed Electronics Surface Reforming/ Coating before/ After Printing Process Example Stamper Cleaning by Nanoimprinting (Gas Adding Treatment Method) Removal of the Resist from Stamper Film Surface Reforming (Gas Adding Treatment Method) Example) Estimated Material: Organic Film Stamper Resist Adhesion Heat Process (Condition: Room Temperature, 5 min.) Mold Heating/ Pressurizing Cooling/ Mold Release Before After Removal of the Resist Thermoplastic Resin Gas Adding Treatment Method (Ultra Dry Cleaning Method) Organic Film Wettability Improvement Surface Reformed Layer Before After Enough Wettability and Durability after a Month Gas Adding Treatment Method (Ultra Dry Cleaning Method)

Field Application Technology Expected Effect Pure Ozone ... · Silicone UV Light Source Gas Si Pure Ozone (O3) Heat (200℃~300℃) Further Lower Temperature Difficult to decompose

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Page 1: Field Application Technology Expected Effect Pure Ozone ... · Silicone UV Light Source Gas Si Pure Ozone (O3) Heat (200℃~300℃) Further Lower Temperature Difficult to decompose

Equipment to Supply Pure Ozone Gas (≒100%) Continuously

Specifications in this catalog are subject to change without notice. MB64-3059B As of Jul., 20142014-7ME(1.5L)0.5L

ThinkPark Tower, 2-1-1, Osaki, Shinagawa-ku, Tokyo, 141-6029 Japan

www.meidensha.co.jp

Applications/ Notifications(for the Domestic Use in Japan)

By Establishment of this Equipment, you need to submit applications/ notifications to the Prefecture. We support by creating the forms.・High Pressure Gas Production Notification ・High Pressure Gas Production Facilities Change Notification・Class 2 Storage Place Establishment Notification ・Class 2 Storage Place Position Change Notification

This Equipment is developed by AIST (National Institute of Advanced Industrial Science and Technology) and Meidensha.

Pure Ozone GeneratorHigh Purity Ozone Gas GeneratorApplication

Field Application Technology Expected Effect

Environment Water Treatment Pure Ozone Treatment Method Sterilization, Deodorization, Decolorization

Medicine Medical Equipment Pure Ozone Treatment Method Sterilization, Pharmacy (Organic Synthesis)

Film

FPD

Gas Adding Treatment Method

Surface Reforming/ Coating of Films for Touch Panel

Semiconductor Packaging Surface Reforming/ Coating of Films for FPC

Food Industry Surface Reforming of Packing Material

Battery Surface Reforming of Film for Solar Cell

Material Elements Pure Ozone Treatment Method Reforming of Carbon NanotubeOxidization of Spherical Silicone

Battery Electrode Gas Adding Treatment Method Electrode Reforming

Semiconductor

Deposition

Pure Ozone Treatment MethodUV Excitation Ozone CVD Treatment MethodGas Adding Treatment Method

Oxidize, CVD, Insulator Film Reforming, Ashing, Dry Cleaning

Lithography Photomask Reforming, Precision Components Cleaning, EUVL

Advanced Technology

MEMS

Pure Ozone Treatment Method, Gas Adding Treatment Method

Ashing, Dry Cleaning

Nanoimprint Stamper Dry Cleaning

Micromachining High-Temperature Superconductive Film, MBE

Printed Electronics Surface Reforming/ Coating before/ After Printing Process

Example

Stamper Cleaning by Nanoimprinting (Gas Adding Treatment Method)

Removal of the Resist from Stamper

Film Surface Reforming (Gas Adding Treatment Method)

Example) Estimated Material: Organic Film

Stamper Resist Adhesion

Heat Process

(Condition: Room Temperature, 5 min.)

Mold Heating/ Pressurizing

Cooling/ Mold Release

Before After

Removal ofthe Resist

ThermoplasticResin

Gas Adding Treatment Method(Ultra Dry Cleaning Method)

Organic FilmWettability

Improvement

Surface Reformed Layer

Before After

Enough Wettability and Durability after a Month

Gas Adding Treatment Method(Ultra Dry Cleaning Method)

Page 2: Field Application Technology Expected Effect Pure Ozone ... · Silicone UV Light Source Gas Si Pure Ozone (O3) Heat (200℃~300℃) Further Lower Temperature Difficult to decompose

UV LightSiliconeSourceGas Si

Pure Ozone(O3)

Heat(200℃~300℃)

Further LowerTemperature

Difficult to decompose

TEOSHMDSTMS

Si SiO2

Pure Ozone Treatment Method

The method to spray pure ozone gas (with strong oxidizing power) on the object directly : Effective for:1. Speedy oxidization of semiconductor chips at low temperature. 2. As a resource of the oxidizing gas for high-spec deposition

equipment like Molecular Beam Epitaxy.

