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FDX and FinFET:
Differentiated Technologies for Diverging Markets
Dr. Rutger Wijburg, SVP and General Manager Fab 1, Dresden
© 2016 GLOBALFOUNDRIES
These trends are defining the „new normal“ in our industry …
Revenue growth is slowing:
CAGR 1985 – 2012: 10.1%
exp. CAGR 2013 – 2018: 4.3%
ASPs continue to be under pressure.
New market segments start with low ASPs to begin with
Cost of going from 65nm to 20nm:
Fab cost up 168%
Process Dev cost up 225%
Chip Design cost up 341%
Increasing complexity of Hardware/Software co-development
Sources: EETimes http://www.eetimes.com/document.asp?doc_id=13303741
© 2016 GLOBALFOUNDRIES
… while the challenges keep multiplying
We do not see when EUV and if 450 will deliver
sufficient cost improvements.
Shrinking no longer results automatically in
performance, power and cost benefits.
Traditional logic growth markets are flattening.
IoT market requires low power & low cost
as well as collaboration along value chain.
Memory poses new challenges with new
materials (e.g MRAM or 3D NAND).
Not surprisingly, the trend towards consolidation continues
2
The key growth drivers for markets of the future
• One technology doesn’t fit all
• Intelligence is being built in
• Understand and anticipate
the needs of the end-markets
Connectivity and AI
Emergence of Intelligent Computing
Developments in Pervasive Computing
AR / VR
© 2016 GLOBALFOUNDRIES 3
Market Shifts
Mobile saturation
forcing System Integration
5G driving high performance
RF Network Infra and variable
performance mini Base-Stations
AI / DNN at the Edgerequiring more Performance,
Battery / ULL savings, and
lower system costs
Data Center Servers
and HP Computing requires
maximum performance 100%
of the time
Increasing semi content
in Automotive ADAS,
Body Electronics, IVI
AI requires Acceleration
of Increased Performance
and Tighter Memory
Integration
IoT mass-market adoption
driven by Low Power, RF
connectivity, and full-system
integration
Gaming experiences on
Consoles, Displays, Wearables
moving to AI and AR / VR
CLIENTS
AutomotiveIoTMobile
DATA CENTERS
Compute / CloudsWired / Wireless
NETWORKS
How does the GLOBALFOUNDRIES
roadmap support this?
© 2016 GLOBALFOUNDRIES 4
7nm FinFET
16/14nmFinFET
28nm
55nm40nm
• High Performance Computers/Servers, Graphics, High-end Mobile drove adoption of 16/14nm FinFET
• Servers CPUs will need 7nm performance and drive 7nm FinFET adoption
Cost of development is a huge barrier
Don’t need performance all the time, but needUltra-Low-Power in all modes
Need Analog/RF/NVM integration for connectivity
However, It is not well suited to large number of applications…
Our roadmap reflects the real market-need for differentiation
© 2016 GLOBALFOUNDRIES 5
7nm FinFET
16/14nmFinFET
28nm
55nm40nm
• High Performance Computers/Servers, Graphics, High-end Mobile drove adoption of 16/14nm FinFET
• Servers CPUs will need 7nm performance and drive 7nm FinFET adoption
However, it is not well suited for a large number of applications…
Our roadmap reflects the real market-need for differentiation
Low power Low cost
© 2016 GLOBALFOUNDRIES 6
© 2016 GLOBALFOUNDRIES
Our roadmap offers multiple tracks -
reflecting different market requirements
http://www.3dincites.com/wp-content/uploads/forkintheroad-1024x653.png
7
Performance & Density at Any Cost – Servers, Networking,
Graphics, High-end Mobile
7nmFinFET
14nmFinFET
28nm HK& PolySi
Higher Performance and Power Reduction
at lower Die-Cost over 14nm and 10nm
2nd generation FinFET
Logic density over
17M gates/mm2
Enables highest absolute performance
>3.5GHz A72 performance
(>30% over 14nm)
Source: GLOBALFOUNDRIES internal assessment© 2016 GLOBALFOUNDRIES
Track 1 - FinFET
8
Cost-Effective Performance for Connected and Low Power
Embedded Applications
Performance & Density at Any Cost – Servers, Networking,
Graphics, High-end Mobile
7nmFinFET
14nmFinFET
28nm HK& PolySi
40/55nmeNVM
eMRAM
22FDX®
© 2016 GLOBALFOUNDRIES
• More than 50 customers
engaged
• FinFET performance at
28nm die cost
• Energy efficiency
– Ultra-low voltage (0.4v)
– Ultra-low leakage (1pA/um)
• Software-controlled body-bias
• RF integration
Track 2 - FDX
9
Cost-Effective Performance for Connected and Low Power
Embedded Applications
Performance & Density at Any Cost – Servers, Networking,
Graphics, High-end Mobile
eNVM
12FDX™
7nmFinFET
14nmFinFET
28nm HK& PolySi
40/55nmeNVM
eMRAM
22FDX®
© 2016 GLOBALFOUNDRIES
Track 2 – FDX extending to 12nm
10
© 2016 GLOBALFOUNDRIES
7nm FinFET Platform OverviewStrong value proposition compared to 14nm
