FDMS001N025DSD - PowerTrench Power Clip

© Semiconductor Components Industries, LLC, 2017

October, 2017 − Rev. 01 Publication Order Number:

FDMS001N025DSD/D

FDMS001N025DSD

PowerTrench� Power Clip

25 V Asymmetric Dual N−ChannelMOSFET

General DescriptionThis device includes two specialized N−Channel MOSFETs in a

dual package. The switch node has been internally connected to enableeasy placement and routing of synchronous buck converters. Thecontrol MOSFET (Q1) and synchronous SyncFET (Q2) have beendesigned to provide optimal power efficiency.

FeaturesQ1: N−Channel• Max rDS(on) = 3.25 m� at VGS = 10 V, ID = 19 A

• Max rDS(on) = 4 m� at VGS = 4.5 V, ID = 17 AQ2: N−Channel• Max rDS(on) = 0.92 m� at VGS = 10 V, ID = 38 A

• Max rDS(on) = 1.20 m� at VGS = 4.5 V, ID = 34 A

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting inLower Switching Losses

• MOSFET Integration Enables Optimum Layout for Lower CircuitInductance and Reduced Switch Node Ringing

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

Applications• Computing

• Communications

• General Purpose Point of Load

www.onsemi.com

PQFN8POWER CLIPCASE 483AR

GR

LSG

SW

SW

SW

V+

V+

HSG

PAD10 GND(LSS)

PAD9 V+(HSD)

GR

V+

LSG

SW

SW

SWV+

HSG

SW

1

See detailed ordering and shipping information on page 3 ofthis data sheet.

ORDERING INFORMATION

Pin Name Description

PIN ASSIGNMENT

1 HSG High Side Gate

2 GR Gate Return

3,4,9 V+(HSD) High Side Drain

5,6,7 SW Switching Node, Low Side Drain

8 LSG Low Side Gate

10 GND(LSS) Low Side Source

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FDMS001N025DSD

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Table 1. MAXIMUM RATINGS TA = 25°C unless otherwise noted

Symbol Parameter Q1 Q2 Units

VDS Drain to Source Voltage 25 (Note 1) 25 V

VGS Gate to Source Voltage +16/−12V +16/−12V V

ID Drain Current −Continuous TC = 25°C (Note 2) 69 165 A

−Continuous TC = 100°C (Note 2) 43 104

−Continuous TA = 25°C 19 (Note 7a) 38 (Note 7b)

−Pulsed TA = 25°C (Note 3) 381 1240

EAS Single Pulse Avalanche Energy (Note 4) 121 337 mJ

PD Power Dissipation for Single Operation TC = 25°C 26 42 W

Power Dissipation for Single Operation TA = 25°C 2.1 (Note 7a) 2.3 (Note 7b)

TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.1. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be

applied.2. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &

electro−mechanical application board design.3. Pulsed Id please refer to Figure 11 and Figure 24 SOA graphs for more details.4. Q1: EAS of 121 mJ is based on starting TJ = 25°C; N−ch: L = 3 mH, IAS = 9 A, VDD = 25 V. 100% tested at L = 0.1 mH, IAS = 29 A.

Q2: EAS of 337 mJ is based on starting TJ = 25°C; N−ch: L = 3 mH, IAS = 15 A, VDD = 25 V. 100% tested at L = 0.1 mH, IAS = 48 A.