UV Excitation Ozone CVD Treatment Method

The method to activate reaction with ozone irradiated by UV light: Effective for:1. Formation of high quality film with less damage (lowering

temperature less than 300℃ )

Gas Adding Treatment Method

The method to add reaction-accelerating gas (e.g., Ethylene) to ozone : Effective for:1. Removing organic materials at room temperature (Ultra Dry Cleaning Method) 2. Surface reforming (Dry Ozone Reforming Method).

Features

3 Technologies to Apply the Pure Ozone Gas Safely and Stably.

SiSi

SiO2

Pure Ozone(O3)

ResistObject (ex: Wafer Substrate)

CO2 H2O CO2 H2O

Removal of the Resists

Pure Ozone(O3)

Ethylene(C2H4)

O Radical, H Radical, OH Radical etc.

Continuous Ozone Supply (without Heavy Metal and Impurities)

Chiller Chiller Chiller

100% Liquid Ozone

Pure Ozone Gas

Vacuum Exhaust

Oxygen-OzoneMixed Gas

OPEN

CLOSE

CLOSE

Feed Standby Charge

CLOSE

CLOSE

CLOSE OPEN

OPEN

CLOSE

Safety Measurement

Design Concept:

Always keep the system safe by operating under the condition of high purity and low pressure.

Safe Design

Explosion-proof DesignTemperature / pressure control with the fail safe system by power failure / trouble.

Standards Certification

The unit is conformed to international standards: SEMI-S2, UL, NFPA, CE etc.

Quality Assurance

Safety against gas leakage is verified by tracer gas test of a third-party certifier.

Type Batch Type Continuous Supply TypeContinuous Supply Type (Auto Flushing Function

Available)

Unit Configuration

Rating

Number of Ozone Chamber

Main 1 2 3

For Standby 0 0 1

Store PartStandard Ozone Gas Value*1 (cc)/ Chamber 7,300/ Chamber 15,000/ Chamber 15,000/ Chamber

Liquid Ozone Purity [%] ≒ 100 ≒ 100 ≒ 100

Supply PartContinuous Supply Rate [sccm] 20 100 100

Ozone Gas Purity Rate (%) More than 92 More than 92 More than 92

Continuous Supply Time Max. 6h Continuous Supply Continuous Supply

National Safety Standards: SEMI-S2, UL, NFPA, CE Conformable Conformable Conformable

Main Function

Safety Control

Negative Pressure Control*2 Available Available Available

Shutdown Function by Power Failure/ Earthquake*3 Available Available Available

Auto Flushing Function*4

Out of Unit Operation Available Available Available

In Unit Operation*5 N/A N/A Available

*1 : Standard Ozone Gas Values are the capacity/ flow rate values at the 0℃ , 1 atm. *2 : This function checks the negative pressure and controls not to leak ozone out of board. *3 : This Function detects the power failure/ the earthquake (100-200 GAL) and stops the whole unit automatically. *4 : This function automatically flushes within the auto-mode accumulated impurities in the ozone chambers.*5 : The unit can always be on-standby with flushing an idle chamber automatically.

Specification External View (Measurement without Protrusion) [unit: mm]

WEIGHT: 650kg

CAB POGB

Weight: See the Table

2000

2000

900 D

600

Chiller

WEIGHT: 140kg

686

750

510

W

Top

FrontPOGB

Number of the Chamber 1 2 3

W[mm] 220 580 760

D[mm] 600 840 840

WEIGHT[kg] 350 450 500

Utility (Including Unit Construction)

Electrical System

Air System

Water System

Voltage:3φAC210 (±10%)Frequency: 50/60HzCapacity: About 20kVA

High purity Oxygen (for Ozone Generation)Purity: 4N (More than 99.99%)Pressure: 0.5~0.9 MPa (G)Flow Rate: 3~5 L/min

High purity Nitrogen (for Addition)Purity: 4N (More than 99.99%)Pressure: 0.5~0.9 MPa (G)Flow Rate: 10~20 L/min

Nitrogen (for Emergency Purge)Purity: 4N (More than 99.99%)Pressure: 0.5~0.9 MPa (G)Flow Rate: 10~20 L/min

Coolant (Ozonizer/ Chiller)Pressure: 0.2~0.5 MPa (G)Flow Rate: 10~20 L/minTemperature: 15~28 ℃

Dry Air (for Valve Drive)Pressure: 0.5~0.9 MPa (G)Flow Rate: 10~20 L/min

CAB POGB

UPS

DC Power

Control Unit

Ozonizer

ValveSystem

OzoneDecomposer

Vacuum Pump

P

OzoneDecomposer

DC15V DC24V

DC Power

Control Unit

OzoneChamber

Cold Head

Chiller

ValveSystem

DC15V DC24V

AC210V AC210V

To Vacuum Pump/ Chiller

OxygenExhaust

High PurityOzone Gas

OxygenExhaust

Pure Ozone GeneratorHigh Purity Ozone Gas Generating Equipment

High Purity Ozone gas has rich potential for cleaning / reforming / film depositing of various objects.

Continuous supply of ozone gas is available by connecting several ozone chambers in parallel.