Total
Power
• High performance tuned
− Multiple Work-Functions
− Up to 17 levels of metal
− High speed SRAM
− Advanced MIMCAP
• Optical litho based with EUV compatibility
• Fully enabled platform:
− ASIC design services
− 2.5D/3D packaging
Device
Performance
14nm7nm
>30%
>60%
11
22FDX™ Platform – Introduced One Year Ago
70% lower power than 28HKMG
20% smaller die than 28nm bulk planar
20% lower die cost than 16/14nm
FD-SOIPlanar process similar to bulk
Ultra-thin Buried
Oxide Insulator
Fully Depleted
Channel for
Low Leakage
Architected for:• Emerging products in IoT, Mobile, and RF
Enables differentiated customer solutions:
• FinFET-like performance at 28nm cost
• Energy efficiency– Ultra-low voltage (0.4v)
– Ultra-low leakage (1pA/um)
• Design flexibility and integration– Software-controlled body-bias
– RF integration
© 2016 GLOBALFOUNDRIES 12
Our 22FDX™ execution and value proposition is strong
PDK version 0.6 released in August
50 customers engaged - customer prototyping underway in Fab 1
Volume Production of first platform in 2017
Device performance at target
Logic & SRAM yields ahead of schedule; close to 28nm mature yields
Ultra-low power, ultra-low voltage operation, and ultra-low leakage
70% lower power vs. 28nm HKMG
0.4v logic operation
~1pA/um
Ultra-high performance
FinFET performance via forward body-bias
Integrated RF and Analog: Reduced system cost and power
Superior RF/Analog characteristics enables 5G applications
© 2016 GLOBALFOUNDRIES 13
© 2016 GLOBALFOUNDRIES
22FDX/12FDX low power RF SOC technology
FD-SOI (22FDX & 12FDX) is a truly
differentiating technology for
RF SOC applications
– Low Vt and Steep subthreshold slope = 90mV/Decade
– Low voltage power supply Vdd=0.8V
– Unique back gate bias threshold voltage adjust
– Excellent Analog device characteristics
– Excellent RF with High fT and high fMAX
NMOS
BOX
Substrate
Si-P
HK/MGPoly-Si
NiSiNiSi
Si-Channel
PMOS
NiSi
SiGeB
BOX
SiGe Channel
Substrate
0
0,2
0,4
0,6
0,8
1
1,2
1,4
Masks (a.u.) Performance @ Iso-Power (a.u.)
FDX best for low power, low cost solutions
With body-biasing delivers FDX FinFET-like performance
• Next node performance with 40 percent fewer masks
• 10nm FinFET performance at less than 16nm FinFET cost
10FF12FDX(w/BB)
14/16FF22FDX(w/BB)
10FF
12FDX
14/16FF
22FDX
40% fewer masksLower mask cost
Reduced cycle time
FinFET performance and powerFDX has superior RF/Analog to FF
Software controlled body-bias14
Wired / Wireless
COMMUNICATIONS NETWORKSMARKETS / APPLICATIONS
AutomotiveIoTMobile
DATA CENTERS
Compute / Clouds
Market shifts – favorable to FDXTM
Mobile saturation forcing System Integration
IoT mass-market adoption driven by Low Power, RF
connectivity, and full-system integration
Increasing semi content in Automotive ADAS, Body
Electronics, IVI
AI / DNN at the Edge requiring more Performance,
Battery / ULL savings, and lower system costs
5G driving high performance RF Network Infra and variable
performance mini Base-Stations
Gaming experiences on Consoles, Displays, Wearables moving
to AI and AR / VR
AI requires Acceleration of Increased Performance and Tighter
Memory Integration
15
Ecosystem and Initial Contributing Partners
To facilitate FDX SoC design
and reduce time to market:
• Creates market place for FDX solutions
• Provides easy access to plug and
play solutions
• Minimizes customer development costs
• Lowers barriers of migration from
bulk nodes
• Partners take advantage of FDX growth
IP
ASIC
EDA
OSAT
Design
Services
System
IP
Customers
© 2016 GLOBALFOUNDRIES 16
22FDX® – eMRAM
• 1,000x faster write speeds
• 1,000x higher endurance
• Scalable beyond 22nm; planned for both
FinFET and FDX platforms
• Versatile – utilize for both code storage
and working data
• Accelerates real-time vision processingand 3D mapping updates
© 2016 GLOBALFOUNDRIES 17
Cost-Effective Performance for Connected and Low Power
Embedded Applications
Performance & Density at Any Cost – Servers, Networking,
Graphics, High-end Mobile
eNVM
12FDX™
7nmFinFET
14nmFinFET
28nm HK& PolySi
40/55nmeNVM
eMRAM
22FDX®
© 2016 GLOBALFOUNDRIES 18
Trademark Attribution
GLOBALFOUNDRIES®, the GLOBALFOUNDRIES logo and combinations thereof, and GLOBALFOUNDRIES’ other trademarks and service marks are owned by GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. All other brand names, product names, or trademarks belong to their respective owners and are used herein solely to identify the products and/or services offered by those trademark owners.
© 2016 GLOBALFOUNDRIES Inc. All rights reserved.
Thank you for your interest!