Table 2. THERMAL CHARACTERISTICS

Symbol Parameter Q1 Q2 Units

R�JC Thermal Resistance, Junction to Case 4.9 3.0 °C/W

R�JA Thermal Resistance, Junction to Ambient 60 (Note 7a) 55 (Note 7b)

R�JA Thermal Resistance, Junction to Ambient 130 (Note 7c) 120 (Note 7d)

Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 VID = 1 mA, VGS = 0 V

Q1Q2

2525

V

�BVDSS/�TJ

Breakdown Voltage Temperature Coefficient

ID = 10 mA, referenced to 25°CID = 10 mA, referenced to 25°C

Q1Q2

1528

mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 VVDS = 20 V, VGS = 0 V

Q1Q2

1500

�A�A

IGSS Gate to Source Leakage Current VGS = +16 V/−12 V, VDS = 0 VVGS = +16 V/−12 V, VDS = 0 V

Q1Q2

±100±100

nAnA

ON CHARACTERISTICS

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 320 �AVGS = VDS, ID = 1 mA

Q1Q2

0.81.0

1.31.5

2.53.0

V

�VGS(th)/�TJ

Gate to Source Threshold VoltageTemperature Coefficient

ID = 1 mA, referenced to 25°CID = 10 mA, referenced to 25°C

Q1Q2

−4−3

mV/°C

rDS(on) Drain to Source On Resistance VGS = 10 V, ID = 19 AVGS = 4.5 V, ID = 17 AVGS = 10 V, ID = 19 A,TJ =125°C

Q1 2.53.03.5

3.254.05.0

m�

VGS = 10 V, ID = 38 AVGS = 4.5 V, ID = 34 AVGS = 10 V, ID = 38 A,TJ = 125°C

Q2 0.700.920.96

0.921.201.38


FDMS001N025DSD

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Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted

Symbol UnitsMaxTypMinTypeTest ConditionsParameter

ON CHARACTERISTICS

gFS Forward Transconductance VDS = 5 V, ID = 19 AVDS = 5 V, ID = 38 A

Q1Q2

98262

S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance Q1:VDS = 13 V, VGS = 0 V, f = 1 MHZ

Q2:VDS = 13 V, VGS = 0 V, f = 1 MHZ

Q1Q2

13705105

pF

Coss Output Capacitance Q1Q2

6251810

pF

Crss Reverse Transfer Capacitance Q1Q2

44173

pF

Rg Gate Resistance Q1Q2

0.10.1

0.40.3

1.21.0

�

SWITCHING CHARACTERISTICS

td(on) Turn−On Delay Time Q1:VDD = 13 V, ID = 19 A, RGEN = 6 �

Q2:VDD = 13 V, ID = 38 A, RGEN = 6 �

Q1Q2

815

1626

ns

tr Rise Time Q1Q2

25

1010

ns

td(off) Turn−Off Delay Time Q1Q2

2239

3462

ns

tf Fall Time Q1Q2

24

1010

ns

Qg Total Gate Charge VGS = 0 V to10 V

Q1VDD = 13 V, ID = 19 A

Q2VDD = 13 V, ID = 38 A

Q1Q2

2175

30104

nC

Qg Total Gate Charge VGS = 0 V to4.5 V

Q1Q2

9.735

1449

nC

Qgs Gate to Source Gate Charge Q1Q2

2.912

nC

Qgd Gate to Drain “Miller” Charge Q1Q2

2.07.9

nC

DRAIN−SOURCE DIODE CHARACTERISTICS

VSD Source to Drain Diode Forward Volt-age

VGS = 0 V, IS = 19 A (Note 6)VGS = 0 V, IS = 38 A (Note 6)

Q1Q2

0.80.8

1.21.2

V

IS Diode continuous forward current TC = 25°C (Note 2) Q1Q2

69125

A

IS,Pulse Diode pulse current TC = 25°C (Note 3) Q1Q2

3811240

A

trr Reverse Recovery Time Q1IF = 19 A, di/dt = 100 A/�sQ2IF = 38 A, di/dt = 300 A/�s

Q1Q2

2739

4462

ns

Qrr Reverse Recovery Charge Q1Q2

1255

2187

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.5. R�JA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R�CA is determined

by the user’s board design.6. Pulse Test: Pulse Width < 300 �s, Duty cycle < 2.0%.

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Reel Size Tape Width Quantity

FDMS001N025DSD FDMS001N025DSD Power Clip 56 13” 12 mm 3000 units


FDMS001N025DSD

www.onsemi.com4

G DF

DS

SF

SS

G DF

DS

SF

SS

G DF

DS

SF

SS

G DF

DS

SF

SS

(Note 7a) (Note 7b)

(Note 7c) (Note 7d)

7. a) 60°C/W when mounted on a 1 in2 pad of 2 oz copperb) 55°C/W when mounted on a 1 in2 pad of 2 oz copperc) 130°C/W when mounted on a minimum pad of 2 oz copperd) 120°C/W when mounted on a minimum pad of 2 oz copper


FDMS001N025DSD

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TYPICAL CHARACTERISTICS (Q1 N−Channel) TJ = 25°C unless otherwise noted

Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance vs. DrainCurrent and Gate Voltage

Figure 3. Normalized On Resistance vs.Junction Temperature

Figure 4. On−Resistance vs. Gate to SourceVoltage

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode ForwardVoltage vs. Source Current

0.0 0.5 1.0 1.5 2.00

15

30

45

60

75

90

VGS = 3 V VGS = 2.5 V

VGS = 10 V

VGS = 3.5 V

PULSE DURATION = 80 �sDUTY CYCLE = 0.5% MAX

VGS = 4.5 V

I D, D

RA

IN C

UR

RE

NT

(A

)

VDS, DRAIN TO SOURCE VOLTAGE (V)0 15 30 45 60 75 90

0

1

2

3

4

5

6

VGS = 3 V

VGS = 2.5 V

VGS = 4.5 V


NO

RM

AL

IZE

DD

RA

IN T

O S

OU

RC

E O

N−R

ES

IST

AN

CE

ID, DRAIN CURRENT (A)

VGS = 10 VVGS = 3.5 V

−75 −50 −25 0 25 50 75 100 125 1500.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7ID = 19 AVGS = 10 V

NO

RM

AL

IZE

D D

RA

IN T

O S

OU

RC

E O

N−R

ES

IST

AN

CE

TJ, JUNCTION TEMPERATURE (oC)1 2 3 4 5 6 7 8 9 10

0

5

10

15

20

TJ = 125 oC

ID = 19 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

r DS

(on

),D

RA

IN T

O

SO

UR

CE

ON

−RE

SIS

TA

NC

E(m

�) PULSE DURATION = 80 �s

DUTY CYCLE = 0.5% MAX

0 1 2 3 40

15

30

45

60

75

90

TJ = 150 oC

VDS = 5 V

PULSE DURATION = 80�sDUTY CYCLE = 0.5% MAX

TJ = −55oC

TJ = 25 oC

I D, D

RA

IN C

UR

RE

NT

(A

)


0.0 0.2 0.4 0.6 0.8 1.0 10.001

0.01

0.1

1

10

100

TJ = −55oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

I S, R

EV

ER

SE

DR

AIN

CU

RR

EN

T (

A)

VSD, BODY DIODE FORWARD VOLTAGE (V)


FDMS001N025DSD

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Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to SourceVoltage

Figure 9. Unclamped Inductive SwitchingCapability

Figure 10. Maximum Continuous DrainCurrent vs. Case Temperature

Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum PowerDissipation

0 5 10 15 20 250

2

4

6

8

10

ID = 19 A

VDD = 15 V

VDD = 13 V

VG

S, G

AT

E T

O S

OU

RC

E V

OL

TA

GE

(V

)

Qg, GATE CHARGE (nC)

VDD = 10 V

0.1 1 10 251

10

100

1000

10000

f = 1 MHz

VGS = 0 V

CA

PA

CIT

AN

CE

(p

F)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

0.001 0.01 0.1 1 10 1001

10

100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I AS, A

VA

LA

NC

HE

CU

RR

EN

T (

A)

25 50 75 100 125 1500

20

40

60

80

VGS = 4.5 V

R�JC = 4.9 oC/W

VGS = 10 V

I D,D

RA

IN C

UR

RE

NT

(A

)

TC, CASE TEMPERATURE (oC)

0.1 1 10 1000.1

1

10

100

500

CURVE BENT TO

MEASURED DATA

10 �s

100 ms

10 ms

1 ms

100 �s

I D, D

RA

IN C

UR

RE

NT

(A

)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA ISLIMITED BY r DS(on)

SINGLE PULSE

TJ = MAX RATED

R�JC = 4.9 oC/W

TC = 25oC

10−5 10−4 10−3 10−2 10−1 110

100

1000

10000SINGLE PULSE

R�JA = 4.9oC/W

TA = 25oC

P( P

K),

PE

AK

TR

AN

SIE

NT

PO

WE

R (

W)

t, PULSE WIDTH (sec)


FDMS001N025DSD

www.onsemi.com7


Figure 13. Junction−to−Case Transient Thermal Response Curve

10−5 10−4 10−3 10−2 10−1 10.001

0.01

0.1

1

2

SINGLE PULSE

DUTY CYCLE−DESCENDING ORDERr(

t), N

OR

MA

LIZ

ED

EF

FE

CT

IVE

TR

AN

SIE

NT

TH

ER

MA

L R

ES

IST

AN

CE

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES:

Z�JC(t) = r(t) x R�JC

R�JC = 4.9 oC/W

Duty Cycle, D = t1 / t2Peak T J = PDM x Z�JC(t) + TC

PDM

t1t2


FDMS001N025DSD

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Figure 14. On Region Characteristics Figure 15. Normalized On−Resistance vs.Drain Current and Gate Voltage

Figure 16. Normalized On Resistance vs.Junction Temperature

Figure 17. On−Resistance vs. Gate to SourceVoltage

Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode ForwardVoltage vs. Source Current

0.0 0.1 0.2 0.30

15

30

45

60

75

90

VGS = 3 V

VGS = 2.5 V

VGS = 10 V

VGS = 3.5 V


VGS = 4.5 V

I D, D

RA

IN C

UR

RE

NT

(A

)


0 15 30 45 60 75 900

3

6

9

12

15

VGS = 3 V

VGS = 2.5 V

VGS = 4.5 V


NO

RM

AL

IZE

DD

RA

IN T

O S

OU

RC

E O

N−R

ES

IST

AN

CE


VGS = 10 VVGS = 3.5 V

0 15 30 45 60 75 900

3

6

9

12

15

VGS = 3 V

VGS = 2.5 V

VGS = 4.5 V


NO

RM

AL

IZE

DD

RA

IN T

O S

OU

RC

E O

N−R

ES

IST

AN

CE


VGS = 10 VVGS = 3.5 V

0 1 2 3 40

15

30

45

60

75

90

TJ = 125 oC

VDS = 5 V


TJ = −55 oC

TJ = 25 oC

I D, D

RA

IN C

UR

RE

NT

(A

)


0.0 0.2 0.4 0.6 0.8 1.00.001

0.01

0.1

1

10

90

TJ = −55 oC

TJ = 25 oC

TJ = 125 oC

VGS = 0 V

I S, R

EV

ER

SE

DR

AIN

CU

RR

EN

T (

A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

−75 −50 −25 0 25 50 75 100 125 1500.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7ID = 38 A

VGS = 10 V

NO

RM

AL

IZE

D D

RA

IN T

O S

OU

RC

E O

N−R

ES

IST

AN

CE

TJ, JUNCTION TEMPERATURE (oC)

1 2 3 4 5 6 7 8 9 100

1

2

3

4

5

6

TJ = 125 oC

ID = 38 A

TJ = 25 oC


r DS

(on

),D

RA

IN T

O

SO

UR

CE

ON

−RE

SIS

TA

NC

E (m�

)



FDMS001N025DSD

www.onsemi.com9


Figure 20. Gate Charge Characteristics Figure 21. Capacitance vs. Drain to SourceVoltage

Figure 22. Unclamped Inductive SwitchingCapability

Figure 23. Maximum Continuous DrainCurrent vs. Case Temperature

Figure 24. Forward Bias Safe Operating Area Figure 25. Single Pulse Maximum PowerDissipation

0 16 32 48 64 800

2

4

6

8

10

ID = 38 A

VDD = 15 V

VDD = 13 V

VG

S, G

AT

E T

O S

OU

RC

E V

OL

TA

GE

(V

)

Qg, GATE CHARGE (nC)

VDD = 10 V

0.1 1 10 2510

100

1000

10000

f = 1 MHz

VGS = 0 V

CA

PA

CIT

AN

CE

(p

F)


Crss

Coss

Ciss

0.001 0.01 0.1 1 10 100 10001

10

100

TJ = 125 oC

TJ = 25 oC

TJ = 100 oC

tAV, TIME IN AVALANCHE (ms)

I AS, A

VA

LA

NC

HE

CU

RR

EN

T (

A)

25 50 75 100 125 1500

40

80

120

160

200

VGS = 4.5 V

R�JC = 3.0 oC/W

VGS = 10 VI D

,DR

AIN

CU

RR

EN

T (

A)

TC, CASE TEMPERATURE (oC)

0.1 1 10 1000.1

1

10

100

10002000

CURVE BENT TO

MEASURED DATA

10 �s

100 ms10 ms

1 ms

100 �s

I D, D

RA

IN C

UR

RE

NT

(A

)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

R �JC = 3.0oC/W

TC = 25oC

10−5 10−4 10−3 10−2 10−1 110

100

1000

10000

100000SINGLE PULSE

R�JC = 3.0oC/W

TC = 25oC

P( P

K),

PE

AK

TR

AN

SIE

NT

PO

WE

R (

W)

t, PULSE WIDTH (sec)


FDMS001N025DSD

www.onsemi.com10


Figure 26. Junction−to−Case Transient Thermal Response Curve

10−5 10−4 10−3 10−2 10−1 10.001

0.01

0.1

1

2

SINGLE PULSE

DUTY CYCLE−DESCENDING ORDERr(

t), N

OR

MA

LIZ

ED

EF

FE

CT

IVE

TR

AN

SIE

NT

TH

ER

MA

L R

ES

IST

AN

CE

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01NOTES:

Z�JC(t) = r(t) x R�JC

R�JC = 3.0 oC/W

Duty Cycle, D = t1 / t2

Peak T J = PDM x Z�JC(t) + TC

PDM

t1t2


FDMS001N025DSD

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TYPICAL CHARACTERISTICS (continued)

ON Semiconductor’s SyncFET process embeds aSchottky diode in parallel with PowerTrench MOSFET.This diode exhibits similar characteristics to a discreteexternal Schottky diode in parallel with a MOSFET.Figure 27 shows the reverses recovery characteristic of theFDMS001N025DSD.

Schottky barrier diodes exhibit significant leakage at hightemperature and high reverse voltage. This will increase thepower in the device.

0 5 10 15 20 2510−6

10−5

10−4

10−3

10−2

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

I DS

S, R

EV

ER

SE

LE

AK

AG

E C

UR

RE

NT

(A

)

VDS, REVERSE VOLTAGE (V)100 150 200 250 300 350 400

−5

0

5

10

15

20

25

30

35

40

45

didt = 239 A/�s

CU

RR

EN

T (

A)

TIME (ns)

Figure 27. FDMS001N025DSD SyncFET BodyDiode Reverse Recovery Characteristic

Figure 28. SyncFET Body Diode Reverse Leakagevs. Drain−Source Voltage

PowerTrench is a registered trademark of Semiconductor Components Industries, LLC.


PQFN8 5x6, 1.27PCASE 483AR

ISSUE ADATE 21 MAY 2021

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others.

98AON13666GDOCUMENT NUMBER:

DESCRIPTION:

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FDMS001N025DSD - PowerTrench Power Clip